Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and ...Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.展开更多
In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ struct...In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.展开更多
The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value ...The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.展开更多
The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively im...The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current.展开更多
This paper stuides the structures of 4H SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristi...This paper stuides the structures of 4H SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ.cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.展开更多
In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field dist...In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.展开更多
This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H-SiC multi-floating junction Schottky barrier diode. Consid...This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H-SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ.cm2 and breakdown voltage increases 422 V with an additional floating junction for the given structure.展开更多
Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （...Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （I-V） characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope （AFM） shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.展开更多
A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB o...This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.展开更多
This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and rev...This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.展开更多
Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes o...Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.展开更多
4H-SiC junction barrier Schottky （JBS） diodes with a high-temperature annealed resistive termination extension （HARTE） are designed, fabricated and characterized in this work. The differential specific on-state re...4H-SiC junction barrier Schottky （JBS） diodes with a high-temperature annealed resistive termination extension （HARTE） are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm^2 with a total active area of 2.46× 10 ^-3 cm^2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 ℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9× 10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.展开更多
The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices sh...The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.展开更多
A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses pa...A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.展开更多
The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the...The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top cathode.The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)value.In addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage.With the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is designed.Therefore,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.展开更多
The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(...The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(3), their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_(2) O_(3) Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_(2) O_(3), work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_(2) O_(3) plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_(2) O_(3) SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_(2) O_(3) diode.展开更多
The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on ...The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.展开更多
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by u...Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.展开更多
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
基金Project supported by the National Natural Science Foundation of China(Grant No.60876050)the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology,China
文摘In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61006060)the 13115 Innovation Engineering of Shaanxi, China (Grant No. 2008ZDKG-30)the Key Laboratory Fund of Ministry of Education, China (Grant No. JY0100112501)
文摘The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.
基金Project supported by the National Key R&D Program of China(Grant No.2017YFB0404100)Science and Technology Planning Project of Guangdong Province,China(Grant No.2017B010112001)。
文摘The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current.
基金Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China
文摘This paper stuides the structures of 4H SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ.cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved.
基金Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration,China(Grant No.JCYJ20160226192639004)the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment,China(Grant No.JCYJ20170412153356899)the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT,China(Grant No.2017A050506002)
文摘In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
基金Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China
文摘This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H-SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ.cm2 and breakdown voltage increases 422 V with an additional floating junction for the given structure.
文摘Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （I-V） characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope （AFM） shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
基金supported by the National Natural Science Foundation of China(Grant No 60606022)the Xian Applied Materials Foundation of China(Grant No XA-AM-200702)the Advanced Research Foundation of China(Grant No 9140A08050508)
文摘This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.
基金supported by the 13115 Innovation Engineering of Shanxi (Grant No.2008ZDKG-30)
文摘This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018 YFB 2200500)the National Natural Science Foundation of China(Grant Nos.62050073,62090054,and 61975196)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC022)。
文摘Lateralβ-Ga_(2)O_(3)Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-typeβ-Ga_(2)O_(3)single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of4.7 mΩ·cm^(2).Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga_(2)O_(3)SBD has a tremendous potential for future power electronic applications.
基金supported by the National Natural Science Foundation of China (Grant No. 51102225)the Natural Science Foundation of Beijing City, China (Grant No. 4132076)the Youth Innovation Promotion Association, Chinese Academy of Sciences
文摘4H-SiC junction barrier Schottky （JBS） diodes with a high-temperature annealed resistive termination extension （HARTE） are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm^2 with a total active area of 2.46× 10 ^-3 cm^2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 ℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9× 10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.
基金the National Natural Science Foundation of China(Grant Nos.12035019,11690041,and 12075290)China National Postdoctoral Program for Innovative Talents(Grant No.BX20200340)+1 种基金China Postdoctoral Science Foundation(Grant No.2020M673539)CAS"Light of West China"Program,and the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)(Grant No.2020412).
文摘The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
基金Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001)the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886)。
文摘A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the Schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.
基金Project supported by the Key Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001)the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886)the Open Project of State Key Laboratory of Superhard Materials,Jilin Province,China(Grant No.202314)。
文摘The trench diamond junction barrier Schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco simulation.Comparing with the conventional trench JBS diode,Schottky contact areas are introduced on the sidewall of the trench beside the top cathode.The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)value.In addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage.With the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is designed.Therefore,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61925110, 61821091, 62004184, 62004186, and 51961145110)the National Key R&D Program of China (Grant Nos. 2018YFB0406504 and 2016YFA0201803)+4 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences (CAS)(Grant No. XDB44000000)the Key Research Program of Frontier Sciences of CAS (Grant No. QYZDB-SSW-JSC048)the Fundamental Research Funds for the Central Universities,China (Grant Nos. WK2100000014 and WK2100000010)the Key-Area Research and Development Program of Guangdong Province,China (Grant No. 2020B010174002)the Opening Project of Key Laboratory of Microelectronics Devices&Integration Technology in Institute of Microelectronics of CAS and Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘The ultra-wide bandgap semiconductor β gallium oxide(β-Ga_(2) O_(3)) gives promise to low conduction loss and high power for electronic devices. However, due to the natural poor thermal conductivity of β-Ga_(2) O_(3), their power devices suffer from serious self-heating effect. To overcome this problem, we emphasize on the effect of device structure on peak temperature in β-Ga_(2) O_(3) Schottky barrier diodes(SBDs) using TCAD simulation and experiment. The SBD topologies including crystal orientation of β-Ga_(2) O_(3), work function of Schottky metal, anode area, and thickness, were simulated in TCAD, showing that the thickness of β-Ga_(2) O_(3) plays a key role in reducing the peak temperature of diodes. Hence, we fabricated β-Ga_(2) O_(3) SBDs with three different thickness epitaxial layers and five different thickness substrates. The surface temperature of the diodes was measured using an infrared thermal imaging camera. The experimental results are consistent with the simulation results. Thus, our results provide a new thermal management strategy for high power β-Ga_(2) O_(3) diode.
基金Supported by the National Key Research and Development Plan under Grant No 2017YFB0403000the Fundamental Research Funds for the Central Universities under Grant No JB181110
文摘The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175℃, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with Ti N anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.
文摘Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.
