The polaron effect on the optical rectification in spherical quantum dots with a shallow hydrogenic impurity in the presence of electric field is theoretically investigated by taking into account the interactions of t...The polaron effect on the optical rectification in spherical quantum dots with a shallow hydrogenic impurity in the presence of electric field is theoretically investigated by taking into account the interactions of the electrons with both confined and surface optical phonons. Besides, the interaction between impurity and phonons is also considered. Numerical calculations are presented for typical Zn1-xCdxSe/ZnSe material. It is found that the polaronic effect or electric field leads to the redshifted resonant peaks of the optical rectification coefficients. It is also found that the peak values of the optical rectification coefficients with the polaronic effect are larger than without the polaronic effect, especially for smaller Cd concentrations or stronger electric field.展开更多
For square-step quantum wells(SSQWs) and graded-step quantum wells(GSQWs), the nonlinear optical rectification(NOR), second harmonic generation(SHG) and third harmonic generation(THG) coefficients under an intense las...For square-step quantum wells(SSQWs) and graded-step quantum wells(GSQWs), the nonlinear optical rectification(NOR), second harmonic generation(SHG) and third harmonic generation(THG) coefficients under an intense laser field(ILF) are analyzed. The found results indicate that ILF can ensure a vital influence on the shape and height of the confined potential profile of both SSQWs and GSQWs, and alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential. According to the results, the potential profile and height of the GSQWs are affected more significantly by ILF intensity compared to SSQWs. These results indicate that NOR, SHG and THG coefficients of SSQWs and GSQWs may be calibrated in a preferred energy range and the magnitude of the resonance peak(RP) by tuning the ILF parameter. It is feasible to classify blue or red shifts in RP locations of NOR, SHG and THG coefficients by varying the ILF parameter. Our results can be useful in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.展开更多
The rectification behaviours in organic magnetic/nonmagnetic co-oligomer spin rectifiers are investigated theoretically. It is found that both the charge current and the spin current through the device are rectified a...The rectification behaviours in organic magnetic/nonmagnetic co-oligomer spin rectifiers are investigated theoretically. It is found that both the charge current and the spin current through the device are rectified at the same time. By adjusting the proportion between the magnetic and nonmagnetic components, the threshold voltage and the rectification ratio of the rectifier are modulated. A large rectification ratio is obtained when the two components are equal in length. The intrinsic mechanism is analysed in terms of the asymmetric localization of molecular orbitals under biases. The effect of molecular length on the rectification is also discussed. These results will be helpful in the future design of organic spin diodes.展开更多
A GaN/Si nanoheterojunction is prepared through growing Ga N nanocrystallites（nc-GaN） on a silicon nanoporous pillar array（Si-NPA） by a chemical vapor deposition（CVD） technique at a relatively low temperature. T...A GaN/Si nanoheterojunction is prepared through growing Ga N nanocrystallites（nc-GaN） on a silicon nanoporous pillar array（Si-NPA） by a chemical vapor deposition（CVD） technique at a relatively low temperature. The average size of nc-Ga N is determined to be ~10 nm. The spectral measurements disclose that the photoluminescence（PL） from GaN/SiNPA is composed of an ultraviolet（UV） band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence（EL）. The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of Ga N is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current（SCLC） model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.展开更多
Thermal rectification is an exotic thermal transport phenomenon,an analog to electrical rectification,in which heat flux along one direction is larger than that in the other direction and is of significant interest in...Thermal rectification is an exotic thermal transport phenomenon,an analog to electrical rectification,in which heat flux along one direction is larger than that in the other direction and is of significant interest in electronic device applications.However,achieving high thermal rectification efficiency or rectification ratio is still a scientific challenge.In this work,we performed a systematic simulation of thermal rectification by considering both efforts of thermal conductivity asymmetry and geometrical asymmetry in a multi-segment thermal rectifier.It is found that the high asymmetry of thermal conductivity and the asymmetry of the geometric structure of multi-segment thermal rectifiers can significantly enhance the thermal rectification,and the combination of both thermal conductivity asymmetry and geometrical asymmetry can further improve thermal rectification efficiency.This work suggests a possible way for improving thermal rectification devices by asymmetry engineering.展开更多
