Ceramic dielectric materials with high dielectric strength and mechanisms of their internal factors affecting dielectric strength are significantly valuable for industrial application,especially for selection of suita...Ceramic dielectric materials with high dielectric strength and mechanisms of their internal factors affecting dielectric strength are significantly valuable for industrial application,especially for selection of suitable dielectric materials for high-power microwave transmission devices and reliable power transmission.Pure magnesium oxide(MgO),a kind of ceramic dielectric material,possesses great application potential in high-power microwave transmission devices due to its high theoretical dielectric strength,low dielectric constant,and low dielectric loss properties,but its application is limited by high sintering temperature during preparation.This work presented the preparation of a new type of multiphase ceramics based on MgO,which was MgO-1%ZrO_(2)-1%CaCO_(3-x)%MnCO_(3)(MZCM_(x),x=0,0.25,0.50,1.00,1.50,in molar),and their phase structures,morphological features,and dielectric properties were investigated.It was found that inclusion of ZrO_(2) and CaCO_(3) effectively inhibited excessive growth of MgO grains by formation of second phase,while addition of MnCO_(3) promoted the grain boundary diffusion process during the sintering process and reduced activation energy for the grain growth,resulting in a lower ceramic sintering temperature.Excellent performance,including high dielectric strength(Eb=92.3 kV/mm)and quality factor(Q×f=216642 GHz),simultaneously accompanying low dielectric loss(<0.03%),low temperature coefficient of dielectric constant(20.3×10^(–6)℃^(–1),85℃)and resonance frequency(–12.54×10^(–6)℃^(–1)),was achieved in MZCM1.00 ceramics under a relatively low sintering temperature of 1350℃.This work offers an effective solution for selecting dielectric materials for high-power microwave transmission devices.展开更多
The feldspar-based microwave dielectric ceramic with low relative permittivity(εr)and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology.In this wor...The feldspar-based microwave dielectric ceramic with low relative permittivity(εr)and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology.In this work,a series of microwave dielectric ceramic SrAl_(2-x)Ga_(x)Si_(2)O_(8)(0.1≤x≤2.0)was synthesized using the traditional solid-state method.X-ray diffraction pattern indicates that Ga^(3+)can be dissolved into Al^(3+),forming a solid solution.Meanwhile,substitution of Ga^(3+)for Al^(3+)can promote the space group transition from I2/c(0.1≤x≤1.4)to P21/a(1.6≤x≤2.0)with coefficient of thermal expansion(CTE)increasing from 2.9×10^(-6)℃^(-1) to 5.2×10^(-6)℃^(-1).During this substitution,the phase transition can significantly improve the structural symmetry to enhance the dielectric properties and mechanical properties.Rietveld refinement results indicate that Ga^(3+)averagely occupied four Al^(3+)compositions to form solid solution.All ceramics have a dense microstructure and high relative density above 95%.An ultralower of 5.8 was obtained at x=1.6 composition with high quality factor(Q´f)of 50700 GHz and negative temperature coefficients of resonant frequency(tf)of approximately−35×10^(-6)℃^(-1).The densification temperature can be reduced to 940℃by adding 4%(in mass)LiF,resulting in good chemical compatibility with Ag electrode.Meanwhile,negativetf can be tuned to near-zero(+3.7×10^(-6)℃^(-1))by adding CaTiO_(3) ceramic.展开更多
ZnAl_(2)O_(4) and ZnAl_(2)O_(4)-based ceramics have attracted much attention from researchers due to their good microwave dielectric,thermal and mechanical properties.In this work,the influence of 5%(in mass)CuO-TiO_(...ZnAl_(2)O_(4) and ZnAl_(2)O_(4)-based ceramics have attracted much attention from researchers due to their good microwave dielectric,thermal and mechanical properties.In this work,the influence of 5%(in mass)CuO-TiO_(2)-Nb_(2)O_(5)(CTN)ternary composite oxide additives with different composition ratios on sintering behavior and properties of ZnAl_(2)O_(4) microwave dielectric ceramics was investigated.When the molar fraction ranges of Cu,Ti and Nb elements in 5%CTN additives are 0.625-0.875,0-0.250 and 0.125-0.625,respectively,sintering temperature of ZnAl_(2)O_(4) ceramics can be reduced from above 1400℃to below 1000℃.The sintering additives CN(Cu:Nb=1:1,molar ratio)and CTN(Cu:Ti:Nb=4:1:3,molar ratio)can reduce sintering temperature of