The water Cherenkov detector array(WCDA) is an important part of the large high-altitude air shower observatory(LHAASO),which is in a research and development phase.The central scientific goal of LHAASO is to explore ...The water Cherenkov detector array(WCDA) is an important part of the large high-altitude air shower observatory(LHAASO),which is in a research and development phase.The central scientific goal of LHAASO is to explore the origin of high-energy cosmic rays of the universe and to push forward the frontier of new physics.To simplify the WCDA's readout electronics,a prototype of a front-end readout for an application-specific integrated circuit(ASIC) is designed based on the timeover-threshold method to achieve charge-to-time conversion.High-precision time measurement and charge measurement are necessary over a full dynamic range[1-4000photoelectrons(P.E.)].To evaluate the performance of this ASIC,a test system is designed that includes the front-end ASIC test module,digitization module,and test software.The first module needs to be customized for different ASIC versions,whereas the digitization module and test software are tested for general-purpose use.In the digitization module,a field programmable gate array-based time-todigital converter is designed with a bin size of 333 ps,which also integrates an inter-integrated circuit to configure the ASIC test module,and a universal serial bus interface is designed to transfer data to the remote computer.Test results indicate that the time resolution is better than 0.5 ns,and the charge resolution is better than 30%root mean square(RMS) at 1 P.E.and 3%RMS at 4000 P.E.,which are beyond the application requirements.展开更多
Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical ...Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.展开更多
Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically....Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.展开更多
As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and ...As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics,flexible electronics,and focal-plane photodetector.However,to realize the all-aspects application of MoS_(2),the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization.Although the MoS_(2)grain size has already improved from several micrometers to sub-millimeters,the high-quality growth of wafer-scale MoS_(2)is still of great challenge.Herein,this review mainly focuses on the evolution of MoS_(2)by including chemical vapor deposition,metal–organic chemical vapor deposition,physical vapor deposition,and thermal conversion technology methods.The state-of-the-art research on the growth and optimization mechanism,including nucleation,orientation,grain,and defect engineering,is systematically summarized.Then,this review summarizes the wafer-scale application of MoS_(2)in a transistor,inverter,electronics,and photodetectors.Finally,the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_(2).展开更多
The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The...The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The overall size of the circuit is large,usually reaches hundreds of microns.Besides,it is difficult to balance the ultrafast response and ultra-low energy consumption problem,and the crosstalk between two traditional devices is difficult to overcome.Here,we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density,ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate.The feature size of the whole circuit is only 2.5μm×7μm,and that of a single device is 2μm×2μm.The distance between two adjacent devices is as small as 1.5μm,within wavelength magnitude scale.Theoretical response time of the circuit is 150 fs,and the threshold energy is within 10 fJ/bit.We have also considered the crosstalk problem.The circuit also realizes a function of identifying two-digit logic signal results.Our work provides a new idea for the design of ultrafast,ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.展开更多
A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteri...A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.展开更多
An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating mo...An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.展开更多
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transf...A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.展开更多
Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular syn...Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular synthesis algorithm often only accounts for a specific function with a specific cell configuration.In this paper,we try to synthesize the programmable waveguide mesh to support multiple configurations with a more general digital signal processing platform.To show the feasibility of this technique,photonic waveguide meshes in different configurations(square,triangular and hexagonal meshes)are designed to realize optical signal interleaving with arbitrary duty cycles.The digital signal processing(DSP)approach offers an effective pathway for the establishment of a general design platform for the software-defined programmable photonic integrated circuits.The use of well-developed DSP techniques and algorithms establishes a link between optical and electrical signals and makes it convenient to realize the computer-aided design of optics–electronics hybrid systems.展开更多
