Doping of rare earth elements into Bi_(4)Ti_(3)O_(12) can significantly enhance the upconversion photoluminescence(UCPL)properties,but its structure-property relationship is still unclear.In this work,Er-doped bismuth...Doping of rare earth elements into Bi_(4)Ti_(3)O_(12) can significantly enhance the upconversion photoluminescence(UCPL)properties,but its structure-property relationship is still unclear.In this work,Er-doped bismuth titanate Bi_(4-x)Er_(x)Ti_(3)O_(12)(x=0,0.1,0.2,0.3,0.4,0.5)ceramics were synthesized via solid-state reaction method.The x-ray diffraction analysis confirmed the orthorhombic crystalline structure of the Bi4-xErxTi_(3)O_(12) ceramics without any secondary phases.Experiments and calculations of positron annihilation spectroscopy were carried out to characterize their defect structure.The comparison between the experimental and calculated lifetime revealed that vacancy clusters were the main defects in the ceramics.The increase of the intensity of the second positron lifetime component(I_(2))of Bi_(3.5)Er_(0.5)Ti_(3)O_(12)ceramics indicated the presence of a high concentration of vacancy clusters.The UCPL spectra showed the sudden enhanced UCPL performance in Bi3.7Er0.3Ti3O12and Bi_(3.5)Er_(0.5)Ti_(3)O_(12)ceramics,which were consistent with the variation of the second positron lifetime component(I2).These results indicate that the enhanced UCPL properties are influenced not only by the concentrations of rare earth ions but also by the concentration of vacancy clusters present within the ceramics.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs)and their heterostructures(HSs)exhibit unique optical properties and show great promise for developing next-generation optoelectronics.However,the photo-lumines...Two-dimensional(2D)transition metal dichalcogenides(TMDs)and their heterostructures(HSs)exhibit unique optical properties and show great promise for developing next-generation optoelectronics.However,the photo-luminescence(PL)quantum yield of monolayer(1L)TMDs is still quite low at room temperature,which severely lim-its their practical applications.Here we report a PL enhancement effect of 1L WS_(2) at room temperature when con-structing it into 1L-WS_(2)/hBN/1L-MoS_(2) vertical HSs.The PL enhancement factors(EFs)can be up to 4.2.By using transient absorption(TA)spectroscopy,we demonstrate that the PL enhancement effect is due to energy transfer from 1L MoS_(2) to 1L WS_(2).The energy transfer process occurs on a picosecond timescale and lasts more than one hundred picoseconds which indicates a prominent contribution from exciton-exciton annihilation.Furthermore,the PL en-hancement effect of 1L WS_(2) can be observed in 2L-MoS_(2)/hBN/1L-WS_(2) and 3L-MoS_(2)/hBN/1L-WS_(2) HSs.Our study provides a comprehensive understanding of the energy transfer process in the PL enhancement of 2D TMDs and a fea-sible way to optimize the performance of TMD-based optoelectronic devices.展开更多
Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films incr...Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence（PL） peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.展开更多
Erbium （Er） doped in nanocrystalline Si （nc-Si：Er） surrounded by SiO2 is investigated by selectivelyexcited photoluminescence（PL） technique. Optical transitions come from nc-Si （peak located at 1.39 eV, denote...Erbium （Er） doped in nanocrystalline Si （nc-Si：Er） surrounded by SiO2 is investigated by selectivelyexcited photoluminescence（PL） technique. Optical transitions come from nc-Si （peak located at 1.39 eV, denoted as Enc-Si） and Er ions （peak located at 0. 81 eV, denoted as EEr） are measured when nc-Si：Er is excited by 1. 519 eV or higher excitation photon energy（Eex）. Although the Eex of 1.42 eV exceeds the peak energies of Enc-Si and EEr the Enc-Si and EE, emissions are unobserved. A resonant enhancement of the EEr emission is observed in nc-Si：Er. While the PL peak intensitiy of the Enc-Si transition is quenched under this Eex. The resonant-enhanced effect in nc-Si ：Er indicates that the energy transfer process of carriers from nc-Si to nearby Er ions is enhanced by resonant excitation.展开更多
A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photolumin...A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.展开更多
