【Objectives】Si and microbial application could relieve the crop replanting problems(CRPs).We further studied the change of key microorganisms that are related to the beneficial effects,aiming at provide reference fo...【Objectives】Si and microbial application could relieve the crop replanting problems(CRPs).We further studied the change of key microorganisms that are related to the beneficial effects,aiming at provide reference for the manufacture and application of both microbial agents and Si fertilizer in food lily production.【Methods】A field experiment was conducted over a three-year period,from March 2019 to March 2022.The experimental field had been continuously cultivated with lily for 9 years.Three treatments were established:silicon fertilizer(SF),microbial agents(“Special 8^(TM)”,MF),and combined application of silicon fertilizer and microbial agents(SMF).A control group with blank soil(CK)was also included.At seedling stage of Lanzhou lilies in 2020 and 2021,the shoot and bulb dry weight,and the plant height and stem diameter of Lanzhou lilies were investigated for calculation of seedling index.In July 2020,20 plants were selected in each plot,and root zone soils were sampled at a depth of 20 cm,10 cm away from the roots,and then mixed to form a composite sample.The soil available Si and organic matter content were analyzed,and the fungal community structure and some specific microbial groups in soils were determined with high-throughput sequencing of ITS.【Results】All the three treatments significantly enhanced the lily plant growth and the seedling index,compared to CK.Besides,SF and MF treatments increased the relative abundances(RA)and diversity of fungal communities,and altered the community structures.The RA of some specific groups were found to be significantly correlated with the seedling index and/or soil available Si.Of them,the RA of the genera Fusarium,Dactylonectria,Humicola,Stilbella,and the species Humicola_grisea showed a positive correlation,while that of the genera Mortierella,Stilbella,Holtermanniella,and the species Mortierella_fatshederae showed a negative correlation with seedling index.The genera Fusarium,Stilbella,the species Humicola_grisea,and Dactylonectria_estremocensis showed a positive correlation,while the genura Stilbella,and the species Mortierella fatshederae showed a negative correlation with available Si content.In the co-occurence network of top twenty fungal genera and top sixteen bacterial genera(RA>0.2%),Holtermanniella was the only genus that interacted with the bacteria and negatively correlated with bacterial genus Blastococcus.Holtermanniella was also the most densely connected genera,followed by the genus Fusarium,Didymella and Humicola.In addition,the genus Holtermanniella was the key species connecting fungal and bacterial community in soil.Fungal functional prediction revealed that SF,MF and SMF treatments decreased plant pathogens guilds and increased the beneficial guilds Ectomycorrhizal,plant saprophyte,leaf saprophyte,and arbuscular mycorrhizal compared to CK.【Conclusions】Combined application of silicon fertilizer and microbial agents can alleviate continuous replanting problems of Lanzhou lilies through restoring the fungal community diversity,and promoting plant residue depredation,thus reducing soil born disease incidence.The beneficial genus Humicola and its one species H.grisea acts as bioconversion,and the genus Acremonium acts as plant pathogen inhibitor.展开更多
In order to explore the effects of different silicon preparations on the soil fertility of paddy fields,a pot experiment with Dongnong 427 was carried on.Different types of silicon preparations,including Si-50-G,Si-60...In order to explore the effects of different silicon preparations on the soil fertility of paddy fields,a pot experiment with Dongnong 427 was carried on.Different types of silicon preparations,including Si-50-G,Si-60-G,Si-RH,Si-50 and Si-60,were sprayed on the leaves of rice at the tillering stage,and CK was set in the control stage.The contents of alkali nitrogen,available phosphorus,available potassium and available silicon in soil were determined in the tillering stage,booting stage and maturity stage of rice.The results showed that spraying different silicon preparations at the tillering stage could promote the activation and release of soil available nutrients in different degrees.展开更多
Rice is a typical silicon-loving crop,known as"representative of silicic acid plant".Southeast Asia and other rice-producing countries have listed silicon fertilizer as the fourth most elemental fertilizer a...Rice is a typical silicon-loving crop,known as"representative of silicic acid plant".Southeast Asia and other rice-producing countries have listed silicon fertilizer as the fourth most elemental fertilizer after nitrogen,phosphorus and potassium.Therefore,improving the utilization of soil silicon and promoting the transformation of soil silicon form is of great significance to the growth of rice and the development of agriculture.In order to investigate the effects of silicon preparations on different forms of silicon in soil and silicon contenst in rice plants,a pot experiment with Dongnong 427 was carried out,spraying on rice leaves at the booting stage,and three treatment