针对应用于同步辐射的硅像素探测器,设计了一种基于电流模式的像素型前端读出单元电路,像素单元电路主要包括电荷灵敏前置放大器、跨导放大器、电流甄别器、阈值调节电路和计数器等,实现了信号放大、电压转为电流、信号甄别以及计数等...针对应用于同步辐射的硅像素探测器,设计了一种基于电流模式的像素型前端读出单元电路,像素单元电路主要包括电荷灵敏前置放大器、跨导放大器、电流甄别器、阈值调节电路和计数器等,实现了信号放大、电压转为电流、信号甄别以及计数等功能。芯片基于SMIC 0.13μm/1.2V CMOS工艺设计,像素单元面积为100μm×100μm,仿真结果表明:像素单元静态功耗为50μW,等效噪声电荷低于100e-,不一致性小于100e-,能量甄别范围为8 ke V^20 ke V,达到了预期设计目标。与电压模式的像素单元电路相比,具有结构简单、功耗低、芯片面积小以及抗干扰能力强的特点。展开更多
A low power 640×480 OLED-on-silicon chip design that used in microdisplay was presented. A novel pixel circuit was proposed to meet the special requirement of OLED-on-silicon. The novel pixel consists of three tr...A low power 640×480 OLED-on-silicon chip design that used in microdisplay was presented. A novel pixel circuit was proposed to meet the special requirement of OLED-on-silicon. The novel pixel consists of three transistors and one capacitor （3T 1C）. It has simple structure and can effectively reduce the current glitch generated during the AC driving from 55 pA to 7.5 pA, so that it can improve the precision of grayscale of display as well as extend the lifetime of （]）LED material. Except for the pixel array, low power row driver, column driver and other functional modules were also integrated on the chip. Several techniques were adopted to reduce the power consumption and frequency requirement of the chip. Finally, a 16×3×12 resolution chip was fabricated with standard 0.35 μm CMOS process of CSM and the chip can operate correctly.展开更多
文摘针对应用于同步辐射的硅像素探测器,设计了一种基于电流模式的像素型前端读出单元电路,像素单元电路主要包括电荷灵敏前置放大器、跨导放大器、电流甄别器、阈值调节电路和计数器等,实现了信号放大、电压转为电流、信号甄别以及计数等功能。芯片基于SMIC 0.13μm/1.2V CMOS工艺设计,像素单元面积为100μm×100μm,仿真结果表明:像素单元静态功耗为50μW,等效噪声电荷低于100e-,不一致性小于100e-,能量甄别范围为8 ke V^20 ke V,达到了预期设计目标。与电压模式的像素单元电路相比,具有结构简单、功耗低、芯片面积小以及抗干扰能力强的特点。
基金Project(10ZCKFGX00200) supported by the Tianjin Science and Technology Supporting Plan,ChinaProject supported by the Fundamental Research Funds for the Central Universities of China
文摘A low power 640×480 OLED-on-silicon chip design that used in microdisplay was presented. A novel pixel circuit was proposed to meet the special requirement of OLED-on-silicon. The novel pixel consists of three transistors and one capacitor （3T 1C）. It has simple structure and can effectively reduce the current glitch generated during the AC driving from 55 pA to 7.5 pA, so that it can improve the precision of grayscale of display as well as extend the lifetime of （]）LED material. Except for the pixel array, low power row driver, column driver and other functional modules were also integrated on the chip. Several techniques were adopted to reduce the power consumption and frequency requirement of the chip. Finally, a 16×3×12 resolution chip was fabricated with standard 0.35 μm CMOS process of CSM and the chip can operate correctly.
