Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
Background Plant tissue culture has emerged as a tool for improving cotton propagation and genetics,but recalcitrance nature of cotton makes it difficult to develop in vitro regeneration.Cotton’s recalcitrance is inf...Background Plant tissue culture has emerged as a tool for improving cotton propagation and genetics,but recalcitrance nature of cotton makes it difficult to develop in vitro regeneration.Cotton’s recalcitrance is influenced by genotype,explant type,and environmental conditions.To overcome these issues,this study uses different machine learning-based predictive models by employing multiple input factors.Cotyledonary node explants of two commercial cotton cultivars(STN-468 and GSN-12)were isolated from 7–8 days old seedlings,preconditioned with 5,10,and 20 mg·L^(-1) kinetin(KIN)for 10 days.Thereafter,explants were postconditioned on full Murashige and Skoog(MS),1/2MS,1/4MS,and full MS+0.05 mg·L^(-1) KIN,cultured in growth room enlightened with red and blue light-emitting diodes(LED)combination.Statistical analysis(analysis of variance,regression analysis)was employed to assess the impact of different treatments on shoot regeneration,with artificial intelligence(AI)models used for confirming the findings.Results GSN-12 exhibited superior shoot regeneration potential compared with STN-468,with an average of 4.99 shoots per explant versus 3.97.Optimal results were achieved with 5 mg·L^(-1) KIN preconditioning,1/4MS postconditioning,and 80%red LED,with maximum of 7.75 shoot count for GSN-12 under these conditions;while STN-468 reached 6.00 shoots under the conditions of 10 mg·L^(-1) KIN preconditioning,MS with 0.05 mg·L^(-1) KIN(postconditioning)and 75.0%red LED.Rooting was successfully achieved with naphthalene acetic acid and activated charcoal.Additionally,three different powerful AI-based models,namely,extreme gradient boost(XGBoost),random forest(RF),and the artificial neural network-based multilayer perceptron(MLP)regression models validated the findings.Conclusion GSN-12 outperformed STN-468 with optimal results from 5 mg·L^(-1) KIN+1/4MS+80%red LED.Application of machine learning-based prediction models to optimize cotton tissue culture protocols for shoot regeneration is helpful to improve cotton regeneration efficiency.展开更多
Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamp...Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.展开更多
In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power a...In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.展开更多
Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemi...Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.展开更多
In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in v...In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in various power electronic systems.In order to improve the performance of the 4H-SiC power device,a novel ultrahigh-voltage(UHV)4H-SiC merged p-type/intrinsic/n-type(PiN)Schottky(MPS)diode with three-dimensional(3D)p-type buried layers(PBL)(3D-PBL MPS)is proposed and investigated by numerical simulation.The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL(PBL-free MPS).However,when the 3D-PBL MPS is in the reverse blocking state,the 3D PBL can transfer the peak electric field(E_(peak))into a deeper position in the body of the epitaxial layer,and enhance the ability of the device to shield the high electric field at the Schottky contact interface(E_(S)),so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002%of that of the PBL-free MPS.Meanwhile,the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL(2D-PBL MPS),and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL.All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.展开更多
This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(F...This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.展开更多
Beam shaping is required for semiconductor lasers to achieve high optical fiber coupling efficiency in many applications.But the positioning errors on optics may reduce beam shaping effects,and then lead to low optica...Beam shaping is required for semiconductor lasers to achieve high optical fiber coupling efficiency in many applications.But the positioning errors on optics may reduce beam shaping effects,and then lead to low optical fiber coupling efficiency.In this work,the positioning errors models for the single emitter laser diode beam shaping system are established.Moreover,the relationships between the errors and the beam shaping effect of each shapers are analysed.Subsequently,the relationship between the errors and the optical fiber coupling efficiency is analysed.The result shows that position errors in the Z axis direction on the fast axis collimator have the greatest influence on the shaping effect,followed by the position errors in the Z axis direction on the converging lens,which should be strictly suppressed in actual operation.Besides,the position errors have a significant influence on the optical fiber coupling efficiency and need to be avoided.展开更多