In this review,the advanced microwave devices based on the integrated passive device(IPD)technology are expounded and discussed in detail,involving the performance breakthroughs and circuit innovations.Then,the develo...In this review,the advanced microwave devices based on the integrated passive device(IPD)technology are expounded and discussed in detail,involving the performance breakthroughs and circuit innovations.Then,the development trend of IPD-based multifunctional microwave circuits is predicted further by analyzing the current research hot spots.This paper discusses a distinctive research area for microwave circuits and mobile-terminal radio-frequency integrated chips.展开更多
Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic ...Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic types: one is transition between the same kind of transmission lines on different planes of a common substrate, the other transition between different types of transmission lines. Furthermore, future development of transition structures is discussed.展开更多
A CMOS front-end integrated circuit consisting of 16 identical analog channels is proposed for semiconductor radiation detectors. Each of the 16 channels has a low noise charge sensitive amplifier, a pulse shaper, a p...A CMOS front-end integrated circuit consisting of 16 identical analog channels is proposed for semiconductor radiation detectors. Each of the 16 channels has a low noise charge sensitive amplifier, a pulse shaper, a peak detect and hold circuit and a discriminator, while analog voltage and channel address are routed off the chip. It can accommodate both electron and hole collection with selectable gain and peaking time. Sequential and sparse readout, combining with self-trigger and external trigger, makes four readout modes. The circuit is implemented in a 0.35 μm DP4M (double-poly-quad-metal) CMOS technology with an area of 2.5×1.54 mm2 and power dissipation of 60 mW. A single channel chip is tested with Verigy 93000. The gain is adjustable from 13 to 130 mV·fC–1 while the peaking time varies between 0.7 and 1.6 μs. The linearity is more than 99% and the equivalent noise charge is about 600e.展开更多
With the advancement of photonic integration technology,ultra-low linewidth frequency-stabilized lasers have demonstrated significant potential in precision measurement,quantum communication,atomic clocks,etc.This rev...With the advancement of photonic integration technology,ultra-low linewidth frequency-stabilized lasers have demonstrated significant potential in precision measurement,quantum communication,atomic clocks,etc.This review summarizes the latest developments in integrated photonics for achieving ultra-low linewidth lasers,particularly breakthroughs made by integrating Brillouin lasers.We discuss the design principles,manufacturing processes,performance characteristics,and potential value of these lasers in various applications.展开更多
线性雪崩光电二极管(Avalanche photodiode,APD)焦平面红外探测器有着广泛应用场景,APD探测器耦合具有多种模式的读出电路可在有限像元面积内实现多模式探测,提升探测系统集成度。本文设计了一种具有红外热成像模式、门控3D成像模式、...线性雪崩光电二极管(Avalanche photodiode,APD)焦平面红外探测器有着广泛应用场景,APD探测器耦合具有多种模式的读出电路可在有限像元面积内实现多模式探测,提升探测系统集成度。本文设计了一种具有红外热成像模式、门控3D成像模式、激光测距模式和异步激光脉冲探测模式的APD读出电路,四种模式复用输入级电路。通过Krummenacher结构抑制背景辐射影响,扩展了光子飞行时间探测范围;提出一种改进型时刻鉴别电路,通过减小时刻鉴别误差提升距离测量精度。读出电路采用0.18μm 3.3 V CMOS工艺设计,阵列规模128×128、像元中心距30μm,最大电荷容量3.74 Me^(-)。仿真结果表明,激光测距模式,在积分电容13 f F、背景电流1~150 nA条件下,背景电流响应幅值≤1.35 m V,远小于激光响应电流500 nA时280 m V的响应幅值;异步激光脉冲探测模式的幅值灵敏度约110 nA、脉宽灵敏度约4 ns;改进型时刻鉴别电路对于150~500 nA的激光脉冲响应,时刻鉴别误差约4 ns。本文设计的多模式复用APD读出电路具有一定工程应用价值。展开更多
基金supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(KJCX2-YW-N27)the CAS Center for Excellence in Particle Physics(CCEPP)
文摘The water Cherenkov detector array(WCDA) is an important part of the large high-altitude air shower observatory(LHAASO),which is in a research and development phase.The central scientific goal of LHAASO is to explore the origin of high-energy cosmic rays of the universe and to push forward the frontier of new physics.To simplify the WCDA's readout electronics,a prototype of a front-end readout for an application-specific integrated circuit(ASIC) is designed based on the timeover-threshold method to achieve charge-to-time conversion.High-precision time measurement and charge measurement are necessary over a full dynamic range[1-4000photoelectrons(P.E.)].To evaluate the performance of this ASIC,a test system is designed that includes the front-end ASIC test module,digitization module,and test software.The first module needs to be customized for different ASIC versions,whereas the digitization module and test software are tested for general-purpose use.In the digitization module,a field programmable gate array-based time-todigital converter is designed with a bin size of 333 ps,which also integrates an inter-integrated circuit to configure the ASIC test module,and a universal serial bus interface is designed to transfer data to the remote computer.Test results indicate that the time resolution is better than 0.5 ns,and the charge resolution is better than 30%root mean square(RMS) at 1 P.E.and 3%RMS at 4000 P.E.,which are beyond the application requirements.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
文摘Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.
