A Van Hove singularity(VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases...A Van Hove singularity(VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.展开更多
A theoretical study on discrete vortex bound states is carried out near a vortex core in the presence of a van Hove singularity(VHS) near the Fermi level by solving Bogoliubov–de Gennes(Bd G) equations. When the VHS ...A theoretical study on discrete vortex bound states is carried out near a vortex core in the presence of a van Hove singularity(VHS) near the Fermi level by solving Bogoliubov–de Gennes(Bd G) equations. When the VHS lies exactly at the Fermi level and also at the middle of the band, a zero-energy state and other higher-energy states whose energy ratios follow integer numbers emerge. These discrete vortex bound state peaks undergo a splitting behavior when the VHS or Fermi level moves away from the middle of the band. Such splitting behavior will eventually lead to a new arrangement of quantized vortex core states whose energy ratios follow half-odd-integer numbers.展开更多
In this letter,we study the effects of the interlayer hopping and pairing of the layered high-T_(c) superconductors within tiie framework of BCS-van Hove singularity model.The obtained results are in qualitative agree...In this letter,we study the effects of the interlayer hopping and pairing of the layered high-T_(c) superconductors within tiie framework of BCS-van Hove singularity model.The obtained results are in qualitative agreement with the experiments.展开更多
The model of fractional-dimensional space is used to study dielectric function associated with electron interband transitions near a Van Hove critical point in anisotropic systems.Using fractional derivative spectra(F...The model of fractional-dimensional space is used to study dielectric function associated with electron interband transitions near a Van Hove critical point in anisotropic systems.Using fractional derivative spectra(FDS)method,it is found that in fractional-dimensional space only a minimum yields a symmetric Lorentzian line shape in FDS but a maximum does not.展开更多
Two-dimensional(2D)materials exhibit enhanced physical,chemical,electronic,and optical properties when compared to those of bulk materials.Graphene demands significant attention due to its superior physical and electr...Two-dimensional(2D)materials exhibit enhanced physical,chemical,electronic,and optical properties when compared to those of bulk materials.Graphene demands significant attention due to its superior physical and electronic characteristics among different types of 2D materials.The bilayer graphene is fabricated by the stacking of the two monolayers of graphene.The twisted bilayer graphene(tBLG)superlattice is formed when these layers are twisted at a small angle.The presence of disorders and interlayer interactions in tBLG enhances several characteristics,including the optical and electrical properties.The studies on twisted bilayer graphene have been exciting and challenging thus far,especially after superconductivity was reported in tBLG at the magic angle.This article reviews the current progress in the fabrication techniques of twisted bilayer graphene and its twisting angle-dependent properties.展开更多
Highly controlled electronic correlation in twisted graphene heterostructures has gained enormous research interests recently,encouraging exploration in a wide range of moirésuperlattices beyond the celebrated tw...Highly controlled electronic correlation in twisted graphene heterostructures has gained enormous research interests recently,encouraging exploration in a wide range of moirésuperlattices beyond the celebrated twisted bilayer graphene.Here we characterize correlated states in an alternating twisted Bernal bilayer–monolayer–monolayer graphene of~1.74°,and find that both van Hove singularities and multiple correlated states are asymmetrically tuned by displacement fields.In particular,when one electron per moiréunit cell is occupied in the electron-side flat band,or the hole-side flat band(i.e.,three holes per moiréunit cell),the correlated peaks are found to counterintuitively grow with heating and maximize around 20 K–a signature of Pomeranchuk effect.Our multilayer heterostructure opens more opportunities to engineer complicated systems for investigating correlated phenomena.展开更多
Moiré superlattices in van der Waals heterostructures have recently attracted enormous interests, due to the highly controllable electronic correlation that gives rise to superconductivity, ferromagnetism, and no...Moiré superlattices in van der Waals heterostructures have recently attracted enormous interests, due to the highly controllable electronic correlation that gives rise to superconductivity, ferromagnetism, and nontrivial topological properties. To gain a deep understanding of such exotic properties, it is essential to clarify the broken symmetry between spin and valley flavors which universally exists in these ground states. Here in a rhombohedral trilayer graphene crystallographically aligned with a hexagonal boron nitride, we report various kinds of symmetry-breaking transition tuned by displacement fields(D) and magnetic fields:(ⅰ) While it is well known that a finite D can enhance correlation to result in correlated insulators at fractional fillings of a flat band, we find the correlation gap emerges before the flavor is fully filled at a positive D, but the sequence is reversed at a negative D.(ⅱ) Around zero D, electronic correlation can be invoked by narrow Landau levels, leading to quantum Hall ferromagnetism that lifts all the degeneracies including not only spin and valley but also orbital degrees of freedom. Our result unveils the complication of transitions between symmetry-breaking phases, shedding light on the mechanisms of various exotic phenomena in strongly correlated systems.展开更多
