Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method f...Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS_(2)PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction PDs.展开更多
First-principle calculations with different exchange-correlation functionals, including LDA, PBE, and vd W-DF functional in the form of opt B88-vd W, have been performed to investigate the electronic and elastic prope...First-principle calculations with different exchange-correlation functionals, including LDA, PBE, and vd W-DF functional in the form of opt B88-vd W, have been performed to investigate the electronic and elastic properties of twodimensional transition metal dichalcogenides（TMDCs） with the formula of MX2（M = Mo, W; X = O, S, Se, Te） in both monolayer and bilayer structures. The calculated band structures show a direct band gap for monolayer TMDCs at the K point except for MoO2 and WO2. When the monolayers are stacked into a bilayer, the reduced indirect band gaps are found except for bilayer WTe2, in which the direct gap is still present at the K point. The calculated in-plane Young moduli are comparable to that of graphene, which promises possible application of TMDCs in future flexible and stretchable electronic devices. We also evaluated the performance of different functionals including LDA, PBE, and opt B88-vd W in describing elastic moduli of TMDCs and found that LDA seems to be the most qualified method. Moreover, our calculations suggest that the Young moduli for bilayers are insensitive to stacking orders and the mechanical coupling between monolayers seems to be negligible.展开更多
Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible t...Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional （2D） materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.展开更多
Two-dimensional(2D) transition metal dichalcogenides(TMDs) have emerged as promising alternatives to the platinum-based catalysts for hydrogen evolution reaction(HER). The edge site of these2D materials exhibits HER-a...Two-dimensional(2D) transition metal dichalcogenides(TMDs) have emerged as promising alternatives to the platinum-based catalysts for hydrogen evolution reaction(HER). The edge site of these2D materials exhibits HER-active properties, whereas the large-area basal plane is inactive.Therefore, recent studies and methodologies have been investigated to improve the performance of TMD-based materials by activating inactive sites through elemental doping strategies. In this review,we focus on the metal and non-metal dopant effects on group VI TMDs such as MoS_(2) MoSe_(2) WS_(2)and WSe_(2) for promoting HER performances in acidic electrolytes. A general introduction to the HER is initially provided to explain the parameters in accessing the catalytic performance of dopedTMDs. Then, synthetic methods for doped-TMDs and their HER performances are introduced in order to understand the effect of various dopants including metallic and non-metallic elements. Finally, the current challenges and future opportunities are summarized to provide insights into developing highly active and stable doped-TMD materials and valuable guidelines for engineering TMD-based nanocatalysts for practical water splitting technologies.展开更多
The emergence of two dimensional(2D)materials has opened new possibilities for exhibiting second harmonic genera-tion(SHG)at the nanoscale,due to their remarkable optical response related to stable excitons at room te...The emergence of two dimensional(2D)materials has opened new possibilities for exhibiting second harmonic genera-tion(SHG)at the nanoscale,due to their remarkable optical response related to stable excitons at room temperature.However,the ultimate atomic-scale interaction length with light makes the SHG of Transition Metal Dichalcogenides(TM-Ds)monolayers naturally weak.Here,we propose coupling a monolayer of TMDs with a photonic grating slab that works with doubly resonant bound states in the continuum(BIC).The BIC slabs are designed to exhibit a pair of BICs,reson-ant with both the fundamental wave(FW)and the second harmonic wave(SHW).Firstly,the spatial mode matching can be fulfilled by tilting FW's incident angle.We theoretically demonstrate that this strategy leads to more than four orders of magnitude enhancement of SHG efficiency than a sole monolayer of TMDs,under a pump light intensity of 0.1 GW/cm^(2).Moreover,we demonstrate that patterning the TMDs monolayer can further enhance the spatial overlap coefficient,which leads to an extra three orders of magnitude enhancement of SHG efficiency.These results demonstrate remarkable pos-sibilities for enhancing SHG with nonlinear 2D materials,opening many opportunities for chip-based light sources,nano-lasers,imaging,and biochemical sensing.展开更多
The two-dimensional (2D) structure of layered transition metal dichalcogenides (TMDs) provides unusual physical properties [1,2]and chemical reactivity [3,4], which can be influenced by defects such as dislocations [5...The two-dimensional (2D) structure of layered transition metal dichalcogenides (TMDs) provides unusual physical properties [1,2]and chemical reactivity [3,4], which can be influenced by defects such as dislocations [5,6]. For example, dislocations can act as nucleation sites for the onset of deformation when subjected to stress [7].展开更多