We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices(WOLED) and an organic photovoltaic(OPV) cell.T...We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices(WOLED) and an organic photovoltaic(OPV) cell.The device is called a PVOLED.It has a glass / ITO / CuPc / m-MTDATA ∶ V 2 O 5 / NPB / CBP ∶ FIrpic ∶ DCJTB / BPhen / LiF / Al / P3HT∶ PCBM / V 2 O 5 / Al structure.The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd / m 2,when the conversion efficiency of OPV is 2.3%.We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED.High efficiency(18.3 cd / A) and high contrast ratio(9.3) were obtained at the device operated at 2 500 cd / m 2 under an ambient illumination of 24 000 lx.Reasonable white light emission with Commission Internationale De L'Eclairage(CIE) color coordinates of(0.32,0.44) at 20 mA / cm 2 and slight color shift occurred in spite of a high current density of 50 mA / cm 2.The proposed PVOLED is highly promising for use in outdoors display applications.展开更多
Boiling structures on evaporation surface of red copper sheet with a diameter （D） of 10 mm and a wall thickness （h） of 1 mm were processed by the ploughing-extrusion （P-E） processing method, which is one part of...Boiling structures on evaporation surface of red copper sheet with a diameter （D） of 10 mm and a wall thickness （h） of 1 mm were processed by the ploughing-extrusion （P-E） processing method, which is one part of the phase-change heat sink for high power （HP） light emitting diode （LED）. The experimental results show that two different structures of rectangular- and triangular-shaped micro-grooves are formed in P-E process. When P-E depth （ap）, interval of helical grooves （dp） and rotation speed （n） are 0.12 ram, 0.2 mm and 100 r/min, respectively, the boiling structures of triangular-shaped grooves with the fin height of 0.15 mm that has good evaporation performance are obtained. The shapes of the boiling structures are restricted by dp and ap, and dp is determined by n and amount of feed （f）. The ploughing speed has an important influence on the formation of groove structure in P-E process.展开更多
Light-emitting diodes(LEDs)have wide applications in the areaof lighting,medical devices,display screens,etc.Owing to theexcellent optoelectronic properties and the facile solution proces-sing methods,organometal hali...Light-emitting diodes(LEDs)have wide applications in the areaof lighting,medical devices,display screens,etc.Owing to theexcellent optoelectronic properties and the facile solution proces-sing methods,organometal halide perovskites are extensively stu-died and proved to be promising light.emitting materials to fabri-cate LED devices[1-2].Generally,nonradiative recombination andlight trapping are two main factors to impede the efficiency en-hancement of LEDs,which are more serious in perovskite mate-rials for the high refractive index.展开更多
The dissolved gas analysis is one of the most effective and convenient methods to diagnose the early discharge faults of transformers,the fault involves the solid insulation.oil—paper insulation cracks and releases c...The dissolved gas analysis is one of the most effective and convenient methods to diagnose the early discharge faults of transformers,the fault involves the solid insulation.oil—paper insulation cracks and releases carbon monoxide(co)gas.Therefore,the detection of CO can forecast the potentia1 inner faults of oil.filled transformers.展开更多
Abstract:Hybrid inorganic/organic white organic light emitting diodes(hybrid-WOLEDs)are fabricated by combi-ning the blue phosphorescent organic light emitting diodes(PHOLEDs)with red Sr2SiO4:Eu3+phosphor spin coateda...Abstract:Hybrid inorganic/organic white organic light emitting diodes(hybrid-WOLEDs)are fabricated by combi-ning the blue phosphorescent organic light emitting diodes(PHOLEDs)with red Sr2SiO4:Eu3+phosphor spin coatedas a color conversion layer(CCL)over the other side of glass substrate on the devices.The basic configuration of thePHOLEDs consists a host material,N,N'-dicarbazolyl-3,5-benzene(mCP)which doped with a blue phosphorescentiridium complexes iridium(Ⅲ)bis[(4,6-di-fluorophenyl)-pyridinato-N-C2'](FIrpic)to produce high efficient blueorganic light emitting diodes.The hybrid-WOLED shows maximum luminous efficiency of 22.1 cd/A,maximumpower efficiency of 11.26 lm/W,external quantum efficiency of 10.2%and CIE coordinates of(0.32,0.34).Mo-reover,the output spectra and CIE coordinates of the hybrid-WOLED have a small shift in different driving currentdensity,which demonstrate good color stability.展开更多
Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state ligh...Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.展开更多
