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Sn_(1-x)(In_(1-y)Cu_y)_xO薄膜的合成
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作者 郭玲玲 郑光裕 张治国 《物理实验》 2006年第9期12-16,共5页
利用真空反应蒸发技术,在氧分压约为8.5×10-2Pa、衬底温度为400℃条件下蒸发高纯度的铟、锡和铜,在玻璃衬底上制备出Sn1-x(In1-yCuy)xO薄膜.研究了蒸发源材料质量比不同的样品的薄膜结构、透过率、薄膜的方块电阻和电阻率与温度的... 利用真空反应蒸发技术,在氧分压约为8.5×10-2Pa、衬底温度为400℃条件下蒸发高纯度的铟、锡和铜,在玻璃衬底上制备出Sn1-x(In1-yCuy)xO薄膜.研究了蒸发源材料质量比不同的样品的薄膜结构、透过率、薄膜的方块电阻和电阻率与温度的关系.实验结果表明,Sn1-x(In1-yCuy)xO透明导电薄膜具有优良的光电特性,而且制备出的Sn1-x(In1-yCuy)xO薄膜中In的含量大大减少,可以成为ITO薄膜的潜在替代材料. 展开更多
关键词 sn1-x(In1-yCuy)xO薄膜 反应蒸发法 XRD衍射图 温度特性 透过率
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First-principles study of the(Cu_xNi_(1-x))_3 Sn precipitations with different structures in Cu–Ni–Sn alloys 被引量:2
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作者 Guang-Wei Peng Xue-Ping Gan +2 位作者 Zhou Li Ke-Chao Zhou Stalte Key Laborattory of Powder Metallurgy Centra 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期423-433,共11页
The structural parameters, the formation energies, and the elastic and thermodynamic properties of the (CuxNi1-x)3Sn phase with different structures are studied by the virtual crystal approximation (VCA) and super... The structural parameters, the formation energies, and the elastic and thermodynamic properties of the (CuxNi1-x)3Sn phase with different structures are studied by the virtual crystal approximation (VCA) and super-cell (SC) methods. The lattice constants, formation energies, and elastic constants obtained by SC and VCA are generally consistent with each other. It can be inferred that ttle VCA method is suitable for (CuxNil ,)3Sn ordered phase calculation. The calculated results show that the equilibrium structures of Cu3Sn and Ni3Sn are D0a and D019 respectively. (CuxNi1-x)3Sn D03 with various components are the mctastable phase at temperature of 0 K, just as D022 and L I2. With the temperature increase, tile free energy of the D03 is lower than those of D022 and L12, and D022 and L12 eventually turn into D03 in tile aging process. The (CuxNi1-x)3Sn D022 is first precipitated in a solid solution because its structure and cell volume are most similar to Ihose of a solid solution matrix. The LI2 and the D022 possess better mechanical stability than the D03. Also, they may play a more important role in the strengthening of Cu-Ni-Sn alloys. This study is valuable lk)r further research on Cu-Ni-Sn alloys. 展开更多
关键词 (CuxNi1-x)3sn first-principle virtual crystal approximation super-cell
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Tunable Weyl fermions and Fermi arcs in magnetized topological crystalline insulators 被引量:1
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作者 Junwei Liu Chen Fang Liang Fu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第4期41-46,共6页
Based on k · p analysis and realistic tight-binding calculations, we find that time-reversal-breaking Weyl semimetals can be realized in magnetically-doped(Mn, Eu, Cr, etc.) Sn_(1-x)Pb_x(Te, Se) class of topologi... Based on k · p analysis and realistic tight-binding calculations, we find that time-reversal-breaking Weyl semimetals can be realized in magnetically-doped(Mn, Eu, Cr, etc.) Sn_(1-x)Pb_x(Te, Se) class of topological crystalline insulators. All the Weyl points are well separated in momentum space and possess nearly the same energy due to high crystalline symmetry.Moreover, both the Weyl points and Fermi arcs are highly tunable by varying Pb/Sn composition, pressure, magnetization,temperature, surface potential, etc., opening up the possibility of manipulating Weyl points and rewiring the Fermi arcs. 展开更多
关键词 TOPOLOGICAL crystalline insulator magnetic WEYL SEMIMETAL magnetically-doped sn1-x Pbx(Te Se) FERMI arc
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低频窄带压电陶瓷滤波器材料的研究 被引量:1
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作者 蹇胜勇 杨莉 +1 位作者 刘光聪 刘相果 《压电与声光》 CSCD 北大核心 2008年第2期199-201,共3页
采用传统的压电陶瓷制备方法,研究锆钛比(r(Zr/Ti)、掺杂、烧成工艺对低频窄带Pb(Zn1/3Nb2/3)x(Sn1/3Nb2/3)yTiAZrBO3四元系压电陶瓷性能的影响,并研究压电振子的杂波抑制方法。结果表明,r(Zr/Ti)为0.71,w(MnO2)=0.5%时,材料的性能达到... 采用传统的压电陶瓷制备方法,研究锆钛比(r(Zr/Ti)、掺杂、烧成工艺对低频窄带Pb(Zn1/3Nb2/3)x(Sn1/3Nb2/3)yTiAZrBO3四元系压电陶瓷性能的影响,并研究压电振子的杂波抑制方法。结果表明,r(Zr/Ti)为0.71,w(MnO2)=0.5%时,材料的性能达到最佳:机械品质因数Qm=2 600,机电耦合系数k15=0.43,频率温度系数τf=29×10-6/℃;倒去振子两对角的棱角,可以有效地抑制低频厚度切变振动模式的杂波。 展开更多
关键词 铌锌-铌锡-锆钛酸铅压电陶瓷 厚度切变振动 低频窄带
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