This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conv...This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conversion of laser energy into THz waves.Through meticulous investigation,valuable insights into optimizing THz generation processes for practical applications were unearthed.By investigating Hertz potentials,an eigen-value equation for the solutions of the guided modes(i.e.,eigenvalues)was found.The effects of various param-eters,including the effective mode index and the laser pulse power,on the electric field components of THz radia-tion,including the fundamental TE(transverse electric)and TM(transverse magnetic)modes,were evaluated.By analyzing these factors,this research elucidated the nuanced mechanisms governing THz wave generation within cylindrical GaAs waveguides,paving the way for refined methodologies and enhanced efficiency.The sig-nificance of cylindrical GaAs waveguides extends beyond their roles as mere facilitators of THz generation;their design and fabrication hold the key to unlocking the potential for compact and portable THz systems.This trans-formative capability not only amplifies the efficiency of THz generation but also broadens the horizons of practical applications.展开更多
GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nan...GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
文摘This study involved a comprehensive investigation aimed at achieving efficient multi-millijoule THz wave generation by exploiting the unique properties of cylindrical GaAs waveguides as effective mediators of the conversion of laser energy into THz waves.Through meticulous investigation,valuable insights into optimizing THz generation processes for practical applications were unearthed.By investigating Hertz potentials,an eigen-value equation for the solutions of the guided modes(i.e.,eigenvalues)was found.The effects of various param-eters,including the effective mode index and the laser pulse power,on the electric field components of THz radia-tion,including the fundamental TE(transverse electric)and TM(transverse magnetic)modes,were evaluated.By analyzing these factors,this research elucidated the nuanced mechanisms governing THz wave generation within cylindrical GaAs waveguides,paving the way for refined methodologies and enhanced efficiency.The sig-nificance of cylindrical GaAs waveguides extends beyond their roles as mere facilitators of THz generation;their design and fabrication hold the key to unlocking the potential for compact and portable THz systems.This trans-formative capability not only amplifies the efficiency of THz generation but also broadens the horizons of practical applications.
文摘GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