groups(Si-TG,Si-EG and Si-60G)and a control group(CK)were set up.The contents of available silicon,water-soluble silicon,amorphous silicon,active silicon in soil and plant silicon were measured at the heading stage and the maturity stage of rice,then the effect of silicon preparation on the silicon content of rice soil and plant was analyzed.The results showed that spraying silicon preparation could significantly improve the silicon content of rice plants,promote the transformation of silicon forms in soil to varying degrees,and improve the silicon supply capacity of soil.Compared with CK,the soil available silicon content increased by 7.42%-8.26%at the heading stage and 6.70%at the maturity stage.The Si-EG treatment at the heading stage had the best effect on increasing the available silicon content of the soil,which was 8.26%higher than that of CK,reaching a significant level;the Si-TG treatment at the maturity stage had the best effect on increasing the silicon content of the plant,and the silicon content of the plant was 27.17%higher than that of CK,reaching a significant level.展开更多
Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate ...Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.展开更多
Silicon nitride (Si 3N 4) has been the main material for balls in ceramic ball bearings, for its lower density, high strength, high hardness, fine thermal stability and anticorrosive, and is widely used in various fie...Silicon nitride (Si 3N 4) has been the main material for balls in ceramic ball bearings, for its lower density, high strength, high hardness, fine thermal stability and anticorrosive, and is widely used in various fields, such as high speed and high temperature areojet engines, precision machine tools and chemical engineer machines. Silicon nitride ceramics is a kind of brittle and hard material that is difficult to machining. In the traditional finishing process of silicon nitride balls, balls are lapped by expensive diamond abrasive. The machining is inefficiency and the cost is high, but also lots of pits, scratch subsurface micro crazes and dislocations will be caused on the surface of the balls, the performance of the ball bearings would be declined seriously. In these year, a kind of new technology known as chemical mechanical polishing is introduced in the ultraprecision machining process of ceramic balls. In this technology, abrasives such as ZrO 2, CeO 2 whose hardness is close to or lower than the work material (Si 3N 4) are used to polishing the balls. In special slurry, these abrasives can chemo-mechanically react with the work material and environment (air or water) to generate softer material (SiO 2). And the resultants will be removed easily at 0.1 nm level. So the surface defects can be minimized, very smooth surface (Ra=4 nm) and fine sphericity (0.15～0.25 μm ) can be obtained, and the machining efficiency is also improved. The action mechanism of the abrasives in the chemical mechanical polishing process in finishing of silicon nitride ball will be introduced in this paper.展开更多
Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pr...Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pressure and working temperature. The etching process of Si3N4 is studied by inductively coupled plasma (ICP) with a gas mixture of SF6 and O2. The influence of the technique parameters, such as ICP power, DC bias, gas composition, total flow rate, on the etching selectivity of Si3N4/EPG533 which is used as a mask layer and the etching rate of Si3N4 is studied, in order to get a better etching selectivity of Si3N4/EPG533 with a faster etching rate of Si3N4. The optimized process parameters of etching Si3N4 by ICP are obtained after a series of experiments and analysis. Under the conditions of total ICP power of 250 W, DC bias of 50W, total flow rate of 40 sccm and O2 composition of 30%, the etching selectivity of 2.05 can be reached when Si3N4 etching rate is 336 nm/min.展开更多
Since the volume variation of silicon particles during cycling,the binding spots between Cu current collector and silicon anode raised to be one of the critical binding problems.In this work,an amino-modified Cu curre...Since the volume variation of silicon particles during cycling,the binding spots between Cu current collector and silicon anode raised to be one of the critical binding problems.In this work,an amino-modified Cu current collector(Cu^(*))is fabricated to tackle this issue.The amino groups on Cu^(*)surface increase its hydrophilicity,which is conducive to the curing process of aqueous slurry on its surface.Meanwhile,these amino groups can form abundant amide bonds with carboxyl groups from the adopted polyacrylic acid(PAA)binder.The combined action composed of the covalent bond and mechanical interlocking could reduce the contact loss inside the electrode.However,high concentration silane coupling agent treatment will weaken the surface roughness of Cu^(*)and weaken mechanical interlocking.What is more,the insulation of silane coupling agent reduces the conductivity of Cu and increases the impedance of battery.Considering the effect of silane coupling agent comprehensively,electrochemical performance of Cu^(*)-0.05%is best.展开更多