In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the ...In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the rapid determination of optimal embedding impedance for diodes across a specific bandwidth to achieve maximum efficiency through harmonic balance simulations.By optimizing the linear matching circuit with the optimal embedding impedance,the method effectively segregates the simulation of the linear segments from the nonlinear segments in the frequency multiplier circuit,substantially improving the speed of simulations.The design of on-chip linear matching circuits adopts a modular circuit design strategy,incorporating fixed load resistors to simplify the matching challenge.Utilizing this approach,a 340 GHz frequency doubler was developed and measured.The results demonstrate that,across a bandwidth of 330 GHz to 342 GHz,the efficiency of the doubler remains above 10%,with an input power ranging from 98 mW to 141mW and an output power exceeding 13 mW.Notably,at an input power of 141 mW,a peak output power of 21.8 mW was achieved at 334 GHz,corresponding to an efficiency of 15.8%.展开更多
We have examined the theoretical implications of combining two main and three auxiliary ligands to form several Ir(Ⅲ)complexes featuring a transition metal as their core atom to identify some appropriate organic ligh...We have examined the theoretical implications of combining two main and three auxiliary ligands to form several Ir(Ⅲ)complexes featuring a transition metal as their core atom to identify some appropriate organic lightemitting diode(OLED)materials.By utilizing electronic structure,frontier molecular orbitals,minimum single-line absorption,triplet excited states,and emission spectral data derived from the density functional theory,the usefulness of these Ir(Ⅲ)complexes,including(piq)_(2)Ir(acac),(piq)_(2)Ir(tmd),(piq)_(2)Ir(tpip),(fpiq)_(2)Ir(acac),(fpiq)_(2)Ir(tmd),and(fpiq)_(2)Ir(tpip),in OLEDs was examined,where piq=1-phenylisoquinoline,fpiq=1-(4-fluorophenyl)isoquinoline,acac=(3Z)-4-hydroxypent-3-en-2-one,tmd=(4Z)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one,and tpip=tetraphenylimido-diphosphonate.These complexes all have low-efficiency roll-off properties,especially(fpiq)_(2)Ir(tpip).Some researchers have successfully synthesized complexes extremely similar to(piq)_(2)Ir(acac)through the Suzuki-Miyaura coupling reaction.展开更多
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
文摘Background Plant tissue culture has emerged as a tool for improving cotton propagation and genetics,but recalcitrance nature of cotton makes it difficult to develop in vitro regeneration.Cotton’s recalcitrance is influenced by genotype,explant type,and environmental conditions.To overcome these issues,this study uses different machine learning-based predictive models by employing multiple input factors.Cotyledonary node explants of two commercial cotton cultivars(STN-468 and GSN-12)were isolated from 7–8 days old seedlings,preconditioned with 5,10,and 20 mg·L^(-1) kinetin(KIN)for 10 days.Thereafter,explants were postconditioned on full Murashige and Skoog(MS),1/2MS,1/4MS,and full MS+0.05 mg·L^(-1) KIN,cultured in growth room enlightened with red and blue light-emitting diodes(LED)combination.Statistical analysis(analysis of variance,regression analysis)was employed to assess the impact of different treatments on shoot regeneration,with artificial intelligence(AI)models used for confirming the findings.Results GSN-12 exhibited superior shoot regeneration potential compared with STN-468,with an average of 4.99 shoots per explant versus 3.97.Optimal results were achieved with 5 mg·L^(-1) KIN preconditioning,1/4MS postconditioning,and 80%red LED,with maximum of 7.75 shoot count for GSN-12 under these conditions;while STN-468 reached 6.00 shoots under the conditions of 10 mg·L^(-1) KIN preconditioning,MS with 0.05 mg·L^(-1) KIN(postconditioning)and 75.0%red LED.Rooting was successfully achieved with naphthalene acetic acid and activated charcoal.Additionally,three different powerful AI-based models,namely,extreme gradient boost(XGBoost),random forest(RF),and the artificial neural network-based multilayer perceptron(MLP)regression models validated the findings.Conclusion GSN-12 outperformed STN-468 with optimal results from 5 mg·L^(-1) KIN+1/4MS+80%red LED.Application of machine learning-based prediction models to optimize cotton tissue culture protocols for shoot regeneration is helpful to improve cotton regeneration efficiency.
基金funded by the China Agriculture Research System(CARS-15-16).
文摘Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.
基金Supported by National Key R&D Project(2017YFB0405100)National Natural Science Foundation of China(61774024/61964007)Jilin province science and technology development plan(20190302007GX)。
文摘In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.
基金the National Natural Science Foundation of China(Grant Nos.22275092,52372084)the Fundamental Research Funds for the Central Universities(Grant No.30923010920)。
文摘Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.