Colloidal ZnAgInSe（ZAISe） quantum dots（QDs） with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence（PL） of ZAISe QDs only could be tuned by cha...Colloidal ZnAgInSe（ZAISe） quantum dots（QDs） with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence（PL） of ZAISe QDs only could be tuned by changing the composition. In this work the size-tunable photoluminescence was observed successfully. The red shift in the photoluminescence spectra was caused by the quantum confinement effect. The time-resolved photoluminescence indicated that the luminescence mechanisms of the ZAISe QDs were contributed by three recombination processes. Furthermore, the temperature-dependent PL spectra were investigated. We verified the regular change of temperature-dependent PL intensity, peak energy, and the emission linewidth of broadening for ZAISe QDs. According to these fitting data, the activation energy（？E） of ZAISe QDs with different nanocrystal sizes was obtained and the stability of luminescence was discussed.展开更多
Long-term optical data storage(ODS)technology is essential to break the bottleneck of high energy consumption for information storage in the current era of big data.Here,ODS with an ultralong lifetime of 2×10^(7)...Long-term optical data storage(ODS)technology is essential to break the bottleneck of high energy consumption for information storage in the current era of big data.Here,ODS with an ultralong lifetime of 2×10^(7)years is attained with single ultrafast laser pulse induced reduction of Eu^(3+)ions and tailoring of optical properties inside the Eu-doped aluminosilicate glasses.We demonstrate that the induced local modifications in the glass can stand against the temperature of up to 970 K and strong ultraviolet light irradiation with the power density of 100 kW/cm^(2).Furthermore,the active ions of Eu^(2+)exhibit strong and broadband emission with the full width at half maximum reaching 190 nm,and the photoluminescence(PL)is flexibly tunable in the whole visible region by regulating the alkaline earth metal ions in the glasses.The developed technology and materials will be of great significance in photonic applications such as long-term ODS.展开更多
Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and ab...Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films＇ exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I（3-x）Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.展开更多
Visible photoluminescence （PL） has been observed from rare earth （Tm, Sm and Dy）-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-orient...Visible photoluminescence （PL） has been observed from rare earth （Tm, Sm and Dy）-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80-110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of ^1D2 to ^3F4 and ^1G4 to ^3H6 intra 4f electron of Tm^3＋, the yellow emissions of AlN：Sm are due to ^4G5/2 to the ^6HJ （J=5/2, 7/2, 9/2, 11/2） and the reddish emissions of AlN：Dy correspond to the ^4F9/2 to ^6HJ （J=5/2, 13/2, 11/2 and 9/2） and ^6Fll/2 transitions.展开更多
In this paper the multiwalled carbon nanotubes （MWNTs） were synthesized by a chemical vapour deposition and the SEM graph shows that the sample has good construction. The micro-Raman spectrum shows the characteristi...In this paper the multiwalled carbon nanotubes （MWNTs） were synthesized by a chemical vapour deposition and the SEM graph shows that the sample has good construction. The micro-Raman spectrum shows the characteristic line of the MWNTs and an additional line produced by the defects on the outer surface of MWNTs. The photoluminescence （PL） spectra observed experimentally are variable under different excitation wavelengths and the strong excitation wavelength dependence of luminescence indicates a distribution of emitters which include electron π in excited states and the Van Hove singularities. The absorption spectra confirm the transition channels which are consistent with the PL emission.展开更多
In this paper, the temperature-dependent photoluminescence（PL） properties of Ga N grown on Si（111） substrate are studied. The main emission peaks of Ga N films grown on Si（111） are investigated and compared with...In this paper, the temperature-dependent photoluminescence（PL） properties of Ga N grown on Si（111） substrate are studied. The main emission peaks of Ga N films grown on Si（111） are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FX A and D0 X peaks, of Ga N films grown on Si（111） substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the Ga N films grown on sapphire are under the action of compressive stress, while those grown on Si（111） substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in Ga N films grown on Si（111） and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well（QW） emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers.展开更多
