Quasi-bound state in the continuum(QBIC)resonance is gradually attracting attention and being applied in Goos-Hänchen(GH)shift enhancement due to its high quality(Q)factor and superior optical confinement.Current...Quasi-bound state in the continuum(QBIC)resonance is gradually attracting attention and being applied in Goos-Hänchen(GH)shift enhancement due to its high quality(Q)factor and superior optical confinement.Currently,symmetry-protected QBIC resonance is often achieved by breaking the geometric symmetry,but few cases are achieved by breaking the material symmetry.This paper proposes a dielectric compound grating to achieve a high Q factor and high-reflection symmetry-protectede QBIC resonance based on material asymmetry.Theoretical calculations show that the symmetry-protected QBIC resonance achieved by material asymmetry can significantly increase the GH shift up to-980 times the resonance wavelength,and the maximum GH shift is located at the reflection peak with unity reflectance.This paper provides a theoretical basis for designing and fabricating high-performance GH shift tunable metasurfaces/dielectric gratings in the future.展开更多
The Goos-H？nchen（GH） shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified O...The Goos-H？nchen（GH） shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified Otto configuration.It is shown that the GH shift can be positive or negative, and can be enhanced by introducing a nonlinearity in the substrate.Large and bistable GH shifts are demonstrated to be due to the hysteretic behavior of the reflectance phase. The bistable GH shift can be manipulated by changing the thickness of the air gap and the Fermi level or relaxation time of graphene.展开更多
We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping fi...We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.展开更多
Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depe...Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.展开更多
We investigated Goos-Hänchen(GH)and Imbert-Fedorov(IF)shifts of a reflective beam on a twisted bilayer of hexagonal boron nitride(hBN),where a left circularly polarized beam was incident on the surface.Our result...We investigated Goos-Hänchen(GH)and Imbert-Fedorov(IF)shifts of a reflective beam on a twisted bilayer of hexagonal boron nitride(hBN),where a left circularly polarized beam was incident on the surface.Our results demonstrate that the twist angle between the two optical axes plays an important role in obtaining large shifts with a high reflectivity.The GH shift with 10λ_(0) is achieved,while the reflectivity is near 100%by tuning the twist angle.The maximum of the IF shift is found in the certain condition satisfied by the reflective coefficients,and the shift strongly depends on the twist angle between the optical axes of the two slabs.The spatial shifts obtained directly from the GH and IF shift definitions were provided,which indicate that the theoretical results from the stationary phase method are believable.These results may open up a new way for developing the nano-optical devices.展开更多
This paper reports that Goos-Hǎnchen （GH） shifts occurring on a symmetrical metal-cladding waveguide are experimentally identified. It was found that there exists a critical thickness of the upper metal layer, hcr,...This paper reports that Goos-Hǎnchen （GH） shifts occurring on a symmetrical metal-cladding waveguide are experimentally identified. It was found that there exists a critical thickness of the upper metal layer, hcr, above which negative shift is observed and, reversely, positive shift occurs. Both positive and negative GH shifts near the critical thickness do not vary dramatically and can achieve a maximum on the submillimeter scale, which is different from simulated results using the stationary-phase method. It also shows that this critical thickness, hcr, can be obtained at the position for zero reflectivity by setting the intrinsic damping to be the same as the radiative damping. The GH effects observed near the critical thickness are produced by extreme distortion of the reflected beam profiles, which limits the amplitude of the GH shift and, further, the sensitivity of the GH optical sensor based on the symmetrical metal-cladding waveguide.展开更多
基金Project supported by the Zhejiang Provincial Natural Science Foundation of China(Grant No.LQ23F040001)the National Natural Science Foundation of China(Grant No.12204446)+1 种基金the Public Welfare Technology Research Project of Zhejiang Province(Grant No.LGC22E050006)the Quzhou Science and Technology Project of China(Grant No.2022K104).