The effects of toughener and coupling agent on special epoxy silicone adhesive were discussed by researching the surface morphology characters, thermal properties and shear strength of the adhesive. The results indica...The effects of toughener and coupling agent on special epoxy silicone adhesive were discussed by researching the surface morphology characters, thermal properties and shear strength of the adhesive. The results indicate that silicone coupling agent (KH-550) can improve the shear strength of the epoxy silicone adhesive effectively. The mass fraction of the toughener in the epoxy silicone adhesive plays an important role in its properties. When the mass fraction of the toughener is less than 14%, the shear strength of the adhesive is low. When the mass fraction of the toughener is over 33%, thermal properties and shear strength of the adhesive decrease with the increasing of the toughener. The mass fraction of toughener of 25% results in good integral properties of the epoxy silicone adhesive. The morphologic analysis indicates that the micro-phase separation exists in the epoxy molecular chain and the silicone molecular chain of the epoxy silicone adhesive.展开更多
Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the ...Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the microstructural characteristics of explosive cladded dissimilar grade aluminium(Al 1100-Al 5052) clad composites reinforced with silicon carbide(SiC) particles is presented.Microstructure taken at the interface by optical and scanning electron microscopes(SEM) revealed the formation of a silicon carbide layer between the dissimilar grade aluminium sheets.Though reaction layers were witnessed at few locations along the interface,the diffusion of atoms between the participant metals is not visible as confirmed by energy dispersive spectroscopy,elemental mapping,line analysis and X-ray diffraction(XRD).The variation in microhardness at various regions of the silicon carbide reinforced dissimilar aluminium explosive clad is reported.The increase in tensile strength of the SiC laced clad is also presented.展开更多
Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircra...Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircraft,improve the fuel efficiency and enhance the maintenance duration.This study proposes the development of dissimilar grade aluminium(aluminium 1100-aluminium 5052)composites with different reinforcement’s viz.,stainless steel wire-mesh,silicon carbide(SiC)powders and SiC powder interspersed wire-mesh,by explosive cladding technique.Wire-mesh enhances the friction and restricts the movement of flyer plate to craft a defect free clad,while SiC particles form a band on the interface.Highest strength is obtained when SiC powder interspersed wire mesh is employed as reinforcement.The dissimilar aluminium explosive clad with SiC particle reinforcement results in lower strength,which is higher than that of the weaker parent alloy and that of the conventional dissimilar aluminium explosive clads without any reinforcement.展开更多
In the development of rechargeable lithium ion batteries(LIBs),silicon anodes have attracted much attention because of their extremely high theoretical capacity,relatively low Li-insertion voltage and the availability...In the development of rechargeable lithium ion batteries(LIBs),silicon anodes have attracted much attention because of their extremely high theoretical capacity,relatively low Li-insertion voltage and the availability of silicon resources.However,their large volume expansion and fragile solid electrolyte interface(SEI)film hinder their commercial application.To solve these problems,Si has been combined with various carbon materials to increase their structural stability and improve their interface properties.The use of different carbon materials,such as amorphous carbon and graphite,as three-dimensional(3D)protective anode coatings that help buffer mechanical strain and isolate the electrolyte is detailed,and novel methods for applying the coatings are outlined.However,carbon materials used as a protective layer still have some disadvantages,necessitating their modification.Recent developments have focused on modifying the protective carbon shells,and substitutes for the carbon have been suggested.展开更多
To investigate the effects of silicon formulations on the cold tolerance of rice seedlings,Song Japonica 16(not cold tolerant)and Dongnong 427(cold tolerant)rice varieties were used as test materials and four differen...To investigate the effects of silicon formulations on the cold tolerance of rice seedlings,Song Japonica 16(not cold tolerant)and Dongnong 427(cold tolerant)rice varieties were used as test materials and four different types of silicon formulations,Si-50-G,Si-60-G,Si-T-G,and Si-E-G,were applied as foliar sprays at the seedling stage,and a control group CK(equal amount of distilled water)was set up.One week after the first silicon spray,two types of rice were subjected to low-temperature stress treatments at day/night temperatures of 12℃/10℃for 2,4,6,and 8 days.The effects of different silicon formulations on the chlorophyll,proline(Pro)and soluble sugar contents as well as superoxide dismutase(SOD),peroxidase(POD)and catalase(CAT)activities of rice seedlings under low-temperature stress were compared to find out the effects of silicon formulations on the cold