An approach was presented for synthesis of semiconducting single-walled carbon nanotubes(SWNTs) by sulfur(S) doping with the method of graphite arc discharge. Raman spectroscopy, UV-vis-NIR absorption spectroscopy and...An approach was presented for synthesis of semiconducting single-walled carbon nanotubes(SWNTs) by sulfur(S) doping with the method of graphite arc discharge. Raman spectroscopy, UV-vis-NIR absorption spectroscopy and electronic properties measurements indicated the semconducting properties of the SWNTs samples. Simulant calculation indicated that S doping could induce convertion of metallic SWNTs into semiconducting ones. This strategy may pave a way for the direct synthesis of pure semiconducting SWNTs.展开更多
Semiconducting conjugated polymer nanoparticles(SPNs)represent an emerging class of phototheranostic materi-als with great promise for cancer treatment.In this report,low-bandgap electron donoracceptor(DA)-conjugated ...Semiconducting conjugated polymer nanoparticles(SPNs)represent an emerging class of phototheranostic materi-als with great promise for cancer treatment.In this report,low-bandgap electron donoracceptor(DA)-conjugated SPNs with sur-face cloaked by red blood cell membrane(RBCM)are developed for highly e ective photoacoustic imaging and photothermal therapy.The resulting RBCM-coated SPN(SPN@RBCM)displays remarkable near-infrared light absorption and good photosta-bility,as well as high photothermal conver-sion e ciency for photoacoustic imaging and photothermal therapy.Particularly,due to the small size(<5 nm),SPN@RBCM has the advantages of deep tumor penetration and rapid clearance from the body with no appreciable toxicity.The RBCM endows the SPNs with prolonged systematic circulation time,less reticuloendothelial system uptake and reduced immune-recognition,hence improving tumor accumulation after intravenous injection,which provides strong photoacoustic signals and exerts excellent photothermal therapeutic e ects.Thus,this work provides a valuable paradigm for safe and highly e cient tumor pho-toacoustic imaging and photothermal therapy for further clinical translation.展开更多
We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs...We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs).Under the condition of pump on-resonance and off-resonance,the absorption spectrum experiences the conversion from Fano resonance to Rabi-like splitting in different parametric regimes.In addition,the Fano resonances are accompanied by the rapid normal phase dispersion,which will indicate the coherent optical propagation.The results indicate that the group velocity index is tunable with controlling the interaction between the QD and MFs,which can reach the conversion between the fast-and slow-light.Fano resonance will be another method to detect MFs and our research may indicate prospective applications in quantum information processing based on the hybrid QD-SNW/SC devices.展开更多
This perspective paper introduces the concept that nanocarbons and related materials such as carbon dots are an interesting intrinsic photocatalytic semiconducting material, and not only a modifier of the existing (se...This perspective paper introduces the concept that nanocarbons and related materials such as carbon dots are an interesting intrinsic photocatalytic semiconducting material, and not only a modifier of the existing (semiconducting) materials to prepare hybrid materials. The semiconducting properties of the nanocarbons, and the possibility to have the band gap within the visible-light region through defect band engineering, introduction of light heteroatoms and control/manipulation of the curvature or surface functionalization are discussed. These materials are conceptually different from the 'classical' semiconducting photocatalysts, because semiconductor domains with tuneable characteristics are embedded in a conductive carbon matrix, with the presence of various functional groups (as C=0 groups) enhancing charge separation by trapping electrons. These nanocarbons open a range of new possibilities for photocatalysis both for energetic and environmental applications. The use of nanocarbons as quantum dots and photo luminescent materials was also analysed. (C) 2017 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.展开更多
Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics.However,a layered two-dimensional form of these materials has been rarely reported.Here,we realize se...Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics.However,a layered two-dimensional form of these materials has been rarely reported.Here,we realize semiconducting Cu_(2)Se by direct selenization of Cu(111).Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure.X-ray photoelectron spectroscopy data reveal chemical composition of the sample,which is Cu_(2)Se.The observed moire pattern indicates a lattice mismatch between Cu_(2)Se and the underlying Cu(111)-√3×√3 surface.Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu_(2)Se exhibits a band gap of 0.78 eV.Furthermore,the calculated density of states and band structure demonstrate that the isolated Cu_(2)Se is a semiconductor with an indirect band gap of-0.8 eV,which agrees quite well with the experimental results.Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.展开更多
Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy （EDS）, x-ray ...Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy （EDS）, x-ray photoelectron spectroscopy （XPS） and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2＋ and Fe3＋, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.展开更多
