Surface-enhanced Raman Spectroscopy(SERS)is a nondestructive technique for rapid detection of analytes even at the single-molecule level.However,highly sensitive and reliable SERS substrates are mostly fabricated with...Surface-enhanced Raman Spectroscopy(SERS)is a nondestructive technique for rapid detection of analytes even at the single-molecule level.However,highly sensitive and reliable SERS substrates are mostly fabricated with complex nanofabrication techniques,greatly restricting their practical applications.A convenient electrochemical method for transforming the surface of commercial gold wires/foils into silver-alloyed nanostructures is demonstrated in this report.Au substrates are treated with repetitive anodic and cathodic bias in an electrolyte of thiourea,in a one-pot one-step manner.X-rays absorption fine structure(XAFS)spectroscopy confirms that the AuAg alloy is induced at the surface.The unique AuAg alloyed surface nanostructures are particularly advantageous when served as SERS substrates,enabling a remarkably sensitive detection of Rhodamine B(a detection limit of 10^(-14)M,and uniform strong response throughout the substrates at 10^(-12)M).展开更多
The unexpected scaling phenomena have resulted in significant damages to the oil and gas industries,leading to issues such as heat exchanger failures and pipeline clogging.It is of practical and fundamental importance...The unexpected scaling phenomena have resulted in significant damages to the oil and gas industries,leading to issues such as heat exchanger failures and pipeline clogging.It is of practical and fundamental importance to understand the scaling mechanisms and develop efficient anti-scaling strategies.However,the underlying surface interaction mechanisms of scalants(e.g.,calcite)with various substrates are still not fully understood.In this work,the colloidal probe atomic force microscopy(AFM)technique has been applied to directly quantify the surface forces between calcite particles and different metallic substrates,including carbon steel(CR1018),low alloy steel(4140),stainless steel(SS304)and tungsten carbide,under different water chemistries(i.e.,salinity and pH).Measured force profiles revealed that the attractive van der Waals(VDW)interaction contributed to the attachment of the calcium carbonate particles on substrate surfaces,while the repulsive electric double layer(EDL)interactions could inhibit the attachment behaviors.High salinity and acidic p H conditions of aqueous solutions could weaken the EDL repulsion and promote the attachment behavior.The adhesion of calcite particles with CR1018 and4140 substrates was much stronger than that with SS304 and tungsten carbide substrates.The bulk scaling tests in aqueous solutions from an industrial oil production process showed that much more severe scaling behaviors of calcite was detected on CR1018 and 4140 than those on SS304 and tungsten carbide,which agreed with surface force measurement results.Besides,high salinity and acidic p H can significantly enhance the scaling phenomena.This work provides fundamental insights into the scaling mechanisms of calcite at the nanoscale with practical implications for the selection of suitable antiscaling materials in petroleum industries.展开更多
Near-field radiative heat transfer(NFRHT)has the potential to exceed the blackbody limit by several orders of magnitude,offering significant opportunities for energy harvesting.In this study,we have examined the NFRHT...Near-field radiative heat transfer(NFRHT)has the potential to exceed the blackbody limit by several orders of magnitude,offering significant opportunities for energy harvesting.In this study,we have examined the NFRHT between two borophene sheets through the calculation of heat transfer coefficient(HTC).Due to the tunneling of evanescent waves,borophene sheet allows for enhanced heat flux and adjustable NFRHT by varying its electron density and electron relaxation time.Additionally,the near field coupling is further examined when the borophene is deposited on dielectric or lossy substrates.The maximum HTC is closely related to the real part of the dielectric substrate.As a case study,the HTCs on the lossy substrate of MoO_(3),ZnSe,and SiC are calculated for comparisons.Our results indicate that MoO_(3)is the optimal substrate to get the enhanced energy transfer coefficient.It results in a remarkable value of 1737 times higher than the blackbody limit owing to the enhanced photon tunneling probability.Thus,our study reveals the effect of substrate on the HTC between borophene sheets and provides a theoretical guidance for the design of near-field thermal radiation devices.展开更多