The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great atten...The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu- intercalated form, Cuo.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mecha- nism. Here we report systematic high resolution angle-resolved photoemission （ARPES） studies on PdTe2 and Cuo.05PdTe2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cuo.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors.展开更多
We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as saturable ...We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as saturable absorber (SA). These materials are fabricated via a simple drop-casting method. By employing WS<sub>2</sub>, we obtain a stable harmonic mode-locking at the threshold pump power of 184 mW, and the generated soliton pulse has 3.48 MHz of repetition rate. At the maximum pump power of 250 mW, we also obtain a small value of pulse duration, 2.43 ps with signal-to-noise ratio (SNR) of 57 dB. For MoS<sub>2</sub> SA, the pulse is generated at 105 mW pump power with repetition rate of 1.16 MHz. However, the pulse duration cannot be detected by the autocorrelator device as the pulse duration recorded is 468 ns, with the SNR value of 35 dB.展开更多
We use laser-scanning nonlinear imaging microscopy in atomically thin transition metal dichalcogenides(TMDs)to reveal information on the crystalline orientation distribution,within the 2D lattice.In particular,we perf...We use laser-scanning nonlinear imaging microscopy in atomically thin transition metal dichalcogenides(TMDs)to reveal information on the crystalline orientation distribution,within the 2D lattice.In particular,we perform polarization-resolved second-harmonic generation(PSHG)imaging in a stationary,raster-scanned chemical vapor deposition(CVD)-grown WS2 flake,in order to obtain with high precision a spatially resolved map of the orientation of its main crystallographic axis(armchair orientation).By fitting the experimental PSHG images of sub-micron resolution into a generalized nonlinear model,we are able to determine the armchair orientation for every pixel of the image of the 2D material,with further improved resolution.This pixel-wise mapping of the armchair orientation of 2D WS2 allows us to distinguish between different domains,reveal fine structure,and estimate the crystal orientation variability,which can be used as a unique crystal quality marker over large areas.The necessity and superiority of a polarization-resolved analysis over intensity-only measurements is experimentally demonstrated,while the advantages of PSHG over other techniques are analysed and discussed.展开更多
Transition metal dichalcogenides(TMDs)and perovskites are among the most attractive and widely investigated semiconductors in the recent decade.They are promising materials for various applications,such as photodetect...Transition metal dichalcogenides(TMDs)and perovskites are among the most attractive and widely investigated semiconductors in the recent decade.They are promising materials for various applications,such as photodetection,solar energy harvesting,light emission,and many others.Combining these materials to form heterostructures can enrich the already fascinating properties and bring up new phenomena and opportunities.Work in this field is growing rapidly in both fundamental studies and device applications.Here,we review the recent findings in the perovskite-TMD heterostructures and give our perspectives on the future development of this promising field.The fundamental properties of the perovskites,TMDs,and their heterostructures are discussed first,followed by a summary of the synthesis methods of the perovskites and TMDs and the approaches to obtain high-quality interfaces.Particular attention is paid to the TMD-perovskite heterostructures that have been applied in solar cells and photodetectors with notable performance improvement.Finally through our analysis,we propose an outline on further fundamental studies and the promising applications of perovskite-TMD heterostructures.展开更多
The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based in- formation processing and also provide an ideal platform to study excitonic effects. At the center of va...The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based in- formation processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many- particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel con- text of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity-resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley-related many-particle electronic states in semiconducting monolayer transitional metal dichalcogenides.展开更多
The investigation of thermal transport is crucial to the thermal management of modern electronic devices.To obtain the thermal conductivity through solution of the Boltzmann transport equation,calculation of the anhar...The investigation of thermal transport is crucial to the thermal management of modern electronic devices.To obtain the thermal conductivity through solution of the Boltzmann transport equation,calculation of the anharmonic interatomic force constants has a high computational cost based on the current method of single-point density functional theory force calculation.The recent suggested machine learning interatomic potentials(MLIPs)method can avoid these huge computational demands.In this work,we study the thermal conductivity of two-dimensional MoS_(2)-like hexagonal boron dichalcogenides(H-B_(2)VI_(2);V I=S,Se,Te)with a combination of MLIPs and the phonon Boltzmann transport equation.The room-temperature thermal conductivity of H-B_(2)S_(2)can reach up to 336 W·m^(-1)·K^(-1),obviously larger than that of H-B_(2)Se_(2)and H-B_(2)Te_(2).This is mainly due to the difference in phonon group velocity.By substituting the different chalcogen elements in the second sublayer,H-B_(2)VIV I′have lower thermal conductivity than H-B_(2)VI_(2).The room-temperature thermal conductivity of B2STe is only 11%of that of H-B_(2)S_(2).This can be explained by comparing phonon group velocity and phonon relaxation time.The MLIP method is proved to be an efficient method for studying the thermal conductivity of materials,and H-B_(2)S_(2)-based nanodevices have excellent thermal conduction.展开更多