基金Project(F2020210016) supported by the Natural Science Foundation of Hebei,ChinaProject(620004153) supported by the National Natural Science Foundation of China。
文摘In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in various power electronic systems.In order to improve the performance of the 4H-SiC power device,a novel ultrahigh-voltage(UHV)4H-SiC merged p-type/intrinsic/n-type(PiN)Schottky(MPS)diode with three-dimensional(3D)p-type buried layers(PBL)(3D-PBL MPS)is proposed and investigated by numerical simulation.The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL(PBL-free MPS).However,when the 3D-PBL MPS is in the reverse blocking state,the 3D PBL can transfer the peak electric field(E_(peak))into a deeper position in the body of the epitaxial layer,and enhance the ability of the device to shield the high electric field at the Schottky contact interface(E_(S)),so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002%of that of the PBL-free MPS.Meanwhile,the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL(2D-PBL MPS),and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL.All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.
基金the I-Shou University,Taiwan,for financially supporting this research under Contract No.ISU99-01-06Taiwan Science Council under Contract No.NSC98-2218-E-214-001 and 98-2221-E-214-003-MY3
文摘This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.
基金Project(51475479) supported by the National Natural Science Foundation of ChinaProject(2017YFB1104800) supported by the National Key Research and Development Program of China+2 种基金Project(2016GK2098) supported by the Key Research and Development Program of Hunan Province,ChinaProject(ZZYJKT2017-07) supported by the State Key Laboratory of High Performance Complex Manufacturing,Central South University,ChinaProject(JMTZ201804) supported by the Key Laboratory for Precision&Non-traditional Machining of Ministry of Education,Dalian University of Technology,China
文摘Beam shaping is required for semiconductor lasers to achieve high optical fiber coupling efficiency in many applications.But the positioning errors on optics may reduce beam shaping effects,and then lead to low optical fiber coupling efficiency.In this work,the positioning errors models for the single emitter laser diode beam shaping system are established.Moreover,the relationships between the errors and the beam shaping effect of each shapers are analysed.Subsequently,the relationship between the errors and the optical fiber coupling efficiency is analysed.The result shows that position errors in the Z axis direction on the fast axis collimator have the greatest influence on the shaping effect,followed by the position errors in the Z axis direction on the converging lens,which should be strictly suppressed in actual operation.Besides,the position errors have a significant influence on the optical fiber coupling efficiency and need to be avoided.
基金Project supported by NSC(98-2221-E-214-003-MY3 and ISU99-01-06)
文摘We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices(WOLED) and an organic photovoltaic(OPV) cell.The device is called a PVOLED.It has a glass / ITO / CuPc / m-MTDATA ∶ V 2 O 5 / NPB / CBP ∶ FIrpic ∶ DCJTB / BPhen / LiF / Al / P3HT∶ PCBM / V 2 O 5 / Al structure.The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd / m 2,when the conversion efficiency of OPV is 2.3%.We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED.High efficiency(18.3 cd / A) and high contrast ratio(9.3) were obtained at the device operated at 2 500 cd / m 2 under an ambient illumination of 24 000 lx.Reasonable white light emission with Commission Internationale De L'Eclairage(CIE) color coordinates of(0.32,0.44) at 20 mA / cm 2 and slight color shift occurred in spite of a high current density of 50 mA / cm 2.The proposed PVOLED is highly promising for use in outdoors display applications.
基金Projects(50436010, 50675070) supported by the National Natural Science Foundation of China Project(07118064) supported by the Natural Science Foundation of Guangdong Province, China+1 种基金 Project(U0834002) supported by the Joint Fund of NSFC-Guangdong of ChinaProjects(SY200806300289A, JSA200903190981A) supported by Shenzhen Scientific Program, China
文摘Boiling structures on evaporation surface of red copper sheet with a diameter （D） of 10 mm and a wall thickness （h） of 1 mm were processed by the ploughing-extrusion （P-E） processing method, which is one part of the phase-change heat sink for high power （HP） light emitting diode （LED）. The experimental results show that two different structures of rectangular- and triangular-shaped micro-grooves are formed in P-E process. When P-E depth （ap）, interval of helical grooves （dp） and rotation speed （n） are 0.12 ram, 0.2 mm and 100 r/min, respectively, the boiling structures of triangular-shaped grooves with the fin height of 0.15 mm that has good evaporation performance are obtained. The shapes of the boiling structures are restricted by dp and ap, and dp is determined by n and amount of feed （f）. The ploughing speed has an important influence on the formation of groove structure in P-E process.
