The photo absorbing, photo transmitting and photoluminescence performances of WiO2 photocatalysts compounded with V2O5 or WO3 were investigated by UV-Vis spectra, transmitting spectra, and PL spectra, respectively. Th...The photo absorbing, photo transmitting and photoluminescence performances of WiO2 photocatalysts compounded with V2O5 or WO3 were investigated by UV-Vis spectra, transmitting spectra, and PL spectra, respectively. The energy band structures of TiO2 photocatalysts were analyzed. The photocatalytic activities of the TiO2 photocatalysts were investigated by splitting of water for 02 evolution. The results indicate that the band gaps of WO3 and V205 are about 2.8 and 2.14 eV, respectively, and the band gap of rutile TiO2 is about 3.08 eV. Speeds of water splitting for 2%WO3-TiO2 and 8%V2O5-TiO2 photocatalysts are 420 and 110 μmol/（L.h）, respectively, under UV light irradiation. V2O5 and WO3 compounded with suitable concentration can improve the photocatalytic activity of TiO2 with Fe3＋ as electron acceptor.展开更多
The electron configuration of the active sites can be effectively modulated by regulating the inherent nanostructure of the electrocatalysts,thereby enhancing their electrocatalytic performance.To tackle the unexplore...The electron configuration of the active sites can be effectively modulated by regulating the inherent nanostructure of the electrocatalysts,thereby enhancing their electrocatalytic performance.To tackle the unexplored challenge of substantial electrochemical overpotential,surface reconstruction has emerged as a necessary strategy.Focusing on key aspects such as Janus structures,overflow effects,the d-band center displacement hypothesis,and interface coupling related to electrochemical reactions is essential for water electrolysis.Emerging as frontrunners among next-generation electrocatalysts,Mott-Schottky(M-S)catalysts feature a heterojunction formed between a metal and a semiconductor,offering customizable and predictable interfacial synergy.This review offers an in-depth examination of the processes driving the hydrogen and oxygen evolution reactions(HER and OER),highlighting the benefits of employing nanoscale transition metal nitrides,carbides,oxides,and phosphides in M-S heterointerface catalysts.Furthermore,the challenges,limitations,and future prospects of employing M-S heterostructured catalysts for water splitting are thoroughly discussed.展开更多
Lonsdaleite,also known as hexagonal diamond,is an allotrope of carbon with a hexagonal crystal structure,which was discovered in the nanostructure of the Canyon Diablo meteorite.Theoretical calculations have shown tha...Lonsdaleite,also known as hexagonal diamond,is an allotrope of carbon with a hexagonal crystal structure,which was discovered in the nanostructure of the Canyon Diablo meteorite.Theoretical calculations have shown that this structure gives it exceptional physical properties that exceed those of cubic diamond,making it highly promising for groundbreaking applications in superhard cutting tools,wide-bandgap semiconductor devices,and materials for extreme environments.As a result,the controllable synthesis of hexagonal diamond has emerged as a cutting-edge research focus in materials science.This review briefly outlines the progress in this area,with a focus on the mechanisms governing its key synthesis conditions,its intrinsic physical properties,and its potential applications in various fields.展开更多
This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materi...This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.展开更多
Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic a...Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.展开更多
Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive en...Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.展开更多
Traditional polymeric photocatalysts are typically constructed using aromatic building blocks to enhanceπ-conjugation.However,their inherent hydrophobicity and rigid structure lead to poor dispersibility in aqueous s...Traditional polymeric photocatalysts are typically constructed using aromatic building blocks to enhanceπ-conjugation.However,their inherent hydrophobicity and rigid structure lead to poor dispersibility in aqueous solutions,resulting in significant optical losses and exciton recombination.In this study,two series of six novel polymer photocatalysts(FLUSO,FLUSO-PEG10,FLUSO-PEG30;CPDTSO,CPDTSO-PEG10,CPDTSO-PEG30)are designed and synthesized by incorporating the hydrophilic,non-conjugated polyethylene glycol(PEG)chain,into both the main and side chains of polymers.By precisely optimizing the ratio of hydrophilic PEG segments,the water dispersibility is significantly improved while the light absorption capability of the polymer photocatalysts is well maintained.The experimental results confirm that the optimized FLUSO-PEG10 exhibits excellent photocatalytic hydrogen evolution rate,reaching up to 33.9 mmol/(g·h),which is nearly three times higher than that of fullyπ-conjugated counterparts.Water contact angles and particle size analyses reveal that incorporating non-conjugated segments into the main chains enhances the capacitance of the polymer/water interface and reduces particle aggregation,leading to improved photocatalyst dispersion and enhanced charge generation.展开更多
Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application ...Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.展开更多
Enhancing the output capacity of semiconductor bridge(SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficie...Enhancing the output capacity of semiconductor bridge(SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficiency of energetic semiconductor bridge(ESCB) is the primary focus for large-scale engineering applications in the future. Here, the Al/CuO nano-film ESCB was efficiently fabricated using 3D direct writing. The electrostatic safety of the film is enhanced by precisely adjusting the particle size of Al, while ensuring that the SCB can initiate the film with small energy. The burst characteristics of SCB/ESCB were thoroughly investigated by employing a 100 μF tantalum capacitor to induce SCB and ESCB under an intense voltage gradient. The solid-state heating process of both SCB and ESCB was analyzed with multi physical simulation(MPS). The experimental results demonstrate that the critical burst time of both SCB and ESCB decreases with increasing voltage. Under the same voltage, the critical burst time of ESCB is longer than that of SCB, primarily due to differences in the melting to vaporization stage. The MPS results indicate that the highest temperature is observed at the V-shaped corner of SCB. Due to the thermal contact resistance between SCB and the film, heat conduction becomes more concentrated in the central region of the bridge, resulting in a faster solid-state heating process for ESCB compared to SCB.The results of the gap ignition experiments indicate that at a 19 mm gap, an ESCB with a film mass of 10 mg can ignite nickel hydrazine nitrate(NHN) and cyclotrimethylenetrinitramine(RDX). This suggests that thermite ESCB can serve as a novel, safe, and reliable energy exchange element and initiator in largescale engineering applications.展开更多
The hierarchical BiOX(X=Cl, Br, I) microflowers were successfully synthesized via simple precipitation method at 160 ℃ for 24 h and characterized by XRD, SEM, TEM, UV-vis DRS and N_2 adsorption-desorption techniques....The hierarchical BiOX(X=Cl, Br, I) microflowers were successfully synthesized via simple precipitation method at 160 ℃ for 24 h and characterized by XRD, SEM, TEM, UV-vis DRS and N_2 adsorption-desorption techniques. The as-prepared samples were pure phases and of microflowers composed of nanosheets which intercrossed with each other. The specific surface areas were about 22.9, 17.3 and 16.2 m^2/g for BiOCl, BiOBr and BiOI, respectively. The photocatalytic activities of BiOX powers were evaluated by RhB degradation under UV-vis light irradiation in the order of BiOCl > BiOBr > BiOI. Also, the kinetics of RhB degradation over BiOI was selectively investigated, demonstrating that the kinetics of Rh B degradation follows apparent first-order kinetics and fits the Langmuir-Hinshelwood model.展开更多
采用半导体光放大器 (SemiconductorOpticalAmplifier,SOA)的分段模型 ,对基于SOA光纤环镜的非归零 (Non Return to Zero ,NRZ)信号时钟分量提取进行了数值模拟 SOA光纤环镜可以将NRZ信号转化为包含其时钟分量的伪归零 (Pseudo Return ...采用半导体光放大器 (SemiconductorOpticalAmplifier,SOA)的分段模型 ,对基于SOA光纤环镜的非归零 (Non Return to Zero ,NRZ)信号时钟分量提取进行了数值模拟 SOA光纤环镜可以将NRZ信号转化为包含其时钟分量的伪归零 (Pseudo Return to Zero ,PRZ)信号 给出了2 .5Gb/s下的模拟计算结果 ,并与实验结果进行了比较 ,进一步给出了展开更多
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ...With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.展开更多
Silicon carbide (SiC) single crystal,which hasn’t melting point at normal pressu r e and sublimates at temperature above 2000℃,is a wide bandgap semiconductor.Si lic on carbide has more than 200 kinds of polytype.Am...Silicon carbide (SiC) single crystal,which hasn’t melting point at normal pressu r e and sublimates at temperature above 2000℃,is a wide bandgap semiconductor.Si lic on carbide has more than 200 kinds of polytype.Among these polytypes,3C SiC、6H SiC and 4H SiC are the most common ones,the band width of them are 2.4eV,3.0eV , an d 3.4eV,restpectively.For its high temperature tolerance and radiation resistanc e,silicon carbide semiconductor can be extensively used to fabricate the power d evi ces and electroluminescence devices operating at high power,high frequency and high radiation environments. The aim of this paper is to introduce our research results of the growth of larg e SiC single crystals by physical vapor transport method.The seed is SiC single crystal wafer with perfect (0001)Si face,which is chosen from the furnace growi ng the green abrasive material of SiC in