The exciton states of semiconducting carbon nanotubes are calculated by a tight-binding model supplemented by Coulomb interactions under the combined effect of uniaxial strain and magnetic field. It is found that the ...The exciton states of semiconducting carbon nanotubes are calculated by a tight-binding model supplemented by Coulomb interactions under the combined effect of uniaxial strain and magnetic field. It is found that the excitation energies and absorption spectra of zigzag tubes（11,0） and（10,0） show opposite trends with the strain under the action of the magnetic field. For the（11,0） tube, the excitation energy decreases with the increasing uniaxial strain, with a splitting appearing in the absorption spectra. For the（10,0） tube, the variation trend firstly increases and then decreases, with a reversal point appearing in the absorption spectra. More interesting,at the reversal point the intensity of optical absorption is the largest because of the degeneracy of the two bands nearest to the Fermi Level, which is expected to be observed in the future experiment. The similar variation trend is also exhibited in the binding energy for the two kinds of semiconducting tubes.展开更多
Semiconducting cuprous oxide films were electrodeposited onto conducting glasses coated with Indium Tin Oxide （ITO） using potentiostatic method. The electrodes were examined by means of X-Ray Diffraction （XRD） and...Semiconducting cuprous oxide films were electrodeposited onto conducting glasses coated with Indium Tin Oxide （ITO） using potentiostatic method. The electrodes were examined by means of X-Ray Diffraction （XRD） and X-ray Photoelectron Spectrum （XPS）. The results indicate that the prepared films are cubic Cu2O crystals, and annealing enhances the size and preferred orientation of the films. The photoelectric conversion mechanism of semiconducting ITO/Cu2O electrodes in 0.1 mol/L potassium sulfate （K2SO4） solution is further discussed by using Linear Sweep Voltammetry （LSV） method. The differences of photoelectric conversion of electrodes are reasonably deduced and proved through surfactant modifying, annealing or not, respectively.展开更多
Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analys...Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analysis.Among various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble metals.This review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection limits.The key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured SMOs.In addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also discussed.Moreover,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in detail.Finally,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed.展开更多
Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-j...Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-junction, the electrolyte layer handled at high temperature showed nano-fiber microstructures accompanied with greatly improved salt solubility. Ions with high mobility were confined in the nano-fibrous channels leading to the semiconducting polymer layer,which is favorable for modulating dynamic doping at the semiconducting polymer/electrolyte interface by pulse frequency.Such a device realized synaptic-like frequency selectivity, i.e., depression at low frequency stimulation but potentiation at high-frequency stimulation.展开更多
Polymer thin-film transistors （PTFTs） based on poly（3-hexylthiophene） are fabricated by the spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illuminat...Polymer thin-film transistors （PTFTs） based on poly（3-hexylthiophene） are fabricated by the spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7×10^3 at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low： only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.展开更多
Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone....Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.展开更多
A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic ...A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.展开更多
Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differe...Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differences in Te inclusion distribution.Obvious difference is not observed in Fourier transform infrared(FTIR)spectra,UV-Vis-NIR transmittance spectra,and I-V measurements.However,carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC)measurements.Low temperature photoluminescence(PL)measurement presents sharp emission peaks of D^(0)X and A^(0)X,and relatively large peak of D^(0)X(or A^(0)X)/Dcomplex for T04,indicating a better crystalline quality.Thermally stimulated current(TSC)spectrum shows higher density of shallow point defects,i.e.,Cd vacancies,In^(+)_(Cd),etc.,in W02 sample,which could be responsible for the deterioration of electron mobility.展开更多
The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN f...The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.展开更多
Mo-doped SnO2 （MTO） nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo dopin...Mo-doped SnO2 （MTO） nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.展开更多
Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. Th...Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 10^16 cm^-3.展开更多
基金supported by National Natural Science Foundation of China No.50730008Shanghai Science and Technology Grant No.0752nm015National Basic Research Program of China No.2006CB300406
文摘An approach was presented for synthesis of semiconducting single-walled carbon nanotubes(SWNTs) by sulfur(S) doping with the method of graphite arc discharge. Raman spectroscopy, UV-vis-NIR absorption spectroscopy and electronic properties measurements indicated the semconducting properties of the SWNTs samples. Simulant calculation indicated that S doping could induce convertion of metallic SWNTs into semiconducting ones. This strategy may pave a way for the direct synthesis of pure semiconducting SWNTs.
