Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating p...Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating plasmonic tandem heterojunction with the hc-CdS/Mo_(2)C@C heterostructure is aimfully prepared for effectively promoting the charge separation kinetics of the CdS photocatalyst via the synergistic strategy of phase junction,Schottky junction,and photothermal effect.The difference in atomic configuration between cubic-CdS (c-CdS) and hexagonal-CdS (h-CdS) leads to effective charge separation through a typical Ⅱ charge transfer mechanism,and plasmonic Schottky junction further extracts the electrons in the hc-CdS phase junction to realize gradient charge transfer.Besides,the photothermal effect of Mo_(2)C@C helps to expand the light absorption,accelerate charge transfer kinetics,and reduce the hydrogen evolution energy barrier.The carbon layer provides a fast channel for charge transfer and protects the photocatalyst from photocorrosion.As a result,the optimized hc-CMC photocatalyst exhibits a significantly high photocatalytic H_(2)production activity of 28.63 mmol/g/h and apparent quantum efficiency of 61.8%,surpassing most of the reported photocatalysts.This study provides a feasible strategy to enhance the charge transfer kinetics and photocatalytic activity of CdS by constructing plasmonic tandem heterogeneous junctions.展开更多
In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence ...In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.展开更多
The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal percept...The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.展开更多
Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices.In this paper, we report the fabrication and optical investi...Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices.In this paper, we report the fabrication and optical investigation of large-scale chemical vapor deposition(CVD)-grown monolayer MoS2 and exfoliated few-layer GaS heterojunctions.As revealed by photoluminescence(PL) characterization, the as-fabricated heterojunctions demonstrated edge interaction between the two layers.The heterojunction was sensitive to annealing and showed increased interaction upon annealing at 300℃ under vacuum conditions, which led to changes in both the emission peak position and intensity resulting from the strong coupling interaction between the two layers.Low-temperature PL measurements further confirmed the strong coupling interaction.In addition, defect-related GaS luminescence was observed in our few-layer GaS, and the PL mapping provided evidence of edge interaction coupling between the two layers.These findings are interesting and provide the basis for creating new material systems with rich functionalities and novel physical effects.展开更多
An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivi...An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.展开更多
Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunc...Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.展开更多
g-C_(3)N_(4) emerges as a star 2D photocatalyst due to its unique layered structure,suitable band structure and low cost.However,its photocatalytic application is limited by the fast charge recombination and low photo...g-C_(3)N_(4) emerges as a star 2D photocatalyst due to its unique layered structure,suitable band structure and low cost.However,its photocatalytic application is limited by the fast charge recombination and low photoabsorption.Rationally designing g-C_(3)N_(4)-based heterojunction is promising for improving photocatalytic activity.Besides,g-C_(3)N_(4) exhibits great potentials in electrochemical energy storage.In view of the excellent performance of typical transition metal oxides(TMOs)in photocatalysis and energy storage,this review summarized the advances of TMOs/g-C_(3)N_(4) heterojunctions in the above two areas.Firstly,we introduce several typical TMOs based on their crystal structures and band structures.Then,we summarize different kinds of TMOs/g-C_(3)N_(4) heterojunctions,including type Ⅰ/Ⅱ heterojunction,Z-scheme,p-n junction and Schottky junction,with diverse photocatalytic applications(pollutant degradation,water splitting,CO_(2) reduction and N_(2) fixation)and supercapacitive energy storage.Finally,some promising strategies for improving the performance of TMOs/g-C_(3)N_(4) were proposed.Particularly,the exploration of photocatalysis-assisted supercapacitors was discussed.展开更多
High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dim...High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.展开更多