The Janus monolayer transition metal dichalcogenides(TMDs)MXY(M=Mo,W,etc.and X,Y=S,Se,etc.)have been successfully synthesized in recent years.The Rashba spin splitting in these compounds arises due to the breaking of ...The Janus monolayer transition metal dichalcogenides(TMDs)MXY(M=Mo,W,etc.and X,Y=S,Se,etc.)have been successfully synthesized in recent years.The Rashba spin splitting in these compounds arises due to the breaking of out-of-plane mirror symmetry.Here we study the pairing symmetry of superconducting Janus monolayer TMDs within the weak-coupling framework near critical temperature Tc,of which the Fermi surface(FS)sheets centered around bothΓand K(K′)points.We find that the strong Rashba splitting produces two kinds of topological superconducting states which differ from that in its parent compounds.More specifically,at relatively high chemical potentials,we obtain a timereversal invariant s+f+p-wave mixed superconducting state,which is fully gapped and topologically nontrivial,i.e.,a Z_(2) topological state.On the other hand,a time-reversal symmetry breaking d+p+f-wave superconducting state appears at lower chemical potentials.This state possess a large Chern number|C|=6 at appropriate pairing strength,demonstrating its nontrivial band topology.Our results suggest the Janus monolayer TMDs to be a promising candidate for the intrinsic helical and chiral topological superconductors.展开更多
Monolayer transition metal dichalcogenides can normally exist in several structural polymorphs with distinct electrical,optical,and catalytic properties.Effective control of the relative stability and transformation o...Monolayer transition metal dichalcogenides can normally exist in several structural polymorphs with distinct electrical,optical,and catalytic properties.Effective control of the relative stability and transformation of different phases in these materials is thus of critical importance for applications.Using density functional theory calculations,we investigate the effects of low-work-function metal substrates including Ti,Zr,and Hf on the structural,electronic,and catalytic properties of monolayer MoS_(2) and WS_(2).The results indicate that such substrates not only convert the energetically stable structure from the 1H phase to the 1T'/1T phase,but also significantly reduce the kinetic barriers of the phase transformation.Furthermore,our calculations also indicate that the 1T' phase of MoS_(2) with Zr or Hf substrate is a potential catalyst for the hydrogen evolution reaction.展开更多
The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimen...The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.展开更多
Monolayer group-VIB transition metal dichalcogenides(TMDs)feature low-energy massive Dirac fermions,which have valley contrasting Berry curvature.This nontrivial local band topology gives rise to valley Hall transport...Monolayer group-VIB transition metal dichalcogenides(TMDs)feature low-energy massive Dirac fermions,which have valley contrasting Berry curvature.This nontrivial local band topology gives rise to valley Hall transport and optical selection rules for interband transitions that open up new possibilities for valleytronics.However,the large bandgap in TMDs results in relatively small Berry curvature,leading to weak valley contrasting physics in practical experiments.Here,we show that Dirac fermions with tunable large Berry curvature can be engineered in moirésuperlattice of TMD heterobilayers.These moiréDirac fermions are created in a magnified honeycomb lattice with its sublattice degree of freedom formed by two local moirépotential minima.We show that applying an on-site potential can tune the moiréflat bands into helical ones.In short-period moirésuperlattice,we find that the two moirévalleys become asymmetric,which results in a net spin Hall current.More interestingly,a circularly polarized light drives these moiréDirac fermions into quantum anomalous Hall phase with chiral edge states.Our results open a new possibility to design the moiré-scale spin and valley physics using TMD moiréstructures.展开更多
Two-dimensional transition metal dichalcogenides(2D TMDCs)have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility,electonic structure,and optical properties.T...Two-dimensional transition metal dichalcogenides(2D TMDCs)have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility,electonic structure,and optical properties.The strain-induced out-of-plane deformations in 2D TMDCs lead to diverse excitonic behaviors and versatile modulations in optical properties,paving the way for the development of advanced quantum technologies,flexible optoelectronic materials,and straintronic devices.Research on local strain engineering on 2D TMDCs has been delved into fabrication techniques,electronic state variations,and quantum optical applications.This review begins by summarizing the state-of-the-art methods for introducing local strain into 2D TMDCs,followed by an exploration of the impact of local strain engineering on optical properties.The intriguing phenomena resulting from local strain,such as exciton funnelling and anti-funnelling,are also discussed.We then shift the focus to the application of locally strained 2D TMDCs as quantum emitters,with various strategies outlined for modulating the properties of TMDC-based quantum emitters.Finally,we discuss the remaining questions in this field and provide an outlook on the future of local strain engineering on 2D TMDCs.展开更多
