Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domai...Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.展开更多
GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to ...GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.展开更多
Gas identification and concentration measurements are important for both understanding and monitoring a variety of phenomena from industrial processes to environmental change.Here a novel mid-IR plasmonic gas sensor w...Gas identification and concentration measurements are important for both understanding and monitoring a variety of phenomena from industrial processes to environmental change.Here a novel mid-IR plasmonic gas sensor with on-chip direct readout is proposed based on unity integration of narrowband spectral response,localized field enhancement and thermal detection.A systematic investigation consisting of both optical and thermal simulations for gas sensing is presented for the first time in three sensing modes including refractive index sensing,absorption sensing and spectroscopy,respectively.It is found that a detection limit less than 100 ppm for CO2 could be realized by a combination of surface plasmon resonance enhancement and metal-organic framework gas enrichment with an enhancement factor over 8000 in an ultracompact optical interaction length of only several microns.Moreover,on-chip spectroscopy is demonstrated with the compressive sensing algorithm via a narrowband plasmonic sensor array.An array of 80 such sensors with an average resonance linewidth of 10 nm reconstructs the CO2 molecular absorption spectrum with the estimated resolution of approximately 0.01 nm far beyond the state-of-the-art spectrometer.The novel device design and analytical method are expected to provide a promising technique for extensive applications of distributed or portable mid-IR gas sensor.展开更多
A cold preamplifier based on superconducting quantum interference devices(SQUIDs)is currently the preferred readout technology for the low-noise transition edge sensor(TES).In this work,we have designed and fabricated...A cold preamplifier based on superconducting quantum interference devices(SQUIDs)is currently the preferred readout technology for the low-noise transition edge sensor(TES).In this work,we have designed and fabricated a series SQUID array(SSA)amplifier for the TES detector readout circuit.In this SSA amplifier,each SQUID cell is composed of a first-order gradiometer formed using two equally large square washers,and an on-chip low pass filter(LPF)as a radiofrequency(RF)choke has been developed to reduce the Josephson oscillation interference between individual SQUID cells.In addition,a highly symmetric layout has been designed carefully to provide a fully consistent embedded electromagnetic environment and achieve coherent flux operation.The measured results show smooth V-Φcharacteristics and a swing voltage that increases linearly with increasing SQUID cell number N.A white flux noise level as low as 0.28μφ;/Hz;is achieved at 0.1 K,corresponding to a low current noise level of 7 pA/Hz;.We analyze the measured noise contribution at mK-scale temperatures and find that the dominant noise derives from a combination of the SSA intrinsic noise and the equivalent current noise of the room temperature electronics.展开更多
A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP...A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.展开更多
Compared with the traditional and inter-chip networks, on-chip networks （NoCs） have enormous wire resources which can be traded for improving other performance requirements. This means that much wider data links can...Compared with the traditional and inter-chip networks, on-chip networks （NoCs） have enormous wire resources which can be traded for improving other performance requirements. This means that much wider data links can be used for NoCs. This paper focuses on the area costs for on-chip routers under four different data-link widths： 8 bits, 16 bits, 128 bits, and 256bits. Firstly, a virtual-channel based on-chip router is introduced. Secondly, the components of the router are implemented by Verilog HDL models and synthesized by Quartus II 4.0 in a FPGA device. Finally, the area costs are analyzed. It can be seen from the results that data-link width has great influence on area costs of buffers and crossbar while has no influence on area costs of arbiter.展开更多
Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity ...Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity of temperature distribution in microsystems,making precise temperature control for electronic components extremely challenging.Herein,we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50×50μm^(2),which are fabricated from dense and flat freestanding Bi2Te3-based ther-moelectric nano films deposited on a newly developed nano graphene oxide membrane substrate.Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics.A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445μW,resulting in an ultrahigh temperature control capability over 100 K mW^(-1).Moreover,an ultra-fast cooling rate exceeding 2000 K s^(-1) and excellent reliability of up to 1 million cycles are observed.Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.展开更多
Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configurati...Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configuration designs,ensuring precision,and facilitating scalability for mass production.Photolithography stands out as an ideal technology,leveraging its unparalleled resolution,exceptional design flexibility,and entrenched position within the mature semiconductor industry.However,comprehensive reviews on its application in MB development remain scarce.This review aims to bridge that gap by thoroughly assessing the recent status and promising prospects of photolithographic microfabrication for MBs.Firstly,we delve into the fundamental principles and step-by-step procedures of photolithography,offering a nuanced understanding of its operational mechanisms and the criteria for photoresist selection.Subsequently,we highlighted the specific roles of photolithography in the fabrication of MBs,including its utilization as a template for creating miniaturized micropatterns,a protective layer during the etching process,a mold for soft lithography,a constituent of MB active component,and a sacrificial layer in the construction of micro-Swiss-roll structure.Finally,the review concludes with a summary of the key challenges and future perspectives of MBs fabricated by photolithography,providing comprehensive insights and sparking research inspiration in this field.展开更多