It is an urgent task to develop highly efficient non-noble metal electrocatalysts in the direction of ORR,but still a huge and long-term challenge.Herein,an efficient one-step pyrolysis of Sichuan pepper powder,2,2-bi...It is an urgent task to develop highly efficient non-noble metal electrocatalysts in the direction of ORR,but still a huge and long-term challenge.Herein,an efficient one-step pyrolysis of Sichuan pepper powder,2,2-bipyridine,FeCl3,Na SCN,and ZnCl2 at 900℃ provides the FeS/ZnS@N,S-C-900 hybrid catalyst.Transmission electron microscopy(TEM)images and Mott-Schottky curves clearly reveal the in-situ constructed abundant FeS/ZnS-based p-n junctions dispersed on the biomass-derived porous carbon surface of FeS/ZnS@N,S-C-900.The as-prepared FeS/ZnS@N,S-C-900 hybrid exhibits superior ORR performance in comparison with Pt/C in 0.1 M KOH with high onset(Eonset)and half-wave potentials(E1/2)of 1.00 and 0.880 V vs.RHE,large limiting current density(JL)of 5.60 mA cm-2,and robust durability and methanol tolerance.Impressively,upon the light irradiation,FeS/ZnS@N,S-C-900 produces a photocurrent as high as ca.0.3μA cm-2,resulting in further improvement over Eonset,E1/2,and JLof FeS/ZnS@N,S-C-900 to1.10 V vs.RHE,0.885 V vs.RHE,and 6.02 mA cm-2.Experiment in combination with theoretical calculations demonstrate the significant effect of FeS/ZnS heterojunction on the enhanced ORR catalytic activity of FeS/ZnS@N,S-C-900.This work is useful for the development of advanced heterojunction-based ORR catalysts for various energy conversion devices.展开更多
A multi-dimensional conductive heterojunction structure,composited by TiO2,SnO2,and Ti3C2TX MXene,is facilely designed and applied as electron transport layer in efficient and stable planar perovskite solar cells.Base...A multi-dimensional conductive heterojunction structure,composited by TiO2,SnO2,and Ti3C2TX MXene,is facilely designed and applied as electron transport layer in efficient and stable planar perovskite solar cells.Based on an oxygen vacancy scramble effect,the zero-dimensional anatase TiO2 quantum dots,surrounding on two-dimensional conductive Ti3C2TX sheets,are in situ rooted on three-dimensional SnO2 nanoparticles,constructing nanoscale TiO2/SnO2 heterojunctions.The fabrication is implemented in a controlled lowtemperature anneal method in air and then in N2 atmospheres.With the optimal MXene content,the optical property,the crystallinity of perovskite layer,and internal interfaces are all facilitated,contributing more amount of carrier with effective and rapid transferring in device.The champion power conversion efficiency of resultant perovskite solar cells achieves 19.14%,yet that of counterpart is just 16.83%.In addition,it can also maintain almost 85%of its initial performance for more than 45 days in 30–40%humidity air;comparatively,the counterpart declines to just below 75%of its initial performance.展开更多
Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues.Due to their simple structure and easy,low-temperature fabrication,h...Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues.Due to their simple structure and easy,low-temperature fabrication,heterojunctions of carbon nanotube(CNT)films and silicon(Si)have been used in solar cells,photodetectors and optoelectronic gas sensors.Significant progress has been made on the development of high-performance CNT/Si heterojunction devices,in particular,CNT/Si solar cells.Here,we give a comprehensive overview of state-of-theart CNT/Si heterojunction devices.The effects of the structure of the CNTs,the interface layer and the silicon structure on the performance of CNT/Si solar cells are analyzed.In addition,potential ways to further improve the performance of such photovoltaic devices are proposed.Finally,the key challenges and developing trends in CNT/Si heterojunction photovoltaic devices are discussed.展开更多
Defect and charge transfer efficiency of nano-photocatalysts are important factors which influence their photocatalytic performance.In this work,oxygen vacancies are successfully introduced in the synthesis process of...Defect and charge transfer efficiency of nano-photocatalysts are important factors which influence their photocatalytic performance.In this work,oxygen vacancies are successfully introduced in the synthesis process of Bi_(2)Al_(4)O_(9)/β-Bi_(2)O_(3)heterojunctions through one-step in situ selfcombustion method.High-resolution transmission electron microscopy (HRTEM),UV-Vis diffuse reflectance spectra (UV-Vis DRS),and electron spin resonance (ESR) measurements confirm the existence of oxygen vacancies.In addition,by controlling the ratio of reactants of Bi(NO_(3))_(3)to Al(NO_(3))_(3),the ratio of Bi_(2)Al_(4)O_(9)and β-Bi_(2)O_(3)in the heterojunction can be easily adjusted.Photocurrent responses and surface photovoltage spectroscopy (SPV) indicate that the construction of the Bi_(2)Al_(4)O_(9)/β-Bi_(2)O_(3)heterostructure improves the separation efficiency of the photo-generated electrons and holes.CO_(2)-TPD results imply that the amounts and stability of heterojunctions are enhanced compared with their counterparts.The Bi_(2)Al_(4)O_(9)/β-Bi_(2)O_(3)heterojunction with 14 mol%Bi_(2)Al_(4)O_(9)shows the highest photocatalytic ability for reduction of CO_(2)into CO.The enhanced photoreduction of CO_(2)performance can be ascribed to the synergistic effects of the heterojunction for electron separation and oxygen vacancies for CO_(2)activation.展开更多