Transition metal dichalcogenides(TMDs)are a promising class of layered materials in the post-graphene era,with extensive research attention due to their diverse alternative elements and fascinating semiconductor behav...Transition metal dichalcogenides(TMDs)are a promising class of layered materials in the post-graphene era,with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior.Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties,providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs.The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable(opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts(0–100%).Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase,band alignment/structure,carrier density,and surface reactive activity,enabling novel and promising applications.This review comprehensively elaborates on atomically substitutional engineering in TMD layers,including theoretical foundations,synthetic strategies,tailored properties,and superior applications.The emerging type of ternary TMDs,Janus TMDs,is presented specifically to highlight their typical compounds,fabrication methods,and potential applications.Finally,opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.展开更多
High-pressure studies of two-dimensional materials have revealed numerous novel properties and physical mechanisms behind them.As a typical material of transition metal dichalcogenides(TMDs),ZrSe_(2)exhibits high carr...High-pressure studies of two-dimensional materials have revealed numerous novel properties and physical mechanisms behind them.As a typical material of transition metal dichalcogenides(TMDs),ZrSe_(2)exhibits high carrier mobility,rich electronic states regulated by doping,and high potential in applications at ambient pressure.However,the properties of ZrSe_(2)under pressure are still not clear,especially for the structural and electrical properties.Here,we report the investigation of ZrSe_(2)under pressure up to 66.5 GPa by in-situ x-ray diffraction,Raman,electrical transport measurements,and first-principles calculations.Two structural phase transitions occur in ZrSe_(2)at 8.3 GPa and 31.5 GPa,from P-3m1 symmetry to P2_(1)/m symmetry,and finally transformed into a non-layer I4/mmm symmetry structure.Pressure-induced metallic transition is observed at around 19.4 GPa in phaseⅡwhich aligns well with the results of the calculation.Our work will help to improve the understanding of the evolution of the structure and electrical transport properties of two-dimensional materials.展开更多
Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) un...Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS_(2) undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P2_(1)2_(1)2_(1).Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.展开更多
基金the National Nat-ural Science Foundation of China(Grant Nos.12025503,U23B2072,12074293,and 12275198)the Funda-mental Research Funds for the Center Universities(Grant Nos.2042024kf0001 and 2042023kf0196).
文摘Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS_(2)PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction PDs.
基金Project supported by the Construct Program of the Key Discipline in Hunan Province,ChinaAid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China
文摘First-principle calculations with different exchange-correlation functionals, including LDA, PBE, and vd W-DF functional in the form of opt B88-vd W, have been performed to investigate the electronic and elastic properties of twodimensional transition metal dichalcogenides（TMDCs） with the formula of MX2（M = Mo, W; X = O, S, Se, Te） in both monolayer and bilayer structures. The calculated band structures show a direct band gap for monolayer TMDCs at the K point except for MoO2 and WO2. When the monolayers are stacked into a bilayer, the reduced indirect band gaps are found except for bilayer WTe2, in which the direct gap is still present at the K point. The calculated in-plane Young moduli are comparable to that of graphene, which promises possible application of TMDCs in future flexible and stretchable electronic devices. We also evaluated the performance of different functionals including LDA, PBE, and opt B88-vd W in describing elastic moduli of TMDCs and found that LDA seems to be the most qualified method. Moreover, our calculations suggest that the Young moduli for bilayers are insensitive to stacking orders and the mechanical coupling between monolayers seems to be negligible.
基金Project supported by the National Basic Research Program of China(Grant No.2014CB643903)the National Natural Science Foundation of China(Grant Nos.61225021,11474272,11174272,and 11404324)K.C.Wong Education Foundation
文摘Transition metal dichalcogenides （TMDCs） have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional （2D） materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.
