A power metal-oxide-semiconductor field-effect transistor(MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electri...A power metal-oxide-semiconductor field-effect transistor(MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.展开更多
碳化硅金属氧化物半导体场效应管(Si C MOSFET)和氮化镓高电子迁移率晶体管(GaN HEMT)这两种器件内部存在容易捕获电子的"陷阱",会影响导电沟道的性能,进而影响器件的导通电阻。对SiC MOSFET和GaN HEMT各选取了一款典型的商...碳化硅金属氧化物半导体场效应管(Si C MOSFET)和氮化镓高电子迁移率晶体管(GaN HEMT)这两种器件内部存在容易捕获电子的"陷阱",会影响导电沟道的性能,进而影响器件的导通电阻。对SiC MOSFET和GaN HEMT各选取了一款典型的商用器件,分别对Si C MOSFET和GaN HEMT的导通电阻可靠性进行了测试。测试结果表明,Si C MOSFET的导通电阻变化量相对小,且应力停止后导通电阻可以恢复到初始状态,这说明其界面态陷阱密度比GaN HEMT更低,因此实际应用中无需考虑导通电阻的稳定性;而GaN HEMT的动态电阻变化较大,这极大地增加了导通损耗,影响系统的可靠性,因此在实际应用中需要考虑导通电阻变化对导通性能的影响。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61404110)the National Higher-education Institution General Research and Development Project,China(Grant No.2682014CX097)
文摘A power metal-oxide-semiconductor field-effect transistor(MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.
文摘采用金属有机化学气相沉积（MOCVD）方法在（010）Fe掺杂半绝缘Ga2O3同质衬底上外延得到n型β-Ga2O3薄膜材料,材料结构包括400 nm的非故意掺杂Ga2O3缓冲层和40 nm的Si掺杂Ga2O3沟道层。基于掺杂浓度为2.0×1018cm-3的n型β-Ga2O3薄膜材料,采用原子层沉积的25 nm的HfO2作为栅下绝缘介质层,研制出Ga2O3金属氧化物半导体场效应晶体管（MOSFET）。器件展示出良好的电学特性,在栅偏压为8 V时,漏源饱和电流密度达到42 m A/mm,器件的峰值跨导约为3.8 m S/mm,漏源电流开关比达到108。此外,器件的三端关态击穿电压为113 V。采用场板结构并结合n型Ga2O3沟道层结构优化设计能进一步提升器件饱和电流和击穿电压等电学特性。
文摘碳化硅金属氧化物半导体场效应管(Si C MOSFET)和氮化镓高电子迁移率晶体管(GaN HEMT)这两种器件内部存在容易捕获电子的"陷阱",会影响导电沟道的性能,进而影响器件的导通电阻。对SiC MOSFET和GaN HEMT各选取了一款典型的商用器件,分别对Si C MOSFET和GaN HEMT的导通电阻可靠性进行了测试。测试结果表明,Si C MOSFET的导通电阻变化量相对小,且应力停止后导通电阻可以恢复到初始状态,这说明其界面态陷阱密度比GaN HEMT更低,因此实际应用中无需考虑导通电阻的稳定性;而GaN HEMT的动态电阻变化较大,这极大地增加了导通损耗,影响系统的可靠性,因此在实际应用中需要考虑导通电阻变化对导通性能的影响。
文摘针对智能MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)在汽车电子系统应用中遇到的问题,提出了相应的技术解决方案:针对智能MOSFET在电源反接、短路、过载以及抛负载工况下的损坏问题,提出了硬件保护电路及软件控制策略;针对智能MOSFET的电流反馈精度差,无法满足控制精度,提出通过标定提高检测精度的方法。通过并联智能MOSFET降低导通电阻,提高了回路的通流能力。通过在负载两端并联TVS(Transient Voltage Suppressor),解决了智能MOSFET钳位能量能力不足问题。通过试验及实车测试,验证了方案的可行性和有效性。