A modified U-tube conical bubble sonoluminescence device is used to study the conical bubble photoluminescence. The spectra of conical bubble sonoluminescence at different concentrations of rhodamine 6G （Rh6G） solut...A modified U-tube conical bubble sonoluminescence device is used to study the conical bubble photoluminescence. The spectra of conical bubble sonoluminescence at different concentrations of rhodamine 6G （Rh6G） solution in 1,2- propanediol have been measured. Results show that the sonoluminescence from the conical bubbles can directly excite Rh6G, which in turn can fluoresce. The light emission of this kind is referred to as conical bubble photoluminescence. The maximum of fluorescence spectral line intensity in the conical bubble photoluminescence has a red shift in relative to that of the standard photo-excited fluorescence, which is due to the higher self-absorption of Rh6G, and the spectral line of conical bubble photoluminescence is broadened in width compared with that of photo-excited fluorescence.展开更多
Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide （a-SiC：H） films, and the influences of Ag island films on the optical properties of the tx-SiC：H films are investigated....Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide （a-SiC：H） films, and the influences of Ag island films on the optical properties of the tx-SiC：H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence （PL） enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of a-SiC：H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.展开更多
We have developed a simple one-step process for synthesis of ternary quantum dots(ZnCdSe,MgCdSe) with photoluminescence wavelengths ranging from the red to the blue region of the visible spectrum.The primary aim of th...We have developed a simple one-step process for synthesis of ternary quantum dots(ZnCdSe,MgCdSe) with photoluminescence wavelengths ranging from the red to the blue region of the visible spectrum.The primary aim of this work was to develop a synthesis for the preparation of Cd-containing quantum dots using a Cd precursor with lower toxicity than those used in common syntheses. This synthesis makes use of Cd(acac)_2 which is significantly less toxic than precursors such as CdO and CdCl_2. We have studied the effect of solvent boiling point, precursors and reaction time on the photoluminescence properties of the ternary quantum dots. Ternary quantum dots synthesized from Cd(acac)_2 in low boiling point solvents have photoluminescence wavelengths in the blue region, while those synthesized in high boiling point solvents have photoluminescence wavelengths in the red region.展开更多
Visible converted emissions produced at an excitation of 286 nm in Zn Nb2O6 ceramics doped with rare-earth ions(RE= Eu3+, Tm3+, Er3+or a combination of these ions) were investigated with the aim of increasing the phot...Visible converted emissions produced at an excitation of 286 nm in Zn Nb2O6 ceramics doped with rare-earth ions(RE= Eu3+, Tm3+, Er3+or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:Zn Nb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped Zn Nb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared Nb O6 groups. Upon 286-nm excitation, Eu:Zn Nb2O6, Tm:Zn Nb2O6, and Er:Zn Nb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of5D0→7FJ(J = 1–4)(Eu3+),1G4→3H6(Tm3+), and2H11/2/4S3/2→4I15/2(Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:Zn Nb2O6, Tm:Zn Nb2O6, and Er:Zn Nb2O6are(0.50, 0.31),(0.14, 0.19), and(0.29, 0.56), respectively. RE ionco-doped Zn Nb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:Zn Nb2O6,Eu/Er:Zn Nb2O6, and Tm/Er:ZnNb2O6 were calculated to be(0.29, 0.24),(0.45, 0.37), and(0.17, 0.25).展开更多
Si^＋ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950℃ and then characterized by using the photoluminescence （PL） technique at different recorded temperatures （RETs...Si^＋ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950℃ and then characterized by using the photoluminescence （PL） technique at different recorded temperatures （RETs）. Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant WTA and SiTO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800℃, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D1 and D2 bands, can be observed at a temperature as high as 280 K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.展开更多
