This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃...This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃nian in conjunction with a scattering matrix method,the model effectively incorporates quantum confinement,strain effects,and interface states.This robust and numerically stable approach achieves exceptional agreement with experimental data,offering a reliable tool for analyzing and engineering the band structure of complex multi⁃layer systems.展开更多
文摘This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃nian in conjunction with a scattering matrix method,the model effectively incorporates quantum confinement,strain effects,and interface states.This robust and numerically stable approach achieves exceptional agreement with experimental data,offering a reliable tool for analyzing and engineering the band structure of complex multi⁃layer systems.
