A broadband and ultra-thin absorber for solar cell application is designed. The absorber consists of three layers, and the difference is that the four split ring resonators made of metal gold are encrusted in the gall...A broadband and ultra-thin absorber for solar cell application is designed. The absorber consists of three layers, and the difference is that the four split ring resonators made of metal gold are encrusted in the gallium arsenide （GaAs） plane in the top layer. The simulated results show that a perfect absorption in the region from 481.2 to 684.0THz can be obtained for either transverse electric or magnetic polarization wave due to the coupling effect between the material of GaAs and gold. The metamaterial is ultra-thin, having the total thickness of 56nm, which is less than one-tenth resonance wavelength, and the absorption coefficients at the three resonance wavelengths are above 90%. Moreover, the effective medium theory, electric field and surface current distributions are adopted to explain the physical mechanism of the absorption, and the permittivity sensing applications are also discussed. As a result, the proposed structure can be used in many areas, such as solar cell, sensors, and integrated photodetectors.展开更多
We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities hav...We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 104cm2·V-1·s-1along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3 Sn I3can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61275174the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20100162110068
文摘A broadband and ultra-thin absorber for solar cell application is designed. The absorber consists of three layers, and the difference is that the four split ring resonators made of metal gold are encrusted in the gallium arsenide （GaAs） plane in the top layer. The simulated results show that a perfect absorption in the region from 481.2 to 684.0THz can be obtained for either transverse electric or magnetic polarization wave due to the coupling effect between the material of GaAs and gold. The metamaterial is ultra-thin, having the total thickness of 56nm, which is less than one-tenth resonance wavelength, and the absorption coefficients at the three resonance wavelengths are above 90%. Moreover, the effective medium theory, electric field and surface current distributions are adopted to explain the physical mechanism of the absorption, and the permittivity sensing applications are also discussed. As a result, the proposed structure can be used in many areas, such as solar cell, sensors, and integrated photodetectors.
基金supported by the National Natural Science Foundation of China(Grant No.51172067)the Hunan Provincial Natural Science Fund for Distinguished Young Scholars,China(Grant No.13JJ1013)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20130161110036)the New Century Excellent Talents in University,China(Grant No.NCET-12-0171.D)
文摘We calculate the electronic properties and carrier mobility of perovskite CH3NH3SnI3as a solar cell absorber by using the hybrid functional method. The calculated result shows that the electron and hole mobilities have anisotropies with a large magnitude of 1.4 × 104cm2·V-1·s-1along the y direction. In view of the huge difference between hole and electron mobilities, the perovskite CH3NH3 Sn I3can be considered as a p-type semiconductor. We also discover a relationship between the effective mass anisotropy and electronic occupation anisotropy. The above results can provide reliable guidance for its experimental applications in electronics and optoelectronics.