ZnAl_(2)O_(4) ceramics to 975 and 1000℃,respectively,while maintaining good dielectric properties(dielectric constantε_(r)=11.36,quality factor Q׃=8245 GHz andε_(r)=9.52,Q׃=22249 GHz)and flexural strengths(200 and 161 MPa),which are expected to be applied in preparation of low temperature co-fired ceramic(LTCC)materials with copper electrodes.Low-temperature sintering of the ZnAl_(2)O_(4)+CTN system is characterized as activated sintering.Nanometer-level amorphous interfacial films containing Cu,Ti,and Nb elements are observed at the grain boundaries,which may provide fast diffusion pathways for mass transportation during the sintering process.Valence changes of Ti and Cu ions,along with changes of oxygen vacancies,are confirmed,which provides a potential mechanism for reduced sintering temperature of ZnAl_(2)O_(4) ceramics.In addition,a series of reactions occurring at the grain boundaries can activate these boundaries and further promote the sintering densification process.These results suggest a promising way to design a novel LTCC material with excellent properties based on the low temperature sintering of ceramics with the sintering aid of CuO-TiO_(2)-Nb_(2)O_(5) composite oxide.展开更多
The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-...The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-doped TiO2-based varistor ceramics were fabricated by sintering at 1 250 ℃ for 0.5-5.0 h. The samples were characterized by X-ray diffraction, voltage-current characteristics, energy spectra, metallographs, breakdown voltages, and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cma decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm, the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42, and the apparent dielectric constant increases from 98 200 to 1l5 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0-3.0 h considering both nonlinear electrical behavior and dielectric properties.展开更多
The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and mi...The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu（B2O5） addition can effectively reduce the sintering temperature to 900℃, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of er24.5, Q×f =24 622 GHz, rf=4.2×10-6℃ -1 are obtained for 1.0% BCB-doped Li2MgTi3O8 ceramics sintered at 900℃ for 3 h. The BCB-doped Li2MgTi3O8 ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.展开更多
The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential ther...The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.展开更多
CaO-B203-SiO2 （CBS） glass powders are prepared by conventional glass melting method at different melting temperatures whose properties and microstructures are characterized by X-ray diffraction （XRD） and scanning ...CaO-B203-SiO2 （CBS） glass powders are prepared by conventional glass melting method at different melting temperatures whose properties and microstructures are characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. It is found that there are SiO2 and some unknown phases in CBS glass melting liquid from 1 300 ℃ to 1 500 ℃ and the amount of these phases decreases with the increase of the melting temperature. The CBS glass melted at 1 450 ℃ could be sintered from 830 ℃ to 930 ℃ and the bulk densities of the samples are all higher than 2.4 g/cm^3. From the points of the properties and energy conservation, the melting temperature of 1 450 ℃ is the optimal melting temperature. The glass ceramic sintered at 850 ℃ exhibits better dielectric properties： er=6.33, tan6=2.2×10^-3 at 10 GHz, and the major phases of the samples are CaSiO3, CaB2O4 and SiO2.展开更多
The dielectric constant(DC)is one of the key properties for detection of threat materials such as Improvised Explosive Devices(IEDs).In the present paper,the density functional theory(DFT)as well as ab-initio approach...The dielectric constant(DC)is one of the key properties for detection of threat materials such as Improvised Explosive Devices(IEDs).In the present paper,the density functional theory(DFT)as well as ab-initio approaches are used to explore effective methods to predict dielectric constants of a series of 12 energetic materials(EMs)for which experimental data needed to experimentally determine the dielectric constant(refractive indices)are available.These include military grades energetic materials,nitro and peroxide compounds,and the widely used nitroglycerin.Ab-initio and DFT calculations are conducted.In order to calculate dielectric constant values of materials,potential DFT functional combined with basis sets are considered for testing.Accuracy of the calculations are compared to experimental data listed in the scientific literature,and time required for calculations are both evaluated and discussed.The best functional/basis set combinations among those tested are CAM-B3LYP and AUG-ccpVDZm,which provide great results,with accuracy deviations below 5%when calculated results are compared to experimental data.展开更多