Phonon polaritons(PhPs)exhibit directional in-plane propagation and ultralow losses in van der Waals(vdW)crystals,offering new possibilities for controlling the flow of light at the nanoscale.However,these PhPs,includ...Phonon polaritons(PhPs)exhibit directional in-plane propagation and ultralow losses in van der Waals(vdW)crystals,offering new possibilities for controlling the flow of light at the nanoscale.However,these PhPs,including their directional propagation,are inherently determined by the anisotropic crystal structure of the host materials.Although in-plane anisotropic PhPs can be manipulated by twisting engineering,such as twisting individual vdW slabs,dynamically adjusting their propagation presents a significant challenge.The limited application of the twisted bilayer structure in bare films further restricts its usage.In this study,we present a technique in which anisotropic PhPs supported by bare biaxial vdW slabs can be actively tuned by modifying their local dielectric environment.Excitingly,we predict that the iso-frequency contour of PhPs can be reoriented to enable propagation along forbidden directions when the crystal is placed on a substrate with a moderate negative permittivity.Besides,we systematically investigate the impact of polaritonic coupling on near-field radiative heat transfer(NFRHT)between heterostructures integrated with different substrates that have negative permittivity.Our main findings reveal that through the analysis of dispersion contour and photon transmission coefficient,the excitation and reorientation of the fundamental mode facilitate increased photon tunneling,thereby enhancing heat transfer between heterostructures.Conversely,the annihilation of the fundamental mode hinders heat transfer.Furthermore,we find the enhancement or suppression of radiative energy transport depends on the relative magnitude of the slab thickness and the vacuum gap width.Finally,the effect of negative permittivity substrates on NFRHT along the[001]crystalline direction ofα-MoO3 is considered.The spectral band where the excited fundamental mode resulting from the negative permittivity substrates is shifted to the first Reststrahlen Band(RB 1)ofα-MoO_(3) and is widened,resulting in more significant enhancement of heat flux from RB 1.We anticipate our results will motivate new direction for dynamical tunability of the PhPs in photonic devices.展开更多
We report the epitaxial growth of single-crystalline Cd Te（100） thin films on Ga As（100） substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three ...We report the epitaxial growth of single-crystalline Cd Te（100） thin films on Ga As（100） substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent Cd Te growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the（100） orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.展开更多
ZnO films on R-sapphire substrates are prepared and characterized by x-ray diffraction and scanning electron microscopy, which indicate that the thin films are well crystallized with （1120） texture. Love wave and Ra...ZnO films on R-sapphire substrates are prepared and characterized by x-ray diffraction and scanning electron microscopy, which indicate that the thin films are well crystallized with （1120） texture. Love wave and Rayleigh wave are used for fabrications of humidity sensors, which are excited in [1100] and [0001] directions of the （1120） ZnO piezoelectric films, respectively. The experimental results show that both kinds of sensors have good humidity response and repeatability, and the performances of the Love wave sensors are better than those of the Rayleigh wave sensors at room temperature. Moreover, the theoretical calculations of the mass sensitivity of the sensors are a/so carried out and the calculated results are in good agreement with the experimental measurements.展开更多
Two-mode converters at 1.3μm, aiming at applications in mode-division multiplexing in Ethernet systems, are proposed and experimentally demonstrated. Based on multimode interference couplers, the two-mode converters ...Two-mode converters at 1.3μm, aiming at applications in mode-division multiplexing in Ethernet systems, are proposed and experimentally demonstrated. Based on multimode interference couplers, the two-mode converters with 50% and 66% mode conversion efficiencies are designed and fabricated on InP substrates. AIode conver- sion from the fundamental mode （TEo） to the first order mode （TE1） is successfully demonstrated within the wavelength range of 1280-1320nm. The 1.3-μm mode converters should be important devices in mode-division multiplexing systems in Ethernet systems.展开更多
Effect of mechanical stress on magnetic properties of an exchange-biased ferromagnetic/antiferromagnetic bilayer deposited on a flexible substrate is investigated. The hysteresis loops with different magnitudes and or...Effect of mechanical stress on magnetic properties of an exchange-biased ferromagnetic/antiferromagnetic bilayer deposited on a flexible substrate is investigated. The hysteresis loops with different magnitudes and orientations of the stress can be classified into three types. The corresponding physical conditions for each type of the loop are deduced based on the principle of minimal energy. The equation of the critical stress is derived, which can judge whether the loops show hysteresis or not. Numerical calculations suggest that except for the magnitude of the mechanical stress, the relative orientation of the stress is also an important factor to tune the exchange bias effect.展开更多
Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent ex...Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent example is the single layer Sr2IrO4, in which superconductivity has been proposed under electron doping.However, the synthesis of Sr2IrO4 high quality thin films has been a huge challenge due to the easy formation of impurities associated with different numbers of SrO layers.Thus techniques to optimize the growth of pure phase Sr2IrO4 are urgently required.Here we report the deposition of high quality Sr2IrO4 thin films on both insulating SrTiO3 and conducting SrTiO3:Nb substrates using pulsed laser deposition assisted with reflective high-energy electron diffraction.The optimal deposition temperature of Sr2IrO4 epitaxial films on SrTiO3:Nb substrates is about 90℃ lower than that on SrTiO3 substrates.The electrical transports of high quality Sr2IrO4 films are measured, which follow the three-dimensional Mott variable-range hopping model.The film magnetizations are measured, which show weak ferromagnetism below ~240 K with a saturation magnetization of~ 0.2 μB/Ir at 5 K.This study provides applicable methods to prepare high quality 5 d Sr2IrO4 epitaxial films, which could be extended to other Ruddlesden–Popper phases and potentially help the future study of exotic quantum phenomena in them.展开更多
Single-phase Ni_(0.92)Mn_(1.08) As films with strained C_(1b) symmetry are grown on GaAs(001) substrates. In addition,a preferred epitaxial configuration of(110)-orientated Ni_(0.92)Mn_(1.08) As on(001)-orientated GaA...Single-phase Ni_(0.92)Mn_(1.08) As films with strained C_(1b) symmetry are grown on GaAs(001) substrates. In addition,a preferred epitaxial configuration of(110)-orientated Ni_(0.92)Mn_(1.08) As on(001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be ~370℃. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.展开更多
Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flex...Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2 Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained fexible films suitable for electronic applications.展开更多
Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect tran...Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors （GFETs） fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density I DS, improved transconductance g m, reduced sheet resistance lion, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.展开更多
ZnTe, CdTe, and the ternary alloy CdZnTe are important semiconductor materials used widely for the detection of an important range of electromagnetic radiation as gamma ray and X-ray. Although, recently these material...ZnTe, CdTe, and the ternary alloy CdZnTe are important semiconductor materials used widely for the detection of an important range of electromagnetic radiation as gamma ray and X-ray. Although, recently these materials have acquired renewed importance due to the new explored nanolayer properties of modern devices. In addition, as shown in this work they can be grown using uncomplicated synthesis techniques based on the deposition in vapour phase of the elemental precursors. This work presents the results obtained from the deposition of nanolayers of these materials using the precursor vapour on GaAs and GaSb (001) substrates. This growth technique, extensively known as atomic layer deposition (ALD), allows the layers growth with nanometric dimension. The main results presented in this work are the used growth parameters and the results of the structural characterization of the layers by the means of Raman spectroscopy measurements. Raman scattering shows the peak corresponding to longitudinal optical (LO)-ZnTe, which is weak and slightly redshift in comparison with that reported for the ZnTe bulk at 210 cm^-1. For the case of the CdTe nanolayer, Raman spectra presented the LO-CdTe peak, which is indicative of the successful growth of the layer. Its weak and slightly redshift in comparison with that reported for the CdTe bulk can be related with the nanometric characteristic of this layer. The performed high-resolution X-ray diffraction (HR-XRD) measurement allows to study some important characteristics such as the crystallinity of the grown layer. In addition, the HR-XRD measurement suggests that the crystalline quality has dependence on the growth temperature.展开更多
Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate t...Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.展开更多
Epitaxial ferroelectric one direction over the thin fihns on single-crystal substrates generally show a preferred domain orientation in other in demonstration of a poor polarization retention. This behavior will affec...Epitaxial ferroelectric one direction over the thin fihns on single-crystal substrates generally show a preferred domain orientation in other in demonstration of a poor polarization retention. This behavior will affect their application in nonvolatile ferroelectric random access memories where bipolar polarization states are used to store the logic 0 and 1 data. Here the retention characteristics of BiFe03 thin films with Srftu03 bottom electrodes on both GdSc03 （110） and SrTiO3 （100） substrates are studied and compared, and the results of piezoresponse force microscopy