industry.The source is green powder of SiC .The seed and the source are placed into the graphite crucible of a graphite res i stively heated vacuum furnace.The growth chamber is filled with the atmosphere o f pure araon.When the temperature of source rises to 2300℃,the crystal growth p ro ceeds.The rate of crystal growth is dependent on the growth temperature,the pres sure in furnace and the temperature gradient and distance between the seed and t h e source.Under the controlled growth conditions,the bulk SiC crystal with a diam eter of 40mm and a thickness of 15mm is obtained.The crystal appears to be n type electrical conductivity,the results of X ray Laue photography analysis indicat e that it is 6H SiC polytype.The defects of the crystal are also studied by many kinds of method.展开更多
Wurtzite structure gallium nitride GaN,a direct bandgap semiconductor,is an ideal material for fabrication of blue/green light emitting diodes,laser diodes, and high powder Integrated Circuites.Up to now,small single ...Wurtzite structure gallium nitride GaN,a direct bandgap semiconductor,is an ideal material for fabrication of blue/green light emitting diodes,laser diodes, and high powder Integrated Circuites.Up to now,small single crystals,powders and nanomaterials of GaN have successfully synthesized as well as applied films gro wn by MOCVD.In this report,another condensed state of GaN,nanocrystal assembled bulk,was synthesized and its spectra are investigated. Metal gallium or gallium alloys are used as starting materials and haloids used as catalyzer in ammonia.Buff transparent GaN bulks were obtained at 350—500℃.P owder X ray diffraction indicated that the bulks are wurtaite GaN single phase. HRTEM confirmed that the bulks are composed of nanoparticles with average size o f 12mm.The well crystallized particle shows clear diffraction spots.PL spectra of the material are similar to that of GaN singe crystals under the ultraviolet excitation,but blue shift is observed near gap band.Red shift occurs in Raman scattering comparing with single crystals.The materials have the broad potential in the future because it not only possesses of mechanical and optical characteri stics owned by single crystals but also holds the nano properties of the nanoma terials.展开更多
The frequency selective surface (FSS) has been widely applied by means of its spatial frequency-filter characteristic, but it is always designed and used as a device with fixed frequency response. In order to tune the...The frequency selective surface (FSS) has been widely applied by means of its spatial frequency-filter characteristic, but it is always designed and used as a device with fixed frequency response. In order to tune the resonant frequency and switch the frequency channel, a scheme of mechanically tunable FSS is theoretically analyzed by using the method of Floquet's vector modes expansion and fields matching. A double-layer tunable FSS with dipole element can perform a dynamic range of resonant frequency covering whole X-band.展开更多
Heat emission and the voltage are the main factors affecting the refrigerating capacity of semiconductor refrigerator.Some experiments were designed to obtain their influence on refrigerating capacity of semiconductor...Heat emission and the voltage are the main factors affecting the refrigerating capacity of semiconductor refrigerator.Some experiments were designed to obtain their influence on refrigerating capacity of semiconductor and the interaction between heat emission and the voltage.The results show that fixing the heat dissipation,there is an optimal working voltage for the semiconductor module;and if improving the heat emission,the refrigerating capacity increases and the optimal voltage becomes larger.This can provide the basis for the optimal design of semiconductor refrigeration.展开更多
基金Project(11JJ5010) supported by the Natural Science Foundation of Hunan Province, ChinaProject(2011RS4069) supported by the Planned Science and Technology Program of Hunan Province, ChinaProject supported by the Postdoctoral Science Foundation of Central South University,China
文摘The photo absorbing, photo transmitting and photoluminescence performances of WiO2 photocatalysts compounded with V2O5 or WO3 were investigated by UV-Vis spectra, transmitting spectra, and PL spectra, respectively. The energy band structures of TiO2 photocatalysts were analyzed. The photocatalytic activities of the TiO2 photocatalysts were investigated by splitting of water for 02 evolution. The results indicate that the band gaps of WO3 and V205 are about 2.8 and 2.14 eV, respectively, and the band gap of rutile TiO2 is about 3.08 eV. Speeds of water splitting for 2%WO3-TiO2 and 8%V2O5-TiO2 photocatalysts are 420 and 110 μmol/（L.h）, respectively, under UV light irradiation. V2O5 and WO3 compounded with suitable concentration can improve the photocatalytic activity of TiO2 with Fe3＋ as electron acceptor.
