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Study on multi-wavelength thin film thickness determination method
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作者 SHI Ce XIE Mao-Bin +3 位作者 ZHENG Wei-Bo JI Ruo-Nan WANG Shao-Wei LU Wei 《红外与毫米波学报》 CSCD 北大核心 2024年第6期813-819,共7页
This work introduces a novel method for measuring thin film thickness,employing a multi-wavelength method that significantly reduces the need for broad-spectrum data.Unlike traditional techniques that require sev⁃eral... This work introduces a novel method for measuring thin film thickness,employing a multi-wavelength method that significantly reduces the need for broad-spectrum data.Unlike traditional techniques that require sev⁃eral hundred spectral data points,the multi-wavelength method achieves precise thickness measurements with data from only 10 wavelengths.This innovation not only simplifies the process of spectral measurement analysis but also enables accurate real-time thickness measurement on industrial coating production lines.The method effectively reconstructs and fits the visible spectrum(400-800 nm)using a minimal amount of data,while maintaining measurement error within 7.1%.This advancement lays the foundation for more practical and efficient thin film thickness determination techniques in various industrial applications. 展开更多
关键词 film thickness determination transmittance and reflectance spectra FITTING spectral reconstruction
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Erratum to “Accurate determination of film thickness by low-angle x-ray reflection”
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作者 Ming Xu Tao Yang +5 位作者 Wenxue Yu Ning Yang Cuixiu Liu Zhenhong Mai Wuyan Lai Kun Tao 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期658-658,共1页
Equation(6)in Chin.Phys.090833(2000)is corrected.All subsequent derivations were given based on the correct Eq.(6),so the conclusions in the paper are not ffected by the rrata.
关键词 erratum film thickness X-RAY
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Method of measuring one-dimensional photonic crystal period-structure-film thickness based on Bloch surface wave enhanced Goos–H?nchen shift
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作者 郎垚璞 刘庆纲 +2 位作者 王奇 周兴林 贾光一 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第1期545-552,共8页
This paper puts forward a novel method of measuring the thin period-structure-film thickness based on the Bloch surface wave(BSW) enhanced Goos–Hanchen(GH) shift in one-dimensional photonic crystal(1DPC). The BSW phe... This paper puts forward a novel method of measuring the thin period-structure-film thickness based on the Bloch surface wave(BSW) enhanced Goos–Hanchen(GH) shift in one-dimensional photonic crystal(1DPC). The BSW phenomenon appearing in 1DPC enhances the GH shift generated in the attenuated total internal reflection structure. The GH shift is closely related to the thickness of the film which is composed of layer-structure of 1DPC. The GH shifts under multiple different incident light conditions will be obtained by varying the wavelength and angle of the measured light, and the thickness distribution of the entire structure of 1DPC is calculated by the particle swarm optimization(PSO) algorithm.The relationship between the structure of a 1DPC film composed of TiO_(2) and SiO_(2) layers and the GH shift, is investigated.Under the specific photonic crystal structure and incident conditions, a giant GH shift, 5.1 × 10^(3) times the wavelength of incidence, can be obtained theoretically. Simulation and calculation results show that the thickness of termination layer and periodic structure bilayer of 1DPC film with 0.1-nm resolution can be obtained by measuring the GH shifts. The exact structure of a 1DPC film is innovatively measured by the BSW-enhanced GH shift. 展开更多
关键词 thin film thickness Bloch surface wave(BSW) Goos–H?nchen shift photonic crystal
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Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories
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作者 郭婷婷 谭婷婷 刘正堂 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第1期125-128,共4页
Cu/HfOx/n^+Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of swit... Cu/HfOx/n^+Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching (RS) characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects (oxygen vacancies) in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12:3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model. 展开更多
关键词 Effects of film thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories
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Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition 被引量:1
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作者 王少青 程妮妮 +6 位作者 王海安 贾一凡 陆芹 宁静 郝跃 刘祥泰 陈海峰 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第4期707-713,共7页
Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better cr... Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly. 展开更多
关键词 β-Ga_(2)O_(3) film thickness solar blind photodetectors photoelectric response
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Effect of substrate curvature on thickness distribution of polydimethylsiloxane thin film in spin coating process
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作者 Ying Yan Ping Zhou +2 位作者 Shang-Xiong Zhang Xiao-Guang Guo Dong-Ming Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第6期479-487,共9页
The polymer spin coating is critical in flexible electronic manufaction and micro-electro-mechanical system(MEMS)devices due to its simple operation, and uniformly coated layers. Some researchers focus on the effect... The polymer spin coating is critical in flexible electronic manufaction and micro-electro-mechanical system(MEMS)devices due to its simple operation, and uniformly coated layers. Some researchers focus on the effects of spin coating parameters such as wafer rotating speed, the viscosity of the coating liquid and solvent evaporation on final film thickness.In this work, the influence of substrate curvature on film thickness distribution is considered. A new parameter which represents the edge bead effect ratio(re) is proposed to investigate the influence factor of edge bead effect. Several operation parameters including the curvature of the substrate and the wafer-spin speed are taken into account to study the effects on the film thickness uniformity and edge-bead ratio. The morphologies and film thickness values of the spin-coated PDMS films under various substrate curvatures and coating speeds are measured with laser confocal microscopy. According to the results, both the convex and concave substrate will help to reduce the edge-bead effect significantly and thin film with better surface morphology can be obtained at high spin speed. Additionally, the relationship between the edge-bead ratio and the thin film thickness is like parabolic curve instead of linear dependence. This work may contribute to the mass production of flexible electronic devices. 展开更多
关键词 spin coating non-planar substrate film thickness distribution edge-bead effect
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