基金supported by the National Natural Science Foundation of China(Grant Nos.61727823,51873160)the joint research project of Health and Education Commission of Fujian Province(Grant No.2019-WJ-20).
文摘Semiconducting conjugated polymer nanoparticles(SPNs)represent an emerging class of phototheranostic materi-als with great promise for cancer treatment.In this report,low-bandgap electron donoracceptor(DA)-conjugated SPNs with sur-face cloaked by red blood cell membrane(RBCM)are developed for highly e ective photoacoustic imaging and photothermal therapy.The resulting RBCM-coated SPN(SPN@RBCM)displays remarkable near-infrared light absorption and good photosta-bility,as well as high photothermal conver-sion e ciency for photoacoustic imaging and photothermal therapy.Particularly,due to the small size(<5 nm),SPN@RBCM has the advantages of deep tumor penetration and rapid clearance from the body with no appreciable toxicity.The RBCM endows the SPNs with prolonged systematic circulation time,less reticuloendothelial system uptake and reduced immune-recognition,hence improving tumor accumulation after intravenous injection,which provides strong photoacoustic signals and exerts excellent photothermal therapeutic e ects.Thus,this work provides a valuable paradigm for safe and highly e cient tumor pho-toacoustic imaging and photothermal therapy for further clinical translation.
基金supported by the National Natural Science Foundation of China(Grant Nos.11804004 and 11647001)the China Postdoctoral Science Foundation(Grant No.2020M681973)Anhui Provincial Natural Science Foundation,China(Grant No.1708085QA11)。
文摘We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs).Under the condition of pump on-resonance and off-resonance,the absorption spectrum experiences the conversion from Fano resonance to Rabi-like splitting in different parametric regimes.In addition,the Fano resonances are accompanied by the rapid normal phase dispersion,which will indicate the coherent optical propagation.The results indicate that the group velocity index is tunable with controlling the interaction between the QD and MFs,which can reach the conversion between the fast-and slow-light.Fano resonance will be another method to detect MFs and our research may indicate prospective applications in quantum information processing based on the hybrid QD-SNW/SC devices.
基金Financial support from the Italian MIUR gh the PRIN Project 2015K7FZLH SMARTNESS "Solar driven chemistry:new materials for photo- and electro-catalysis"SINCHEM,a Joint Doctorate programme selected under the Erasmus Mundus Action 1 Programme (FPA 2013-0037)
文摘This perspective paper introduces the concept that nanocarbons and related materials such as carbon dots are an interesting intrinsic photocatalytic semiconducting material, and not only a modifier of the existing (semiconducting) materials to prepare hybrid materials. The semiconducting properties of the nanocarbons, and the possibility to have the band gap within the visible-light region through defect band engineering, introduction of light heteroatoms and control/manipulation of the curvature or surface functionalization are discussed. These materials are conceptually different from the 'classical' semiconducting photocatalysts, because semiconductor domains with tuneable characteristics are embedded in a conductive carbon matrix, with the presence of various functional groups (as C=0 groups) enhancing charge separation by trapping electrons. These nanocarbons open a range of new possibilities for photocatalysis both for energetic and environmental applications. The use of nanocarbons as quantum dots and photo luminescent materials was also analysed. (C) 2017 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights reserved.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51772087,11904094,51972106,and 11804089)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000)Natural Science Foundation of Hunan Province,China(Grant Nos.2019JJ50034 and 2019JJ50073).
