MEMS压力传感器的研制已相当成熟,但在高温领域却遇到了许多问题,为解决高温环境下压力测量的问题,文中介绍了一种新型Si C高温压力传感器电容芯片的设计方案。应用Ansys有限元分析软件进行热-结构耦合场仿真分析,常温下电容芯片的灵敏...MEMS压力传感器的研制已相当成熟,但在高温领域却遇到了许多问题,为解决高温环境下压力测量的问题,文中介绍了一种新型Si C高温压力传感器电容芯片的设计方案。应用Ansys有限元分析软件进行热-结构耦合场仿真分析,常温下电容芯片的灵敏度为1.3 p F/bar(1 bar=100 k Pa),300℃、500℃、700℃时灵敏度分别为1.4 p F/bar、1.54 p F/bar、1.74 p F/bar,表明这种结构在高温下仍具有较高的灵敏度,同时对结构进行模态仿真,由模态分析结果知,一阶频率为245 930 Hz,可知该结构具有很高的频响。展开更多
In order to design the inner and outer ring capacitance sensor used in measuring the correlation velocity of two phase flow and optimize its structure,the sensitivity characteristics of inner and outer ring capacitanc...In order to design the inner and outer ring capacitance sensor used in measuring the correlation velocity of two phase flow and optimize its structure,the sensitivity characteristics of inner and outer ring capacitance sensor were analyzed by using finite element simulation.The simulation experiment was planned by using orthogonal experimental design.From the simulation result,the major factors influencing the sensitivity characteristics(relative sensitivity and uniformity error) were obtained.The degree and tendency of influence of each factor on the sensitivity characteristics were given.The structural parameters of the sensor were determined.The analysis provided the theoretical basis for the inner and outer ring capacitance sensor.展开更多
针对空洞层上硅工艺在制作高质量的单晶硅感压膜和真空密封腔上的优势,提出了将其应用于制作电容式绝对压力传感器。应用板壳理论建立了传感器压力检测的理论膜型,对传感器的感压膜进行理论计算和有限元仿真,并利用电容变化模型分析了...针对空洞层上硅工艺在制作高质量的单晶硅感压膜和真空密封腔上的优势,提出了将其应用于制作电容式绝对压力传感器。应用板壳理论建立了传感器压力检测的理论膜型,对传感器的感压膜进行理论计算和有限元仿真,并利用电容变化模型分析了传感器的灵敏度。给出了基于Pcap01芯片的微电容检测系统的设计,对于半径为100μm,厚度为1. 7μm的圆形感压膜,初始电容值为0. 278 p F,传感器灵敏度为0. 86 f F/k Pa。展开更多
文摘MEMS压力传感器的研制已相当成熟,但在高温领域却遇到了许多问题,为解决高温环境下压力测量的问题,文中介绍了一种新型Si C高温压力传感器电容芯片的设计方案。应用Ansys有限元分析软件进行热-结构耦合场仿真分析,常温下电容芯片的灵敏度为1.3 p F/bar(1 bar=100 k Pa),300℃、500℃、700℃时灵敏度分别为1.4 p F/bar、1.54 p F/bar、1.74 p F/bar,表明这种结构在高温下仍具有较高的灵敏度,同时对结构进行模态仿真,由模态分析结果知,一阶频率为245 930 Hz,可知该结构具有很高的频响。
文摘In order to design the inner and outer ring capacitance sensor used in measuring the correlation velocity of two phase flow and optimize its structure,the sensitivity characteristics of inner and outer ring capacitance sensor were analyzed by using finite element simulation.The simulation experiment was planned by using orthogonal experimental design.From the simulation result,the major factors influencing the sensitivity characteristics(relative sensitivity and uniformity error) were obtained.The degree and tendency of influence of each factor on the sensitivity characteristics were given.The structural parameters of the sensor were determined.The analysis provided the theoretical basis for the inner and outer ring capacitance sensor.
文摘针对空洞层上硅工艺在制作高质量的单晶硅感压膜和真空密封腔上的优势,提出了将其应用于制作电容式绝对压力传感器。应用板壳理论建立了传感器压力检测的理论膜型,对传感器的感压膜进行理论计算和有限元仿真,并利用电容变化模型分析了传感器的灵敏度。给出了基于Pcap01芯片的微电容检测系统的设计,对于半径为100μm,厚度为1. 7μm的圆形感压膜,初始电容值为0. 278 p F,传感器灵敏度为0. 86 f F/k Pa。