We provide a way to precisely control the geometry of a SiNx nanopore by adjusting the applied electric pulse. The pore is generated by applying the current pulse across a SiNx membrane, which is immersed in potassium...We provide a way to precisely control the geometry of a SiNx nanopore by adjusting the applied electric pulse. The pore is generated by applying the current pulse across a SiNx membrane, which is immersed in potassium chloride solution. We can generate single conical and cylindrical pores with different electric pulses. A theoretical model based on the Poisson and Nernst-Planck equations is employed to simulate the ion transport properties in the channel. In turn, we can analyze pore geometries by fitting the experimental current-voltage （I-V） curves. for the conical pores with a pore size of 0.5-2nm in diameter, the slope angles are around -2.5% to -10%. Moreover, the pore orifice can be enlarged slightly by additional repeating pulses. The conic pore lumen becomes close to a cylindrical channel, resulting in a symmetry I-V transport under positive and negative biases. A qualitative understanding of these effects will help us to prepare useful solid-nanopores as demanded.展开更多
Using nonequilibrium molecular dynamics simulations, a comprehensive study of the asymmetric heat conduction in the composite system consisting of the Frenkel-Kontorova （FK） model and Fermi-Pasta-Ulam （FPU） model ...Using nonequilibrium molecular dynamics simulations, a comprehensive study of the asymmetric heat conduction in the composite system consisting of the Frenkel-Kontorova （FK） model and Fermi-Pasta-Ulam （FPU） model is conducted. The calculated results show that in a larger system, the rectifying direction can be reversed only by adjusting the thermal bias. Moreover, the rectification reversal depends critically on the system size and the properties of the interface. The mechanisms of the two types of asymmetric heat conduction induced by nonlinearity are discussed. Considering the novel asymmetric heat conduction in the system, it may possess possible applications to manage the thermal rectification in situ directionally without re-building the structure.展开更多
The effect of interfacial coupling on rectification in an organic co-oligomer spin diode is investigated theoretically by considering spin-independent and spin-resolved couplings respectively. In the case of spin-inde...The effect of interfacial coupling on rectification in an organic co-oligomer spin diode is investigated theoretically by considering spin-independent and spin-resolved couplings respectively. In the case of spin-independent coupling, an optimal interfacial coupling strength with a significant enhanced rectification ratio is found, whose value depends on the structural asymmetry of the molecule. In the case of spin-resolved coupling, we found that only the variation of the interfacial coupling with specific spin is effective to modulate the rectification, which is due to the spin-filtering property of the central asymmetric magnetic molecule. A transition of the spin-current rectification between parallel spin-current rectification and antiparallel spin-current rectification may be observed with the variation of the spin-resolved interfacial coupling. The interfacial effect on rectification is further analyzed from the spin-dependent transmission spectrum at different biases.展开更多
Spin-excited states in an asymmetric magnetic organic co-oligomer diode are investigated theoretically. The results demonstrate that the structural asymmetry of the co-oligomer is modulated by the spin-excited states,...Spin-excited states in an asymmetric magnetic organic co-oligomer diode are investigated theoretically. The results demonstrate that the structural asymmetry of the co-oligomer is modulated by the spin-excited states, which is embodied in the wave functions of the eigenstates as well as the spin density wave. By calculating the transport property, a robust spin-current rectification concomitant with a charge-current rectification is observed in all spin-excited states. However, the current through the diode is suppressed distinctly by the spin-excited states, while the rectification ratios may be reduced or enhanced depending on the bias and the excited spins. The intrinsic mechanism is analyzed from the spin-dependent trans- mission combined with the change of molecular eigenstates under bias. Finally, the temperature-induced spin excitation is simulated. Significant rectification behavior is obtained even at room temperature.展开更多
Based on the transfer matrix method, the recursion of an electromagnetic wave propagating in an asymmetric Kerr nonlinear medium is analytically formulated, from which the rectification effect is clearly presented. Th...Based on the transfer matrix method, the recursion of an electromagnetic wave propagating in an asymmetric Kerr nonlinear medium is analytically formulated, from which the rectification effect is clearly presented. The effects on the rectification regioh of the linear part and nonlinear coefficient of permittivity are both studied, and the energy densities before and after rectification are discussed. We use a rectifying factor to describe the intensity of the rectification effect. The result shows that every transmission peak is divided into two parts when the symmetry is broken, and nonlinear asymmetry has a more significant effect on the rectification effect than the linear asymmetry. The rectification intensity and area will be enlarged when the asymmetry factor is increased in a certain range.展开更多