Flat-band physics of moirésuperlattices,originally discovered in the celebrated twisted bilayer graphene,have recently been intensively explored in multilayer graphene systems that can be further controlled by el...Flat-band physics of moirésuperlattices,originally discovered in the celebrated twisted bilayer graphene,have recently been intensively explored in multilayer graphene systems that can be further controlled by electric field.In this work,we experimentally find the evidence of correlated insulators at half filling of the electron moiréband of twisted monolayer–trilayer graphene with a twist angle around 1.2°.Van Hove singularity(VHS),manifested as enhanced resistance and zero Hall voltage,is observed to be distinct in conduction and valence flat bands.It also depends on the direction and magnitude of the displacement fields,consistent with the asymmetric crystal structure.While the resistance ridges at VHS can be enhanced by magnetic fields,when they cross commensurate fillings of the moirésuperlattice in the conduction band,the enhancement is so strong that signatures of correlated insulator appear,which may further develop into an energy gap depending on the correlation strength.At last,Fermi velocity derived from temperature coefficients of resistivity is compared between conduction and valence bands with different displacement fields.It is found that electronic correlation has a negative dependence on the Fermi velocity,which in turn could be used to quantify the correlation strength.展开更多
The model dependence in the study of the magic-angle twisted bilayer-graphene(MA-TBG)is an important issue in the research area.It has been argued previously that the two-band tight-binding(TB)model(per spin and valle...The model dependence in the study of the magic-angle twisted bilayer-graphene(MA-TBG)is an important issue in the research area.It has been argued previously that the two-band tight-binding(TB)model(per spin and valley)cannot serve as a start point for succeeding studies as it cannot correctly describe the topological aspect of the continuumtheory model near the Dirac nodes in the mini Brillouin zone(MBZ).For this purpose,we adopt the faithful TB model[Phys.Rev.B 99195455(2019)]with five bands(per spin and valley)as our start point,which is further equipped with extended Hubbard interactions.Then after systematic random-phase-approximation(RPA)based calculations,we study the electron instabilities of this model,including the density wave(DW)and superconductivity(SC),near the van Hove singularity(VHS).Our results are as follows.In the case neglecting the tiny inter-valley exchange interaction,the exact SU(2)K×SU(2)K symmetry leads to the degeneracy between the inter-valley charge DW(CDW)and the spin DW(SDW)(which would be mixed then),and that between the singlet d+id-wave and triplet p+ip-wave topological SCs.When a realistic tiny inter-valley exchange interaction is turned on with nonzero coefficient(J_H=0),the SDW or CDW is favored respectively at the critical point,determined by JH→0-or JH→0+.In the mean time,the degeneracy between the singlet d+id-wave and triplet p+ip-wave topological SCs is also lifted up by the tiny JH.These results are highly similar to the results of our previous study[arXiv:2003.09513]adopting the two-band TB model,with the reason lying in that both models share the same symmetry and Fermi-surface(FS)nesting character near the VHS.Such a similarity suggests that the low-energy physics of the doped MA-TBG is mainly determined by the symmetry and the shape of the FS of the doped system,and is insensitive to other details of the band structure,including the topological aspects near the Dirac nodes in the MBZ.展开更多
基金supported by National Science Foundation of China (Grant No. 51472057)the Major Nanoprojects of Ministry of Science and Technology of China (2016YFA0200403)
文摘A Van Hove singularity(VHS) is a singularity in the phonon or electronic density of states of a crystalline solid. When the Fermi energy is close to the VHS, instabilities will occur, which can give rise to new phases of matter with desirable properties. However, the position of the VHS in the band structure cannot be changed in most materials. In this work, we demonstrate that the carrier densities required to approach the VHS are reached by gating in a suspended carbon nanotube Schottky barrier transistor. Critical saddle points were observed in regions of both positive and negative gate voltage, and the conductance flattened out when the gate voltage exceeded the critical value. These novel physical phenomena were evident when the temperature is below 100 K. Further, the temperature dependence of the electrical characteristics was also investigated in this type of Schottky barrier transistor.