基金supported by the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(2021L574)the Guizhou Provincial Science and Technology Foundation([2024]ZK General 425 and 438)+1 种基金the National Natural Science Foundation of China(22309033)the Academic Young Talent Foundation of Guizhou Normal University([2022]B05 and B06)。
文摘The electron configuration of the active sites can be effectively modulated by regulating the inherent nanostructure of the electrocatalysts,thereby enhancing their electrocatalytic performance.To tackle the unexplored challenge of substantial electrochemical overpotential,surface reconstruction has emerged as a necessary strategy.Focusing on key aspects such as Janus structures,overflow effects,the d-band center displacement hypothesis,and interface coupling related to electrochemical reactions is essential for water electrolysis.Emerging as frontrunners among next-generation electrocatalysts,Mott-Schottky(M-S)catalysts feature a heterojunction formed between a metal and a semiconductor,offering customizable and predictable interfacial synergy.This review offers an in-depth examination of the processes driving the hydrogen and oxygen evolution reactions(HER and OER),highlighting the benefits of employing nanoscale transition metal nitrides,carbides,oxides,and phosphides in M-S heterointerface catalysts.Furthermore,the challenges,limitations,and future prospects of employing M-S heterostructured catalysts for water splitting are thoroughly discussed.
基金the National Natural Science Foundation of China(12274170 and 52225203)。
文摘Lonsdaleite,also known as hexagonal diamond,is an allotrope of carbon with a hexagonal crystal structure,which was discovered in the nanostructure of the Canyon Diablo meteorite.Theoretical calculations have shown that this structure gives it exceptional physical properties that exceed those of cubic diamond,making it highly promising for groundbreaking applications in superhard cutting tools,wide-bandgap semiconductor devices,and materials for extreme environments.As a result,the controllable synthesis of hexagonal diamond has emerged as a cutting-edge research focus in materials science.This review briefly outlines the progress in this area,with a focus on the mechanisms governing its key synthesis conditions,its intrinsic physical properties,and its potential applications in various fields.
文摘This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors(AlX,X=N,P,As,Sb)and indium-based semiconductors(InX,X=N,P,As,Sb)as potential materials for optical devices.Band structure calculations reveal that,except for InSb,all other compounds are direct bandgap semiconductors,with AlN exhibiting a bandgap of 3.245 eV.The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X.In contrast,the conduction band minimum is influenced by all orbitals,with a predominant contribution from the p-orbitals.The static dielectric constant increased with the expansion of the unit cell volume.Compared to AlX and InX with larger X atoms,AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance.Regarding mechanical properties,AlN and InN displayed greater shear and bulk modulus than the other compounds.Moreover,among these eight crystal types,a higher modulus was associated with a lower light loss function value,indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.
基金Supported by Bissell Distinguished Professor Endowment Fund at UNC-Charlotte。
文摘Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.
基金National Natural Science Foundation of China(12002196,12102140)。
文摘Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.