The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 ...The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported.The quantum structure combined withδ-doping technology is used to reduce the scattering of the device and improve its electron mobility;at the same time,the generation of surface channels is suppressed by the Si_(0.14)Ge_(0.72)Sn_(0.14) cap layer.By adjusting the threshold voltage of the device to 91 mV,setting the device aspect ratio to 1μm/0.4μm and adopting a novel diode connection method,the rectification efficiency of the device is improved.With simulation by Silvaco TCAD software,good performance is displayed in the transfer and output characteristics.For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ,the rectification efficiency of the device can reach 7.14%at an input power of-10 dBm,which is 4.2 times that of a Si MOSFET(with a threshold voltage of 80 mV)under the same conditions;this device shows a better rectification effect than a Si MOSFET in the range of-30 dBm to 6.9 dBm.展开更多
Thermal rectification refers to the phenomenon by which the magnitude of the heat flux in one direction is much larger than that in the opposite direction.In this study,we propose to implement the thermal rectificatio...Thermal rectification refers to the phenomenon by which the magnitude of the heat flux in one direction is much larger than that in the opposite direction.In this study,we propose to implement the thermal rectification phenomenon in an asymmetric solid–liquid–solid sandwiched system with a nano-structured interface.By using the non-equilibrium molecular dynamics simulations,the thermal transport through the solid–liquid–solid system is examined,and the thermal rectification phenomenon can be observed.It is revealed that the thermal rectification effect can be attributed to the significant difference in the interfacial thermal resistance between Cassie and Wenzel states when reversing the temperature bias.In addition,effects of the liquid density,solid–liquid bonding strength and nanostructure size on the thermal rectification are examined.The findings may provide a new way for designs of certain thermal devices.展开更多
The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio： for a shor...The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio： for a short molecular diode, the chargecurrent rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length.展开更多
The transport properties of a conjugated dipyrimidinyl-diphenyl diblock oligomer sandwiched between two gold electrodes, as recently reported by [Diez-Perez et al. Nature Chem. 1 635 （2009）], are theoretically inves...The transport properties of a conjugated dipyrimidinyl-diphenyl diblock oligomer sandwiched between two gold electrodes, as recently reported by [Diez-Perez et al. Nature Chem. 1 635 （2009）], are theoretically investigated using the fully self-consistent nonequilibrium Green＇s function method combined with density functional theory. Two kinds of symmetrical anchoring geometries are considered. Calculated current-voltage curves show that the contact structure has a strong effect on the rectification behaviour of the molecular diode. For the equilateral triangle configuration, pronounced rectification behaviour comparable to the experimental measurement is revealed, and the theoretical analysis indicates that the observed rectification characteristic results from the asymmetric shift of the perturbed molecular energy levels under bias voltage. While for the tetrahedron configuration, both rectification and negative differential conductivity behaviours are observed. The calculated results further prove the close dependence of the transporting characteristics of molecular junctions on contact configuration.展开更多
We investigate the nonlinear optical rectification(NOR) of spherical quantum dots(QDs) under Hulthén plus Hellmann confining potential with the external tuning elements. Energy and wavefunction are determined by ...We investigate the nonlinear optical rectification(NOR) of spherical quantum dots(QDs) under Hulthén plus Hellmann confining potential with the external tuning elements. Energy and wavefunction are determined by using the Nikiforov–Uvarov method. Expression for the NOR coefficient is derived by the density matrix theory. The results show that the applied external elements and internal parameters of this system have a strong influence on intraband nonlinear optical properties. It is hopeful that this tuning of the nonlinear optical properties of GaAs/Ga_(1-x)Al_(x)As QDs can make a greater contribution to preparation of new functional optical devices.展开更多
Supercapacitor diode is a novel ion device that performs both supercapacitor energy storage and ion diode rectification functions.However,previously reported devices are limited by their large size and complex process...Supercapacitor diode is a novel ion device that performs both supercapacitor energy storage and ion diode rectification functions.However,previously reported devices are limited by their large size and complex processes.In this work,we demonstrate a screen-printed micro supercapacitor diode(MCAPode)that based on the insertion of a finger mode with spinel ZnCo_(2)O_(4) as cathode and activated carbon as anode for the first time,and featuring an excellent area specific capacitance(1.21 mF cm^(-2)at 10 mV s^(-1))and high rectification characteristics(rectification ratioⅠof 11.99 at 40 mV s^(-1)).Taking advantage of the ionic gel electrolyte,which provides excellent stability during repeated flexing and at high temperatures.In addition,MCAPode exhibits excellent electrochemical performance and rectification capability in"AND"and"OR"logic gates.These findings provide practical solutions for future expansion of micro supercapacitor diode applications.展开更多
