Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
基于标准N阱互补金属氧化物半导体集成电路(CM O S)工艺,设计了P+/N-w e ll/P-sub光电管结构和传统的N+/P-sub光电管结构的有源像素单元。像素单元面积为100μm×100μm,感光面积百分比分别为77.6%和89%,采用了上华0.6μm两层金属...基于标准N阱互补金属氧化物半导体集成电路(CM O S)工艺,设计了P+/N-w e ll/P-sub光电管结构和传统的N+/P-sub光电管结构的有源像素单元。像素单元面积为100μm×100μm,感光面积百分比分别为77.6%和89%,采用了上华0.6μm两层金属两层多晶硅CM O S工艺研制。测试分析结果表明P+/N-w e ll/P-sub结构在暗电流大小,光照响应信号大小,感光灵敏度和感光动态范围上均优于传统的N+/P-sub结构。通过改变复位信号频率,将P+/N-w e ll/P-sub结构像素的感光动态范围提高到139.8 dB,改善了有源像素的感光性能。展开更多
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
文摘基于标准N阱互补金属氧化物半导体集成电路(CM O S)工艺,设计了P+/N-w e ll/P-sub光电管结构和传统的N+/P-sub光电管结构的有源像素单元。像素单元面积为100μm×100μm,感光面积百分比分别为77.6%和89%,采用了上华0.6μm两层金属两层多晶硅CM O S工艺研制。测试分析结果表明P+/N-w e ll/P-sub结构在暗电流大小,光照响应信号大小,感光灵敏度和感光动态范围上均优于传统的N+/P-sub结构。通过改变复位信号频率,将P+/N-w e ll/P-sub结构像素的感光动态范围提高到139.8 dB,改善了有源像素的感光性能。
