Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shock...Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.展开更多
为提高局部阴影条件下光伏发电的能量利用率,提出一种改进型快速全局最大功率点跟踪(global maximum power point tracking,GMPPT)算法.首先,研究局部阴影条件下光伏阵列的输出特性,并根据光伏阵列输出曲线中膝点与开路电压的关系,将其...为提高局部阴影条件下光伏发电的能量利用率,提出一种改进型快速全局最大功率点跟踪(global maximum power point tracking,GMPPT)算法.首先,研究局部阴影条件下光伏阵列的输出特性,并根据光伏阵列输出曲线中膝点与开路电压的关系,将其划分为恒流区和恒压区;其次,分析传统的最大功率梯形(maximum power trapezium,MPT)算法和以MPT算法为基础的改进型快速GMPPT算法的工作原理,改进型快速GMPPT算法利用电压的动态上、下限来限定搜索区间,并跳过调整时间较长的恒流区,以提高跟踪速度;最后,通过仿真与实验验证算法的有效性.实验结果表明:改进型快速GMPPT算法的最短跟踪时间为4.0 s,扫描电压与能量损失分别为17.34 V和98.19 J;与传统全局扫描算法相比,跟踪时间缩短68.25%,扫描电压降低74.86%,能量损失减少58.19%;与MPT算法相比,跟踪时间缩短68.00%,扫描电压降低75.63%,能量损失减少62.31%.展开更多
为保障模块化串联结构电源系统的正常运行,探讨模块化串联结构电源系统中两级分组控制的故障检测策略。该方法通过优化模块化串联结构电源的故障反馈信号接收机制,引入基于最大功率点跟踪(Maximum Power Point Tracking,MPPT)的两级分...为保障模块化串联结构电源系统的正常运行,探讨模块化串联结构电源系统中两级分组控制的故障检测策略。该方法通过优化模块化串联结构电源的故障反馈信号接收机制,引入基于最大功率点跟踪(Maximum Power Point Tracking,MPPT)的两级分组控制直流孤岛检测技术。同时,设计故障判据,并优化检测结果输出流程。通过实际案例验证,文章提出的方法能够在短时间内精准检测出故障,从而显著提升电源系统的运行稳定性。展开更多
This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour depos...This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour deposition （MOCVD）. The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductanee was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61404115 and 61434006)the Postdoctoral Science Foundation of Henan Province,China(Grant No.2014006)the Development Fund for Outstanding Young Teachers of Zhengzhou University(Grant No.1521317004)
文摘Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.
文摘为提高局部阴影条件下光伏发电的能量利用率,提出一种改进型快速全局最大功率点跟踪(global maximum power point tracking,GMPPT)算法.首先,研究局部阴影条件下光伏阵列的输出特性,并根据光伏阵列输出曲线中膝点与开路电压的关系,将其划分为恒流区和恒压区;其次,分析传统的最大功率梯形(maximum power trapezium,MPT)算法和以MPT算法为基础的改进型快速GMPPT算法的工作原理,改进型快速GMPPT算法利用电压的动态上、下限来限定搜索区间,并跳过调整时间较长的恒流区,以提高跟踪速度;最后,通过仿真与实验验证算法的有效性.实验结果表明:改进型快速GMPPT算法的最短跟踪时间为4.0 s,扫描电压与能量损失分别为17.34 V和98.19 J;与传统全局扫描算法相比,跟踪时间缩短68.25%,扫描电压降低74.86%,能量损失减少58.19%;与MPT算法相比,跟踪时间缩短68.00%,扫描电压降低75.63%,能量损失减少62.31%.
文摘为保障模块化串联结构电源系统的正常运行,探讨模块化串联结构电源系统中两级分组控制的故障检测策略。该方法通过优化模块化串联结构电源的故障反馈信号接收机制,引入基于最大功率点跟踪(Maximum Power Point Tracking,MPPT)的两级分组控制直流孤岛检测技术。同时,设计故障判据,并优化检测结果输出流程。通过实际案例验证,文章提出的方法能够在短时间内精准检测出故障,从而显著提升电源系统的运行稳定性。
基金Project supported by the State Key Development Program for Basic Research of China (Grant No. G2002CB311901)Institute of Microelectronics,Chinese Academy of Sciences,Dean Fund (Grant No. 06SB124004)
文摘This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor （HEMT） grown by metal organic chemical vapour deposition （MOCVD）. The gate length of the metamorphic HEMT was 150 nm, the maximum current density was 330 mA/mm, the maximum transconductanee was 470 mS/mm, the threshold voltage was -0.6 V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102 GHz and 450 GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400 GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.