Charge trapping devices incorporating 2D materials and high-κdielectrics have emerged as promising candidates for compact,multifunctional memory devices compatible with silicon-based manufacturing processes.However,t...Charge trapping devices incorporating 2D materials and high-κdielectrics have emerged as promising candidates for compact,multifunctional memory devices compatible with silicon-based manufacturing processes.However,traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed.Here,we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al_(2)O_(3)trapping layer with a MoS_(2)channel,where charge traps reside within the Al_(2)O_(3)bulk confirmed by transfer curves with different gatevoltage sweeping rates and photoluminescence(PL)spectra.The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed(~300 ns),an extremely low OFF current of 10^(-14)A,a high ON/OFF current ratio of up to 10^(7),and stable retention and endurance properties.Furthermore,the device with a simple symmetrical structure exhibits VDpolarity-dependent reverse rectification behavior in the high resistance state(HRS),with a rectification ratio of 10^(5).Additionally,utilizing the synergistic modulation of the conductance of the MoS_(2)channel by V_(D)and V_(G),it achieves gate-tunable reverse rectifier and ternary logic capabilities.展开更多
Ratchet transport of overdamped particles is investigated in superimposed driven lattices using Langevin dynamics simulations. It is found that noise can strongly affect the transport of the particles. When lattices d...Ratchet transport of overdamped particles is investigated in superimposed driven lattices using Langevin dynamics simulations. It is found that noise can strongly affect the transport of the particles. When lattices driving dominates the transport, the noise acts as a disturbance of the directed transport and slows down the average velocity of the particles.When the driving phase has less impact on particle transport, Gaussian white noise can play a positive role. By simply modulating these two parameters, we can control efficiency and the direction of the directed currents.展开更多
The second-harmonic generation （SHG） coefficient in an asymmetric quantum dot （QD） with a static magnetic field is theoretically investigated. Within the framework of the effective-mass approximation, we obtain th...The second-harmonic generation （SHG） coefficient in an asymmetric quantum dot （QD） with a static magnetic field is theoretically investigated. Within the framework of the effective-mass approximation, we obtain the confined wave functions and energies of electrons in the QD. We also obtain the SHC coefficient by the compact-density-matrix approach and the iterative method. The numerical results for the typical GaAs/AlGaAs QD show that the SHC coefficient depends strongly on the magnitude of magnetic field, parameters of the asymmetric potential and the radius of the QD. The resonant peak shifts with the magnetic field or the radius of the QD changing.展开更多
A novel hybrid structure with high responsivity and efficiency is proposed based on an L-shaped frame nano-antenna(LSFNA)array for solar energy harvesting application.So,two types of LSFNAs are designed and optimized ...A novel hybrid structure with high responsivity and efficiency is proposed based on an L-shaped frame nano-antenna(LSFNA)array for solar energy harvesting application.So,two types of LSFNAs are designed and optimized to enhance the harvesting characteristics of traditional simple electric dipole nano-antenna(SEDNA).The LSFNA geometrical dimensions are optimized to have the best values for the required input impedance at three resonance wavelengths ofλ_(res)=10μm,15μm,and 20μm.Then the LSFNAs with three different sizes are modeled like a planar spiral-shaped array(PSSA).Also,a fractal bowtie nano-antenna is connected with the PSSA in the array gap.This proposed hybrid structure consists of two main elements:(I)Three different sizes of the LSFNAs with two different material types are designed based on the thin-film metal-insulator-metal diodes that are a proper method for infrared energy harvesting.(Ⅱ)The PSSA gap is designed based on the electron field emission proposed by the Fowler-Nordheim theory for the array rectification.Finally,the proposed device is analyzed.The results show that the PSSA not only has an averaged 3-time enhancement in the harvesting characteristics(such as return loss,harvesting efficiency,etc.)than the previously proposed structures but also is a multi-resonance wide-band device.Furthermore,the proposed antenna takes up less space in the electronic circuit and has an easy implementation process.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.11364028)the Major Projects of the Natural Science Foundation of Inner Mongolia Autonomous Region,China(Grant No.2013ZD02)the Project of "Prairie Excellent" Engineering in Inner Mongolia Autonomous Region,China
文摘The polaron effect on the optical rectification in spherical quantum dots with a shallow hydrogenic impurity in the presence of electric field is theoretically investigated by taking into account the interactions of the electrons with both confined and surface optical phonons. Besides, the interaction between impurity and phonons is also considered. Numerical calculations are presented for typical Zn1-xCdxSe/ZnSe material. It is found that the polaronic effect or electric field leads to the redshifted resonant peaks of the optical rectification coefficients. It is also found that the peak values of the optical rectification coefficients with the polaronic effect are larger than without the polaronic effect, especially for smaller Cd concentrations or stronger electric field.
