A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introduc...A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.展开更多
The memristor is a kind of non-linear element with memory function,which can be applied to chaotic systems to increase signal randomness and complexity.In this paper,a new four-dimensional hyper-chaotic system is desi...The memristor is a kind of non-linear element with memory function,which can be applied to chaotic systems to increase signal randomness and complexity.In this paper,a new four-dimensional hyper-chaotic system is designed based on a flux controlled memristor model,which can generate complex chaotic attractors.The basic dynamic theory analysis and numerical simulations of the system,such as the stability of equilibrium points,the Lyapunov exponents and dimension,Poincare maps,the power spectrum,and the waveform graph prove that it has rich dynamic behaviors.Then,the circuit implementation of this system is established.The consistency of simulation program with integrated circuit emphasis(SPICE)simulation and numerical analysis proves the ability to generate chaos.Finally,a new image encryption scheme is designed by using the memristor-based hyper-chaotic system proposed in this paper.The scheme involves a total of two encryptions.By using different security analysis factors,the proposed algorithm is compared with other image encryption schemes,including correlation analysis,information entropy,etc.The results show that the proposed image encryption scheme has a large key space and presents a better encryption effect.展开更多
A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor(IGBT)devices using SPICE simulators by extending the lumped-charge method.The new method assumes local quasi...A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor(IGBT)devices using SPICE simulators by extending the lumped-charge method.The new method assumes local quasi-neutrality in the undepleted N^(-)base region and uses the total collector current,the nodal hole density and voltage as the basic quantities.In SPICE implementation,it makes clear and accurate definitions of three kinds of nodes—the carrier density nodes,the voltage nodes and the current generator nodes—in the undepleted N^(-)base region.It uses central finite difference to approximate electron and hole current generators and sets up the current continuity equation in a control volume for every carrier density node in the undepleted N^(-)base region.It is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient processes.We use this method to simulate IGBT devices in SPICE simulators and get a good agreement with technology computer-aided design simulations.展开更多
文摘A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.
基金Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB1306600)the National Natural Science Foundation of China (Grant Nos. 62076207 and 62076208)the Fundamental Science and Advanced Technology Research Foundation of Chongqing, China (Grant Nos. cstc2017jcyj BX0050)
文摘The memristor is a kind of non-linear element with memory function,which can be applied to chaotic systems to increase signal randomness and complexity.In this paper,a new four-dimensional hyper-chaotic system is designed based on a flux controlled memristor model,which can generate complex chaotic attractors.The basic dynamic theory analysis and numerical simulations of the system,such as the stability of equilibrium points,the Lyapunov exponents and dimension,Poincare maps,the power spectrum,and the waveform graph prove that it has rich dynamic behaviors.Then,the circuit implementation of this system is established.The consistency of simulation program with integrated circuit emphasis(SPICE)simulation and numerical analysis proves the ability to generate chaos.Finally,a new image encryption scheme is designed by using the memristor-based hyper-chaotic system proposed in this paper.The scheme involves a total of two encryptions.By using different security analysis factors,the proposed algorithm is compared with other image encryption schemes,including correlation analysis,information entropy,etc.The results show that the proposed image encryption scheme has a large key space and presents a better encryption effect.
文摘A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor(IGBT)devices using SPICE simulators by extending the lumped-charge method.The new method assumes local quasi-neutrality in the undepleted N^(-)base region and uses the total collector current,the nodal hole density and voltage as the basic quantities.In SPICE implementation,it makes clear and accurate definitions of three kinds of nodes—the carrier density nodes,the voltage nodes and the current generator nodes—in the undepleted N^(-)base region.It uses central finite difference to approximate electron and hole current generators and sets up the current continuity equation in a control volume for every carrier density node in the undepleted N^(-)base region.It is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient processes.We use this method to simulate IGBT devices in SPICE simulators and get a good agreement with technology computer-aided design simulations.