The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/AlxGa1-xN heterojunctions under hydrostatic pressure and an external electric field is inv...The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/AlxGa1-xN heterojunctions under hydrostatic pressure and an external electric field is investigated by using a variational method and a simplified coherent potential approximation. The variations of Stark energy shift with electric field, impurity position, A1 component and areal electron density are discussed. Our results show that the screening dramatically reduces both the blue and red shifts as well as the binding energies of impurity states. For a given impurity position, the change in binding energy is more sensitive to the increase in hydrostatic pressure in the presence of the screening effect than that in the absence of the screening effect. The weakening of the blue and red shifts, induced by the screening effect, strengthens gradually with the increase of electric field. Furthermore, the screening effect weakens the mixture crystal effect, thereby influencing the Stark effect. The screening effect strengthens the influence of energy band bending on binding energy due to the areal electron density.展开更多
Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymm...Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105.Prominent solar-blind photoresponse effect is also observed in the formed heterojunction.The photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively)at zero bias.The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.展开更多
Solar cells that combine single-crystalline silicon （Si） with graphene （G） have been widely researched in order to develop next-generation photovoltaic devices. However, the power conversion efficiency （PCE） of ...Solar cells that combine single-crystalline silicon （Si） with graphene （G） have been widely researched in order to develop next-generation photovoltaic devices. However, the power conversion efficiency （PCE） of G/Si solar cell without chemical doping is commonly low due to the relatively high resistance of graphene. In this work, through combining graphene with carbon nanotube （CNT） networks, we fabricated three kinds of hybrid nanocarbon film/Si heterojunction solar cells in order to increase the PCE of the graphene based Si solar cell. We investigated the characteristics of different nanocarbon film/Si solar cells and found that their performance depends on the heterojunctions. Specifically, a doping-free G-CNT/Si solar cell demonstrated a high PCE of 7.9%, which is nearly equal to the combined value of two individuals （G/Si and CNT/Si）. This high efficiency is attributed to the synergistic effect of graphene and CNTs, and can be further increased to 9.1% after applying a PMMA antireflection coating. This study provides a potential way to further improve the Si based heterojunction solar cells.展开更多
Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this pap...Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.展开更多
Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current-voltage characteristics, and the distinct ...Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current-voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p-n heterojunction.展开更多
Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTi...Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTiO3 junctions, The barrier is extracted from the forward current-voltage characteristics. Our results demonstrate that the barrier decreases gradually from -0.85 eV to -0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.展开更多
We fabricate a kind of novel efficient blue fluorescent organic light emitting device（OLED） based on p-n heterojunctions composed of hole transporting layer（HTL） N,N ＇-bis（naphthalen-1-yl）-N,N ＇-bis（phenyl）-...We fabricate a kind of novel efficient blue fluorescent organic light emitting device（OLED） based on p-n heterojunctions composed of hole transporting layer（HTL） N,N ＇-bis（naphthalen-1-yl）-N,N ＇-bis（phenyl）-benzidine（NPB） and electron transporting layer（ETL） 4,7-diphnenyl-1,10-phenanthroline（BPhen）,into which a new blue material,DNCA（a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine）,is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency（η max） of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L＇Eclairage（CIE） coordinates of this device change slightly from（0.13,0.27） to（0.13,0.23） as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.展开更多