文摘For square-step quantum wells(SSQWs) and graded-step quantum wells(GSQWs), the nonlinear optical rectification(NOR), second harmonic generation(SHG) and third harmonic generation(THG) coefficients under an intense laser field(ILF) are analyzed. The found results indicate that ILF can ensure a vital influence on the shape and height of the confined potential profile of both SSQWs and GSQWs, and alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential. According to the results, the potential profile and height of the GSQWs are affected more significantly by ILF intensity compared to SSQWs. These results indicate that NOR, SHG and THG coefficients of SSQWs and GSQWs may be calibrated in a preferred energy range and the magnitude of the resonance peak(RP) by tuning the ILF parameter. It is feasible to classify blue or red shifts in RP locations of NOR, SHG and THG coefficients by varying the ILF parameter. Our results can be useful in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.10904084 and 10904083)the MiddleAged and Young Scientists Research Awards Foundation of Shandong Province of China (Grant No.2009BS01009)+1 种基金the Science and Technology Foundation for Institution of Higher Education of Shandong Province of China (Grant No.J09LA03)the Postdoctoral Science Foundation of China
文摘The rectification behaviours in organic magnetic/nonmagnetic co-oligomer spin rectifiers are investigated theoretically. It is found that both the charge current and the spin current through the device are rectified at the same time. By adjusting the proportion between the magnetic and nonmagnetic components, the threshold voltage and the rectification ratio of the rectifier are modulated. A large rectification ratio is obtained when the two components are equal in length. The intrinsic mechanism is analysed in terms of the asymmetric localization of molecular orbitals under biases. The effect of molecular length on the rectification is also discussed. These results will be helpful in the future design of organic spin diodes.
基金Project supported by the National Natural Science Foundation of China(Grant No.61176044)
文摘A GaN/Si nanoheterojunction is prepared through growing Ga N nanocrystallites（nc-GaN） on a silicon nanoporous pillar array（Si-NPA） by a chemical vapor deposition（CVD） technique at a relatively low temperature. The average size of nc-Ga N is determined to be ~10 nm. The spectral measurements disclose that the photoluminescence（PL） from GaN/SiNPA is composed of an ultraviolet（UV） band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence（EL）. The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of Ga N is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current（SCLC） model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.
基金Project supported by the National Natural Science Foundation of China(Grant No.12274355)Xiamen University Malaysia Research Fund(Grant Nos.XMUMRF/2022C9/IORI/003 and XMUMRF/2022-C10/IORI/004)。
文摘Thermal rectification is an exotic thermal transport phenomenon,an analog to electrical rectification,in which heat flux along one direction is larger than that in the other direction and is of significant interest in electronic device applications.However,achieving high thermal rectification efficiency or rectification ratio is still a scientific challenge.In this work,we performed a systematic simulation of thermal rectification by considering both efforts of thermal conductivity asymmetry and geometrical asymmetry in a multi-segment thermal rectifier.It is found that the high asymmetry of thermal conductivity and the asymmetry of the geometric structure of multi-segment thermal rectifiers can significantly enhance the thermal rectification,and the combination of both thermal conductivity asymmetry and geometrical asymmetry can further improve thermal rectification efficiency.This work suggests a possible way for improving thermal rectification devices by asymmetry engineering.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61471336,51503207 and 61504146the Joint-Scholar of West Light Foundation of Chinese Academy of Sciences
文摘We provide a way to precisely control the geometry of a SiNx nanopore by adjusting the applied electric pulse. The pore is generated by applying the current pulse across a SiNx membrane, which is immersed in potassium chloride solution. We can generate single conical and cylindrical pores with different electric pulses. A theoretical model based on the Poisson and Nernst-Planck equations is employed to simulate the ion transport properties in the channel. In turn, we can analyze pore geometries by fitting the experimental current-voltage （I-V） curves. for the conical pores with a pore size of 0.5-2nm in diameter, the slope angles are around -2.5% to -10%. Moreover, the pore orifice can be enlarged slightly by additional repeating pulses. The conic pore lumen becomes close to a cylindrical channel, resulting in a symmetry I-V transport under positive and negative biases. A qualitative understanding of these effects will help us to prepare useful solid-nanopores as demanded.