tolerance of rice seedlings.The results showed that silicon formulations could significantly increase the chlorophyll content of rice seedling leaves,with Si-50-G being the most effective,with a significant increment of 40.17%compared to the CK at 2 days of low temperature.Four silicon formulations significantly increased the proline content and soluble sugar content of rice leaves at low temperature for 4-8 days.For Song Japonica 16,the most significant increment in leaf POD activity was observed in Si-E-G treatment at 2,4 and 8 days of temperature stress,with 73.58%,20.95%and 217.24%increases compared to the CK,respectively.For 4 and 6 days of temperature stress,the most significant increase in CAT activity was observed in Si-E-G treatment,with 25.70%and 75.78%increases compared to the CK,respectively.For Dongnong 427,the Si-60-G treatment showed the highest increase in leaf SOD activity for 4 and 8 days of temperature stress,with significant increases of 58.15%and 82.76%compared to the CK,respectively,and the Si-E-G treatment showed the highest increase in leaf POD activity for 2 and 8 days of temperature stress,with significant increases of 97.75%and 245.10%compared to the CK,respectively.It showed that the spraying of silicon formulations could significantly enhance the cold tolerance of rice.This study provided a scientific basis for the rational use of silicon formulations to enhance cold tolerance in rice and had important theoretical and practical significance for ensuring sustainable high and stable rice yields in Heilongjiang Province,as well as for the development of silicon fertilizers.展开更多
We present the first large dataset of dissolved silicon isotopes signatures(δ<sup>30</sup>Si)in different tropical rivers,including the Amazon and the Congo,the two largest silicon suppliers to the world ...We present the first large dataset of dissolved silicon isotopes signatures(δ<sup>30</sup>Si)in different tropical rivers,including the Amazon and the Congo,the two largest silicon suppliers to the world ocean.A two-year long monthly series was obtained in the Congo River upstream of the Kinshasa/Brazzaville urban zone.Spatial and temporal variations in the Amazon River and its main tributaries were studied for one year.Both the Congo and Amazon rivers convey similar meanδ<sup>30</sup>Si signatures to the ocean （close to +0.8‰）,in the range of the few previously published data for those rivers.The Congo River exhibits limited seasonal variations,with the exception of some largeδ<sup>30</sup>Si variations that展开更多
Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing process...Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing processes. A critical issue in wafer production is the waviness induced by wire sawing. If this waviness is not removed, it will affect wafer flatness and semiconductor performance. In practice, both lapping and grinding have been used to flatten wire-sawn wafers. Although grinding is not as effective as lapping in removing waviness, it has many other advantages over lapping (such as higher throughput, fully automatic, and more benign to environment) and has great potential to reduce manufacturing cost of silicon wafers. This paper presents a finite element analysis (FEA) study on grinding and lapping of wire-sawn silicon wafers. An FEA model is first developed to simulate the waviness deformation of wire-sawn wafers in grinding and lapping processes. It is then used to explain how the waviness is removed or reduced by lapping and grinding and why the effectiveness of grinding in removing waviness is different from that of lapping. Furthermore, the model is used to study the effects of various parameters including active-grinding-zone orientation, grinding force, waviness wavelength, and waviness height on the reduction and elimination of waviness. Finally, the results of pilot experiments to verify the model are discussed.展开更多
Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resi...Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.展开更多
The influence of the residual stress in surface of ceramic balls on the fatigue life is large, because the life of silicon nitride ball bearings is more sensitive to the load acted on the bearings than the life of all...The influence of the residual stress in surface of ceramic balls on the fatigue life is large, because the life of silicon nitride ball bearings is more sensitive to the load acted on the bearings than the life of all-steel ball bearings. In this paper, the influence of thermal stress produced in sintering and mechanical stress formed in lapping process on residual stress in surface of silicon nitride ceramic balls was discussed. The residual compress stress will be formed in the surface of silicon nitride ceramic balls after sintering. The residual tensile stress will be formed in surface of silicon nitride ceramic balls in lapping process, and the size of abrasive particle is smaller, such trend is stronger. In this paper the residual stress was measured by the xylometric measurement in which the material in surface was peeled with lapping. The distribution of residual stress in surface can be calculated with the variation in specific volume. The technological parameter with which the material was peeled by lapping was