A series of Zn_（1-x）Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition（PLD）, successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_（1-x）...A series of Zn_（1-x）Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition（PLD）, successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_（1-x）Cd_xO films, x-ray diffraction（XRD）,ultraviolet-visible spectroscopy（UV-vis）, and x-ray photoelectron spectroscopy（XPS） are employed to characterize the films in detail. The XRD pattern indicates that the Zn_（1-x）Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration（x）according to the（αhν）~2–hν curve. Furthermore, the band offsets of Zn_（1-x）Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.展开更多
基金National Natural Science Foundation of China (Nos. 22371165, 22209098 and 21971143)111 Project (D20015)Opening Found of Hubei Three Gorges Laboratory (SC232001, SK213002)。
文摘Rational engineering of semiconductor photocatalysts for efficient hydrogen production is of great significance but still challenging,primarily due to the limitations in charge transfer kinetics.Herein,a fascinating plasmonic tandem heterojunction with the hc-CdS/Mo_(2)C@C heterostructure is aimfully prepared for effectively promoting the charge separation kinetics of the CdS photocatalyst via the synergistic strategy of phase junction,Schottky junction,and photothermal effect.The difference in atomic configuration between cubic-CdS (c-CdS) and hexagonal-CdS (h-CdS) leads to effective charge separation through a typical Ⅱ charge transfer mechanism,and plasmonic Schottky junction further extracts the electrons in the hc-CdS phase junction to realize gradient charge transfer.Besides,the photothermal effect of Mo_(2)C@C helps to expand the light absorption,accelerate charge transfer kinetics,and reduce the hydrogen evolution energy barrier.The carbon layer provides a fast channel for charge transfer and protects the photocatalyst from photocorrosion.As a result,the optimized hc-CMC photocatalyst exhibits a significantly high photocatalytic H_(2)production activity of 28.63 mmol/g/h and apparent quantum efficiency of 61.8%,surpassing most of the reported photocatalysts.This study provides a feasible strategy to enhance the charge transfer kinetics and photocatalytic activity of CdS by constructing plasmonic tandem heterogeneous junctions.
基金Project supported by the National Natural Science Foundation of China(Grant No.61874108)the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2024-04)the Gansu Provincial Scientific and Technologic Planning Program(Grant No.22ZD6GE016).
文摘In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.
基金supported by National Natural Science Foundation of China(No.51902250).
文摘The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11104250,61274099,and 11774313)the Science Technology Department of Zhejiang Province,China(Grant No.2012C21007)+1 种基金Zhejiang Province Innovation Team,China(Grant No.2011R50012)Zhejiang Provincial Natural Science Foundation,China(Grant No.LY17A040003)
文摘Fabrication of large-area atomically thin transition metal dichalcogenides is of critical importance for the preparation of new heterojunction-based devices.In this paper, we report the fabrication and optical investigation of large-scale chemical vapor deposition(CVD)-grown monolayer MoS2 and exfoliated few-layer GaS heterojunctions.As revealed by photoluminescence(PL) characterization, the as-fabricated heterojunctions demonstrated edge interaction between the two layers.The heterojunction was sensitive to annealing and showed increased interaction upon annealing at 300℃ under vacuum conditions, which led to changes in both the emission peak position and intensity resulting from the strong coupling interaction between the two layers.Low-temperature PL measurements further confirmed the strong coupling interaction.In addition, defect-related GaS luminescence was observed in our few-layer GaS, and the PL mapping provided evidence of edge interaction coupling between the two layers.These findings are interesting and provide the basis for creating new material systems with rich functionalities and novel physical effects.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 12261141662, 12074311, and 12004310)。
文摘An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.