provide a long time retention property of the films on two substrates. It is found that bismuth ferrite thin films grown on GdScO3 substrates show no preferred domain variants in comparison with the preferred downward polarization orientation toward bottom electrodes on SrTi03 substrates. Tile retention test from a positive-up domain to a negative-down domain using a signal generator and an oscilloscope coincidentally shows bistable polarization states on the GdSeOa substrate over a measuring time of 500s, unlike the preferred domain orientation on SrTi03, where more than 65~o of upward domains disappear after 1 s. In addition, different sizes of domains have been written and read by using the scanning tip of piezoresponse force microscopy, where the polarization can stabilize over one month. This study paves one route to improve the polarization retention property through the optimization of the lattice-mismatched stresses between films and substrates.展开更多
The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantu...The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.展开更多
The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the ...The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.展开更多
The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.展开更多
Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostruct...Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.展开更多
CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated....CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.展开更多
基金supported by Shenzhen-Hong Kong Science and Technology Innovation Cooperation Zone Shenzhen Park (Project HZQBKCZYB-2020030)National Key R&D Program of China (Project 2017YFA0204403)+2 种基金the National Natural Science Foundation of China (Project 51590892)the Major Program of Changsha Science and Technology (Project kh2003023)the Innovation and Technology Commission of HKSAR through Hong Kong Branch of National Precious Metals Material Engineering Research Centre,and the City University of Hong Kong (Project 9667207)。
文摘Surface-enhanced Raman Spectroscopy(SERS)is a nondestructive technique for rapid detection of analytes even at the single-molecule level.However,highly sensitive and reliable SERS substrates are mostly fabricated with complex nanofabrication techniques,greatly restricting their practical applications.A convenient electrochemical method for transforming the surface of commercial gold wires/foils into silver-alloyed nanostructures is demonstrated in this report.Au substrates are treated with repetitive anodic and cathodic bias in an electrolyte of thiourea,in a one-pot one-step manner.X-rays absorption fine structure(XAFS)spectroscopy confirms that the AuAg alloy is induced at the surface.The unique AuAg alloyed surface nanostructures are particularly advantageous when served as SERS substrates,enabling a remarkably sensitive detection of Rhodamine B(a detection limit of 10^(-14)M,and uniform strong response throughout the substrates at 10^(-12)M).
基金support from Science Foundation of China University of Petroleum,Beijing (No.2462023QNXZ018)the Natural Sciences and Engineering Research Council of Canada (NSERC)+2 种基金Canada Foundation for Innovation (CFI)the Research Capacity Program (RCP)of Albertathe Canada Research Chairs Program。
文摘The unexpected scaling phenomena have resulted in significant damages to the oil and gas industries,leading to issues such as heat exchanger failures and pipeline clogging.It is of practical and fundamental importance to understand the scaling mechanisms and develop efficient anti-scaling strategies.However,the underlying surface interaction mechanisms of scalants(e.g.,calcite)with various substrates are still not fully understood.In this work,the colloidal probe atomic force microscopy(AFM)technique has been applied to directly quantify the surface forces between calcite particles and different metallic substrates,including carbon steel(CR1018),low alloy steel(4140),stainless steel(SS304)and tungsten carbide,under different water chemistries(i.e.,salinity and pH).Measured force profiles revealed that the attractive van der Waals(VDW)interaction contributed to the attachment of the calcium carbonate particles on substrate surfaces,while the repulsive electric double layer(EDL)interactions could inhibit the attachment behaviors.High salinity and acidic p H conditions of aqueous solutions could weaken the EDL repulsion and promote the attachment behavior.The adhesion of calcite particles with CR1018 and4140 substrates was much stronger than that with SS304 and tungsten carbide substrates.The bulk scaling tests in aqueous solutions from an industrial oil production process showed that much more severe scaling behaviors of calcite was detected on CR1018 and 4140 than those on SS304 and tungsten carbide,which agreed with surface force measurement results.Besides,high salinity and acidic p H can significantly enhance the scaling phenomena.This work provides fundamental insights into the scaling mechanisms of calcite at the nanoscale with practical implications for the selection of suitable antiscaling materials in petroleum industries.