文摘Quasi-bound state in the continuum(QBIC)resonance is gradually attracting attention and being applied in Goos-Hänchen(GH)shift enhancement due to its high quality(Q)factor and superior optical confinement.Currently,symmetry-protected QBIC resonance is often achieved by breaking the geometric symmetry,but few cases are achieved by breaking the material symmetry.This paper proposes a dielectric compound grating to achieve a high Q factor and high-reflection symmetry-protectede QBIC resonance based on material asymmetry.Theoretical calculations show that the symmetry-protected QBIC resonance achieved by material asymmetry can significantly increase the GH shift up to-980 times the resonance wavelength,and the maximum GH shift is located at the reflection peak with unity reflectance.This paper provides a theoretical basis for designing and fabricating high-performance GH shift tunable metasurfaces/dielectric gratings in the future.
基金Project supported by the National Natural Science Foundation of China(Grant No.61505111).
文摘The Goos-H？nchen（GH） shift of graphene in the terahertz frequency range is investigated, and an extremely high GH shift is obtained owing to the excitation of surface plasmon resonance in graphene in the modified Otto configuration.It is shown that the GH shift can be positive or negative, and can be enhanced by introducing a nonlinearity in the substrate.Large and bistable GH shifts are demonstrated to be due to the hysteretic behavior of the reflectance phase. The bistable GH shift can be manipulated by changing the thickness of the air gap and the Fermi level or relaxation time of graphene.
文摘We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.
基金Project supported by the National Natural Science Foundation of China(Grant No.62164005).
文摘Combining theory and computation,we explore the Goos–H¨anchen(GH)effect for electrons in a single-layered semiconductor microstructure(SLSM)modulated by Dresselhaus spin–orbit coupling(SOC).GH displacement depends on electron spins thanks to Dresselhaus SOC,therefore electron spins can be separated from the space domain and spinpolarized electrons in semiconductors can be realized.Both the magnitude and sign of the spin polarization ratio change with the electron energy,in-plane wave vector,strain engineering and semiconductor layer thickness.The spin polarization ratio approaches a maximum at resonance;however,no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector.More importantly,the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness,giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.
基金supported by the Natural Science Foundation of Heilongjiang Province,China(Grant No.LH2020A014)Harbin Normal University Fund(Grant No.HSDSSCX202127)Education Commission of Heilongjiang Province,China(Grant No.2020-KYYWF352)。
文摘We investigated Goos-Hänchen(GH)and Imbert-Fedorov(IF)shifts of a reflective beam on a twisted bilayer of hexagonal boron nitride(hBN),where a left circularly polarized beam was incident on the surface.Our results demonstrate that the twist angle between the two optical axes plays an important role in obtaining large shifts with a high reflectivity.The GH shift with 10λ_(0) is achieved,while the reflectivity is near 100%by tuning the twist angle.The maximum of the IF shift is found in the certain condition satisfied by the reflective coefficients,and the shift strongly depends on the twist angle between the optical axes of the two slabs.The spatial shifts obtained directly from the GH and IF shift definitions were provided,which indicate that the theoretical results from the stationary phase method are believable.These results may open up a new way for developing the nano-optical devices.
基金Project supported by the Research Fund for Selecting and Training Excellent Young Teachers in Universities of Shanghai, Shanghai Municipal Education Commission (Grant No slg08006)"Chen Guang" project of Shanghai Municipal Education Commission and Shanghai Education Development Foundation (Grant No 09CG49)+2 种基金Dawn Project of Education Committee of Shanghai and Shanghai Education Development Foundation (Grant No 08SG48)Innovation Program of Shanghai Municipal Education Commission (Grant No 09YZ221)the Program from Shanghai Committee of Science and Technology, China (Grant Nos 07DZ22026 and 08ZR1415400)
文摘This paper reports that Goos-Hǎnchen （GH） shifts occurring on a symmetrical metal-cladding waveguide are experimentally identified. It was found that there exists a critical thickness of the upper metal layer, hcr, above which negative shift is observed and, reversely, positive shift occurs. Both positive and negative GH shifts near the critical thickness do not vary dramatically and can achieve a maximum on the submillimeter scale, which is different from simulated results using the stationary-phase method. It also shows that this critical thickness, hcr, can be obtained at the position for zero reflectivity by setting the intrinsic damping to be the same as the radiative damping. The GH effects observed near the critical thickness are produced by extreme distortion of the reflected beam profiles, which limits the amplitude of the GH shift and, further, the sensitivity of the GH optical sensor based on the symmetrical metal-cladding waveguide.
