期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
SRAM型FPGA单粒子辐照试验系统技术研究 被引量:6
1
作者 孙雷 段哲民 +1 位作者 刘增荣 陈雷 《计算机工程与应用》 CSCD 2014年第1期49-52,共4页
单粒子辐射效应严重制约FPGA的空间应用,为提高FPGA在辐射环境中的可靠性,深入研究抗辐射加固FPGA单粒子效应评估方法,设计优化单粒子效应评估方案,开发相应的评估系统,提出基于SRAM时序修正的码流存储比较技术和基于SelectMAP端口配置... 单粒子辐射效应严重制约FPGA的空间应用,为提高FPGA在辐射环境中的可靠性,深入研究抗辐射加固FPGA单粒子效应评估方法,设计优化单粒子效应评估方案,开发相应的评估系统,提出基于SRAM时序修正的码流存储比较技术和基于SelectMAP端口配置回读技术。借助国内高能量大注量率的辐照试验环境,完成FPGA单粒子翻转(SEU)、单粒子闩锁(SEL)和单粒子功能中断(SEFI)等单粒子效应的检测,试验结果表明,该方法可以科学有效地对SRAM型FPGA抗单粒子辐射性能进行评估。 展开更多
关键词 现场可编程门阵列(FPGA) 空间辐射 单粒子效应 回读 静态随机存储器(sram) Field PROGRAMMABLE Gate Array(FPGA) Static Random Access memory(sram)
在线阅读 下载PDF
Impacts of NBTI/PBTI on power gated SRAM
2
作者 黄平 邢座程 《Journal of Central South University》 SCIE EI CAS 2013年第5期1298-1306,共9页
A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power ga... A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 106 s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 106 s working time compared with previous work. 展开更多
关键词 negative bias temperature instability (NBTI) positive bias temperature instability (PBTI) static random access memorysram power gating
在线阅读 下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部