High-overload shocks are very likely to cause damage to the microstructure of MEMS devices, especially the continuous multiple high-overload shocks generated by the penetration of the multilayer target environment pos...High-overload shocks are very likely to cause damage to the microstructure of MEMS devices, especially the continuous multiple high-overload shocks generated by the penetration of the multilayer target environment pose more stringent challenges to its protective structure. In this study, the kinetic response model of the protective structure under single-pulse and continuous double-pulse impact is established,and a continuous double-pulse high overload impact test impact platform based on the sleeve-type bullet is constructed, and the protective performance of the multi-layer structure under multi-pulse is analyzed based on the acceleration decay ratio, and the results show that the protective performance of the structure has a positive correlation with its thickness, and it is not sensitive to the change of the load of the first impact;the first impact under double-pulse impact will cause damage to the microstructure through the superposition of the second impact. The first impact under double-pulse impact will cause an increase in the overload amplitude of the second impact through superposition;compared with the single-layer structure, the acceleration attenuation ratio of the double-layer structure can be increased by up to 26.13%, among which the epoxy-polyurethane combination has the best protection performance, with an acceleration attenuation ratio of up to 44.68%. This work provides a robust theoretical foundation and experimental basis for the reliable operation of MEMS devices, as well as for the design of protective structures in extreme environments.展开更多
The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide sy...The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems.Recently,however,the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations.Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice.This paper discusses recent advancements in the fabrication,adjustable physical properties,and various applications of freestanding oxide perovskite films.First,we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films.Second,we explore the main functionalities observed in freestanding perovskite oxide thin films,with special attention to the tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states.Next,we encapsulate three representative devices based on freestanding oxide films.Overall,this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics.展开更多
基金supported by Fund of the National Natural Science Foundation of China (Grant No. 52375553)。
文摘High-overload shocks are very likely to cause damage to the microstructure of MEMS devices, especially the continuous multiple high-overload shocks generated by the penetration of the multilayer target environment pose more stringent challenges to its protective structure. In this study, the kinetic response model of the protective structure under single-pulse and continuous double-pulse impact is established,and a continuous double-pulse high overload impact test impact platform based on the sleeve-type bullet is constructed, and the protective performance of the multi-layer structure under multi-pulse is analyzed based on the acceleration decay ratio, and the results show that the protective performance of the structure has a positive correlation with its thickness, and it is not sensitive to the change of the load of the first impact;the first impact under double-pulse impact will cause damage to the microstructure through the superposition of the second impact. The first impact under double-pulse impact will cause an increase in the overload amplitude of the second impact through superposition;compared with the single-layer structure, the acceleration attenuation ratio of the double-layer structure can be increased by up to 26.13%, among which the epoxy-polyurethane combination has the best protection performance, with an acceleration attenuation ratio of up to 44.68%. This work provides a robust theoretical foundation and experimental basis for the reliable operation of MEMS devices, as well as for the design of protective structures in extreme environments.
基金supported by the Fundamental Research Funds for the Central Universities(WK9990000102,WK2030000035).
文摘The study of oxide heteroepitaxy has been hindered by the issues of misfit strain and substrate clamping,which impede both the optimization of performance and the acquisition of a fundamental understanding of oxide systems.Recently,however,the development of freestanding oxide membranes has provided a plausible solution to these substrate limitations.Single-crystalline functional oxide films can be released from their substrates without incurring significant damage and can subsequently be transferred to any substrate of choice.This paper discusses recent advancements in the fabrication,adjustable physical properties,and various applications of freestanding oxide perovskite films.First,we present the primary strategies employed for the synthesis and transfer of these freestanding perovskite thin films.Second,we explore the main functionalities observed in freestanding perovskite oxide thin films,with special attention to the tunable functionalities and physical properties of these freestanding perovskite membranes under varying strain states.Next,we encapsulate three representative devices based on freestanding oxide films.Overall,this review highlights the potential of freestanding oxide films for the study of novel functionalities and flexible electronics.