基金Project supported by the Natural Science Foundation of Henan Province,China(Grant No.202300410304)the Key Research Project for Science and Technology of the Education Department of Henan Province,China(Grant No.21A140021)。
文摘Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.
基金financially supported by the National Natural Science Foundation (No.52072347, 51972288, 51672258 and 51572246)the Fundamental Research Funds for the Central Universities (No. 2652019144 and 2652018287)+1 种基金the financial supports from the Science and Technology Program of Guangdong Province (2019A050510012)Shenzhen Science, Technology and Innovation Commission (SGDX2019081623240364).
文摘g-C_(3)N_(4) emerges as a star 2D photocatalyst due to its unique layered structure,suitable band structure and low cost.However,its photocatalytic application is limited by the fast charge recombination and low photoabsorption.Rationally designing g-C_(3)N_(4)-based heterojunction is promising for improving photocatalytic activity.Besides,g-C_(3)N_(4) exhibits great potentials in electrochemical energy storage.In view of the excellent performance of typical transition metal oxides(TMOs)in photocatalysis and energy storage,this review summarized the advances of TMOs/g-C_(3)N_(4) heterojunctions in the above two areas.Firstly,we introduce several typical TMOs based on their crystal structures and band structures.Then,we summarize different kinds of TMOs/g-C_(3)N_(4) heterojunctions,including type Ⅰ/Ⅱ heterojunction,Z-scheme,p-n junction and Schottky junction,with diverse photocatalytic applications(pollutant degradation,water splitting,CO_(2) reduction and N_(2) fixation)and supercapacitive energy storage.Finally,some promising strategies for improving the performance of TMOs/g-C_(3)N_(4) were proposed.Particularly,the exploration of photocatalysis-assisted supercapacitors was discussed.
基金Project supported by National Science Funds for Creative Research Groups of China(Grant No.61421002)
文摘High-performance photodetectors are expected to open up revolutionary opportunities in many application fields, such as environment monitoring, military, optical communication and biomedical science. Combining two-dimensional materials(which have tunable optical absorption and high carrier mobility) with organic materials(which are abundant with low cost, high flexibility and large-area scalability) to form thin-film heterojunctions, high-responsivity photodetectors could be predicted with fast response speed in a wide spectra region.In this review, we give a comprehensive summary of photodetectors based on two-dimensional materials and organic thin-film heterojunctions, which includes hybrid assisted enhanced devices, single-layer enhanced devices, vertical heterojunction devices and tunable vertical heterojunction devices. We also give a systematic classification and perspectives on the future development of these types of photodetectors.
基金Financial support from the National Natural Science Foundation of China (Nos.21631003,21771192,and 21871024)the Fundamental Research Funds for the Central Universities (No.FRF-BR-18–009B)。
文摘It is an urgent task to develop highly efficient non-noble metal electrocatalysts in the direction of ORR,but still a huge and long-term challenge.Herein,an efficient one-step pyrolysis of Sichuan pepper powder,2,2-bipyridine,FeCl3,Na SCN,and ZnCl2 at 900℃ provides the FeS/ZnS@N,S-C-900 hybrid catalyst.Transmission electron microscopy(TEM)images and Mott-Schottky curves clearly reveal the in-situ constructed abundant FeS/ZnS-based p-n junctions dispersed on the biomass-derived porous carbon surface of FeS/ZnS@N,S-C-900.The as-prepared FeS/ZnS@N,S-C-900 hybrid exhibits superior ORR performance in comparison with Pt/C in 0.1 M KOH with high onset(Eonset)and half-wave potentials(E1/2)of 1.00 and 0.880 V vs.RHE,large limiting current density(JL)of 5.60 mA cm-2,and robust durability and methanol tolerance.Impressively,upon the light irradiation,FeS/ZnS@N,S-C-900 produces a photocurrent as high as ca.0.3μA cm-2,resulting in further improvement over Eonset,E1/2,and JLof FeS/ZnS@N,S-C-900 to1.10 V vs.RHE,0.885 V vs.RHE,and 6.02 mA cm-2.Experiment in combination with theoretical calculations demonstrate the significant effect of FeS/ZnS heterojunction on the enhanced ORR catalytic activity of FeS/ZnS@N,S-C-900.This work is useful for the development of advanced heterojunction-based ORR catalysts for various energy conversion devices.