基金supported by the Natural Science Foundation of Hunan Province,China(Grant No.12JJ3009)the Changsha Science and Technology Plan Projects,Chinathe Science and Technology Plan Projects of Hunan Province,China(Grant No.2013SK3148)
文摘Using nonequilibrium molecular dynamics simulations, a comprehensive study of the asymmetric heat conduction in the composite system consisting of the Frenkel-Kontorova （FK） model and Fermi-Pasta-Ulam （FPU） model is conducted. The calculated results show that in a larger system, the rectifying direction can be reversed only by adjusting the thermal bias. Moreover, the rectification reversal depends critically on the system size and the properties of the interface. The mechanisms of the two types of asymmetric heat conduction induced by nonlinearity are discussed. Considering the novel asymmetric heat conduction in the system, it may possess possible applications to manage the thermal rectification in situ directionally without re-building the structure.
基金Project supported by the National Natural Science Foundation of China(Grant No.1374195)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2014AM017)the Excellent Young Scholars Research Fund of Shandong Normal University,China
文摘The effect of interfacial coupling on rectification in an organic co-oligomer spin diode is investigated theoretically by considering spin-independent and spin-resolved couplings respectively. In the case of spin-independent coupling, an optimal interfacial coupling strength with a significant enhanced rectification ratio is found, whose value depends on the structural asymmetry of the molecule. In the case of spin-resolved coupling, we found that only the variation of the interfacial coupling with specific spin is effective to modulate the rectification, which is due to the spin-filtering property of the central asymmetric magnetic molecule. A transition of the spin-current rectification between parallel spin-current rectification and antiparallel spin-current rectification may be observed with the variation of the spin-resolved interfacial coupling. The interfacial effect on rectification is further analyzed from the spin-dependent transmission spectrum at different biases.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10904084,10904083,and 11374195)the Excellent Young Scholars Research Fund of Shandong Normal University
文摘Spin-excited states in an asymmetric magnetic organic co-oligomer diode are investigated theoretically. The results demonstrate that the structural asymmetry of the co-oligomer is modulated by the spin-excited states, which is embodied in the wave functions of the eigenstates as well as the spin density wave. By calculating the transport property, a robust spin-current rectification concomitant with a charge-current rectification is observed in all spin-excited states. However, the current through the diode is suppressed distinctly by the spin-excited states, while the rectification ratios may be reduced or enhanced depending on the bias and the excited spins. The intrinsic mechanism is analyzed from the spin-dependent trans- mission combined with the change of molecular eigenstates under bias. Finally, the temperature-induced spin excitation is simulated. Significant rectification behavior is obtained even at room temperature.
基金supported by the National Natural Science Foundation of China(Grant No.51032002)the National High Technology Research and Development Program of China(Grant No.2011AA050526)
文摘Based on the transfer matrix method, the recursion of an electromagnetic wave propagating in an asymmetric Kerr nonlinear medium is analytically formulated, from which the rectification effect is clearly presented. The effects on the rectification regioh of the linear part and nonlinear coefficient of permittivity are both studied, and the energy densities before and after rectification are discussed. We use a rectifying factor to describe the intensity of the rectification effect. The result shows that every transmission peak is divided into two parts when the symmetry is broken, and nonlinear asymmetry has a more significant effect on the rectification effect than the linear asymmetry. The rectification intensity and area will be enlarged when the asymmetry factor is increased in a certain range.