The purpose of this paper is to reduce the error when measuring high dielectric constant materials.In this paper,the reason why the error introduced is analyzed firstly.Then,with HFSS,the method of choosing the size o...The purpose of this paper is to reduce the error when measuring high dielectric constant materials.In this paper,the reason why the error introduced is analyzed firstly.Then,with HFSS,the method of choosing the size of cavity and the dimension of dielectric materials is proposed.And several error correction curves are provided for measuring high dielectric constant materials.Finally,the experiment is conducted to validate the feasibility of our analysis.展开更多
Dielectric and ferroelectric properties of complex perovskite PZT-PZN ceramic system were investigated under the influence of the compressive stress.The results showed that the dielectric properties,i.e.dielectric con...Dielectric and ferroelectric properties of complex perovskite PZT-PZN ceramic system were investigated under the influence of the compressive stress.The results showed that the dielectric properties,i.e.dielectric constant(ε_r)and dielectric loss(tan δ),and the ferroelectric characteristics,i.e.the area of the ferroelectric hysteresis loops,the saturation polarization(P_ sat),and the remnant polarization(P_r)changed significantly with increasing compressive stress.These changes depended strongly on the ceramic compositions.The experimental results on the dielectric properties could be explained by both intrinsic and extrinsic domain-related mechanisms involving domain wall motions,as well as the de-aging phenomenon.The stress-induced domain wall motion suppression and non-180° ferroelectric domain switching processes were responsible for the changes observed in the ferroelectric parameters.In addition,a significant decrease in those parameters after a cycle of stress was observed and attributed to the stress induced decrease in switchable part of spontaneous polarization.This study clearly show that the applied stress had significant influence on the electrical properties of complex perovskite ceramics.展开更多
基金Student Training Program for Innovation and Entrepreneurship of Hangzhou Institute for Advanced Study,UCAS(CXCY20230305)Chinese Academy of Sciences Key Project(ZDRW-CN-2021-3-1-18)。
文摘Ceramic dielectric materials with high dielectric strength and mechanisms of their internal factors affecting dielectric strength are significantly valuable for industrial application,especially for selection of suitable dielectric materials for high-power microwave transmission devices and reliable power transmission.Pure magnesium oxide(MgO),a kind of ceramic dielectric material,possesses great application potential in high-power microwave transmission devices due to its high theoretical dielectric strength,low dielectric constant,and low dielectric loss properties,but its application is limited by high sintering temperature during preparation.This work presented the preparation of a new type of multiphase ceramics based on MgO,which was MgO-1%ZrO_(2)-1%CaCO_(3-x)%MnCO_(3)(MZCM_(x),x=0,0.25,0.50,1.00,1.50,in molar),and their phase structures,morphological features,and dielectric properties were investigated.It was found that inclusion of ZrO_(2) and CaCO_(3) effectively inhibited excessive growth of MgO grains by formation of second phase,while addition of MnCO_(3) promoted the grain boundary diffusion process during the sintering process and reduced activation energy for the grain growth,resulting in a lower ceramic sintering temperature.Excellent performance,including high dielectric strength(Eb=92.3 kV/mm)and quality factor(Q×f=216642 GHz),simultaneously accompanying low dielectric loss(<0.03%),low temperature coefficient of dielectric constant(20.3×10^(–6)℃^(–1),85℃)and resonance frequency(–12.54×10^(–6)℃^(–1)),was achieved in MZCM1.00 ceramics under a relatively low sintering temperature of 1350℃.This work offers an effective solution for selecting dielectric materials for high-power microwave transmission devices.