基金supported by the Science & Technology Project of Anhui Province (16030701091)the Natural Science Research Project of Anhui Provincial Education Department (KJ2019A0030)+2 种基金the Support Project of Outstanding Young Talents in Anhui Provincial Universities (gxyqZD2018006)the National Natural Science Foundation of China(11704002, 31701323)the Anhui Provincial Natural Science Foundation (1908085QF251,1808085MF185)
文摘A multi-dimensional conductive heterojunction structure,composited by TiO2,SnO2,and Ti3C2TX MXene,is facilely designed and applied as electron transport layer in efficient and stable planar perovskite solar cells.Based on an oxygen vacancy scramble effect,the zero-dimensional anatase TiO2 quantum dots,surrounding on two-dimensional conductive Ti3C2TX sheets,are in situ rooted on three-dimensional SnO2 nanoparticles,constructing nanoscale TiO2/SnO2 heterojunctions.The fabrication is implemented in a controlled lowtemperature anneal method in air and then in N2 atmospheres.With the optimal MXene content,the optical property,the crystallinity of perovskite layer,and internal interfaces are all facilitated,contributing more amount of carrier with effective and rapid transferring in device.The champion power conversion efficiency of resultant perovskite solar cells achieves 19.14%,yet that of counterpart is just 16.83%.In addition,it can also maintain almost 85%of its initial performance for more than 45 days in 30–40%humidity air;comparatively,the counterpart declines to just below 75%of its initial performance.
基金supported by the Ministry of Science and Technology of China (Grant 2016YFA0200101)the National Natural Science Foundation of China (Grants 51625203, 51532008, 51521091, 51572264, 51772303)the Chinese Academy of Sciences (Grants 174321KYSB20160011)
文摘Photovoltaic devices have rapidly developed in recent years as they seek to address the ever-increasing energy requirements and environmental issues.Due to their simple structure and easy,low-temperature fabrication,heterojunctions of carbon nanotube(CNT)films and silicon(Si)have been used in solar cells,photodetectors and optoelectronic gas sensors.Significant progress has been made on the development of high-performance CNT/Si heterojunction devices,in particular,CNT/Si solar cells.Here,we give a comprehensive overview of state-of-theart CNT/Si heterojunction devices.The effects of the structure of the CNTs,the interface layer and the silicon structure on the performance of CNT/Si solar cells are analyzed.In addition,potential ways to further improve the performance of such photovoltaic devices are proposed.Finally,the key challenges and developing trends in CNT/Si heterojunction photovoltaic devices are discussed.