Optical mode converters are essential for enhancing the capacity of optical communication systems. However, fabrication errors restrict the further improvement of conventional mode converters. To address this challeng...Optical mode converters are essential for enhancing the capacity of optical communication systems. However, fabrication errors restrict the further improvement of conventional mode converters. To address this challenge, we have designed an on-chip TE0–TE1mode converter based on topologically protected waveguide arrays. The simulation results demonstrate that the converter exhibits a mode coupling efficiency of 93.5% near 1550 nm and can tolerate a relative fabrication error of 30%. Our design approach can be extended to enhance the robustness for other integrated photonic devices, beneficial for future development of optical network systems.展开更多
A review on Terahertz end-to-end systems with an emphasis on integrated approaches is presented.Four major catalogs of THz integrated systems,including THz communication systems,THz imaging systems,THz radars,and THz ...A review on Terahertz end-to-end systems with an emphasis on integrated approaches is presented.Four major catalogs of THz integrated systems,including THz communication systems,THz imaging systems,THz radars,and THz spectroscopy systems,are reviewed in this article.The performance of integrated systems is compared with non-integrated solutions,followed by a discussion on the trend in future research avenues and applications.展开更多
基金financial supports from National Key Research and Development Program of China(2021YFB3602500)Self-deployment Project of Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ101)National Natural Science Foundation of China(Grant Nos.62275247 and 61905246).
文摘Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.
基金This work was supported in part by the National Natural Science Founda⁃tion of China under Grant No.U21A20495National Key Research and De⁃velopment Program of China under Grant No.2022YFE0112000High⁃er Education Discipline Innovation Project under Grant No.D17018.
文摘GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.
基金We are grateful for financial supports from National Key Research and Development Program of China(No.2019YFB2203402)National Natural Science Foundation of China(Nos.11774383,11774099,11874029)+3 种基金Guangdong Science and Technology Program International Cooperation Program(2018A050506039)Guangdong Natural Science Founds for Distinguished Young Scholars(No.2020B151502074),Pearl River Talent Plan Program of Guangdong(No.2019QN01X120)Fundamental Research Funds for the Central Universities,Royal Society Newton Advanced Fellowship(No.NA140301)Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDBSSW-JSC014).
文摘Gas identification and concentration measurements are important for both understanding and monitoring a variety of phenomena from industrial processes to environmental change.Here a novel mid-IR plasmonic gas sensor with on-chip direct readout is proposed based on unity integration of narrowband spectral response,localized field enhancement and thermal detection.A systematic investigation consisting of both optical and thermal simulations for gas sensing is presented for the first time in three sensing modes including refractive index sensing,absorption sensing and spectroscopy,respectively.It is found that a detection limit less than 100 ppm for CO2 could be realized by a combination of surface plasmon resonance enhancement and metal-organic framework gas enrichment with an enhancement factor over 8000 in an ultracompact optical interaction length of only several microns.Moreover,on-chip spectroscopy is demonstrated with the compressive sensing algorithm via a narrowband plasmonic sensor array.An array of 80 such sensors with an average resonance linewidth of 10 nm reconstructs the CO2 molecular absorption spectrum with the estimated resolution of approximately 0.01 nm far beyond the state-of-the-art spectrometer.The novel device design and analytical method are expected to provide a promising technique for extensive applications of distributed or portable mid-IR gas sensor.
基金supported by the National Key Research and Development Program of China(Grant No.2017YFA0304003)。
文摘A cold preamplifier based on superconducting quantum interference devices(SQUIDs)is currently the preferred readout technology for the low-noise transition edge sensor(TES).In this work,we have designed and fabricated a series SQUID array(SSA)amplifier for the TES detector readout circuit.In this SSA amplifier,each SQUID cell is composed of a first-order gradiometer formed using two equally large square washers,and an on-chip low pass filter(LPF)as a radiofrequency(RF)choke has been developed to reduce the Josephson oscillation interference between individual SQUID cells.In addition,a highly symmetric layout has been designed carefully to provide a fully consistent embedded electromagnetic environment and achieve coherent flux operation.The measured results show smooth V-Φcharacteristics and a swing voltage that increases linearly with increasing SQUID cell number N.A white flux noise level as low as 0.28μφ;/Hz;is achieved at 0.1 K,corresponding to a low current noise level of 7 pA/Hz;.We analyze the measured noise contribution at mK-scale temperatures and find that the dominant noise derives from a combination of the SSA intrinsic noise and the equivalent current noise of the room temperature electronics.