基金Project supported by the National Natural Science Foundation of China （Grant No 90607023）, Shanghai Pujiang Program （Grant No 05PJ14017）, SRF for R0CS, SEM, and the Micro/Nano-electronics Science and Technology Innovation Platform （985） and the Ministry of Education of China in the International Research Training Group ＂Materials and Concepts for Advanced Interconnects
文摘Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.
基金financially the National Natural Science Foundation of China(52002254,52272160)Sichuan Science and Technology Foundation(2020YJ0262,2021YFH0127,2022YFSY0045,2022YFH0083 and 23SYSX0060)+3 种基金the Chunhui plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(YJ201893)the Open-Foundation of Key Laboratory of Laser Device Technology,China North Industries Group Corporation Limited(Grant No.KLLDT202104)the foundation of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202210)the 2035-Plan of Sichuan University。
文摘As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics,flexible electronics,and focal-plane photodetector.However,to realize the all-aspects application of MoS_(2),the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization.Although the MoS_(2)grain size has already improved from several micrometers to sub-millimeters,the high-quality growth of wafer-scale MoS_(2)is still of great challenge.Herein,this review mainly focuses on the evolution of MoS_(2)by including chemical vapor deposition,metal–organic chemical vapor deposition,physical vapor deposition,and thermal conversion technology methods.The state-of-the-art research on the growth and optimization mechanism,including nucleation,orientation,grain,and defect engineering,is systematically summarized.Then,this review summarizes the wafer-scale application of MoS_(2)in a transistor,inverter,electronics,and photodetectors.Finally,the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_(2).
基金the National Key Research and Development Program of China under Grant No.2018YFB2200403the National Natural Science Foundation of China under Grant Nos.11734001,91950204,92150302.
文摘The basic indexes of all-optical integrated photonic circuits include high-density integration,ultrafast response and ultralow energy consumption.Traditional methods mainly adopt conventional micro/nano-structures.The overall size of the circuit is large,usually reaches hundreds of microns.Besides,it is difficult to balance the ultrafast response and ultra-low energy consumption problem,and the crosstalk between two traditional devices is difficult to overcome.Here,we propose and experimentally demonstrate an approach based on inverse design method to realize a high-density,ultrafast and ultra-low energy consumption integrated photonic circuit with two all-optical switches controlling the input states of an all-optical XOR logic gate.The feature size of the whole circuit is only 2.5μm×7μm,and that of a single device is 2μm×2μm.The distance between two adjacent devices is as small as 1.5μm,within wavelength magnitude scale.Theoretical response time of the circuit is 150 fs,and the threshold energy is within 10 fJ/bit.We have also considered the crosstalk problem.The circuit also realizes a function of identifying two-digit logic signal results.Our work provides a new idea for the design of ultrafast,ultra-low energy consumption all-optical devices and the implementation of high-density photonic integrated circuits.
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA010203the National Basic Research Program of China under Grant Nos 2011CB201704 and 2010CB327502the National Natural Science Foundation of China under Grant Nos 61434006 and 61106074
文摘A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0204600the National Natural Science Foundation of China under Grant No 61404002the Science and Technology Project of Hunan Province under Grant No 2015JC3041
文摘An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.
基金Supported by the Key Laboratory of Microsatellites,Chinese Academy of Sciences
文摘A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.