文摘Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics.However,a layered two-dimensional form of these materials has been rarely reported.Here,we realize semiconducting Cu_(2)Se by direct selenization of Cu(111).Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure.X-ray photoelectron spectroscopy data reveal chemical composition of the sample,which is Cu_(2)Se.The observed moire pattern indicates a lattice mismatch between Cu_(2)Se and the underlying Cu(111)-√3×√3 surface.Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu_(2)Se exhibits a band gap of 0.78 eV.Furthermore,the calculated density of states and band structure demonstrate that the isolated Cu_(2)Se is a semiconductor with an indirect band gap of-0.8 eV,which agrees quite well with the experimental results.Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.
基金Supported by the National Basic Research Program of China under Grant Nos 2014CB921101,2014CB921103 and2013CB922103the National Natural Science Foundation of China under Grant Nos 11274003,61176088 and 61274102+1 种基金the Program for the New Century Excellent Talents in University under Grant No NCET-11-0240the PAPD Project,and the Fundamental Research Funds for the Central Universities
文摘Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on A u-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy （EDS）, x-ray photoelectron spectroscopy （XPS） and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe2＋ and Fe3＋, as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.
基金Supported by the National Natural Science Foundation of China under Grant No 11304378the Fundamental Research Funds for the Central Universities under Grant No 2017XKQY093
文摘The exciton states of semiconducting carbon nanotubes are calculated by a tight-binding model supplemented by Coulomb interactions under the combined effect of uniaxial strain and magnetic field. It is found that the excitation energies and absorption spectra of zigzag tubes（11,0） and（10,0） show opposite trends with the strain under the action of the magnetic field. For the（11,0） tube, the excitation energy decreases with the increasing uniaxial strain, with a splitting appearing in the absorption spectra. For the（10,0） tube, the variation trend firstly increases and then decreases, with a reversal point appearing in the absorption spectra. More interesting,at the reversal point the intensity of optical absorption is the largest because of the degeneracy of the two bands nearest to the Fermi Level, which is expected to be observed in the future experiment. The similar variation trend is also exhibited in the binding energy for the two kinds of semiconducting tubes.
文摘Semiconducting cuprous oxide films were electrodeposited onto conducting glasses coated with Indium Tin Oxide （ITO） using potentiostatic method. The electrodes were examined by means of X-Ray Diffraction （XRD） and X-ray Photoelectron Spectrum （XPS）. The results indicate that the prepared films are cubic Cu2O crystals, and annealing enhances the size and preferred orientation of the films. The photoelectric conversion mechanism of semiconducting ITO/Cu2O electrodes in 0.1 mol/L potassium sulfate （K2SO4） solution is further discussed by using Linear Sweep Voltammetry （LSV） method. The differences of photoelectric conversion of electrodes are reasonably deduced and proved through surfactant modifying, annealing or not, respectively.
基金supported by the National Key R&D Program of China(No.2020YFB2008604,2021YFB3202500)the National Natural Science Foundation of China(No.61874034)the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300)。
文摘Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analysis.Among various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble metals.This review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection limits.The key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured SMOs.In addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also discussed.Moreover,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in detail.Finally,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed.
基金supported by National Natural Science foundation of China (Grant Nos. 51371103 and 51231004)National Basic Research Program of China (Grant No. 2010CB832905)+1 种基金National Hi-tech (R&D) Project of China (Grant Nos. 2012AA03A706, 2013AA030801)the Research Project of Chinese Ministry of Education (No. 113007A)
文摘Enhancing ion conductance and controlling transport pathway in organic electrolyte could be used to modulate ionic kinetics to handle signals. In a Pt/Poly(3-hexylthiophene-2,5-diyl)/Polyethylene?Li CF3SO3/Pt hetero-junction, the electrolyte layer handled at high temperature showed nano-fiber microstructures accompanied with greatly improved salt solubility. Ions with high mobility were confined in the nano-fibrous channels leading to the semiconducting polymer layer,which is favorable for modulating dynamic doping at the semiconducting polymer/electrolyte interface by pulse frequency.Such a device realized synaptic-like frequency selectivity, i.e., depression at low frequency stimulation but potentiation at high-frequency stimulation.