We present in this paper a study of the structural and photoluminescence （PL） properties of terbium （Tb） doped zinc oxide （ZnO） nanoparticles synthesized by a simple low temperature chemical precipitation method...We present in this paper a study of the structural and photoluminescence （PL） properties of terbium （Tb） doped zinc oxide （ZnO） nanoparticles synthesized by a simple low temperature chemical precipitation method, using zinc acetate and terbium nitrate in an isopropanol medium with diethanolamine （DEA） as the capping agent at 60 ℃. The as-prepared samples were heat treated and the PL of the annealed samples were studied. The prepared nanoparticles were characterized with X-ray diffraction （XRD）. The XRD patterns show the pattern of typical ZnO nanoparticles and correspond with the standard XRD pattern given by JCPDS card No. 36-1451, showing the hexagonal phase structure. The PL intensity was enhanced due to Tb^3＋ doping, and it decreased at higher concentrations of Tb^3＋ doping after reaching a certain optimum concentration. The PL spectra of Tb^3＋ doped samples exhibited blue, bluish green, and green emissions at 460 nm （5^D3 - 7^F3）, 484 nm （5^D4 - 7^F6）, and 530 nm （5^D4 - 7^F5）, respectively, which were more intense than the emissions for the undoped ZnO sample. Based on the results, an energy level schematic diagram was proposed to explain the possible electron transition processes.展开更多
Er3＋-doped TiO2-SiO2 powders are prepared by the sol-gel method, and they are characterized by high resolution transmission electron microscopy （HR-TEM）, X-ray diffraction （XRD） spectra, and Raman spectra of the ...Er3＋-doped TiO2-SiO2 powders are prepared by the sol-gel method, and they are characterized by high resolution transmission electron microscopy （HR-TEM）, X-ray diffraction （XRD） spectra, and Raman spectra of the samples. It is shown that the TiO2 nanocrystals are surrounded by an SiO2 glass matrix. The photoluminescence （PL） spectra are recorded at room temperature. A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm. The intensity of the emission, which is related to the defect states, is strongest at the annealing temperature of 800℃. The PL intensity of Er3＋ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO2 particles and Er3＋ ions.展开更多
The photoluminescence （PL） properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases...The photoluminescence （PL） properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050℃. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050℃ is only 42.7%.展开更多
The coupling of local surface plasmon （LSP） of nanoparticle and surface plasmon （SP） mode produced by metal film can lead to the enhanced electromagnetic field, which has an important application in enhancing the ...The coupling of local surface plasmon （LSP） of nanoparticle and surface plasmon （SP） mode produced by metal film can lead to the enhanced electromagnetic field, which has an important application in enhancing the fluorescence of quantum dots （QDs）. Herein, the Ag nanocube and Ag film are used to enhance the fluorescence of CdSe QDs. The enhancement is found to relate to the sizes of the Ag nanocube and the thickness of the Ag film. Moreover, we also present the fluorescence enhancement caused by only SP. The result shows that the coupling between metal nanoparticles and metal film can realize larger field enhancement. Numerical simulation verifies that a nanocube can localize a strong electric field around its comer. All the results indicate that the fluorescence of QDs can be efficiently improved by optimizing the parameters of Ag film and Ag cubes.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2019YFA0210000)the National Natural Science Foundation of China(Grant No.12175232)。
文摘Doping of rare earth elements into Bi_(4)Ti_(3)O_(12) can significantly enhance the upconversion photoluminescence(UCPL)properties,but its structure-property relationship is still unclear.In this work,Er-doped bismuth titanate Bi_(4-x)Er_(x)Ti_(3)O_(12)(x=0,0.1,0.2,0.3,0.4,0.5)ceramics were synthesized via solid-state reaction method.The x-ray diffraction analysis confirmed the orthorhombic crystalline structure of the Bi4-xErxTi_(3)O_(12) ceramics without any secondary phases.Experiments and calculations of positron annihilation spectroscopy were carried out to characterize their defect structure.The comparison between the experimental and calculated lifetime revealed that vacancy clusters were the main defects in the ceramics.The increase of the intensity of the second positron lifetime component(I_(2))of Bi_(3.5)Er_(0.5)Ti_(3)O_(12)ceramics indicated the presence of a high concentration of vacancy clusters.The UCPL spectra showed the sudden enhanced UCPL performance in Bi3.7Er0.3Ti3O12and Bi_(3.5)Er_(0.5)Ti_(3)O_(12)ceramics,which were consistent with the variation of the second positron lifetime component(I2).These results indicate that the enhanced UCPL properties are influenced not only by the concentrations of rare earth ions but also by the concentration of vacancy clusters present within the ceramics.