基金the National Natural Science Foundation of China (Grant No. 11804154)the Scientific Research Foundation of NJIT (Grant Nos. YKJ201853 and CKJA201807)。
文摘A theoretical study on discrete vortex bound states is carried out near a vortex core in the presence of a van Hove singularity(VHS) near the Fermi level by solving Bogoliubov–de Gennes(Bd G) equations. When the VHS lies exactly at the Fermi level and also at the middle of the band, a zero-energy state and other higher-energy states whose energy ratios follow integer numbers emerge. These discrete vortex bound state peaks undergo a splitting behavior when the VHS or Fermi level moves away from the middle of the band. Such splitting behavior will eventually lead to a new arrangement of quantized vortex core states whose energy ratios follow half-odd-integer numbers.
文摘In this letter,we study the effects of the interlayer hopping and pairing of the layered high-T_(c) superconductors within tiie framework of BCS-van Hove singularity model.The obtained results are in qualitative agreement with the experiments.
文摘The model of fractional-dimensional space is used to study dielectric function associated with electron interband transitions near a Van Hove critical point in anisotropic systems.Using fractional derivative spectra(FDS)method,it is found that in fractional-dimensional space only a minimum yields a symmetric Lorentzian line shape in FDS but a maximum does not.
基金supported by the Basic Science Research Program(2017K1A3A1A1907045513)through the National Research Foundation of Korea(NRF)by the DGIST R&D programs(20-CoENT-01,20-BT-06),funded by the Ministry of Science and ICT。
文摘Two-dimensional(2D)materials exhibit enhanced physical,chemical,electronic,and optical properties when compared to those of bulk materials.Graphene demands significant attention due to its superior physical and electronic characteristics among different types of 2D materials.The bilayer graphene is fabricated by the stacking of the two monolayers of graphene.The twisted bilayer graphene(tBLG)superlattice is formed when these layers are twisted at a small angle.The presence of disorders and interlayer interactions in tBLG enhances several characteristics,including the optical and electrical properties.The studies on twisted bilayer graphene have been exciting and challenging thus far,especially after superconductivity was reported in tBLG at the magic angle.This article reviews the current progress in the fabrication techniques of twisted bilayer graphene and its twisting angle-dependent properties.
基金support from the National Key R&D Program of China (Grant Nos.2021YFA1400100 and 2019YFA0307800)the National Natural Science Foundation of China (Grant No.11974027)+2 种基金support from the National Natural Science Foundation of China (Grant No.62275265)Beijing Natural Science Foundation (Grant No.Z190011)Beijing Natural Science Foundation (Grant No.4222084)。
文摘Highly controlled electronic correlation in twisted graphene heterostructures has gained enormous research interests recently,encouraging exploration in a wide range of moirésuperlattices beyond the celebrated twisted bilayer graphene.Here we characterize correlated states in an alternating twisted Bernal bilayer–monolayer–monolayer graphene of~1.74°,and find that both van Hove singularities and multiple correlated states are asymmetrically tuned by displacement fields.In particular,when one electron per moiréunit cell is occupied in the electron-side flat band,or the hole-side flat band(i.e.,three holes per moiréunit cell),the correlated peaks are found to counterintuitively grow with heating and maximize around 20 K–a signature of Pomeranchuk effect.Our multilayer heterostructure opens more opportunities to engineer complicated systems for investigating correlated phenomena.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11974027 and 62275265)the National Key Research and Development Program of China (Grant Nos. 2019YFA0307800 and 2021YFA1400100)Beijing Natural Science Foundation (Grant Nos. Z190011 and 4222084)。
文摘Moiré superlattices in van der Waals heterostructures have recently attracted enormous interests, due to the highly controllable electronic correlation that gives rise to superconductivity, ferromagnetism, and nontrivial topological properties. To gain a deep understanding of such exotic properties, it is essential to clarify the broken symmetry between spin and valley flavors which universally exists in these ground states. Here in a rhombohedral trilayer graphene crystallographically aligned with a hexagonal boron nitride, we report various kinds of symmetry-breaking transition tuned by displacement fields(D) and magnetic fields:(ⅰ) While it is well known that a finite D can enhance correlation to result in correlated insulators at fractional fillings of a flat band, we find the correlation gap emerges before the flavor is fully filled at a positive D, but the sequence is reversed at a negative D.(ⅱ) Around zero D, electronic correlation can be invoked by narrow Landau levels, leading to quantum Hall ferromagnetism that lifts all the degeneracies including not only spin and valley but also orbital degrees of freedom. Our result unveils the complication of transitions between symmetry-breaking phases, shedding light on the mechanisms of various exotic phenomena in strongly correlated systems.