基金Supported by the National Basic Research Program of China under Grant No 2012CB933501the National Natural Science Foundation of China under Grant Nos 61307033,61274070,61137003 and 61321063
文摘A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.
文摘Compared with the traditional and inter-chip networks, on-chip networks （NoCs） have enormous wire resources which can be traded for improving other performance requirements. This means that much wider data links can be used for NoCs. This paper focuses on the area costs for on-chip routers under four different data-link widths： 8 bits, 16 bits, 128 bits, and 256bits. Firstly, a virtual-channel based on-chip router is introduced. Secondly, the components of the router are implemented by Verilog HDL models and synthesized by Quartus II 4.0 in a FPGA device. Finally, the area costs are analyzed. It can be seen from the results that data-link width has great influence on area costs of buffers and crossbar while has no influence on area costs of arbiter.
基金The authors thank D.Berger,D.Hofmann and C.Kupka in IFW Dresden for helpful technical support.H.R.acknowledges funding from the DFG(Deutsche Forschungsgemeinschaft)within grant number RE3973/1-1.Q.J.,H.R.and K.N.conceived the work.With the support from N.Y.and X.J.,Q.J.and T.G.fabricated the thermoelectric films and conducted the structural and compositional characterizations.Q.J.prepared microchips and fabricated the on-chip micro temperature controllers.Q.J.and N.P.carried out the temperature-dependent material and device performance measurements.Q.J.and H.R.performed the simulation and analytical calculations.Q.J.,H.R.and K.N.wrote the manuscript with input from the other coauthors.All the authors discussed the results and commented on the manuscript.
文摘Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern microelectronics.However,this inevitably exac-erbates the inhomogeneity of temperature distribution in microsystems,making precise temperature control for electronic components extremely challenging.Herein,we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50×50μm^(2),which are fabricated from dense and flat freestanding Bi2Te3-based ther-moelectric nano films deposited on a newly developed nano graphene oxide membrane substrate.Its tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics.A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445μW,resulting in an ultrahigh temperature control capability over 100 K mW^(-1).Moreover,an ultra-fast cooling rate exceeding 2000 K s^(-1) and excellent reliability of up to 1 million cycles are observed.Our proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.
基金supported by the National Natural Science Foundation of China(22125903,22439003,22209175)the National Key R&D Program of China(Grant 2022YFA1504100,2023YFB4005204)+1 种基金the Energy Revolution S&T Program of Yulin Innovation Institute of Clean Energy(Grant E412010508)the State Key Laboratory of Catalysis(No:2024SKL-A-001)。
文摘Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configuration designs,ensuring precision,and facilitating scalability for mass production.Photolithography stands out as an ideal technology,leveraging its unparalleled resolution,exceptional design flexibility,and entrenched position within the mature semiconductor industry.However,comprehensive reviews on its application in MB development remain scarce.This review aims to bridge that gap by thoroughly assessing the recent status and promising prospects of photolithographic microfabrication for MBs.Firstly,we delve into the fundamental principles and step-by-step procedures of photolithography,offering a nuanced understanding of its operational mechanisms and the criteria for photoresist selection.Subsequently,we highlighted the specific roles of photolithography in the fabrication of MBs,including its utilization as a template for creating miniaturized micropatterns,a protective layer during the etching process,a mold for soft lithography,a constituent of MB active component,and a sacrificial layer in the construction of micro-Swiss-roll structure.Finally,the review concludes with a summary of the key challenges and future perspectives of MBs fabricated by photolithography,providing comprehensive insights and sparking research inspiration in this field.
基金Project supported by the National Undergraduate Training Projects for Innovation and Entrepreneurship (Grant No. 5003182007)the National Natural Science Foundation of China (Grant No. 12074137)+1 种基金the National Key Research and Development Project of China (Grant No. 2021YFB2801903)the Natural Science Foundation from the Science,Technology,and Innovation Commission of Shenzhen Municipality (Grant No. JCYJ20220530161010023)。
文摘Optical mode converters are essential for enhancing the capacity of optical communication systems. However, fabrication errors restrict the further improvement of conventional mode converters. To address this challenge, we have designed an on-chip TE0–TE1mode converter based on topologically protected waveguide arrays. The simulation results demonstrate that the converter exhibits a mode coupling efficiency of 93.5% near 1550 nm and can tolerate a relative fabrication error of 30%. Our design approach can be extended to enhance the robustness for other integrated photonic devices, beneficial for future development of optical network systems.
文摘A review on Terahertz end-to-end systems with an emphasis on integrated approaches is presented.Four major catalogs of THz integrated systems,including THz communication systems,THz imaging systems,THz radars,and THz spectroscopy systems,are reviewed in this article.The performance of integrated systems is compared with non-integrated solutions,followed by a discussion on the trend in future research avenues and applications.
