This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the in...This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.展开更多
The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiC...The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF3 plasma treatment of the SiCOH film led to a reduction in both the fiat-band voltage VFB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film＇s characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C：F deposition at the surface of the SiCOH film.展开更多
Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical e...Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.展开更多
基金supported by National Natural Science Foundation of China(Nos.10975105,11075114)
文摘This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.
基金supported by National Natural Science Foundation of China(Nos.10575074,10635010)
文摘The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF3 plasma treatment of the SiCOH film led to a reduction in both the fiat-band voltage VFB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film＇s characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C：F deposition at the surface of the SiCOH film.
基金supported by National Natural Science Foundation of China (Nos.10975105, 10575074, 10635010)
文摘Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.