given, for minimizing the extra influence of the residual stress forming in peeling on the original residual stress in surface, the abrasive particle size would not be too small and the load impressed would not be too large. Some experimental researches on residual stress in surface of silicon nitride ceramic balls were made. The surface of silicon nitride ceramic balls presented residual compressive stress after sintering and the influence of the ball size on the residual stress is feeble. It is expected that the size of ball blank is same for achieving the same residual compressive stress in surface on balls after final machining. In lapping process, the surface of silicon nitride ceramic balls presented residual tensile stress, the larger the load which is impressed on single ball, the larger the amplitude of residual tensile stress is; the smaller the abrasive particle, the stronger the trend of plastic deformation is and the larger the amplitude of residual tensile stress is.展开更多
基金Key Research project of Gansu Province of China(22YF7NA108)National Natural Science Foundation of China(31860549)+1 种基金Industry Supporting Project from Education Department of Gansu Province(2023CYZC-49)Major Science and Technology project of Gansu province(24ZDNA006)。
文摘【Objectives】Si and microbial application could relieve the crop replanting problems(CRPs).We further studied the change of key microorganisms that are related to the beneficial effects,aiming at provide reference for the manufacture and application of both microbial agents and Si fertilizer in food lily production.【Methods】A field experiment was conducted over a three-year period,from March 2019 to March 2022.The experimental field had been continuously cultivated with lily for 9 years.Three treatments were established:silicon fertilizer(SF),microbial agents(“Special 8^(TM)”,MF),and combined application of silicon fertilizer and microbial agents(SMF).A control group with blank soil(CK)was also included.At seedling stage of Lanzhou lilies in 2020 and 2021,the shoot and bulb dry weight,and the plant height and stem diameter of Lanzhou lilies were investigated for calculation of seedling index.In July 2020,20 plants were selected in each plot,and root zone soils were sampled at a depth of 20 cm,10 cm away from the roots,and then mixed to form a composite sample.The soil available Si and organic matter content were analyzed,and the fungal community structure and some specific microbial groups in soils were determined with high-throughput sequencing of ITS.【Results】All the three treatments significantly enhanced the lily plant growth and the seedling index,compared to CK.Besides,SF and MF treatments increased the relative abundances(RA)and diversity of fungal communities,and altered the community structures.The RA of some specific groups were found to be significantly correlated with the seedling index and/or soil available Si.Of them,the RA of the genera Fusarium,Dactylonectria,Humicola,Stilbella,and the species Humicola_grisea showed a positive correlation,while that of the genera Mortierella,Stilbella,Holtermanniella,and the species Mortierella_fatshederae showed a negative correlation with seedling index.The genera Fusarium,Stilbella,the species Humicola_grisea,and Dactylonectria_estremocensis showed a positive correlation,while the genura Stilbella,and the species Mortierella fatshederae showed a negative correlation with available Si content.In the co-occurence network of top twenty fungal genera and top sixteen bacterial genera(RA>0.2%),Holtermanniella was the only genus that interacted with the bacteria and negatively correlated with bacterial genus Blastococcus.Holtermanniella was also the most densely connected genera,followed by the genus Fusarium,Didymella and Humicola.In addition,the genus Holtermanniella was the key species connecting fungal and bacterial community in soil.Fungal functional prediction revealed that SF,MF and SMF treatments decreased plant pathogens guilds and increased the beneficial guilds Ectomycorrhizal,plant saprophyte,leaf saprophyte,and arbuscular mycorrhizal compared to CK.【Conclusions】Combined application of silicon fertilizer and microbial agents can alleviate continuous replanting problems of Lanzhou lilies through restoring the fungal community diversity,and promoting plant residue depredation,thus reducing soil born disease incidence.The beneficial genus Humicola and its one species H.grisea acts as bioconversion,and the genus Acremonium acts as plant pathogen inhibitor.
基金Supported by the National Natural Science Foundation of China(31340032)。
文摘In order to explore the effects of different silicon preparations on the soil fertility of paddy fields,a pot experiment with Dongnong 427 was carried on.Different types of silicon preparations,including Si-50-G,Si-60-G,Si-RH,Si-50 and Si-60,were sprayed on the leaves of rice at the tillering stage,and CK was set in the control stage.The contents of alkali nitrogen,available phosphorus,available potassium and available silicon in soil were determined in the tillering stage,booting stage and maturity stage of rice.The results showed that spraying different silicon preparations at the tillering stage could promote the activation and release of soil available nutrients in different degrees.
