0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in 1993.The FETs have already commercialized as microwave power devices,but volume production has not yet realized.The main applicat...0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in 1993.The FETs have already commercialized as microwave power devices,but volume production has not yet realized.The main application field is mobile phone base stations.For such applications,GaAs power transistors and silicon LDMOS have already been used.Therefore,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low cost.However,the latter two items are normally difficult for devices using new materials.展开更多
文摘0 Introduction Fifteen years have passed since the first AlGaN/GaN HFET was reported in 1993.The FETs have already commercialized as microwave power devices,but volume production has not yet realized.The main application field is mobile phone base stations.For such applications,GaAs power transistors and silicon LDMOS have already been used.Therefore,advantages compared with these existing devices will be required,such as high efficiency,low distortion,low noise,high reliability and,especially,low cost.However,the latter two items are normally difficult for devices using new materials.