文摘Traditional polymeric photocatalysts are typically constructed using aromatic building blocks to enhanceπ-conjugation.However,their inherent hydrophobicity and rigid structure lead to poor dispersibility in aqueous solutions,resulting in significant optical losses and exciton recombination.In this study,two series of six novel polymer photocatalysts(FLUSO,FLUSO-PEG10,FLUSO-PEG30;CPDTSO,CPDTSO-PEG10,CPDTSO-PEG30)are designed and synthesized by incorporating the hydrophilic,non-conjugated polyethylene glycol(PEG)chain,into both the main and side chains of polymers.By precisely optimizing the ratio of hydrophilic PEG segments,the water dispersibility is significantly improved while the light absorption capability of the polymer photocatalysts is well maintained.The experimental results confirm that the optimized FLUSO-PEG10 exhibits excellent photocatalytic hydrogen evolution rate,reaching up to 33.9 mmol/(g·h),which is nearly three times higher than that of fullyπ-conjugated counterparts.Water contact angles and particle size analyses reveal that incorporating non-conjugated segments into the main chains enhances the capacitance of the polymer/water interface and reduces particle aggregation,leading to improved photocatalyst dispersion and enhanced charge generation.
基金Supported by the National Key Research and Development Program of China(2021YFB2012601)National Natural Science Foundation of China(12204109)+1 种基金Science and Technology Innovation Plan of Shanghai Science and Technology Commission(21JC1400200)Higher Education Indus⁃try Support Program of Gansu Province(2022CYZC-06)。
文摘Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.
基金supported by the National Natural Science Foundation of China(Grant Nos.22275092 and 52372084)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.KYCX24_0709)+1 种基金the Fundamental Research Funds for the Central Universities(Grant No.30923010920)the State Key Laboratory of Transient Chemical Effects and Control,China,(Grant No.6142602230201).
文摘Enhancing the output capacity of semiconductor bridge(SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficiency of energetic semiconductor bridge(ESCB) is the primary focus for large-scale engineering applications in the future. Here, the Al/CuO nano-film ESCB was efficiently fabricated using 3D direct writing. The electrostatic safety of the film is enhanced by precisely adjusting the particle size of Al, while ensuring that the SCB can initiate the film with small energy. The burst characteristics of SCB/ESCB were thoroughly investigated by employing a 100 μF tantalum capacitor to induce SCB and ESCB under an intense voltage gradient. The solid-state heating process of both SCB and ESCB was analyzed with multi physical simulation(MPS). The experimental results demonstrate that the critical burst time of both SCB and ESCB decreases with increasing voltage. Under the same voltage, the critical burst time of ESCB is longer than that of SCB, primarily due to differences in the melting to vaporization stage. The MPS results indicate that the highest temperature is observed at the V-shaped corner of SCB. Due to the thermal contact resistance between SCB and the film, heat conduction becomes more concentrated in the central region of the bridge, resulting in a faster solid-state heating process for ESCB compared to SCB.The results of the gap ignition experiments indicate that at a 19 mm gap, an ESCB with a film mass of 10 mg can ignite nickel hydrazine nitrate(NHN) and cyclotrimethylenetrinitramine(RDX). This suggests that thermite ESCB can serve as a novel, safe, and reliable energy exchange element and initiator in largescale engineering applications.
基金Project(21301194)supported by the National Natural Science Foundation of ChinaProject(20130162120031)supported by Research Fund for the Doctoral Program of Higher Education of China
文摘The hierarchical BiOX(X=Cl, Br, I) microflowers were successfully synthesized via simple precipitation method at 160 ℃ for 24 h and characterized by XRD, SEM, TEM, UV-vis DRS and N_2 adsorption-desorption techniques. The as-prepared samples were pure phases and of microflowers composed of nanosheets which intercrossed with each other. The specific surface areas were about 22.9, 17.3 and 16.2 m^2/g for BiOCl, BiOBr and BiOI, respectively. The photocatalytic activities of BiOX powers were evaluated by RhB degradation under UV-vis light irradiation in the order of BiOCl > BiOBr > BiOI. Also, the kinetics of RhB degradation over BiOI was selectively investigated, demonstrating that the kinetics of Rh B degradation follows apparent first-order kinetics and fits the Langmuir-Hinshelwood model.