基金National Natural Science Foundation of China (52302140)Major Scientific and Technological Innovation Project of Wenzhou (ZG2023040, ZG2023042)Joint Funds of the National Natural Science Foundation of China Key Program (U21B2068)。
文摘The feldspar-based microwave dielectric ceramic with low relative permittivity(εr)and excellent mechanical properties has attracted much attention in the fifth-generation wireless communication technology.In this work,a series of microwave dielectric ceramic SrAl_(2-x)Ga_(x)Si_(2)O_(8)(0.1≤x≤2.0)was synthesized using the traditional solid-state method.X-ray diffraction pattern indicates that Ga^(3+)can be dissolved into Al^(3+),forming a solid solution.Meanwhile,substitution of Ga^(3+)for Al^(3+)can promote the space group transition from I2/c(0.1≤x≤1.4)to P21/a(1.6≤x≤2.0)with coefficient of thermal expansion(CTE)increasing from 2.9×10^(-6)℃^(-1) to 5.2×10^(-6)℃^(-1).During this substitution,the phase transition can significantly improve the structural symmetry to enhance the dielectric properties and mechanical properties.Rietveld refinement results indicate that Ga^(3+)averagely occupied four Al^(3+)compositions to form solid solution.All ceramics have a dense microstructure and high relative density above 95%.An ultralower of 5.8 was obtained at x=1.6 composition with high quality factor(Q´f)of 50700 GHz and negative temperature coefficients of resonant frequency(tf)of approximately−35×10^(-6)℃^(-1).The densification temperature can be reduced to 940℃by adding 4%(in mass)LiF,resulting in good chemical compatibility with Ag electrode.Meanwhile,negativetf can be tuned to near-zero(+3.7×10^(-6)℃^(-1))by adding CaTiO_(3) ceramic.
基金National Natural Science Foundation of China (U24A2052)Shanghai Eastern Talent Plan。
文摘ZnAl_(2)O_(4) and ZnAl_(2)O_(4)-based ceramics have attracted much attention from researchers due to their good microwave dielectric,thermal and mechanical properties.In this work,the influence of 5%(in mass)CuO-TiO_(2)-Nb_(2)O_(5)(CTN)ternary composite oxide additives with different composition ratios on sintering behavior and properties of ZnAl_(2)O_(4) microwave dielectric ceramics was investigated.When the molar fraction ranges of Cu,Ti and Nb elements in 5%CTN additives are 0.625-0.875,0-0.250 and 0.125-0.625,respectively,sintering temperature of ZnAl_(2)O_(4) ceramics can be reduced from above 1400℃to below 1000℃.The sintering additives CN(Cu:Nb=1:1,molar ratio)and CTN(Cu:Ti:Nb=4:1:3,molar ratio)can reduce sintering temperature of ZnAl_(2)O_(4) ceramics to 975 and 1000℃,respectively,while maintaining good dielectric properties(dielectric constantε_(r)=11.36,quality factor Q׃=8245 GHz andε_(r)=9.52,Q׃=22249 GHz)and flexural strengths(200 and 161 MPa),which are expected to be applied in preparation of low temperature co-fired ceramic(LTCC)materials with copper electrodes.Low-temperature sintering of the ZnAl_(2)O_(4)+CTN system is characterized as activated sintering.Nanometer-level amorphous interfacial films containing Cu,Ti,and Nb elements are observed at the grain boundaries,which may provide fast diffusion pathways for mass transportation during the sintering process.Valence changes of Ti and Cu ions,along with changes of oxygen vacancies,are confirmed,which provides a potential mechanism for reduced sintering temperature of ZnAl_(2)O_(4) ceramics.In addition,a series of reactions occurring at the grain boundaries can activate these boundaries and further promote the sintering densification process.These results suggest a promising way to design a novel LTCC material with excellent properties based on the low temperature sintering of ceramics with the sintering aid of CuO-TiO_(2)-Nb_(2)O_(5) composite oxide.
基金Project(50872001) supported by the National Natural Science Foundation of ChinaProjects(KJ2007B132, KJ2009A006Z) supported by the Scientific Research Foundation of Education Department of Anhui Province, ChinaProject(XJ200907) supported by the Foundation of Construction of Quality Project of Anhui University, China
文摘The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-doped TiO2-based varistor ceramics were fabricated by sintering at 1 250 ℃ for 0.5-5.0 h. The samples were characterized by X-ray diffraction, voltage-current characteristics, energy spectra, metallographs, breakdown voltages, and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cma decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm, the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42, and the apparent dielectric constant increases from 98 200 to 1l5 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0-3.0 h considering both nonlinear electrical behavior and dielectric properties.
