The well controllable selective growth of carbon nanotubes (CNTs)on the desired area is an important issue for their future applications. In this study, a novel method for selective growth of CNTs was proposed by usin...The well controllable selective growth of carbon nanotubes (CNTs)on the desired area is an important issue for their future applications. In this study, a novel method for selective growth of CNTs was proposed by using the technology of self-assembly monolayers (SAMs) and the Fe-assisted CNTs growth. The Si wafers with the a : Si/Si3N4 layer patterns were first prepared by low pressure chemical vapor deposition (LPCVD)and lithography techniques to act as the substrates for selective deposition of SAMs. The selectivity of SAMs from APTMS solution (N-(2-aminoethyl)-3-aminopropyltrimethoxsilane) is based on its greater reactivity of head group on a-Si than Si3N4 films. The areas of pattern with SAMs will first chelate the Fe3+ ions by their diamine-terminated group. The Fe3+ ions were then consolidated to become Fe-hydroxides in sodium boron hydride solution to form the Fe-hydroxides pattern. Finally, the Fe-hydroxides pattern was pretreated in H plasma to become a well-distributed Fe nano-particles on the surface, and followed by CNTs deposition using Fe as catalyst in a microwave plasma-chemical vapor deposition (MP-CVD) system to become the CNTs pattern. The products in each processing step, including microstructures and lattice images of CNTs, were characterized by contact angle measurements, scanning electron microscopy (SEM), XPS, Auger spectroscopy, transmission electron microscopy (TEM) and high resolution TEM (HRTEM)deposition. The results show that the main process parameters include the surface activation process and its atmosphere, consolidation time and temperature, H plasma pretreatment. The function of each processing step will be discussed.展开更多
Well aligned nanotubes with diameter of 30—50 nm have been synthesized on a porous alumina template by microwave plasma enhanced chemical vapor deposition (MW PECVD). By this means, the control over either diameter o...Well aligned nanotubes with diameter of 30—50 nm have been synthesized on a porous alumina template by microwave plasma enhanced chemical vapor deposition (MW PECVD). By this means, the control over either diameter or length of the nanotubes could be realized. The hollow structure and vertically aligned features have been verified by scanning electron and transmission electron microscopic images. In comparison with the reported fabrication methods, lower synthesis temperature (below 520 ℃) and simpler process (no negative dc bias applied) have been achieved, which could be of great importance for both theoretical research and pratical applications.展开更多
Among the three main methods for the s ynthesis of carbon nanotubes(CNTs ),chemical vapor deposition(CVD)has received a great deal of attentio n since CNTs can be synthesized at sig nificantly low temperature.Plasma c...Among the three main methods for the s ynthesis of carbon nanotubes(CNTs ),chemical vapor deposition(CVD)has received a great deal of attentio n since CNTs can be synthesized at sig nificantly low temperature.Plasma chemical vapor deposition me thods can synthesize CNTs at lower te mperature than thermal CVD.But in th e usual catalytic growth of CNTs by CVD,CNTs are often tangled together and have some defects.These will limit t he property research and potential applications.How to synthesize the str aight CNTs at low temperature become s a challenging issue.In this letter,s traight carbon nanotube(CNT)films were achieved by microwave pla sma chemical vapor deposition(MWPCVD)catalyzed by round Fe-Co-Ni alloy particles on Ni substrate at 610℃.It wa s found that,in our experimental condition,the uniform growth rate along the circumference of round alloy particles plays a very important role in the gro wth of straight CNT films.And because the substrate is conducting,the straight CNT films grown at low temperature ma y have the benefit for property research and offer the possibility to use t hem in the future applications.展开更多
文摘The well controllable selective growth of carbon nanotubes (CNTs)on the desired area is an important issue for their future applications. In this study, a novel method for selective growth of CNTs was proposed by using the technology of self-assembly monolayers (SAMs) and the Fe-assisted CNTs growth. The Si wafers with the a : Si/Si3N4 layer patterns were first prepared by low pressure chemical vapor deposition (LPCVD)and lithography techniques to act as the substrates for selective deposition of SAMs. The selectivity of SAMs from APTMS solution (N-(2-aminoethyl)-3-aminopropyltrimethoxsilane) is based on its greater reactivity of head group on a-Si than Si3N4 films. The areas of pattern with SAMs will first chelate the Fe3+ ions by their diamine-terminated group. The Fe3+ ions were then consolidated to become Fe-hydroxides in sodium boron hydride solution to form the Fe-hydroxides pattern. Finally, the Fe-hydroxides pattern was pretreated in H plasma to become a well-distributed Fe nano-particles on the surface, and followed by CNTs deposition using Fe as catalyst in a microwave plasma-chemical vapor deposition (MP-CVD) system to become the CNTs pattern. The products in each processing step, including microstructures and lattice images of CNTs, were characterized by contact angle measurements, scanning electron microscopy (SEM), XPS, Auger spectroscopy, transmission electron microscopy (TEM) and high resolution TEM (HRTEM)deposition. The results show that the main process parameters include the surface activation process and its atmosphere, consolidation time and temperature, H plasma pretreatment. The function of each processing step will be discussed.
文摘Well aligned nanotubes with diameter of 30—50 nm have been synthesized on a porous alumina template by microwave plasma enhanced chemical vapor deposition (MW PECVD). By this means, the control over either diameter or length of the nanotubes could be realized. The hollow structure and vertically aligned features have been verified by scanning electron and transmission electron microscopic images. In comparison with the reported fabrication methods, lower synthesis temperature (below 520 ℃) and simpler process (no negative dc bias applied) have been achieved, which could be of great importance for both theoretical research and pratical applications.
文摘Among the three main methods for the s ynthesis of carbon nanotubes(CNTs ),chemical vapor deposition(CVD)has received a great deal of attentio n since CNTs can be synthesized at sig nificantly low temperature.Plasma chemical vapor deposition me thods can synthesize CNTs at lower te mperature than thermal CVD.But in th e usual catalytic growth of CNTs by CVD,CNTs are often tangled together and have some defects.These will limit t he property research and potential applications.How to synthesize the str aight CNTs at low temperature become s a challenging issue.In this letter,s traight carbon nanotube(CNT)films were achieved by microwave pla sma chemical vapor deposition(MWPCVD)catalyzed by round Fe-Co-Ni alloy particles on Ni substrate at 610℃.It wa s found that,in our experimental condition,the uniform growth rate along the circumference of round alloy particles plays a very important role in the gro wth of straight CNT films.And because the substrate is conducting,the straight CNT films grown at low temperature ma y have the benefit for property research and offer the possibility to use t hem in the future applications.
