In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 1...In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 60876061)the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute,China (GrantNo. 20090C1403)
文摘In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at Ic = 28.6 mA （Jc = 183.4 A/cm2）, and it increases with the collector current density increasing. The specific on-state resistance （Rsp-on） is 32.3 mΩ.cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N＋ emitter layer sheet resistance are 1.7× 10-3 Ω.cm2 and 150 Ω/□, respectively.