基金Projected supported by the National Natural Science Foundation of China (Grant No. 61076113)the Natural Science Foundation of Guangdong Province,China (Grant No. 8451064101000257)the Research Grants Council (RGC) of Hong Kong Special Administrative Region (HKSAR),China (Grant No. HKU 7133/07E)
文摘Polymer thin-film transistors （PTFTs） based on poly（3-hexylthiophene） are fabricated by the spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7×10^3 at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low： only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.
基金Project supported by the Natural Science Foundation of Shanghai,China(Grant No.13ZR1456800)Ph.D. Programs Foundation of Ministry of Education of China(Grant No.20120073110093)+1 种基金the National Natural Science Foundation of China(Grant Nos.11274229,11474198,61274083,61334008,11274229,11474198,11204175)DOE under DE-FG02-04ER46159
文摘Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.
文摘A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.
基金Project supported by the National Natural Science Foundations of China(Grant Nos.51502244,51702271,U1631116,and 51372205)the National Key Research and Development Program of China(Grant Nos.2016YFF0101301 and 2016YFE0115200)+2 种基金the Fund of the State Key Laboratory of Solidification Processing in Northwestern Polytechnical University,China(Grant No.SKLSP201741)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.2016KJXX-09)the Fundamental Research Funds for the Central Universities,China(Grant No.3102015BJ(II)ZS014)
文摘Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques.Samples cut from the head(T04)and tail(W02)regions of a crystal ingot show distinct differences in Te inclusion distribution.Obvious difference is not observed in Fourier transform infrared(FTIR)spectra,UV-Vis-NIR transmittance spectra,and I-V measurements.However,carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC)measurements.Low temperature photoluminescence(PL)measurement presents sharp emission peaks of D^(0)X and A^(0)X,and relatively large peak of D^(0)X(or A^(0)X)/Dcomplex for T04,indicating a better crystalline quality.Thermally stimulated current(TSC)spectrum shows higher density of shallow point defects,i.e.,Cd vacancies,In^(+)_(Cd),etc.,in W02 sample,which could be responsible for the deterioration of electron mobility.
基金supported by the National Natural Science Foundation of China(Grant Nos.61504128,61504129,61274041,and 11275228)the National Basic Research Program of China(Grant No.2012CB619305)+1 种基金the National High Technology Research and Development Program of China(Grant Nos.2014AA032603,2014AA032609,and 2015AA010801)the Guangdong Provincial Scientific and Technologic Planning Program,China(Grant No.2014B010119002)
文摘The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane A1GaN films grown by metalorganic vapour phase epitaxy （MOVPE） are investigated. It is found that the aluminum content in A-plane A1GaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/Ⅲ ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the A1GaN films, especially nonpolar A1GaN epilayers.
基金supported by the Major Research Plan of National Natural Science Foundation of China (Grant No. 90606010)the Program for New Century Excellent Talents in University, China (Grant No. NCET-07-0278)+1 种基金the Hunan Provincial Natural Science Fund, China (Grant No. 08JJ1001)the Scientific Research Fund of Hunan Normal University, China (Grant No. 070623)
文摘Mo-doped SnO2 （MTO） nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.
基金Project supported by the National High Technology Research and Development Program of China (Grant No 2005A000200)the West Light Plan of China (Grant No 2005ZD01)the Xi’an Applied Materials Innovation Fund of China (Grant No XA-AM-200613)
文摘Low pressure metalorganic chemical vapour deposition （LP-MOCVD） growth and characteristics of InAsSb on （100） GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are obtained. The samples are studied by photoluminescence spectra, and the output is 3.17μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer. With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52 × 10^16 cm^-3.