基金supported by the National Research Foundation of Korea(NRF-2021R1A2C4001411,2020R1A4A1018393,2020R1C1C 1008514,2020R1I1A1A01072100,2019R1A6A1A11053838)。
文摘Two-dimensional(2D) transition metal dichalcogenides(TMDs) have emerged as promising alternatives to the platinum-based catalysts for hydrogen evolution reaction(HER). The edge site of these2D materials exhibits HER-active properties, whereas the large-area basal plane is inactive.Therefore, recent studies and methodologies have been investigated to improve the performance of TMD-based materials by activating inactive sites through elemental doping strategies. In this review,we focus on the metal and non-metal dopant effects on group VI TMDs such as MoS_(2) MoSe_(2) WS_(2)and WSe_(2) for promoting HER performances in acidic electrolytes. A general introduction to the HER is initially provided to explain the parameters in accessing the catalytic performance of dopedTMDs. Then, synthetic methods for doped-TMDs and their HER performances are introduced in order to understand the effect of various dopants including metallic and non-metallic elements. Finally, the current challenges and future opportunities are summarized to provide insights into developing highly active and stable doped-TMD materials and valuable guidelines for engineering TMD-based nanocatalysts for practical water splitting technologies.
基金financial supports from the National Natural Science Foundation of China(Grant No.11604150)Fundamental Research Funds for the Central Universities of China(Grant No.ZYGX2020J010)M.Rahmani.acknowledges support from the UK Research and Innovation Future Leaders Fellowship(MR/T040513/1)。
文摘The emergence of two dimensional(2D)materials has opened new possibilities for exhibiting second harmonic genera-tion(SHG)at the nanoscale,due to their remarkable optical response related to stable excitons at room temperature.However,the ultimate atomic-scale interaction length with light makes the SHG of Transition Metal Dichalcogenides(TM-Ds)monolayers naturally weak.Here,we propose coupling a monolayer of TMDs with a photonic grating slab that works with doubly resonant bound states in the continuum(BIC).The BIC slabs are designed to exhibit a pair of BICs,reson-ant with both the fundamental wave(FW)and the second harmonic wave(SHW).Firstly,the spatial mode matching can be fulfilled by tilting FW's incident angle.We theoretically demonstrate that this strategy leads to more than four orders of magnitude enhancement of SHG efficiency than a sole monolayer of TMDs,under a pump light intensity of 0.1 GW/cm^(2).Moreover,we demonstrate that patterning the TMDs monolayer can further enhance the spatial overlap coefficient,which leads to an extra three orders of magnitude enhancement of SHG efficiency.These results demonstrate remarkable pos-sibilities for enhancing SHG with nonlinear 2D materials,opening many opportunities for chip-based light sources,nano-lasers,imaging,and biochemical sensing.
基金supported by the National Key R&D Program of China[Nos.2018YFB1304902,2016YFA0300804,2016YFA0300903]the National Natural Science Foundation of China[Nos.51672007,11974023,11904372,11704389,U1813211]+3 种基金the Key-Area Research and Development Program of Guang Dong Province[Nos.2018B030327001,2018B010109009]the‘‘2011 Program”Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matterthe Beijing Institute of Technology Research Fund Program for Young Scholarsthe Beijing Institute of Technology laboratory research project[No.2019BITSYA03]。
文摘The two-dimensional (2D) structure of layered transition metal dichalcogenides (TMDs) provides unusual physical properties [1,2]and chemical reactivity [3,4], which can be influenced by defects such as dislocations [5,6]. For example, dislocations can act as nucleation sites for the onset of deformation when subjected to stress [7].
基金Project supported by the National Natural Science Foundation of China(Grant No.11190022)the National Basic Research Program of China(Grant Nos.2011CB921703 and 2011CBA00110)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07020300)
文摘The layered transition metal chalcogenides have been a fertile land in solid state physics for many decades. Various MX2-type transition metal dichalcogenides, such as WTe2, IrTe2, and MoS2, have triggered great attention recently, either for the discovery of novel phenomena or some extreme or exotic physical properties, or for their potential applications. PdTe2 is a superconductor in the class of transition metal dichalcogenides, and superconductivity is enhanced in its Cu- intercalated form, Cuo.05PdTe2. It is important to study the electronic structures of PdTe2 and its intercalated form in order to explore for new phenomena and physical properties and understand the related superconductivity enhancement mecha- nism. Here we report systematic high resolution angle-resolved photoemission （ARPES） studies on PdTe2 and Cuo.05PdTe2 single crystals, combined with the band structure calculations. We present in detail for the first time the complex multi-band Fermi surface topology and densely-arranged band structure of these compounds. By carefully examining the electronic structures of the two systems, we find that Cu-intercalation in PdTe2 results in electron-doping, which causes the band structure to shift downwards by nearly 16 meV in Cuo.05PdTe2. Our results lay a foundation for further exploration and investigation on PdTe2 and related superconductors.