基金financial support from the National Natural Science Foundation of China(21776059,21376061)the Natural Science Foundation for Distinguished Young Scholars of Hebei Province(B2015208010)the Research Foundation of Hebei Province Education Department(No.ZC2016007)。
文摘Defect and charge transfer efficiency of nano-photocatalysts are important factors which influence their photocatalytic performance.In this work,oxygen vacancies are successfully introduced in the synthesis process of Bi_(2)Al_(4)O_(9)/β-Bi_(2)O_(3)heterojunctions through one-step in situ selfcombustion method.High-resolution transmission electron microscopy (HRTEM),UV-Vis diffuse reflectance spectra (UV-Vis DRS),and electron spin resonance (ESR) measurements confirm the existence of oxygen vacancies.In addition,by controlling the ratio of reactants of Bi(NO_(3))_(3)to Al(NO_(3))_(3),the ratio of Bi_(2)Al_(4)O_(9)and β-Bi_(2)O_(3)in the heterojunction can be easily adjusted.Photocurrent responses and surface photovoltage spectroscopy (SPV) indicate that the construction of the Bi_(2)Al_(4)O_(9)/β-Bi_(2)O_(3)heterostructure improves the separation efficiency of the photo-generated electrons and holes.CO_(2)-TPD results imply that the amounts and stability of heterojunctions are enhanced compared with their counterparts.The Bi_(2)Al_(4)O_(9)/β-Bi_(2)O_(3)heterojunction with 14 mol%Bi_(2)Al_(4)O_(9)shows the highest photocatalytic ability for reduction of CO_(2)into CO.The enhanced photoreduction of CO_(2)performance can be ascribed to the synergistic effects of the heterojunction for electron separation and oxygen vacancies for CO_(2)activation.
基金Project supported by the National Natural Science Foundation of China (Grant No 60566002)the Specialized Research Fundfor the Doctoral Program of Higher Education of China (Grant No 20070126001)
文摘The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/AlxGa1-xN heterojunctions under hydrostatic pressure and an external electric field is investigated by using a variational method and a simplified coherent potential approximation. The variations of Stark energy shift with electric field, impurity position, A1 component and areal electron density are discussed. Our results show that the screening dramatically reduces both the blue and red shifts as well as the binding energies of impurity states. For a given impurity position, the change in binding energy is more sensitive to the increase in hydrostatic pressure in the presence of the screening effect than that in the absence of the screening effect. The weakening of the blue and red shifts, induced by the screening effect, strengthens gradually with the increase of electric field. Furthermore, the screening effect weakens the mixture crystal effect, thereby influencing the Stark effect. The screening effect strengthens the influence of energy band bending on binding energy due to the areal electron density.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,61774019,61704153,and 11404029)the Fund from the State Key Laboratory of Information Photonics and Optical Communications(BUPT),Chinathe Fundamental Research Funds for the Central Universities,China
文摘Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method.The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 105.Prominent solar-blind photoresponse effect is also observed in the formed heterojunction.The photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively)at zero bias.The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.
基金Project supported by the National Key R&D Program of China(Grant No.2018YFA0208402)the National Basic Research Program of China(Grant No.2012CB932302)+1 种基金the National Natural Science Foundation of China(Grant Nos.11634014,51172271,and 51372269)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDA09040202)
文摘Solar cells that combine single-crystalline silicon （Si） with graphene （G） have been widely researched in order to develop next-generation photovoltaic devices. However, the power conversion efficiency （PCE） of G/Si solar cell without chemical doping is commonly low due to the relatively high resistance of graphene. In this work, through combining graphene with carbon nanotube （CNT） networks, we fabricated three kinds of hybrid nanocarbon film/Si heterojunction solar cells in order to increase the PCE of the graphene based Si solar cell. We investigated the characteristics of different nanocarbon film/Si solar cells and found that their performance depends on the heterojunctions. Specifically, a doping-free G-CNT/Si solar cell demonstrated a high PCE of 7.9%, which is nearly equal to the combined value of two individuals （G/Si and CNT/Si）. This high efficiency is attributed to the synergistic effect of graphene and CNTs, and can be further increased to 9.1% after applying a PMMA antireflection coating. This study provides a potential way to further improve the Si based heterojunction solar cells.