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)and their heterostructures(HSs)exhibit unique optical properties and show great promise for developing next-generation optoelectronics.However,the photo-luminescence(PL)quantum yield of monolayer(1L)TMDs is still quite low at room temperature,which severely lim-its their practical applications.Here we report a PL enhancement effect of 1L WS_(2) at room temperature when con-structing it into 1L-WS_(2)/hBN/1L-MoS_(2) vertical HSs.The PL enhancement factors(EFs)can be up to 4.2.By using transient absorption(TA)spectroscopy,we demonstrate that the PL enhancement effect is due to energy transfer from 1L MoS_(2) to 1L WS_(2).The energy transfer process occurs on a picosecond timescale and lasts more than one hundred picoseconds which indicates a prominent contribution from exciton-exciton annihilation.Furthermore,the PL en-hancement effect of 1L WS_(2) can be observed in 2L-MoS_(2)/hBN/1L-WS_(2) and 3L-MoS_(2)/hBN/1L-WS_(2) HSs.Our study provides a comprehensive understanding of the energy transfer process in the PL enhancement of 2D TMDs and a fea-sible way to optimize the performance of TMD-based optoelectronic devices.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60878040)the Natural Science Foundation of Hebei Province,China (Grant Nos. F2012201007 and F2012201042)
文摘Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence（PL） peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.
基金Supported by the Natural Science Foundation for Key Program of Jiangsu Higher Education Institu-tions of China(08KJA510002)the″Six Top Talents″Project of Jiangsu Province+2 种基金the Application Research Program of Nantong,China(K2007016,K2008024)the Creative Talents Foundation of Nantong Universitythe Natural Science Foundation(07Z122)of Nantong University~~
文摘Erbium （Er） doped in nanocrystalline Si （nc-Si：Er） surrounded by SiO2 is investigated by selectivelyexcited photoluminescence（PL） technique. Optical transitions come from nc-Si （peak located at 1.39 eV, denoted as Enc-Si） and Er ions （peak located at 0. 81 eV, denoted as EEr） are measured when nc-Si：Er is excited by 1. 519 eV or higher excitation photon energy（Eex）. Although the Eex of 1.42 eV exceeds the peak energies of Enc-Si and EEr the Enc-Si and EE, emissions are unobserved. A resonant enhancement of the EEr emission is observed in nc-Si：Er. While the PL peak intensitiy of the Enc-Si transition is quenched under this Eex. The resonant-enhanced effect in nc-Si ：Er indicates that the energy transfer process of carriers from nc-Si to nearby Er ions is enhanced by resonant excitation.
基金supported by the National Natural Science Foundation of China(Grand Nos.60907021,60977035,and 60877029)the Natural Science Foundation of Tianjin,China(Grant No.11JCYBJC00300)
文摘A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.
基金supported by the National High Technology Research and Development Program of China(Grant No.2013AA014201)the National Key Foundation for Exploring Scientific Instrument of China(Grant No.2014YQ120351)the Natural Science Foundation of Tianjin(Grant No.11JCYBJC00300,4JCZDJC31200,15JCYBJC16700,and 15JCYBJC16800)
文摘Colloidal ZnAgInSe（ZAISe） quantum dots（QDs） with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence（PL） of ZAISe QDs only could be tuned by changing the composition. In this work the size-tunable photoluminescence was observed successfully. The red shift in the photoluminescence spectra was caused by the quantum confinement effect. The time-resolved photoluminescence indicated that the luminescence mechanisms of the ZAISe QDs were contributed by three recombination processes. Furthermore, the temperature-dependent PL spectra were investigated. We verified the regular change of temperature-dependent PL intensity, peak energy, and the emission linewidth of broadening for ZAISe QDs. According to these fitting data, the activation energy（？E） of ZAISe QDs with different nanocrystal sizes was obtained and the stability of luminescence was discussed.
