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Preparation of TiO2 and SiC Films from Their Precursors Using Electrospraying
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作者 时方晓 《沈阳建筑大学学报(自然科学版)》 CAS 北大核心 2010年第6期1166-1171,共6页
Titanium dioxide(TiO2) films were prepared by cone - jet mode electrospraying a titanium ethoxideprecursor solution onto a silicon substrate.The effects of spraying time,substrate temperature and aging on thesurface m... Titanium dioxide(TiO2) films were prepared by cone - jet mode electrospraying a titanium ethoxideprecursor solution onto a silicon substrate.The effects of spraying time,substrate temperature and aging on thesurface morphology of the films prepared were studied.Thin films obtained after spraying for 600 s were aged atroom temperature to form a porous TiO2 network with pores in the size range of 100 - 500 nm.Thicker filmswere prepared by spraying for 3 000 s,but these cracked on drying although it can be concluded that films pre-pared using a higher substrate temperature were denser.By this method,SiC coating was also prepared on anAl2O3 substrate using polysilane as a precursor.The result implies the potential of an industrial production ofdye sensitized solar cells by electrospraying technique. 展开更多
关键词 ELECTROSPRAYING cone-jet mode porous tio2 films SiC coating surface morphology
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Fabrication of nanoporous TiO_2 films with novel surface morphology on conducting glass(FTO) substrate 被引量:1
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作者 周艺 黄燕 +4 位作者 李荡 何文红 郭长春 吕彩霞 张世英 《Journal of Central South University》 SCIE EI CAS 2012年第10期2740-2745,共6页
The crystalline structure and surface morphology of TiO2 semiconductor coating play an important role in the conversion efficiency of dye-sensitized solar cells. In order to obtain TiO2 coating with controllable morph... The crystalline structure and surface morphology of TiO2 semiconductor coating play an important role in the conversion efficiency of dye-sensitized solar cells. In order to obtain TiO2 coating with controllable morphology and high porosity, nanoporous TiO2 films were fabricated on conducting glass (FTO) substrates, Ti thin films (1.5-2 gin) were deposited on conducting glass (FTO) substrates via the DC sputtering method, and then electrochemically anodized in NH4F/ethylene glycol solution. The crystalline structure and surface morphology of the samples were characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM), respectively. The influences of anodizing potential, electrolyte composition, and pH value on the surface morphology of nanoporous TiO2 films were extensively studied. The growth mechanism of nanoporous TiO2 films was discussed by current density variations with anodizing time. The results demonstrate that nanoporous TiO2 films with high porosity and three-dimensional (3D) networks are observed at 30 V, when the NH4F concentration in ethylene glycol solution is 0.3% (mass fraction) and the electrolyte pH value is 5.0. 展开更多
关键词 nanoporous tio2 films anodizing potential electrolyte composition pH conducting glass growth mechanism
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PREPARATION OF TiO_2 THIN FILMS BY MOCVD METHOD 被引量:2
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作者 Tong Jun, Zhang Tong, Zhang Liang-ying, Yao Xi Electronic Materials Research Laboratory, Xi’an Jiaotong University. Xa’an, Shaanxi, 710049, China 《真空科学与技术学报》 EI CAS CSCD 1992年第Z1期215-218,共4页
Preparation of TiO<sub>2</sub> thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO<su... Preparation of TiO<sub>2</sub> thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO<sub>2</sub> films on Si wafers starting from metal-organic precursor tetrabutyl titanate. Activation energy of the film formation (E) is obtained to be 23.6 kJ/mol. Structure of films is pure anatase when deposit temperatures are low, rutile forms at 700℃. The films also exhibit preferred crystallographic orientations which strongly depend on deposit conditions. Refractive index increases with increasing of film thickness and decreasing of deposit temperature. 展开更多
关键词 MOCVD RATE PREPARATION OF tio2 THIN films BY MOCVD METHOD TIO
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