基金Project supported by the Natural Science Foundation of Henan Province,China(Grant No.232102231023)。
文摘Near-field radiative heat transfer(NFRHT)has the potential to exceed the blackbody limit by several orders of magnitude,offering significant opportunities for energy harvesting.In this study,we have examined the NFRHT between two borophene sheets through the calculation of heat transfer coefficient(HTC).Due to the tunneling of evanescent waves,borophene sheet allows for enhanced heat flux and adjustable NFRHT by varying its electron density and electron relaxation time.Additionally,the near field coupling is further examined when the borophene is deposited on dielectric or lossy substrates.The maximum HTC is closely related to the real part of the dielectric substrate.As a case study,the HTCs on the lossy substrate of MoO_(3),ZnSe,and SiC are calculated for comparisons.Our results indicate that MoO_(3)is the optimal substrate to get the enhanced energy transfer coefficient.It results in a remarkable value of 1737 times higher than the blackbody limit owing to the enhanced photon tunneling probability.Thus,our study reveals the effect of substrate on the HTC between borophene sheets and provides a theoretical guidance for the design of near-field thermal radiation devices.
基金supported by the National Natural Science Foundation of China(Nos.52106099 and 51576004)the Natural Science Foundation of Shandong Province(No.ZR2022YQ57)the Taishan Scholars Program.
文摘Phonon polaritons(PhPs)exhibit directional in-plane propagation and ultralow losses in van der Waals(vdW)crystals,offering new possibilities for controlling the flow of light at the nanoscale.However,these PhPs,including their directional propagation,are inherently determined by the anisotropic crystal structure of the host materials.Although in-plane anisotropic PhPs can be manipulated by twisting engineering,such as twisting individual vdW slabs,dynamically adjusting their propagation presents a significant challenge.The limited application of the twisted bilayer structure in bare films further restricts its usage.In this study,we present a technique in which anisotropic PhPs supported by bare biaxial vdW slabs can be actively tuned by modifying their local dielectric environment.Excitingly,we predict that the iso-frequency contour of PhPs can be reoriented to enable propagation along forbidden directions when the crystal is placed on a substrate with a moderate negative permittivity.Besides,we systematically investigate the impact of polaritonic coupling on near-field radiative heat transfer(NFRHT)between heterostructures integrated with different substrates that have negative permittivity.Our main findings reveal that through the analysis of dispersion contour and photon transmission coefficient,the excitation and reorientation of the fundamental mode facilitate increased photon tunneling,thereby enhancing heat transfer between heterostructures.Conversely,the annihilation of the fundamental mode hinders heat transfer.Furthermore,we find the enhancement or suppression of radiative energy transport depends on the relative magnitude of the slab thickness and the vacuum gap width.Finally,the effect of negative permittivity substrates on NFRHT along the[001]crystalline direction ofα-MoO3 is considered.The spectral band where the excited fundamental mode resulting from the negative permittivity substrates is shifted to the first Reststrahlen Band(RB 1)ofα-MoO_(3) and is widened,resulting in more significant enhancement of heat flux from RB 1.We anticipate our results will motivate new direction for dynamical tunability of the PhPs in photonic devices.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2017YFB0405704 and 2017YFA0305400the 1000-Young Talent Program of Chinathe Shanghai Sailing Program under Grant No 17YF1429200
文摘We report the epitaxial growth of single-crystalline Cd Te（100） thin films on Ga As（100） substrates using molecular beam epitaxy. By controlling the substrate pre-heated temperature with adjustable Te flux, three different reconstructed surfaces are realized, and their influence on the subsequent Cd Te growth is investigated. More importantly, we find that both the presence of a thin native oxide layer and the formation of Ga-As-Te bonds at the interface enable the growth along the（100） orientation and help to reduce the threading dislocations and other defects. Our results provide new opportunities for compound semiconductor heterogeneous growth via interfacial engineering.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174142,11304160 and 11404147the National Basic Research Program of China under Grant No 2012CB921504+2 种基金the PAPD Projectthe Natural Science Foundation of Jiangsu Higher Education Institutions of China under Grant No 13KJB140008the Foundation of Nanjing University of Posts and Telecommunications under Grant No NY213018
文摘ZnO films on R-sapphire substrates are prepared and characterized by x-ray diffraction and scanning electron microscopy, which indicate that the thin films are well crystallized with （1120） texture. Love wave and Rayleigh wave are used for fabrications of humidity sensors, which are excited in [1100] and [0001] directions of the （1120） ZnO piezoelectric films, respectively. The experimental results show that both kinds of sensors have good humidity response and repeatability, and the performances of the Love wave sensors are better than those of the Rayleigh wave sensors at room temperature. Moreover, the theoretical calculations of the mass sensitivity of the sensors are a/so carried out and the calculated results are in good agreement with the experimental measurements.