基金Supported by the New Ideas Team and the Doctoral Research Foundation of Northeast Agricultural University(Topic CXZ003,20082010)the Scientific Research Fund of Heilongjiang Provincial Education Department(11551067)。
文摘Rice is a typical silicon-loving crop,known as"representative of silicic acid plant".Southeast Asia and other rice-producing countries have listed silicon fertilizer as the fourth most elemental fertilizer after nitrogen,phosphorus and potassium.Therefore,improving the utilization of soil silicon and promoting the transformation of soil silicon form is of great significance to the growth of rice and the development of agriculture.In order to investigate the effects of silicon preparations on different forms of silicon in soil and silicon contenst in rice plants,a pot experiment with Dongnong 427 was carried out,spraying on rice leaves at the booting stage,and three treatment groups(Si-TG,Si-EG and Si-60G)and a control group(CK)were set up.The contents of available silicon,water-soluble silicon,amorphous silicon,active silicon in soil and plant silicon were measured at the heading stage and the maturity stage of rice,then the effect of silicon preparation on the silicon content of rice soil and plant was analyzed.The results showed that spraying silicon preparation could significantly improve the silicon content of rice plants,promote the transformation of silicon forms in soil to varying degrees,and improve the silicon supply capacity of soil.Compared with CK,the soil available silicon content increased by 7.42%-8.26%at the heading stage and 6.70%at the maturity stage.The Si-EG treatment at the heading stage had the best effect on increasing the available silicon content of the soil,which was 8.26%higher than that of CK,reaching a significant level;the Si-TG treatment at the maturity stage had the best effect on increasing the silicon content of the plant,and the silicon content of the plant was 27.17%higher than that of CK,reaching a significant level.
基金Project(12C0379) supported by Scientific Research Fund of Hunan Province,China
文摘Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.
文摘Silicon nitride (Si 3N 4) has been the main material for balls in ceramic ball bearings, for its lower density, high strength, high hardness, fine thermal stability and anticorrosive, and is widely used in various fields, such as high speed and high temperature areojet engines, precision machine tools and chemical engineer machines. Silicon nitride ceramics is a kind of brittle and hard material that is difficult to machining. In the traditional finishing process of silicon nitride balls, balls are lapped by expensive diamond abrasive. The machining is inefficiency and the cost is high, but also lots of pits, scratch subsurface micro crazes and dislocations will be caused on the surface of the balls, the performance of the ball bearings would be declined seriously. In these year, a kind of new technology known as chemical mechanical polishing is introduced in the ultraprecision machining process of ceramic balls. In this technology, abrasives such as ZrO 2, CeO 2 whose hardness is close to or lower than the work material (Si 3N 4) are used to polishing the balls. In special slurry, these abrasives can chemo-mechanically react with the work material and environment (air or water) to generate softer material (SiO 2). And the resultants will be removed easily at 0.1 nm level. So the surface defects can be minimized, very smooth surface (Ra=4 nm) and fine sphericity (0.15～0.25 μm ) can be obtained, and the machining efficiency is also improved. The action mechanism of the abrasives in the chemical mechanical polishing process in finishing of silicon nitride ball will be introduced in this paper.
文摘Mechanical properties and corrosion resistance of Si3N4 films are studied by using different experiment parameters, such as plasma enhanced chemical vapor deposition(PECVD) RF power, ratio of reaction gas, reaction pressure and working temperature. The etching process of Si3N4 is studied by inductively coupled plasma (ICP) with a gas mixture of SF6 and O2. The influence of the technique parameters, such as ICP power, DC bias, gas composition, total flow rate, on the etching selectivity of Si3N4/EPG533 which is used as a mask layer and the etching rate of Si3N4 is studied, in order to get a better etching selectivity of Si3N4/EPG533 with a faster etching rate of Si3N4. The optimized process parameters of etching Si3N4 by ICP are obtained after a series of experiments and analysis. Under the conditions of total ICP power of 250 W, DC bias of 50W, total flow rate of 40 sccm and O2 composition of 30%, the etching selectivity of 2.05 can be reached when Si3N4 etching rate is 336 nm/min.
基金Project(2019R01006)supported by the Leading Innovative and Entrepreneur Team Introduction Program of Zhejiang Province,ChinaProject(2018YFB0104300)supported by the National Key R&D Program of China。
文摘Since the volume variation of silicon particles during cycling,the binding spots between Cu current collector and silicon anode raised to be one of the critical binding problems.In this work,an amino-modified Cu current collector(Cu^(*))is fabricated to tackle this issue.The amino groups on Cu^(*)surface increase its hydrophilicity,which is conducive to the curing process of aqueous slurry on its surface.Meanwhile,these amino groups can form abundant amide bonds with carboxyl groups from the adopted polyacrylic acid(PAA)binder.The combined action composed of the covalent bond and mechanical interlocking could reduce the contact loss inside the electrode.However,high concentration silane coupling agent treatment will weaken the surface roughness of Cu^(*)and weaken mechanical interlocking.What is more,the insulation of silane coupling agent reduces the conductivity of Cu and increases the impedance of battery.Considering the effect of silane coupling agent comprehensively,electrochemical performance of Cu^(*)-0.05%is best.