基金Project supported by the Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University,China(Grant No.2020-52000083-01-324061)the National Natural Science Foundation of China(Grant No.61264004)the High-level Creative Talent Training Program in Guizhou Province,China(Grant No.[2015]4015)。
文摘Reducing the Schottky barrier height(SBH)and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices.In this paper,the modulation effects of biaxial strain on the electronic properties and Schottky barrier of Mo Si_(2)N_(4)(MSN)/graphene and WSi_(2)N_(4)(WSN)/graphene heterojunctions are examined by using first principles calculations.After the construction of heterojunctions,the electronic structures of MSN,WSN,and graphene are well preserved.Herein,we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN—an emerging two-dimensional(2D)semiconductor family with excellent mechanical properties—and graphene,the heterojunction can be transformed from Schottky ptype contacts into n-type contacts,even highly efficient Ohmic contacts,making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals(vd W)heterojunctions.Not only are these findings invaluable for designing high-performance graphene-based electronic devices,but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts,or between Schottky contacts and Ohmic contacts.
基金supported by the Fundamental Research Funds for the Central Universities,China (Grant No. 2010ZY50)the Science and Technology Foundation for Young Teachers of China University of Geosciences (Beijing,China) (Grant No. 51900961132)
文摘Three oxide heterojunctions made of LaAlO3-δ/Si are fabricated under various oxygen pressures by laser molecular-beam epitaxy. They all show nonlinear and rectifying current-voltage characteristics, and the distinct difference in rectification behaviour among them. Their photoelectric properties are examined by a visible HeNe laser and an ultraviolet Hg lamp. We find that their photovoltaic responses are closely related to the oxygen contents in the LaAlO3-δ films. The junction fabricated under the lower oxygen pressure has a higher photovoltaic sensitivity. The possible mechanism is suggested based on the band structure of the p-n heterojunction.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10804094,50832007,50721001 and 50821001)the Natural Science Foundation of Hebei Province,China (Grant No. A2009000339)
文摘Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTiO3 junctions, The barrier is extracted from the forward current-voltage characteristics. Our results demonstrate that the barrier decreases gradually from -0.85 eV to -0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60876046)the Tianjin Natural Science Foundation,China (Grant No. 10JCYBJC01100)
文摘We fabricate a kind of novel efficient blue fluorescent organic light emitting device（OLED） based on p-n heterojunctions composed of hole transporting layer（HTL） N,N ＇-bis（naphthalen-1-yl）-N,N ＇-bis（phenyl）-benzidine（NPB） and electron transporting layer（ETL） 4,7-diphnenyl-1,10-phenanthroline（BPhen）,into which a new blue material,DNCA（a derivation of N 6,N 6,N 12,N 12-tetrap-tolylchrysene-6,12-diamine）,is partially doped simultaneously,and double emitting layers are configured.With a turn-on voltage of 2.6 V at 1 cd/m 2,this type of OLED presents a maximum luminance efficiency（η max） of 8.83 cd/A at 5.818 mA/cm 2 and a maximum luminance of over 40000 cd/m 2.Meanwhile,the Commission Internationale De L＇Eclairage（CIE） coordinates of this device change slightly from（0.13,0.27） to（0.13,0.23） as the driving voltage increases from 3 V to 11 V.This improvement in the electroluminescent characteristics is attributed mainly to the ideal p-n heterojunction which can confine and distribute excitons evenly on two sides of the heterojunction interface so as to improve the carrier combination rate and expand the light-emitting region.
基金supported by the National Natural Science Foundation of China(Grant No.11404302)the Laser Fusion Research Center Funds for Young Talents(Grant No.RCFPD1-2017-9)
文摘A series of Zn_（1-x）Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition（PLD）, successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_（1-x）Cd_xO films, x-ray diffraction（XRD）,ultraviolet-visible spectroscopy（UV-vis）, and x-ray photoelectron spectroscopy（XPS） are employed to characterize the films in detail. The XRD pattern indicates that the Zn_（1-x）Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration（x）according to the（αhν）~2–hν curve. Furthermore, the band offsets of Zn_（1-x）Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.