基金Supported by the National Basic Research Program of China under Grant No 2014CB340102the National Natural Science Foundation of China under Grant Nos 61474111 and 61274046
文摘Two-mode converters at 1.3μm, aiming at applications in mode-division multiplexing in Ethernet systems, are proposed and experimentally demonstrated. Based on multimode interference couplers, the two-mode converters with 50% and 66% mode conversion efficiencies are designed and fabricated on InP substrates. AIode conver- sion from the fundamental mode （TEo） to the first order mode （TE1） is successfully demonstrated within the wavelength range of 1280-1320nm. The 1.3-μm mode converters should be important devices in mode-division multiplexing systems in Ethernet systems.
基金Supported by the Youth Science Foundation of Shanxi Province under Grant No 2013021010-3the National Natural Science Foundation of China under Grant Nos 61434002 and 11404202
文摘Effect of mechanical stress on magnetic properties of an exchange-biased ferromagnetic/antiferromagnetic bilayer deposited on a flexible substrate is investigated. The hysteresis loops with different magnitudes and orientations of the stress can be classified into three types. The corresponding physical conditions for each type of the loop are deduced based on the principle of minimal energy. The equation of the critical stress is derived, which can judge whether the loops show hysteresis or not. Numerical calculations suggest that except for the magnitude of the mechanical stress, the relative orientation of the stress is also an important factor to tune the exchange bias effect.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51627901 and 11574287)the National Key Research and Development Program of China(Grant No.2016YFA0401004)+1 种基金Hefei Science Center-Chinese Academy of Sciences(Grant No.2016HSC-IU004)the support of the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2016389)
文摘Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent example is the single layer Sr2IrO4, in which superconductivity has been proposed under electron doping.However, the synthesis of Sr2IrO4 high quality thin films has been a huge challenge due to the easy formation of impurities associated with different numbers of SrO layers.Thus techniques to optimize the growth of pure phase Sr2IrO4 are urgently required.Here we report the deposition of high quality Sr2IrO4 thin films on both insulating SrTiO3 and conducting SrTiO3:Nb substrates using pulsed laser deposition assisted with reflective high-energy electron diffraction.The optimal deposition temperature of Sr2IrO4 epitaxial films on SrTiO3:Nb substrates is about 90℃ lower than that on SrTiO3 substrates.The electrical transports of high quality Sr2IrO4 films are measured, which follow the three-dimensional Mott variable-range hopping model.The film magnetizations are measured, which show weak ferromagnetism below ~240 K with a saturation magnetization of~ 0.2 μB/Ir at 5 K.This study provides applicable methods to prepare high quality 5 d Sr2IrO4 epitaxial films, which could be extended to other Ruddlesden–Popper phases and potentially help the future study of exotic quantum phenomena in them.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405701the National Natural Science Foundation of China under Grant Nos U1632264 and 11706374the Key Research Project of Frontier Science of Chinese Academy of Science under Grant No QYZDY-SSW-JSC015
文摘Single-phase Ni_(0.92)Mn_(1.08) As films with strained C_(1b) symmetry are grown on GaAs(001) substrates. In addition,a preferred epitaxial configuration of(110)-orientated Ni_(0.92)Mn_(1.08) As on(001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be ~370℃. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.
基金Supported by the National Basic Research Program of China under Grant No 2012CB619200the National Natural Science Foundation of China under Grant Nos 61290304,11074265 and 11174307+1 种基金the Natural Science Foundation of Shanghai under Grant No 16ZR1441200the Frontier Science Research Project(Key Programs)of Chinese Academy of Sciences under Grant No QYZDJ-SSW-SLH018
文摘Recently, great efforts have been made in the fabrication of arbitrary warped devices to satisfy the requirement of wearable and lightweight electronic products. Direct growth of high crystalline quality films on flexible substrates is the most desirable method to fabricate flexible devices owing to the advantage of simple and compatible preparation technology with current semiconductor devices, while it is a very challenging work, and usually amorphous, polycrystalline or discontinuous single crystalline films are achieved. Here we demonstrate the direct growth of high-quality Bi2 Te3 single crystalline films on flexible polyimide substrates by the modified hot wall epitaxy technique. Experimental results reveal that adjacent crystallites are coherently coalesced to form a continuous film, although amounts of disoriented crystallites are generated due to fast growth rate. By inserting a quartz filter into the growth tube, the number density of disoriented crystallites is effectively reduced owing to the improved spiral interaction. Furthermore, flexible Bi2 Te3 photoconductors are fabricated and exhibit strong near-infrared photoconductive response under different degrees of bending, which also confirms the obtained fexible films suitable for electronic applications.