基金support from the National Natural Science Foundation of China(Grant No.11974027)the National Key R&D Program of China(Grant Nos.2019YFA0307800 and 2021YFA1400100)+2 种基金Beijing Natural Science Foundation(Grant No.Z190011)Beijing Natural Science Foundation(Grant No.4222084)support from the National Natural Science Foundation of China(Grant No.62275265)。
文摘Flat-band physics of moirésuperlattices,originally discovered in the celebrated twisted bilayer graphene,have recently been intensively explored in multilayer graphene systems that can be further controlled by electric field.In this work,we experimentally find the evidence of correlated insulators at half filling of the electron moiréband of twisted monolayer–trilayer graphene with a twist angle around 1.2°.Van Hove singularity(VHS),manifested as enhanced resistance and zero Hall voltage,is observed to be distinct in conduction and valence flat bands.It also depends on the direction and magnitude of the displacement fields,consistent with the asymmetric crystal structure.While the resistance ridges at VHS can be enhanced by magnetic fields,when they cross commensurate fillings of the moirésuperlattice in the conduction band,the enhancement is so strong that signatures of correlated insulator appear,which may further develop into an energy gap depending on the correlation strength.At last,Fermi velocity derived from temperature coefficients of resistivity is compared between conduction and valence bands with different displacement fields.It is found that electronic correlation has a negative dependence on the Fermi velocity,which in turn could be used to quantify the correlation strength.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674025,12074031,and 11674151)the National Key Research and Development Program of China(Grant No.2016YFA0300300)。
文摘The model dependence in the study of the magic-angle twisted bilayer-graphene(MA-TBG)is an important issue in the research area.It has been argued previously that the two-band tight-binding(TB)model(per spin and valley)cannot serve as a start point for succeeding studies as it cannot correctly describe the topological aspect of the continuumtheory model near the Dirac nodes in the mini Brillouin zone(MBZ).For this purpose,we adopt the faithful TB model[Phys.Rev.B 99195455(2019)]with five bands(per spin and valley)as our start point,which is further equipped with extended Hubbard interactions.Then after systematic random-phase-approximation(RPA)based calculations,we study the electron instabilities of this model,including the density wave(DW)and superconductivity(SC),near the van Hove singularity(VHS).Our results are as follows.In the case neglecting the tiny inter-valley exchange interaction,the exact SU(2)K×SU(2)K symmetry leads to the degeneracy between the inter-valley charge DW(CDW)and the spin DW(SDW)(which would be mixed then),and that between the singlet d+id-wave and triplet p+ip-wave topological SCs.When a realistic tiny inter-valley exchange interaction is turned on with nonzero coefficient(J_H=0),the SDW or CDW is favored respectively at the critical point,determined by JH→0-or JH→0+.In the mean time,the degeneracy between the singlet d+id-wave and triplet p+ip-wave topological SCs is also lifted up by the tiny JH.These results are highly similar to the results of our previous study[arXiv:2003.09513]adopting the two-band TB model,with the reason lying in that both models share the same symmetry and Fermi-surface(FS)nesting character near the VHS.Such a similarity suggests that the low-energy physics of the doped MA-TBG is mainly determined by the symmetry and the shape of the FS of the doped system,and is insensitive to other details of the band structure,including the topological aspects near the Dirac nodes in the MBZ.