文摘采用半导体光放大器 (SemiconductorOpticalAmplifier,SOA)的分段模型 ,对基于SOA光纤环镜的非归零 (Non Return to Zero ,NRZ)信号时钟分量提取进行了数值模拟 SOA光纤环镜可以将NRZ信号转化为包含其时钟分量的伪归零 (Pseudo Return to Zero ,PRZ)信号 给出了2 .5Gb/s下的模拟计算结果 ,并与实验结果进行了比较 ,进一步给出了
基金Project(51774341) supported by the National Natural Science Foundation of ChinaProject(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
文摘With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
文摘Silicon carbide (SiC) single crystal,which hasn’t melting point at normal pressu r e and sublimates at temperature above 2000℃,is a wide bandgap semiconductor.Si lic on carbide has more than 200 kinds of polytype.Among these polytypes,3C SiC、6H SiC and 4H SiC are the most common ones,the band width of them are 2.4eV,3.0eV , an d 3.4eV,restpectively.For its high temperature tolerance and radiation resistanc e,silicon carbide semiconductor can be extensively used to fabricate the power d evi ces and electroluminescence devices operating at high power,high frequency and high radiation environments. The aim of this paper is to introduce our research results of the growth of larg e SiC single crystals by physical vapor transport method.The seed is SiC single crystal wafer with perfect (0001)Si face,which is chosen from the furnace growi ng the green abrasive material of SiC in industry.The source is green powder of SiC .The seed and the source are placed into the graphite crucible of a graphite res i stively heated vacuum furnace.The growth chamber is filled with the atmosphere o f pure araon.When the temperature of source rises to 2300℃,the crystal growth p ro ceeds.The rate of crystal growth is dependent on the growth temperature,the pres sure in furnace and the temperature gradient and distance between the seed and t h e source.Under the controlled growth conditions,the bulk SiC crystal with a diam eter of 40mm and a thickness of 15mm is obtained.The crystal appears to be n type electrical conductivity,the results of X ray Laue photography analysis indicat e that it is 6H SiC polytype.The defects of the crystal are also studied by many kinds of method.
文摘Wurtzite structure gallium nitride GaN,a direct bandgap semiconductor,is an ideal material for fabrication of blue/green light emitting diodes,laser diodes, and high powder Integrated Circuites.Up to now,small single crystals,powders and nanomaterials of GaN have successfully synthesized as well as applied films gro wn by MOCVD.In this report,another condensed state of GaN,nanocrystal assembled bulk,was synthesized and its spectra are investigated. Metal gallium or gallium alloys are used as starting materials and haloids used as catalyzer in ammonia.Buff transparent GaN bulks were obtained at 350—500℃.P owder X ray diffraction indicated that the bulks are wurtaite GaN single phase. HRTEM confirmed that the bulks are composed of nanoparticles with average size o f 12mm.The well crystallized particle shows clear diffraction spots.PL spectra of the material are similar to that of GaN singe crystals under the ultraviolet excitation,but blue shift is observed near gap band.Red shift occurs in Raman scattering comparing with single crystals.The materials have the broad potential in the future because it not only possesses of mechanical and optical characteri stics owned by single crystals but also holds the nano properties of the nanoma terials.
文摘The frequency selective surface (FSS) has been widely applied by means of its spatial frequency-filter characteristic, but it is always designed and used as a device with fixed frequency response. In order to tune the resonant frequency and switch the frequency channel, a scheme of mechanically tunable FSS is theoretically analyzed by using the method of Floquet's vector modes expansion and fields matching. A double-layer tunable FSS with dipole element can perform a dynamic range of resonant frequency covering whole X-band.
基金Supported by National High Technology Research and Development Program(2006AA05Z229)National Natural Science Foundation of China(50578059)
文摘Heat emission and the voltage are the main factors affecting the refrigerating capacity of semiconductor refrigerator.Some experiments were designed to obtain their influence on refrigerating capacity of semiconductor and the interaction between heat emission and the voltage.The results show that fixing the heat dissipation,there is an optimal working voltage for the semiconductor module;and if improving the heat emission,the refrigerating capacity increases and the optimal voltage becomes larger.This can provide the basis for the optimal design of semiconductor refrigeration.