基金supports from the National Key R&D Program of China (No. 2021YFB2802000 and 2021YFB2800500)the National Natural Science Foundation of China (Grant Nos. U20A20211, 51902286, 61775192, 61905215, and 62005164)+2 种基金Key Research Project of Zhejiang Labthe State Key Laboratory of High Field Laser Physics (Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences)China Postdoctoral Science Foundation (2021M702799)。
文摘Long-term optical data storage(ODS)technology is essential to break the bottleneck of high energy consumption for information storage in the current era of big data.Here,ODS with an ultralong lifetime of 2×10^(7)years is attained with single ultrafast laser pulse induced reduction of Eu^(3+)ions and tailoring of optical properties inside the Eu-doped aluminosilicate glasses.We demonstrate that the induced local modifications in the glass can stand against the temperature of up to 970 K and strong ultraviolet light irradiation with the power density of 100 kW/cm^(2).Furthermore,the active ions of Eu^(2+)exhibit strong and broadband emission with the full width at half maximum reaching 190 nm,and the photoluminescence(PL)is flexibly tunable in the whole visible region by regulating the alkaline earth metal ions in the glasses.The developed technology and materials will be of great significance in photonic applications such as long-term ODS.
基金supported by the International Science and Technology Cooperation Program of Science and Technology Bureau of Changchun City,China(Grant No.12ZX68)
文摘Temperature-dependent photoluminescence characteristics of organic-inorganic halide perovskite CH3NH3Pb I3-xClx films prepared using a two-step method on ZnO/FTO substrates were investigated. Surface morphology and absorption characteristics of the films were also studied. Scanning electron microscopy revealed large crystals and substrate coverage. The orthorhombic-to-tetragonal phase transition temperature was-140 K. The films＇ exciton binding energy was 77.6 ± 10.9 meV and the energy of optical phonons was 38.8 ± 2.5 meV. These results suggest that perovskite CH3NH3Pb I（3-x）Clx films have excellent optoelectronic characteristics which further suggests their potential usage in perovskitebased optoelectronic devices.
基金Project supported by the National Natural Science Foundation of China （Grant No 50372082）.
文摘Visible photoluminescence （PL） has been observed from rare earth （Tm, Sm and Dy）-doped AlN films grown by radio-frequency magnetron reactive sputtering. X-ray diffraction indicates that the films are c-axis-oriented hexagonal wurtzite type structure with an average crystal size of about 80-110 nm. Room-temperature PL spectra indicate that the blue emission is due to the transition of ^1D2 to ^3F4 and ^1G4 to ^3H6 intra 4f electron of Tm^3＋, the yellow emissions of AlN：Sm are due to ^4G5/2 to the ^6HJ （J=5/2, 7/2, 9/2, 11/2） and the reddish emissions of AlN：Dy correspond to the ^4F9/2 to ^6HJ （J=5/2, 13/2, 11/2 and 9/2） and ^6Fll/2 transitions.
文摘In this paper the multiwalled carbon nanotubes （MWNTs） were synthesized by a chemical vapour deposition and the SEM graph shows that the sample has good construction. The micro-Raman spectrum shows the characteristic line of the MWNTs and an additional line produced by the defects on the outer surface of MWNTs. The photoluminescence （PL） spectra observed experimentally are variable under different excitation wavelengths and the strong excitation wavelength dependence of luminescence indicates a distribution of emitters which include electron π in excited states and the Van Hove singularities. The absorption spectra confirm the transition channels which are consistent with the PL emission.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126)the National Science Fund for Distinguished Young Scholars of China(Grant No.60925017)
文摘In this paper, the temperature-dependent photoluminescence（PL） properties of Ga N grown on Si（111） substrate are studied. The main emission peaks of Ga N films grown on Si（111） are investigated and compared with those grown on sapphire substrates. The positions of free and bound exciton luminescence peaks, i.e., FX A and D0 X peaks, of Ga N films grown on Si（111） substrates undergo red shifts compared with those grown on sapphire. This is attributed to the fact that the Ga N films grown on sapphire are under the action of compressive stress, while those grown on Si（111） substrate are subjected to tensile stress. Furthermore, the positions of these peaks may be additionally shifted due to different stress conditions in the real sample growth. The emission peaks due to stacking faults are found in Ga N films grown on Si（111） and an S-shaped temperature dependence of PL spectra can be observed, owing to the influence of the quantum well（QW） emission by the localized states near the conduction band gap edge and the temperature-dependent distribution of the photo-generated carriers.