基金Supported by the National Natural Science Foundation of China under Grant No 61306006
文摘Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors （GFETs） fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density I DS, improved transconductance g m, reduced sheet resistance lion, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.
文摘ZnTe, CdTe, and the ternary alloy CdZnTe are important semiconductor materials used widely for the detection of an important range of electromagnetic radiation as gamma ray and X-ray. Although, recently these materials have acquired renewed importance due to the new explored nanolayer properties of modern devices. In addition, as shown in this work they can be grown using uncomplicated synthesis techniques based on the deposition in vapour phase of the elemental precursors. This work presents the results obtained from the deposition of nanolayers of these materials using the precursor vapour on GaAs and GaSb (001) substrates. This growth technique, extensively known as atomic layer deposition (ALD), allows the layers growth with nanometric dimension. The main results presented in this work are the used growth parameters and the results of the structural characterization of the layers by the means of Raman spectroscopy measurements. Raman scattering shows the peak corresponding to longitudinal optical (LO)-ZnTe, which is weak and slightly redshift in comparison with that reported for the ZnTe bulk at 210 cm^-1. For the case of the CdTe nanolayer, Raman spectra presented the LO-CdTe peak, which is indicative of the successful growth of the layer. Its weak and slightly redshift in comparison with that reported for the CdTe bulk can be related with the nanometric characteristic of this layer. The performed high-resolution X-ray diffraction (HR-XRD) measurement allows to study some important characteristics such as the crystallinity of the grown layer. In addition, the HR-XRD measurement suggests that the crystalline quality has dependence on the growth temperature.
基金Supported by the National Basic Research Program of China under Grant Nos 2011CB921904 and 2012CB927402the National Natural Science Foundation of China under Grant Nos 11074142 and 11021464the Key Project of the Ministry of Education of China under Grant No 309003
文摘Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.
基金Supported by the National Basic Research Program of China under Grant No 2014CB921004the National Natural Science Foundation of China under Grant No 61225020
文摘Epitaxial ferroelectric one direction over the thin fihns on single-crystal substrates generally show a preferred domain orientation in other in demonstration of a poor polarization retention. This behavior will affect their application in nonvolatile ferroelectric random access memories where bipolar polarization states are used to store the logic 0 and 1 data. Here the retention characteristics of BiFe03 thin films with Srftu03 bottom electrodes on both GdSc03 （110） and SrTiO3 （100） substrates are studied and compared, and the results of piezoresponse force microscopy provide a long time retention property of the films on two substrates. It is found that bismuth ferrite thin films grown on GdScO3 substrates show no preferred domain variants in comparison with the preferred downward polarization orientation toward bottom electrodes on SrTi03 substrates. Tile retention test from a positive-up domain to a negative-down domain using a signal generator and an oscilloscope coincidentally shows bistable polarization states on the GdSeOa substrate over a measuring time of 500s, unlike the preferred domain orientation on SrTi03, where more than 65~o of upward domains disappear after 1 s. In addition, different sizes of domains have been written and read by using the scanning tip of piezoresponse force microscopy, where the polarization can stabilize over one month. This study paves one route to improve the polarization retention property through the optimization of the lattice-mismatched stresses between films and substrates.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11434010,11574356 and 11504415the Funds from the Royal Society,the Defense Science Technology Laboratory and UK Engineering and Physics Research Council
文摘The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.
基金Supported by the Science and Technology Planning Projects of Guangdong Province under Grant Nos 2014B050505020,2015B010114007 and 2014B090904045the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20134407110008+1 种基金the Guangzhou Science and Technology Project of Guangdong Province under Grant No 2016201604030027the Zhongshan Science and Technology Project of Guangdong Province under Grant No 2013B3FC0003
文摘The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108the Fundamental Research Funds for the Central Universities under Grant No JB141101the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01
文摘The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002the National Natural Sciences Foundation of China under Grant Nos 61574108,61334002,61474086 and 61306017
文摘Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.
文摘CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.