基金Supported by the University of Malaya under Grant No PG173-2015B
文摘We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as saturable absorber (SA). These materials are fabricated via a simple drop-casting method. By employing WS<sub>2</sub>, we obtain a stable harmonic mode-locking at the threshold pump power of 184 mW, and the generated soliton pulse has 3.48 MHz of repetition rate. At the maximum pump power of 250 mW, we also obtain a small value of pulse duration, 2.43 ps with signal-to-noise ratio (SNR) of 57 dB. For MoS<sub>2</sub> SA, the pulse is generated at 105 mW pump power with repetition rate of 1.16 MHz. However, the pulse duration cannot be detected by the autocorrelator device as the pulse duration recorded is 468 ns, with the SNR value of 35 dB.
文摘We use laser-scanning nonlinear imaging microscopy in atomically thin transition metal dichalcogenides(TMDs)to reveal information on the crystalline orientation distribution,within the 2D lattice.In particular,we perform polarization-resolved second-harmonic generation(PSHG)imaging in a stationary,raster-scanned chemical vapor deposition(CVD)-grown WS2 flake,in order to obtain with high precision a spatially resolved map of the orientation of its main crystallographic axis(armchair orientation).By fitting the experimental PSHG images of sub-micron resolution into a generalized nonlinear model,we are able to determine the armchair orientation for every pixel of the image of the 2D material,with further improved resolution.This pixel-wise mapping of the armchair orientation of 2D WS2 allows us to distinguish between different domains,reveal fine structure,and estimate the crystal orientation variability,which can be used as a unique crystal quality marker over large areas.The necessity and superiority of a polarization-resolved analysis over intensity-only measurements is experimentally demonstrated,while the advantages of PSHG over other techniques are analysed and discussed.
基金J.H.Teng acknowledges A*STAR for funding support in Grants A20E5c0084,A2083c0058 and CRF SC25/21-110318.
文摘Transition metal dichalcogenides(TMDs)and perovskites are among the most attractive and widely investigated semiconductors in the recent decade.They are promising materials for various applications,such as photodetection,solar energy harvesting,light emission,and many others.Combining these materials to form heterostructures can enrich the already fascinating properties and bring up new phenomena and opportunities.Work in this field is growing rapidly in both fundamental studies and device applications.Here,we review the recent findings in the perovskite-TMD heterostructures and give our perspectives on the future development of this promising field.The fundamental properties of the perovskites,TMDs,and their heterostructures are discussed first,followed by a summary of the synthesis methods of the perovskites and TMDs and the approaches to obtain high-quality interfaces.Particular attention is paid to the TMD-perovskite heterostructures that have been applied in solar cells and photodetectors with notable performance improvement.Finally through our analysis,we propose an outline on further fundamental studies and the promising applications of perovskite-TMD heterostructures.
基金Project supported by the National Basic Research Program of China(Grant Nos.2012CB921300 and 2014CB920900)the National Key Research and Development Program of China(Grant No.2016YFA0300802)+1 种基金the National Natural Science Foundation of China(Grant Nos.11274015,11674013,and 21405109)the Recruitment Program of Global Experts,China,and Beijing Natural Science Foundation,China(Grant No.4142024)
文摘The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based in- formation processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many- particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel con- text of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity-resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley-related many-particle electronic states in semiconducting monolayer transitional metal dichalcogenides.
基金Scientific and Technological Research of Chongqing Municipal Education Commission(Grant No.KJZD-K202100602)the funding of Institute for Advanced Sciences of Chongqing University of Posts and Telecommunications(Grant No.E011A2022326)。
文摘The investigation of thermal transport is crucial to the thermal management of modern electronic devices.To obtain the thermal conductivity through solution of the Boltzmann transport equation,calculation of the anharmonic interatomic force constants has a high computational cost based on the current method of single-point density functional theory force calculation.The recent suggested machine learning interatomic potentials(MLIPs)method can avoid these huge computational demands.In this work,we study the thermal conductivity of two-dimensional MoS_(2)-like hexagonal boron dichalcogenides(H-B_(2)VI_(2);V I=S,Se,Te)with a combination of MLIPs and the phonon Boltzmann transport equation.The room-temperature thermal conductivity of H-B_(2)S_(2)can reach up to 336 W·m^(-1)·K^(-1),obviously larger than that of H-B_(2)Se_(2)and H-B_(2)Te_(2).This is mainly due to the difference in phonon group velocity.By substituting the different chalcogen elements in the second sublayer,H-B_(2)VIV I′have lower thermal conductivity than H-B_(2)VI_(2).The room-temperature thermal conductivity of B2STe is only 11%of that of H-B_(2)S_(2).This can be explained by comparing phonon group velocity and phonon relaxation time.The MLIP method is proved to be an efficient method for studying the thermal conductivity of materials,and H-B_(2)S_(2)-based nanodevices have excellent thermal conduction.
