With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ...With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.展开更多
A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure opt...A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.展开更多
Gold is commonly associated with arsenic in As-rich pyrite or arsenopyrite in a variety types of gold deposit,such as sediment-hosted gold deposits,epithermal Au-Ag deposits,Au-rich VMS deposits,and mesothermal lode g...Gold is commonly associated with arsenic in As-rich pyrite or arsenopyrite in a variety types of gold deposit,such as sediment-hosted gold deposits,epithermal Au-Ag deposits,Au-rich VMS deposits,and mesothermal lode gold deposits(Ciobanu and Cook,2002;Pals et al.展开更多
The characteristics of previously determined and a number of new,unknown before,mineral phases are presented.On this area in sulphide ores of the Central the Pai-Khoi dolerite bodies.In the process of intrusion format...The characteristics of previously determined and a number of new,unknown before,mineral phases are presented.On this area in sulphide ores of the Central the Pai-Khoi dolerite bodies.In the process of intrusion formation and sulphidic magma crystallization the subtraction of such elements as lead, stibium,cobalt,arsenic,and accordingly migration and concentration of minerals of platinum展开更多
基金Project(51774341) supported by the National Natural Science Foundation of ChinaProject(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
文摘With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
基金Supported by the self-funded project of Kunming Institute of Physics。
文摘A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.
基金supported by the Natural Science Foundation of China(grants 9081400440821061)the 111 Project(B07039)
文摘Gold is commonly associated with arsenic in As-rich pyrite or arsenopyrite in a variety types of gold deposit,such as sediment-hosted gold deposits,epithermal Au-Ag deposits,Au-rich VMS deposits,and mesothermal lode gold deposits(Ciobanu and Cook,2002;Pals et al.
文摘The characteristics of previously determined and a number of new,unknown before,mineral phases are presented.On this area in sulphide ores of the Central the Pai-Khoi dolerite bodies.In the process of intrusion formation and sulphidic magma crystallization the subtraction of such elements as lead, stibium,cobalt,arsenic,and accordingly migration and concentration of minerals of platinum