文摘Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular synthesis algorithm often only accounts for a specific function with a specific cell configuration.In this paper,we try to synthesize the programmable waveguide mesh to support multiple configurations with a more general digital signal processing platform.To show the feasibility of this technique,photonic waveguide meshes in different configurations(square,triangular and hexagonal meshes)are designed to realize optical signal interleaving with arbitrary duty cycles.The digital signal processing(DSP)approach offers an effective pathway for the establishment of a general design platform for the software-defined programmable photonic integrated circuits.The use of well-developed DSP techniques and algorithms establishes a link between optical and electrical signals and makes it convenient to realize the computer-aided design of optics–electronics hybrid systems.
基金Beijing Natural Science Foundation(No.JQ19018)National Natural Science Foundations of China(No.U20A20203 and No.61971052)National Special Support Program for High-Level Personnel Recruitment(No.2018RA2131)。
文摘In this review,the advanced microwave devices based on the integrated passive device(IPD)technology are expounded and discussed in detail,involving the performance breakthroughs and circuit innovations.Then,the development trend of IPD-based multifunctional microwave circuits is predicted further by analyzing the current research hot spots.This paper discusses a distinctive research area for microwave circuits and mobile-terminal radio-frequency integrated chips.
基金Supported by the Specialized Research Fund for the Doctoral Program of Higher Education (No.20010614003) and the Key Project of Chinese Ministry of Education(No.104166).
文摘Advances in developing transitions in microwave integrated circuits during the last ten years are reviewed. Some typical structures of transition are introduced. Transition structures can be classified into two basic types: one is transition between the same kind of transmission lines on different planes of a common substrate, the other transition between different types of transmission lines. Furthermore, future development of transition structures is discussed.
基金Supported by the National Natural Science Foundation of China (No.40704025)
文摘A CMOS front-end integrated circuit consisting of 16 identical analog channels is proposed for semiconductor radiation detectors. Each of the 16 channels has a low noise charge sensitive amplifier, a pulse shaper, a peak detect and hold circuit and a discriminator, while analog voltage and channel address are routed off the chip. It can accommodate both electron and hole collection with selectable gain and peaking time. Sequential and sparse readout, combining with self-trigger and external trigger, makes four readout modes. The circuit is implemented in a 0.35 μm DP4M (double-poly-quad-metal) CMOS technology with an area of 2.5×1.54 mm2 and power dissipation of 60 mW. A single channel chip is tested with Verigy 93000. The gain is adjustable from 13 to 130 mV·fC–1 while the peaking time varies between 0.7 and 1.6 μs. The linearity is more than 99% and the equivalent noise charge is about 600e.
基金This research is partially funded by the Natural Science Foundation of China Project under Grant Nos.61925104 and 62031011the Key Re⁃search and Development Program of Jiangsu Province under Grant No.BE2021008-5.
文摘With the advancement of photonic integration technology,ultra-low linewidth frequency-stabilized lasers have demonstrated significant potential in precision measurement,quantum communication,atomic clocks,etc.This review summarizes the latest developments in integrated photonics for achieving ultra-low linewidth lasers,particularly breakthroughs made by integrating Brillouin lasers.We discuss the design principles,manufacturing processes,performance characteristics,and potential value of these lasers in various applications.
文摘线性雪崩光电二极管(Avalanche photodiode,APD)焦平面红外探测器有着广泛应用场景,APD探测器耦合具有多种模式的读出电路可在有限像元面积内实现多模式探测,提升探测系统集成度。本文设计了一种具有红外热成像模式、门控3D成像模式、激光测距模式和异步激光脉冲探测模式的APD读出电路,四种模式复用输入级电路。通过Krummenacher结构抑制背景辐射影响,扩展了光子飞行时间探测范围;提出一种改进型时刻鉴别电路,通过减小时刻鉴别误差提升距离测量精度。读出电路采用0.18μm 3.3 V CMOS工艺设计,阵列规模128×128、像元中心距30μm,最大电荷容量3.74 Me^(-)。仿真结果表明,激光测距模式,在积分电容13 f F、背景电流1~150 nA条件下,背景电流响应幅值≤1.35 m V,远小于激光响应电流500 nA时280 m V的响应幅值;异步激光脉冲探测模式的幅值灵敏度约110 nA、脉宽灵敏度约4 ns;改进型时刻鉴别电路对于150~500 nA的激光脉冲响应,时刻鉴别误差约4 ns。本文设计的多模式复用APD读出电路具有一定工程应用价值。