基金Project supported by the National Natural Science Foundation of China(Grant No.11904155)。
文摘The Janus monolayer transition metal dichalcogenides(TMDs)MXY(M=Mo,W,etc.and X,Y=S,Se,etc.)have been successfully synthesized in recent years.The Rashba spin splitting in these compounds arises due to the breaking of out-of-plane mirror symmetry.Here we study the pairing symmetry of superconducting Janus monolayer TMDs within the weak-coupling framework near critical temperature Tc,of which the Fermi surface(FS)sheets centered around bothΓand K(K′)points.We find that the strong Rashba splitting produces two kinds of topological superconducting states which differ from that in its parent compounds.More specifically,at relatively high chemical potentials,we obtain a timereversal invariant s+f+p-wave mixed superconducting state,which is fully gapped and topologically nontrivial,i.e.,a Z_(2) topological state.On the other hand,a time-reversal symmetry breaking d+p+f-wave superconducting state appears at lower chemical potentials.This state possess a large Chern number|C|=6 at appropriate pairing strength,demonstrating its nontrivial band topology.Our results suggest the Janus monolayer TMDs to be a promising candidate for the intrinsic helical and chiral topological superconductors.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0204904 and 2019YFA0210004)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000)the Fundamental Research Funds for the Central Universities,China(Grant No.WK3510000013).
文摘Monolayer transition metal dichalcogenides can normally exist in several structural polymorphs with distinct electrical,optical,and catalytic properties.Effective control of the relative stability and transformation of different phases in these materials is thus of critical importance for applications.Using density functional theory calculations,we investigate the effects of low-work-function metal substrates including Ti,Zr,and Hf on the structural,electronic,and catalytic properties of monolayer MoS_(2) and WS_(2).The results indicate that such substrates not only convert the energetically stable structure from the 1H phase to the 1T'/1T phase,but also significantly reduce the kinetic barriers of the phase transformation.Furthermore,our calculations also indicate that the 1T' phase of MoS_(2) with Zr or Hf substrate is a potential catalyst for the hydrogen evolution reaction.
文摘The hydrogenic donor impurity states and intersubband optical absorption spectra in monolayer transition metal dichalcogenides(ML TMDs) under dielectric environments are theoretically investigated based on a two-dimensional(2D)nonorthogonal associated Laguerre basis set. The 2D quantum confinement effect together with the strongly reduced dielectric screening results in the strong attractive Coulomb potential between electron and donor ion, with exceptionally large impurity binding energy and huge intersubband oscillator strength. These lead to the strong interaction of the electron with light in a 2D regime. The intersubband optical absorption spectra exhibit strong absorption lines of the non-hydrogenic Rydberg series in the mid-infrared range of light. The strength of the Coulomb potential can be controlled by changing the dielectric environment. The electron affinity difference leads to charge transfer between ML TMD and the dielectric environment, generating the polarization-electric field in ML TMD accompanied by weakening the Coulomb interaction strength. The larger the dielectric constant of the dielectric environment, the more the charge transfer is, accompanied by the larger polarization-electric field and the stronger dielectric screening. The dielectric environment is shown to provide an efficient tool to tune the wavelength and output of the mid-infrared intersubband devices based on ML TMDs.
基金Project supported by the Science Fund for Distinguished Young Scholars of Hunan Province(Grant No.2022J10002)the National Key Research and Development Program of China(Grant No.2021YFA1200503)the Fundamental Research Funds for the Central Universities from China。
文摘Monolayer group-VIB transition metal dichalcogenides(TMDs)feature low-energy massive Dirac fermions,which have valley contrasting Berry curvature.This nontrivial local band topology gives rise to valley Hall transport and optical selection rules for interband transitions that open up new possibilities for valleytronics.However,the large bandgap in TMDs results in relatively small Berry curvature,leading to weak valley contrasting physics in practical experiments.Here,we show that Dirac fermions with tunable large Berry curvature can be engineered in moirésuperlattice of TMD heterobilayers.These moiréDirac fermions are created in a magnified honeycomb lattice with its sublattice degree of freedom formed by two local moirépotential minima.We show that applying an on-site potential can tune the moiréflat bands into helical ones.In short-period moirésuperlattice,we find that the two moirévalleys become asymmetric,which results in a net spin Hall current.More interestingly,a circularly polarized light drives these moiréDirac fermions into quantum anomalous Hall phase with chiral edge states.Our results open a new possibility to design the moiré-scale spin and valley physics using TMD moiréstructures.