文摘Light-emitting diodes(LEDs)have wide applications in the areaof lighting,medical devices,display screens,etc.Owing to theexcellent optoelectronic properties and the facile solution proces-sing methods,organometal halide perovskites are extensively stu-died and proved to be promising light.emitting materials to fabri-cate LED devices[1-2].Generally,nonradiative recombination andlight trapping are two main factors to impede the efficiency en-hancement of LEDs,which are more serious in perovskite mate-rials for the high refractive index.
文摘The dissolved gas analysis is one of the most effective and convenient methods to diagnose the early discharge faults of transformers,the fault involves the solid insulation.oil—paper insulation cracks and releases carbon monoxide(co)gas.Therefore,the detection of CO can forecast the potentia1 inner faults of oil.filled transformers.
基金Project supported by the National Science Council of the Republic of China(101-2221-E-214-016)the financial supporitng of ISU99-01-06the MANALAB at ISU,Taiwan
文摘Abstract:Hybrid inorganic/organic white organic light emitting diodes(hybrid-WOLEDs)are fabricated by combi-ning the blue phosphorescent organic light emitting diodes(PHOLEDs)with red Sr2SiO4:Eu3+phosphor spin coatedas a color conversion layer(CCL)over the other side of glass substrate on the devices.The basic configuration of thePHOLEDs consists a host material,N,N'-dicarbazolyl-3,5-benzene(mCP)which doped with a blue phosphorescentiridium complexes iridium(Ⅲ)bis[(4,6-di-fluorophenyl)-pyridinato-N-C2'](FIrpic)to produce high efficient blueorganic light emitting diodes.The hybrid-WOLED shows maximum luminous efficiency of 22.1 cd/A,maximumpower efficiency of 11.26 lm/W,external quantum efficiency of 10.2%and CIE coordinates of(0.32,0.34).Mo-reover,the output spectra and CIE coordinates of the hybrid-WOLED have a small shift in different driving currentdensity,which demonstrate good color stability.
基金Project(11904298)supported by the National Natural Science Foundation of ChinaProject(cstc2020jcyj-msxm X0586)supported by Chongqing Natural Science Foundation,ChinaProject(S202010635001)supported by Chongqing Municipal Training Program of Innovation and Entrepreneurship for Undergraduates,China。
文摘Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.
基金Supported by the Beijing Municipal Science&Technology Commission(Z211100004421012),the Key Reaserch and Development Pro⁃gram of China(2022YFF0605902)。
文摘In this paper,a linear optimization method(LOM)for the design of terahertz circuits is presented,aimed at enhancing the simulation efficacy and reducing the time of the circuit design workflow.This method enables the rapid determination of optimal embedding impedance for diodes across a specific bandwidth to achieve maximum efficiency through harmonic balance simulations.By optimizing the linear matching circuit with the optimal embedding impedance,the method effectively segregates the simulation of the linear segments from the nonlinear segments in the frequency multiplier circuit,substantially improving the speed of simulations.The design of on-chip linear matching circuits adopts a modular circuit design strategy,incorporating fixed load resistors to simplify the matching challenge.Utilizing this approach,a 340 GHz frequency doubler was developed and measured.The results demonstrate that,across a bandwidth of 330 GHz to 342 GHz,the efficiency of the doubler remains above 10%,with an input power ranging from 98 mW to 141mW and an output power exceeding 13 mW.Notably,at an input power of 141 mW,a peak output power of 21.8 mW was achieved at 334 GHz,corresponding to an efficiency of 15.8%.
文摘We have examined the theoretical implications of combining two main and three auxiliary ligands to form several Ir(Ⅲ)complexes featuring a transition metal as their core atom to identify some appropriate organic lightemitting diode(OLED)materials.By utilizing electronic structure,frontier molecular orbitals,minimum single-line absorption,triplet excited states,and emission spectral data derived from the density functional theory,the usefulness of these Ir(Ⅲ)complexes,including(piq)_(2)Ir(acac),(piq)_(2)Ir(tmd),(piq)_(2)Ir(tpip),(fpiq)_(2)Ir(acac),(fpiq)_(2)Ir(tmd),and(fpiq)_(2)Ir(tpip),in OLEDs was examined,where piq=1-phenylisoquinoline,fpiq=1-(4-fluorophenyl)isoquinoline,acac=(3Z)-4-hydroxypent-3-en-2-one,tmd=(4Z)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one,and tpip=tetraphenylimido-diphosphonate.These complexes all have low-efficiency roll-off properties,especially(fpiq)_(2)Ir(tpip).Some researchers have successfully synthesized complexes extremely similar to(piq)_(2)Ir(acac)through the Suzuki-Miyaura coupling reaction.