基金Project supported by the National Science Foundation of China（Grant No 1993340041）, the State Key Development Program for Basic Research of China（Grant No 2002CCA03400）, the Institute of 0pto-Electronics, Harbin Institute of Technology of China（Grant No 51472080304ZK0501）, and the Science Foundation of Hebei University, China（Grant No 2005Q06）.
文摘A modified U-tube conical bubble sonoluminescence device is used to study the conical bubble photoluminescence. The spectra of conical bubble sonoluminescence at different concentrations of rhodamine 6G （Rh6G） solution in 1,2- propanediol have been measured. Results show that the sonoluminescence from the conical bubbles can directly excite Rh6G, which in turn can fluoresce. The light emission of this kind is referred to as conical bubble photoluminescence. The maximum of fluorescence spectral line intensity in the conical bubble photoluminescence has a red shift in relative to that of the standard photo-excited fluorescence, which is due to the higher self-absorption of Rh6G, and the spectral line of conical bubble photoluminescence is broadened in width compared with that of photo-excited fluorescence.
基金Project supported by the Key Basic Research Project of Hebei Province, China (Grant No. 12963929D)the Natural Science Foundation of Hebei Province,China (Grant Nos. F2012201007 and F2012201042)
文摘Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide （a-SiC：H） films, and the influences of Ag island films on the optical properties of the tx-SiC：H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence （PL） enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of a-SiC：H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.
基金CIT (Carnegie Institute of Technology)ICES (Institute of Complex Engineered System) for the financial support of this work
文摘We have developed a simple one-step process for synthesis of ternary quantum dots(ZnCdSe,MgCdSe) with photoluminescence wavelengths ranging from the red to the blue region of the visible spectrum.The primary aim of this work was to develop a synthesis for the preparation of Cd-containing quantum dots using a Cd precursor with lower toxicity than those used in common syntheses. This synthesis makes use of Cd(acac)_2 which is significantly less toxic than precursors such as CdO and CdCl_2. We have studied the effect of solvent boiling point, precursors and reaction time on the photoluminescence properties of the ternary quantum dots. Ternary quantum dots synthesized from Cd(acac)_2 in low boiling point solvents have photoluminescence wavelengths in the blue region, while those synthesized in high boiling point solvents have photoluminescence wavelengths in the red region.
基金supported by the National Natural Science Foundation of China(Grant Nos.10572155 and 10732100)the Research Fund for the Doctoral Program of Ministry of Education,China(Grant No.20130171130003)
文摘Visible converted emissions produced at an excitation of 286 nm in Zn Nb2O6 ceramics doped with rare-earth ions(RE= Eu3+, Tm3+, Er3+or a combination of these ions) were investigated with the aim of increasing the photovoltaic efficiency of solar cells. The structure of RE:Zn Nb2O6 ceramics was confirmed by x-ray diffraction patterns. The undoped Zn Nb2O6 could emit a blue emission under 286-nm excitation, which is attributed to the self-trapped excitons’ recombination of the efficient luminescence centers of edge-shared Nb O6 groups. Upon 286-nm excitation, Eu:Zn Nb2O6, Tm:Zn Nb2O6, and Er:Zn Nb2O6 ceramics showed blue, green, and red emissions, which correspond to the transitions of5D0→7FJ(J = 1–4)(Eu3+),1G4→3H6(Tm3+), and2H11/2/4S3/2→4I15/2(Er3+), respectively. The calculated CIE chromaticity coordinates of Eu:Zn Nb2O6, Tm:Zn Nb2O6, and Er:Zn Nb2O6are(0.50, 0.31),(0.14, 0.19), and(0.29, 0.56), respectively. RE ionco-doped Zn Nb2O6 showed a combination of characteristic emissions. The chromaticity coordinates of Eu/Tm:Zn Nb2O6,Eu/Er:Zn Nb2O6, and Tm/Er:ZnNb2O6 were calculated to be(0.29, 0.24),(0.45, 0.37), and(0.17, 0.25).