基金support from National Natural Science Foundation of China(Grant Nos.62205223)Natural Science Foundation of Guangdong Province(Grant Nos.2023A1515011455)+6 种基金Science and Technology Innovation Commission of Shenzhen(Grant Nos.20231121120748002)support from Guangdong Introducing Innovative and Entrepreneurial Teams(Grant Nos.2019ZT08L101)Natural Science Foundation of Guangdong Province(Grant Nos.2023A1515110091)Science and Technology Innovation Commission of Shenzhen(Grant Nos.JSGGKQTD20221101115701006)support from National Key R&D Program of China(Grant Nos.2021YFA1401100)National Natural Science Foundation of China(Grant Nos.12104317)Scientific Instrument Developing Project of Shenzhen University(Grant Nos.2023YQ003)。
文摘Two-dimensional transition metal dichalcogenides(2D TMDCs)have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility,electonic structure,and optical properties.The strain-induced out-of-plane deformations in 2D TMDCs lead to diverse excitonic behaviors and versatile modulations in optical properties,paving the way for the development of advanced quantum technologies,flexible optoelectronic materials,and straintronic devices.Research on local strain engineering on 2D TMDCs has been delved into fabrication techniques,electronic state variations,and quantum optical applications.This review begins by summarizing the state-of-the-art methods for introducing local strain into 2D TMDCs,followed by an exploration of the impact of local strain engineering on optical properties.The intriguing phenomena resulting from local strain,such as exciton funnelling and anti-funnelling,are also discussed.We then shift the focus to the application of locally strained 2D TMDCs as quantum emitters,with various strategies outlined for modulating the properties of TMDC-based quantum emitters.Finally,we discuss the remaining questions in this field and provide an outlook on the future of local strain engineering on 2D TMDCs.
基金This work was supported by National Key R&D Program of China(2021YFF1200200)Peiyang Talents Project of Tianjin University.
文摘Transition metal dichalcogenides(TMDs)are a promising class of layered materials in the post-graphene era,with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior.Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties,providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs.The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable(opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts(0–100%).Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase,band alignment/structure,carrier density,and surface reactive activity,enabling novel and promising applications.This review comprehensively elaborates on atomically substitutional engineering in TMD layers,including theoretical foundations,synthetic strategies,tailored properties,and superior applications.The emerging type of ternary TMDs,Janus TMDs,is presented specifically to highlight their typical compounds,fabrication methods,and potential applications.Finally,opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1405500)the National Natural Science Foundation of China(Grant Nos.52372257 and 52072188)。
文摘High-pressure studies of two-dimensional materials have revealed numerous novel properties and physical mechanisms behind them.As a typical material of transition metal dichalcogenides(TMDs),ZrSe_(2)exhibits high carrier mobility,rich electronic states regulated by doping,and high potential in applications at ambient pressure.However,the properties of ZrSe_(2)under pressure are still not clear,especially for the structural and electrical properties.Here,we report the investigation of ZrSe_(2)under pressure up to 66.5 GPa by in-situ x-ray diffraction,Raman,electrical transport measurements,and first-principles calculations.Two structural phase transitions occur in ZrSe_(2)at 8.3 GPa and 31.5 GPa,from P-3m1 symmetry to P2_(1)/m symmetry,and finally transformed into a non-layer I4/mmm symmetry structure.Pressure-induced metallic transition is observed at around 19.4 GPa in phaseⅡwhich aligns well with the results of the calculation.Our work will help to improve the understanding of the evolution of the structure and electrical transport properties of two-dimensional materials.
基金supported by the National Natural Science Foundation of China (Grant No. 12304072)Program for Science and Technology Innovation Team in Zhejiang (Grant No. 2021R01004)+1 种基金Natural Science Foundation of Ningbo(Grant No. 2021J121)supported by the User Experiment Assist System of Shanghai Synchrotron Radiation Facility (SSRF)。
文摘Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) under high pressure by electrical resistance investigations,synchrotron x-ray diffraction,Raman scattering and theoretical calculations.Up to 70 GPa,an unusual metal-semiconductor-metal transition occurs.Our first-principles calculations suggest that the observed anti-Wilson transition from metal to semiconductor at 17 GPa is due to the electron localization induced by the intercalated Ti atoms.This electron localization is attributed to the strengthened coupling between the doped Ti atoms and S atoms,and the Anderson localization arising from the disordered intercalation.At pressures exceeding 30.5 GPa,the doped TiS_(2) undergoes a re-metallization transition initiated by a crystal structure phase transition.We assign the most probable space group as P2_(1)2_(1)2_(1).Our findings suggest that materials probably will eventually undergo the Wilson transition when subjected to sufficient pressure.