基金Project supported by the National High-Tech Research and Development Program of China
文摘The effects of toughener and coupling agent on special epoxy silicone adhesive were discussed by researching the surface morphology characters, thermal properties and shear strength of the adhesive. The results indicate that silicone coupling agent (KH-550) can improve the shear strength of the epoxy silicone adhesive effectively. The mass fraction of the toughener in the epoxy silicone adhesive plays an important role in its properties. When the mass fraction of the toughener is less than 14%, the shear strength of the adhesive is low. When the mass fraction of the toughener is over 33%, thermal properties and shear strength of the adhesive decrease with the increasing of the toughener. The mass fraction of toughener of 25% results in good integral properties of the epoxy silicone adhesive. The morphologic analysis indicates that the micro-phase separation exists in the epoxy molecular chain and the silicone molecular chain of the epoxy silicone adhesive.
文摘Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the microstructural characteristics of explosive cladded dissimilar grade aluminium(Al 1100-Al 5052) clad composites reinforced with silicon carbide(SiC) particles is presented.Microstructure taken at the interface by optical and scanning electron microscopes(SEM) revealed the formation of a silicon carbide layer between the dissimilar grade aluminium sheets.Though reaction layers were witnessed at few locations along the interface,the diffusion of atoms between the participant metals is not visible as confirmed by energy dispersive spectroscopy,elemental mapping,line analysis and X-ray diffraction(XRD).The variation in microhardness at various regions of the silicon carbide reinforced dissimilar aluminium explosive clad is reported.The increase in tensile strength of the SiC laced clad is also presented.
文摘Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircraft,improve the fuel efficiency and enhance the maintenance duration.This study proposes the development of dissimilar grade aluminium(aluminium 1100-aluminium 5052)composites with different reinforcement’s viz.,stainless steel wire-mesh,silicon carbide(SiC)powders and SiC powder interspersed wire-mesh,by explosive cladding technique.Wire-mesh enhances the friction and restricts the movement of flyer plate to craft a defect free clad,while SiC particles form a band on the interface.Highest strength is obtained when SiC powder interspersed wire mesh is employed as reinforcement.The dissimilar aluminium explosive clad with SiC particle reinforcement results in lower strength,which is higher than that of the weaker parent alloy and that of the conventional dissimilar aluminium explosive clads without any reinforcement.
文摘In the development of rechargeable lithium ion batteries(LIBs),silicon anodes have attracted much attention because of their extremely high theoretical capacity,relatively low Li-insertion voltage and the availability of silicon resources.However,their large volume expansion and fragile solid electrolyte interface(SEI)film hinder their commercial application.To solve these problems,Si has been combined with various carbon materials to increase their structural stability and improve their interface properties.The use of different carbon materials,such as amorphous carbon and graphite,as three-dimensional(3D)protective anode coatings that help buffer mechanical strain and isolate the electrolyte is detailed,and novel methods for applying the coatings are outlined.However,carbon materials used as a protective layer still have some disadvantages,necessitating their modification.Recent developments have focused on modifying the protective carbon shells,and substitutes for the carbon have been suggested.