基金supported by the National 111 Center(Grant No.B12026)Research on***Technology of Intelligent Reconfigurable General System(Grant No.F020250058)。
文摘The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor(n-MOSFET)with a Si_(0.14)Ge_(0.72)Sn_(0.14)-Ge_(0.82)Sn_(0.18)-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported.The quantum structure combined withδ-doping technology is used to reduce the scattering of the device and improve its electron mobility;at the same time,the generation of surface channels is suppressed by the Si_(0.14)Ge_(0.72)Sn_(0.14) cap layer.By adjusting the threshold voltage of the device to 91 mV,setting the device aspect ratio to 1μm/0.4μm and adopting a novel diode connection method,the rectification efficiency of the device is improved.With simulation by Silvaco TCAD software,good performance is displayed in the transfer and output characteristics.For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ,the rectification efficiency of the device can reach 7.14%at an input power of-10 dBm,which is 4.2 times that of a Si MOSFET(with a threshold voltage of 80 mV)under the same conditions;this device shows a better rectification effect than a Si MOSFET in the range of-30 dBm to 6.9 dBm.
基金the National Natural Science Foundation of China(Grant No.51976002)the Beijing Nova Program of Science and Technology(Grant No.Z191100001119033)。
文摘Thermal rectification refers to the phenomenon by which the magnitude of the heat flux in one direction is much larger than that in the opposite direction.In this study,we propose to implement the thermal rectification phenomenon in an asymmetric solid–liquid–solid sandwiched system with a nano-structured interface.By using the non-equilibrium molecular dynamics simulations,the thermal transport through the solid–liquid–solid system is examined,and the thermal rectification phenomenon can be observed.It is revealed that the thermal rectification effect can be attributed to the significant difference in the interfacial thermal resistance between Cassie and Wenzel states when reversing the temperature bias.In addition,effects of the liquid density,solid–liquid bonding strength and nanostructure size on the thermal rectification are examined.The findings may provide a new way for designs of certain thermal devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.11374195)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2014AM017)+1 种基金the Taishan Scholar Project of Shandong Province,Chinathe Excellent Young Scholars Research Fund of Shandong Normal University,China
文摘The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio： for a short molecular diode, the chargecurrent rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length.
基金supported by the National Natural Science Foundation of China (Grant Nos. 10804064,10904084,and 10974121)the Middle-Aged and Young Scientists Research Awards Foundation of Shandong Province of China (Grant No. 2009BS01009)the Natural Science Foundation of Shandong Province of China (Grant No. ZR2010AZ002)
文摘The transport properties of a conjugated dipyrimidinyl-diphenyl diblock oligomer sandwiched between two gold electrodes, as recently reported by [Diez-Perez et al. Nature Chem. 1 635 （2009）], are theoretically investigated using the fully self-consistent nonequilibrium Green＇s function method combined with density functional theory. Two kinds of symmetrical anchoring geometries are considered. Calculated current-voltage curves show that the contact structure has a strong effect on the rectification behaviour of the molecular diode. For the equilateral triangle configuration, pronounced rectification behaviour comparable to the experimental measurement is revealed, and the theoretical analysis indicates that the observed rectification characteristic results from the asymmetric shift of the perturbed molecular energy levels under bias voltage. While for the tetrahedron configuration, both rectification and negative differential conductivity behaviours are observed. The calculated results further prove the close dependence of the transporting characteristics of molecular junctions on contact configuration.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.51702003,61775087,11674312,52174161,and 12174161)。
文摘We investigate the nonlinear optical rectification(NOR) of spherical quantum dots(QDs) under Hulthén plus Hellmann confining potential with the external tuning elements. Energy and wavefunction are determined by using the Nikiforov–Uvarov method. Expression for the NOR coefficient is derived by the density matrix theory. The results show that the applied external elements and internal parameters of this system have a strong influence on intraband nonlinear optical properties. It is hopeful that this tuning of the nonlinear optical properties of GaAs/Ga_(1-x)Al_(x)As QDs can make a greater contribution to preparation of new functional optical devices.
基金the financial support from the Key Project of National Natural Science Foundation of China(12131010)the National Natural Science Foundation of China(22279166)+2 种基金the Special Project for Marine Economy Development of Guangdong Province(GDNRC[2023]26)the International Cooperation Base of Infrared Reflection Liquid Crystal Polymers and Device(2015B050501010)the Guangdong Basic and Applied Basic Research Foundation(2022B1515120019)。
文摘Supercapacitor diode is a novel ion device that performs both supercapacitor energy storage and ion diode rectification functions.However,previously reported devices are limited by their large size and complex processes.In this work,we demonstrate a screen-printed micro supercapacitor diode(MCAPode)that based on the insertion of a finger mode with spinel ZnCo_(2)O_(4) as cathode and activated carbon as anode for the first time,and featuring an excellent area specific capacitance(1.21 mF cm^(-2)at 10 mV s^(-1))and high rectification characteristics(rectification ratioⅠof 11.99 at 40 mV s^(-1)).Taking advantage of the ionic gel electrolyte,which provides excellent stability during repeated flexing and at high temperatures.In addition,MCAPode exhibits excellent electrochemical performance and rectification capability in"AND"and"OR"logic gates.These findings provide practical solutions for future expansion of micro supercapacitor diode applications.