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60567001 and 10964016)the study-abroad program and the Key Project of Natural Science Foundation of Yunnan Province, China (Grant No 2008CC012)
文摘Si^＋ ion-implanted silicon wafers are annealed at different temperatures from room temperature to 950℃ and then characterized by using the photoluminescence （PL） technique at different recorded temperatures （RETs）. Plentiful optical features are observed and identified clearly in these PL curves. The PL spectra of these samples annealed in different temperature ranges are correspondingly dominated by different emission peaks. Several characteristic features, such as an R line, S bands, a W line, the phonon-assistant WTA and SiTO peaks, can be detected in the PL spectra of samples annealed at different temperatures. For the samples annealed at 800℃, emission peaks from the dislocations bounded at the deep energy levels of the forbidden band, such as D1 and D2 bands, can be observed at a temperature as high as 280 K. These data strongly indicate that a severe transformation of defect structures could be manipulated by the annealing and recorded temperatures. The deactivation energies of the main optical features are extracted from the PL data at different temperatures.
文摘We present in this paper a study of the structural and photoluminescence （PL） properties of terbium （Tb） doped zinc oxide （ZnO） nanoparticles synthesized by a simple low temperature chemical precipitation method, using zinc acetate and terbium nitrate in an isopropanol medium with diethanolamine （DEA） as the capping agent at 60 ℃. The as-prepared samples were heat treated and the PL of the annealed samples were studied. The prepared nanoparticles were characterized with X-ray diffraction （XRD）. The XRD patterns show the pattern of typical ZnO nanoparticles and correspond with the standard XRD pattern given by JCPDS card No. 36-1451, showing the hexagonal phase structure. The PL intensity was enhanced due to Tb^3＋ doping, and it decreased at higher concentrations of Tb^3＋ doping after reaching a certain optimum concentration. The PL spectra of Tb^3＋ doped samples exhibited blue, bluish green, and green emissions at 460 nm （5^D3 - 7^F3）, 484 nm （5^D4 - 7^F6）, and 530 nm （5^D4 - 7^F5）, respectively, which were more intense than the emissions for the undoped ZnO sample. Based on the results, an energy level schematic diagram was proposed to explain the possible electron transition processes.
基金Project supported by the Key Science and Technology Program of Henan Province of China (Grant Nos. 102102210448 and 102102210452)the Scientific Research Fundation of the Education Department of Henan Province,China (Grant No. 2010A140011)
文摘Er3＋-doped TiO2-SiO2 powders are prepared by the sol-gel method, and they are characterized by high resolution transmission electron microscopy （HR-TEM）, X-ray diffraction （XRD） spectra, and Raman spectra of the samples. It is shown that the TiO2 nanocrystals are surrounded by an SiO2 glass matrix. The photoluminescence （PL） spectra are recorded at room temperature. A strong green luminescence and less intense red emission are observed in the samples when they are excited at 325 nm. The intensity of the emission, which is related to the defect states, is strongest at the annealing temperature of 800℃. The PL intensity of Er3＋ ions increases with increasing Ti/Si ratio due to energy transfer between nano-TiO2 particles and Er3＋ ions.
文摘The photoluminescence （PL） properties of Eu-implanted GaN thin films are studied. The experimental results show that the PL intensity is seriously affected by ion implantation conditions. The PL efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050℃. Moreover, the PL intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. The thermal quenching of PL intensity from 10K to 300K for sample annealed at 1050℃ is only 42.7%.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51272246 and 81172082)the Fundamental Research Funds for the Central Universities,China(Grant No.2030000001)
文摘The coupling of local surface plasmon （LSP） of nanoparticle and surface plasmon （SP） mode produced by metal film can lead to the enhanced electromagnetic field, which has an important application in enhancing the fluorescence of quantum dots （QDs）. Herein, the Ag nanocube and Ag film are used to enhance the fluorescence of CdSe QDs. The enhancement is found to relate to the sizes of the Ag nanocube and the thickness of the Ag film. Moreover, we also present the fluorescence enhancement caused by only SP. The result shows that the coupling between metal nanoparticles and metal film can realize larger field enhancement. Numerical simulation verifies that a nanocube can localize a strong electric field around its comer. All the results indicate that the fluorescence of QDs can be efficiently improved by optimizing the parameters of Ag film and Ag cubes.
