To investigate the effects of coxsackievirus B 3(CVB 3) on ion channel currents in rat ventricular myocytes. Methods.Rat hearts were isolated with collagenase to acquire single ventricular myocytes, L type voltage dep...To investigate the effects of coxsackievirus B 3(CVB 3) on ion channel currents in rat ventricular myocytes. Methods.Rat hearts were isolated with collagenase to acquire single ventricular myocytes, L type voltage dependent calcium channel(VDCC)current (I Ca ),Na + current (I Na ), outward potassium current (I out ), inwardly rectifying potassium current(I KI ) were recorded using whole cell patch clamp techniques. ResultsCVB 3 infection increased I Ca and I out , while decreased I KI ; but it had no obvious effect on I Na . Conclusion.The effects of CVB 3 on I Ca 、 I out 、 I KI may be one of the mechanisms of myocytes damage and the occurrence of abnormal electroactivities induced by CVB 3 infection.展开更多
We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by...We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition （MOCVD）. The 2μm channel-length devices exhibit a peak extrinsic transeonductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C-V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5 × 10^3 up to approximately 4.32 × 10^4 by controlling the etch thickness of In0.49Ga0.51P, The high drain current and high Ion/Ioff ratio of the In0.23Ga0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.展开更多
In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the move...In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips.展开更多
The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.展开更多
绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了...绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。展开更多
为研究渠道水生植被特征对渠内水力特性影响,设计了渠道模型试验,探讨了植被生长间距、入渠流量等因素影响下渠道水位、流速变化。试验表明,入渠流量对渠内断面水位变化特征影响较小,但植被生长间距特征会改变渠内断面水位变化,在间距为...为研究渠道水生植被特征对渠内水力特性影响,设计了渠道模型试验,探讨了植被生长间距、入渠流量等因素影响下渠道水位、流速变化。试验表明,入渠流量对渠内断面水位变化特征影响较小,但植被生长间距特征会改变渠内断面水位变化,在间距为10~15、20~30、35~40 mm 3个区段具有不同的水位变化趋势。入渠流量愈大,则水位愈高;但植被生长间距愈大,则渠内水位愈低。当植被生长间距不超过25 mm时,渠内流速变化具有增、降阶段,而在间距为30~40 mm时流速较稳定。植被生长间距愈大,则流速愈高。研究认为渠内水生植被应控制其分布密度与间距,以降低水生植被对渠内动水势能的影响。展开更多
文摘To investigate the effects of coxsackievirus B 3(CVB 3) on ion channel currents in rat ventricular myocytes. Methods.Rat hearts were isolated with collagenase to acquire single ventricular myocytes, L type voltage dependent calcium channel(VDCC)current (I Ca ),Na + current (I Na ), outward potassium current (I out ), inwardly rectifying potassium current(I KI ) were recorded using whole cell patch clamp techniques. ResultsCVB 3 infection increased I Ca and I out , while decreased I KI ; but it had no obvious effect on I Na . Conclusion.The effects of CVB 3 on I Ca 、 I out 、 I KI may be one of the mechanisms of myocytes damage and the occurrence of abnormal electroactivities induced by CVB 3 infection.
文摘We demonstrate high-performance In0.23 Ga0.77 As channel metal-oxide-semiconductor field-effect transistors （ MOS- FETs） with high on-current to off-current （Ion/Ioff） ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition （MOCVD）. The 2μm channel-length devices exhibit a peak extrinsic transeonductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C-V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5 × 10^3 up to approximately 4.32 × 10^4 by controlling the etch thickness of In0.49Ga0.51P, The high drain current and high Ion/Ioff ratio of the In0.23Ga0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.
基金supported by the National Natural Science Foundation of China(Grant Nos.61378083 and 11672229)the International Cooperation Foundation of the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011DFA12220)+2 种基金the Major Research Plan of the National Natural Science Foundation of China(Grant No.91123030)the Natural Science Foundation of Shaanxi Province of China(Grant Nos.2010JS110,14JS106,14JS107,and 2013SZS03-Z01)the Natural Science Basic Research Program of Shaanxi Province-Major Basic Research Project(Grant No.2016ZDJC-15)
文摘In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips.
基金Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021+1 种基金the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092the Qing Lan Project
文摘The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with decreasing Lch,eff, the saturation drain current （Iasat ） degradation is unexpectedly alleviated. The further study demonstrates that the anomalous Lch,eff dependence of Idsat degradation is induced by the increasing influence of the substrate current degradation on the lazar degradation with Lch,eff reducing.
文摘绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。
文摘为研究渠道水生植被特征对渠内水力特性影响,设计了渠道模型试验,探讨了植被生长间距、入渠流量等因素影响下渠道水位、流速变化。试验表明,入渠流量对渠内断面水位变化特征影响较小,但植被生长间距特征会改变渠内断面水位变化,在间距为10~15、20~30、35~40 mm 3个区段具有不同的水位变化趋势。入渠流量愈大,则水位愈高;但植被生长间距愈大,则渠内水位愈低。当植被生长间距不超过25 mm时,渠内流速变化具有增、降阶段,而在间距为30~40 mm时流速较稳定。植被生长间距愈大,则流速愈高。研究认为渠内水生植被应控制其分布密度与间距,以降低水生植被对渠内动水势能的影响。