基金Project(2010GXNSFA013029) supported by the Natural Science Foundation of Guangxi Province,ChinaProject(101059529) supported by National Undergraduate Innovation Program of the Ministry of Education of China
文摘The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu（B2O5） addition can effectively reduce the sintering temperature to 900℃, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of er24.5, Q×f =24 622 GHz, rf=4.2×10-6℃ -1 are obtained for 1.0% BCB-doped Li2MgTi3O8 ceramics sintered at 900℃ for 3 h. The BCB-doped Li2MgTi3O8 ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.
基金Project(2007AA03Z0455) supported by the National High Technology Research and Development Program of ChinaProject supported by the Priority Academic Program Development of Jiangsu Higher Education Institution, China
文摘The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.
基金Project(2007AA03Z0455) supported by the National High Technology Research and Development Program of ChinaProject(BE2010194) supported by Science&Technology Pillar Program of Jiangsu Province, China+1 种基金Project(KF201103) supported by the State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University, ChinaProject supported by the Priority Academic Development of Jiangsu Higher Education Institutions, China
文摘CaO-B203-SiO2 （CBS） glass powders are prepared by conventional glass melting method at different melting temperatures whose properties and microstructures are characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. It is found that there are SiO2 and some unknown phases in CBS glass melting liquid from 1 300 ℃ to 1 500 ℃ and the amount of these phases decreases with the increase of the melting temperature. The CBS glass melted at 1 450 ℃ could be sintered from 830 ℃ to 930 ℃ and the bulk densities of the samples are all higher than 2.4 g/cm^3. From the points of the properties and energy conservation, the melting temperature of 1 450 ℃ is the optimal melting temperature. The glass ceramic sintered at 850 ℃ exhibits better dielectric properties： er=6.33, tan6=2.2×10^-3 at 10 GHz, and the major phases of the samples are CaSiO3, CaB2O4 and SiO2.
文摘The dielectric constant(DC)is one of the key properties for detection of threat materials such as Improvised Explosive Devices(IEDs).In the present paper,the density functional theory(DFT)as well as ab-initio approaches are used to explore effective methods to predict dielectric constants of a series of 12 energetic materials(EMs)for which experimental data needed to experimentally determine the dielectric constant(refractive indices)are available.These include military grades energetic materials,nitro and peroxide compounds,and the widely used nitroglycerin.Ab-initio and DFT calculations are conducted.In order to calculate dielectric constant values of materials,potential DFT functional combined with basis sets are considered for testing.Accuracy of the calculations are compared to experimental data listed in the scientific literature,and time required for calculations are both evaluated and discussed.The best functional/basis set combinations among those tested are CAM-B3LYP and AUG-ccpVDZm,which provide great results,with accuracy deviations below 5%when calculated results are compared to experimental data.
文摘The purpose of this paper is to reduce the error when measuring high dielectric constant materials.In this paper,the reason why the error introduced is analyzed firstly.Then,with HFSS,the method of choosing the size of cavity and the dimension of dielectric materials is proposed.And several error correction curves are provided for measuring high dielectric constant materials.Finally,the experiment is conducted to validate the feasibility of our analysis.
文摘Dielectric and ferroelectric properties of complex perovskite PZT-PZN ceramic system were investigated under the influence of the compressive stress.The results showed that the dielectric properties,i.e.dielectric constant(ε_r)and dielectric loss(tan δ),and the ferroelectric characteristics,i.e.the area of the ferroelectric hysteresis loops,the saturation polarization(P_ sat),and the remnant polarization(P_r)changed significantly with increasing compressive stress.These changes depended strongly on the ceramic compositions.The experimental results on the dielectric properties could be explained by both intrinsic and extrinsic domain-related mechanisms involving domain wall motions,as well as the de-aging phenomenon.The stress-induced domain wall motion suppression and non-180° ferroelectric domain switching processes were responsible for the changes observed in the ferroelectric parameters.In addition,a significant decrease in those parameters after a cycle of stress was observed and attributed to the stress induced decrease in switchable part of spontaneous polarization.This study clearly show that the applied stress had significant influence on the electrical properties of complex perovskite ceramics.
