In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate proces...In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.展开更多
By deriving the discrete-time models of a digitally controlled H-bridge inverter system modulated by bipolar sinu- soidal pulse width modulation （BSPWM） and unipolar double-frequency sinusoidal pulse width modulati...By deriving the discrete-time models of a digitally controlled H-bridge inverter system modulated by bipolar sinu- soidal pulse width modulation （BSPWM） and unipolar double-frequency sinusoidal pulse width modulation （UDFSPWM） respectively, the performances of the two modulation strategies are analyzed in detail. The circuit parameters, used in this paper, are fixed. When the systems, modulated by BSPWM and UDFSPWM, have the same switching frequency, the stabil- ity boundaries of the two systems are the same. However, when the equivalent switching frequencies of the two systems are the same, the BSPWM modulated system is more stable than the UDFSPWM modulated system. In addition, a convenient method of establishing the discrete-time model of piecewise smooth system is presented. Finally, the analytical results are confirmed by circuit simulations and experimental measurements.展开更多
One of the primary concerns associated with ion cyclotron resonance heating(ICRH)is the enhanced impurity sputtering resulting from radio frequency(RF)sheath formation near plasma-facing components(PFCs),such as limit...One of the primary concerns associated with ion cyclotron resonance heating(ICRH)is the enhanced impurity sputtering resulting from radio frequency(RF)sheath formation near plasma-facing components(PFCs),such as limiters.Developing a sputtering model integrated with RF sheath simulations allows for a more comprehensive understanding of the kinetic behavior of incident ions and their interactions with the limiter surface.We accordingly develop an impurity sputtering model“PMSAD”,which computes the sputtering yield(amount of impurity)on the limiter surface based on incident ion characteristics and predicts the spatial distribution of impurities.The model provides a robust method for understanding and analyzing the impurity sputtering process from limiter surfaces,which is crucial for preventing ICRH surface erosion and reducing edge and core plasma contamination.展开更多
针对卡方自动交互诊断(CHAID)决策树易过拟合的问题,提出CHAID随机森林方法(CHAID Random Forest,CHAID-RF)。该方法采用随机采样、随机选择特征以及集成的策略,将CHAID决策树作为基分类器,形成CHAID-RF。为了验证CHAID-RF的有效性,选取...针对卡方自动交互诊断(CHAID)决策树易过拟合的问题,提出CHAID随机森林方法(CHAID Random Forest,CHAID-RF)。该方法采用随机采样、随机选择特征以及集成的策略,将CHAID决策树作为基分类器,形成CHAID-RF。为了验证CHAID-RF的有效性,选取CART、CHAID、SVM、RF作为对比算法,以准确率、加权查准率、加权查全率、加权F值作为分类模型评价指标,以均方根误差作为回归模型评价指标,采用10个分类数据集和7个回归数据集进行验证。实验结果表明CHAID-RF可行有效。展开更多
基金Supported by the Terahertz Multi User RF Transceiver System Development Project(Z211100004421012).
文摘In this work,we investigate the impact of the whole small recess offset on DC and RF characteristics of InP high electron mobility transistors(HEMTs).L_(g)=80 nm HEMTs are fabricated with a double-recessed gate process.We focus on their DC and RF responses,including the maximum transconductance(g_(m_max)),ON-resistance(R_(ON)),current-gain cutoff frequency(f_(T)),and maximum oscillation frequency(f_(max)).The devices have almost same RON.The g_(m_max) improves as the whole small recess moves toward the source.However,a small gate to source capacitance(C_(gs))and a small drain output conductance(g_(ds))lead to the largest f_(T),although the whole small gate recess moves toward the drain leads to the smaller g_(m_max).According to the small-signal modeling,the device with the whole small recess toward drain exhibits an excellent RF characteristics,such as f_(T)=372 GHz and f_(max)=394 GHz.This result is achieved by paying attention to adjust resistive and capacitive parasitics,which play a key role in high-frequency response.
基金supported by the National Natural Science Foundation of China (Grant No. 51277146)the Foundation of Delta Science,Technologythe Education Development Program for Power Electronics (Grant No. DREG2011003)
文摘By deriving the discrete-time models of a digitally controlled H-bridge inverter system modulated by bipolar sinu- soidal pulse width modulation （BSPWM） and unipolar double-frequency sinusoidal pulse width modulation （UDFSPWM） respectively, the performances of the two modulation strategies are analyzed in detail. The circuit parameters, used in this paper, are fixed. When the systems, modulated by BSPWM and UDFSPWM, have the same switching frequency, the stabil- ity boundaries of the two systems are the same. However, when the equivalent switching frequencies of the two systems are the same, the BSPWM modulated system is more stable than the UDFSPWM modulated system. In addition, a convenient method of establishing the discrete-time model of piecewise smooth system is presented. Finally, the analytical results are confirmed by circuit simulations and experimental measurements.
基金financially supported by the National MCF Energy R&D Program(Grant No.2022YFE03190100)the National Natural Science Foundation of China(Grant Nos.12422513,12105035,U21A20438)the Xiaomi Young Talents Program。
文摘One of the primary concerns associated with ion cyclotron resonance heating(ICRH)is the enhanced impurity sputtering resulting from radio frequency(RF)sheath formation near plasma-facing components(PFCs),such as limiters.Developing a sputtering model integrated with RF sheath simulations allows for a more comprehensive understanding of the kinetic behavior of incident ions and their interactions with the limiter surface.We accordingly develop an impurity sputtering model“PMSAD”,which computes the sputtering yield(amount of impurity)on the limiter surface based on incident ion characteristics and predicts the spatial distribution of impurities.The model provides a robust method for understanding and analyzing the impurity sputtering process from limiter surfaces,which is crucial for preventing ICRH surface erosion and reducing edge and core plasma contamination.
文摘针对卡方自动交互诊断(CHAID)决策树易过拟合的问题,提出CHAID随机森林方法(CHAID Random Forest,CHAID-RF)。该方法采用随机采样、随机选择特征以及集成的策略,将CHAID决策树作为基分类器,形成CHAID-RF。为了验证CHAID-RF的有效性,选取CART、CHAID、SVM、RF作为对比算法,以准确率、加权查准率、加权查全率、加权F值作为分类模型评价指标,以均方根误差作为回归模型评价指标,采用10个分类数据集和7个回归数据集进行验证。实验结果表明CHAID-RF可行有效。
