β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
The Ga_(2)O_(3) films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters(such as argon–oxygen flow ratio, sputtering power, sputtering time and...The Ga_(2)O_(3) films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters(such as argon–oxygen flow ratio, sputtering power, sputtering time and annealing temperature)on the growth and properties(e.g., surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer(XRD), scanning electron microscope(SEM), and ultraviolet-visible spectrophotometer(UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the β-Ga_(2)O_(3) film are influenced by those parameters. All β-Ga_(2)O_(3) films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The I–V curves show that the Ohmic behavior between metal and β-Ga_(2)O_(3) films is obtained at 900℃. Those results will be helpful for the further research of β-Ga_(2)O_(3) photoelectric semiconductor.展开更多
Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes o...Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.展开更多
Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photo...Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.展开更多
The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices sh...The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.展开更多
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
基金Project supported by the Science and Technology Major Project of Shanxi Province,China (Grant No.20181102013)the “1331 Project” Engineering Research Center of Shanxi Province,China (Grant No.PT201801)the Natural Science Foundation of Shanxi Province,China (Grant No.201801D221131)。
文摘The Ga_(2)O_(3) films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters(such as argon–oxygen flow ratio, sputtering power, sputtering time and annealing temperature)on the growth and properties(e.g., surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer(XRD), scanning electron microscope(SEM), and ultraviolet-visible spectrophotometer(UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the β-Ga_(2)O_(3) film are influenced by those parameters. All β-Ga_(2)O_(3) films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The I–V curves show that the Ohmic behavior between metal and β-Ga_(2)O_(3) films is obtained at 900℃. Those results will be helpful for the further research of β-Ga_(2)O_(3) photoelectric semiconductor.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018 YFB 2200500)the National Natural Science Foundation of China(Grant Nos.62050073,62090054,and 61975196)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC022)。
文摘Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.
基金the National Natural Science Foundation of China(Grant Nos.61774019 and 51572033)the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China.
文摘Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.
基金the National Natural Science Foundation of China(Grant Nos.12035019,11690041,and 12075290)China National Postdoctoral Program for Innovative Talents(Grant No.BX20200340)+1 种基金China Postdoctoral Science Foundation(Grant No.2020M673539)CAS"Light of West China"Program,and the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)(Grant No.2020412).
文摘The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