基金supported by the National Key Research&Development Project of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)。
文摘Charge trapping devices incorporating 2D materials and high-κdielectrics have emerged as promising candidates for compact,multifunctional memory devices compatible with silicon-based manufacturing processes.However,traditional charge trapping devices encounter bottlenecks including complex device structure and low operation speed.Here,we demonstrate an ultrafast reconfigurable direct charge trapping device utilizing only a 30 nm-thick Al_(2)O_(3)trapping layer with a MoS_(2)channel,where charge traps reside within the Al_(2)O_(3)bulk confirmed by transfer curves with different gatevoltage sweeping rates and photoluminescence(PL)spectra.The direct charging tapping device shows exceptional memory performance in both three-terminal and two-terminal operation modes characterized by ultrafast three-terminal operation speed(~300 ns),an extremely low OFF current of 10^(-14)A,a high ON/OFF current ratio of up to 10^(7),and stable retention and endurance properties.Furthermore,the device with a simple symmetrical structure exhibits VDpolarity-dependent reverse rectification behavior in the high resistance state(HRS),with a rectification ratio of 10^(5).Additionally,utilizing the synergistic modulation of the conductance of the MoS_(2)channel by V_(D)and V_(G),it achieves gate-tunable reverse rectifier and ternary logic capabilities.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11575064 and 11175067)the PCSIRT(Grant No.IRT1243)+2 种基金the GDUPS Project(2016)the Natural Science Foundation of Guangdong Province,China(Grant Nos.2016A030313433 and 2017A030313029)the Innovation Project of Graduate School of South China Normal University
文摘Ratchet transport of overdamped particles is investigated in superimposed driven lattices using Langevin dynamics simulations. It is found that noise can strongly affect the transport of the particles. When lattices driving dominates the transport, the noise acts as a disturbance of the directed transport and slows down the average velocity of the particles.When the driving phase has less impact on particle transport, Gaussian white noise can play a positive role. By simply modulating these two parameters, we can control efficiency and the direction of the directed currents.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10975125)
文摘The second-harmonic generation （SHG） coefficient in an asymmetric quantum dot （QD） with a static magnetic field is theoretically investigated. Within the framework of the effective-mass approximation, we obtain the confined wave functions and energies of electrons in the QD. We also obtain the SHC coefficient by the compact-density-matrix approach and the iterative method. The numerical results for the typical GaAs/AlGaAs QD show that the SHC coefficient depends strongly on the magnitude of magnetic field, parameters of the asymmetric potential and the radius of the QD. The resonant peak shifts with the magnetic field or the radius of the QD changing.
文摘A novel hybrid structure with high responsivity and efficiency is proposed based on an L-shaped frame nano-antenna(LSFNA)array for solar energy harvesting application.So,two types of LSFNAs are designed and optimized to enhance the harvesting characteristics of traditional simple electric dipole nano-antenna(SEDNA).The LSFNA geometrical dimensions are optimized to have the best values for the required input impedance at three resonance wavelengths ofλ_(res)=10μm,15μm,and 20μm.Then the LSFNAs with three different sizes are modeled like a planar spiral-shaped array(PSSA).Also,a fractal bowtie nano-antenna is connected with the PSSA in the array gap.This proposed hybrid structure consists of two main elements:(I)Three different sizes of the LSFNAs with two different material types are designed based on the thin-film metal-insulator-metal diodes that are a proper method for infrared energy harvesting.(Ⅱ)The PSSA gap is designed based on the electron field emission proposed by the Fowler-Nordheim theory for the array rectification.Finally,the proposed device is analyzed.The results show that the PSSA not only has an averaged 3-time enhancement in the harvesting characteristics(such as return loss,harvesting efficiency,etc.)than the previously proposed structures but also is a multi-resonance wide-band device.Furthermore,the proposed antenna takes up less space in the electronic circuit and has an easy implementation process.