基金the National Natural Science Foundation of China(31471440)。
文摘To investigate the effects of silicon formulations on the cold tolerance of rice seedlings,Song Japonica 16(not cold tolerant)and Dongnong 427(cold tolerant)rice varieties were used as test materials and four different types of silicon formulations,Si-50-G,Si-60-G,Si-T-G,and Si-E-G,were applied as foliar sprays at the seedling stage,and a control group CK(equal amount of distilled water)was set up.One week after the first silicon spray,two types of rice were subjected to low-temperature stress treatments at day/night temperatures of 12℃/10℃for 2,4,6,and 8 days.The effects of different silicon formulations on the chlorophyll,proline(Pro)and soluble sugar contents as well as superoxide dismutase(SOD),peroxidase(POD)and catalase(CAT)activities of rice seedlings under low-temperature stress were compared to find out the effects of silicon formulations on the cold tolerance of rice seedlings.The results showed that silicon formulations could significantly increase the chlorophyll content of rice seedling leaves,with Si-50-G being the most effective,with a significant increment of 40.17%compared to the CK at 2 days of low temperature.Four silicon formulations significantly increased the proline content and soluble sugar content of rice leaves at low temperature for 4-8 days.For Song Japonica 16,the most significant increment in leaf POD activity was observed in Si-E-G treatment at 2,4 and 8 days of temperature stress,with 73.58%,20.95%and 217.24%increases compared to the CK,respectively.For 4 and 6 days of temperature stress,the most significant increase in CAT activity was observed in Si-E-G treatment,with 25.70%and 75.78%increases compared to the CK,respectively.For Dongnong 427,the Si-60-G treatment showed the highest increase in leaf SOD activity for 4 and 8 days of temperature stress,with significant increases of 58.15%and 82.76%compared to the CK,respectively,and the Si-E-G treatment showed the highest increase in leaf POD activity for 2 and 8 days of temperature stress,with significant increases of 97.75%and 245.10%compared to the CK,respectively.It showed that the spraying of silicon formulations could significantly enhance the cold tolerance of rice.This study provided a scientific basis for the rational use of silicon formulations to enhance cold tolerance in rice and had important theoretical and practical significance for ensuring sustainable high and stable rice yields in Heilongjiang Province,as well as for the development of silicon fertilizers.
文摘We present the first large dataset of dissolved silicon isotopes signatures(δ<sup>30</sup>Si)in different tropical rivers,including the Amazon and the Congo,the two largest silicon suppliers to the world ocean.A two-year long monthly series was obtained in the Congo River upstream of the Kinshasa/Brazzaville urban zone.Spatial and temporal variations in the Amazon River and its main tributaries were studied for one year.Both the Congo and Amazon rivers convey similar meanδ<sup>30</sup>Si signatures to the ocean （close to +0.8‰）,in the range of the few previously published data for those rivers.The Congo River exhibits limited seasonal variations,with the exception of some largeδ<sup>30</sup>Si variations that
文摘Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing processes. A critical issue in wafer production is the waviness induced by wire sawing. If this waviness is not removed, it will affect wafer flatness and semiconductor performance. In practice, both lapping and grinding have been used to flatten wire-sawn wafers. Although grinding is not as effective as lapping in removing waviness, it has many other advantages over lapping (such as higher throughput, fully automatic, and more benign to environment) and has great potential to reduce manufacturing cost of silicon wafers. This paper presents a finite element analysis (FEA) study on grinding and lapping of wire-sawn silicon wafers. An FEA model is first developed to simulate the waviness deformation of wire-sawn wafers in grinding and lapping processes. It is then used to explain how the waviness is removed or reduced by lapping and grinding and why the effectiveness of grinding in removing waviness is different from that of lapping. Furthermore, the model is used to study the effects of various parameters including active-grinding-zone orientation, grinding force, waviness wavelength, and waviness height on the reduction and elimination of waviness. Finally, the results of pilot experiments to verify the model are discussed.
文摘Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.
文摘The influence of the residual stress in surface of ceramic balls on the fatigue life is large, because the life of silicon nitride ball bearings is more sensitive to the load acted on the bearings than the life of all-steel ball bearings. In this paper, the influence of thermal stress produced in sintering and mechanical stress formed in lapping process on residual stress in surface of silicon nitride ceramic balls was discussed. The residual compress stress will be formed in the surface of silicon nitride ceramic balls after sintering. The residual tensile stress will be formed in surface of silicon nitride ceramic balls in lapping process, and the size of abrasive particle is smaller, such trend is stronger. In this paper the residual stress was measured by the xylometric measurement in which the material in surface was peeled with lapping. The distribution of residual stress in surface can be calculated with the variation in specific volume. The technological parameter with which the material was peeled by lapping was given, for minimizing the extra influence of the residual stress forming in peeling on the original residual stress in surface, the abrasive particle size would not be too small and the load impressed would not be too large. Some experimental researches on residual stress in surface of silicon nitride ceramic balls were made. The surface of silicon nitride ceramic balls presented residual compressive stress after sintering and the influence of the ball size on the residual stress is feeble. It is expected that the size of ball blank is same for achieving the same residual compressive stress in surface on balls after final machining. In lapping process, the surface of silicon nitride ceramic balls presented residual tensile stress, the larger the load which is impressed on single ball, the larger the amplitude of residual tensile stress is; the smaller the abrasive particle, the stronger the trend of plastic deformation is and the larger the amplitude of residual tensile stress is.
