In this pape,we give four methods of discriminations its nonsingularity by utilizing only parametr r1,r2 and elements of the first row of level-2 (r1, r2)-circulant matrices of type (m,n).
In this paper,it is given that the new equivalent definition of level-k (r1,r2, …,rk)-cir culant matrices of type (n1,n2,…,nk) in [1] and we give the explicit expression of its the eigenval ues and four methods of d...In this paper,it is given that the new equivalent definition of level-k (r1,r2, …,rk)-cir culant matrices of type (n1,n2,…,nk) in [1] and we give the explicit expression of its the eigenval ues and four methods of discriminations its nonsingularity by utilizing only parameter r1,r2, …,rk and elements of the first row of the sorts matrices.展开更多
Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films w...Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer.The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm).Its abnormal Hall resistance(R_(Hall)),coercivity(H_(c))and effective magnetic anisotropy constant(Keff)are 0.08Ω,284 Oe and 1.36 Merg/cm^(3),respectively,which are 100%,492%,and 183%higher than the corresponding values(0.04Ω,48 Oe,and 0.48 Merg/cm^(3))of the Pd(6 nm)/Co(1 nm)/Pd(3 nm)trilayer films.The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic(FM)coupling,and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films.展开更多
A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significa...A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.展开更多
The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ...The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.展开更多
文摘In this pape,we give four methods of discriminations its nonsingularity by utilizing only parametr r1,r2 and elements of the first row of level-2 (r1, r2)-circulant matrices of type (m,n).
文摘In this paper,it is given that the new equivalent definition of level-k (r1,r2, …,rk)-cir culant matrices of type (n1,n2,…,nk) in [1] and we give the explicit expression of its the eigenval ues and four methods of discriminations its nonsingularity by utilizing only parameter r1,r2, …,rk and elements of the first row of the sorts matrices.
基金Project supported by Shandong Provincial Natural Science Foundation,China(Grant No.ZR2022ME059)。
文摘Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer.The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm).Its abnormal Hall resistance(R_(Hall)),coercivity(H_(c))and effective magnetic anisotropy constant(Keff)are 0.08Ω,284 Oe and 1.36 Merg/cm^(3),respectively,which are 100%,492%,and 183%higher than the corresponding values(0.04Ω,48 Oe,and 0.48 Merg/cm^(3))of the Pd(6 nm)/Co(1 nm)/Pd(3 nm)trilayer films.The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic(FM)coupling,and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films.
文摘A novel super-junction LDMOS with low resistance channel(LRC),named LRC-LDMOS based on the silicon-on-insulator(SOI)technology is proposed.The LRC is highly doped on the surface of the drift region,which can significantly reduce the specific on resistance(R^(on,sp))in forward conduction.The charge compensation between the LRC,N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance,which can completely deplete the whole drift,thus the breakdown voltage(BV)is enhanced in reverse blocking.The three-dimensional(3D)simulation results show that the BV and R^(on,sp)of the device can reach 253 V and 15.5 mΩ·cm^(2),respectively,and the Baliga's figure of merit(FOM=BV^(2)/R^(on,sp))of 4.1 MW/cm^(2)is achieved,breaking through the silicon limit.
基金supported by Key-Area Research and Development Program of Guangdong Province,China (Grant Nos. 2020B010174001 and 2020B010171002)Ningbo Science and Technology Innovation 2025 (Grant No. 2019B10123)。
文摘The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.
