Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the pr...Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the properties of the films obtained by using the two doping compounds was performed by using I-V characteristics in the dark at room temperature, AC measurements, and transmittance. It is found that the films prepared by using HF have smaller resistivity, lower impedance and they are less capacitive than films prepared by using NH4F. In addition, these films have higher transmittance, higher optical bandgap energy and narrower Urbach tail width. These results are interesting for the use of SnO2：F as forecontact in CdS/CdTe solar cells.展开更多
A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2...A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.展开更多
文摘Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the properties of the films obtained by using the two doping compounds was performed by using I-V characteristics in the dark at room temperature, AC measurements, and transmittance. It is found that the films prepared by using HF have smaller resistivity, lower impedance and they are less capacitive than films prepared by using NH4F. In addition, these films have higher transmittance, higher optical bandgap energy and narrower Urbach tail width. These results are interesting for the use of SnO2：F as forecontact in CdS/CdTe solar cells.
文摘A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.
