Effects of ultrasonic bonding parameters on atomic diffusion, microstructure at the Al-Au interface, and shear strength of Al-Au ultrasonic bonding were investigated by the combining experiments and finite element (FE...Effects of ultrasonic bonding parameters on atomic diffusion, microstructure at the Al-Au interface, and shear strength of Al-Au ultrasonic bonding were investigated by the combining experiments and finite element (FE) simulation. The quantitative model of atomic diffusion, which is related to the ultrasonic bonding parameters, time and distance, is established to calculate the atomic diffusion of the Al-Au interface. The maximum relative error between the calculated and experimental fraction of Al atom is 7.35%, indicating high prediction accuracy of this model. During the process of ultrasonic bonding, Au8Al3 is the main intermetallic compound (IMC) at the Al-Au interface. With larger bonding forces, higher ultrasonic powers and longer bonding time, it is more difficult to remove the oxide particles from the Al-Au interface, which hinders the atomic diffusion. Therefore, the complicated stress state and the existence of oxide particles both promotes the formation of holes. The shear strength of Al-Au ultrasonic bonding increases with increasing bonding force, ultrasonic power and bonding time. However, combined with the presence of holes at especial parameters, the optimal ultrasonic bonding parameter is confirmed to be a bonding force of 23 gf, ultrasonic power of 75 mW and bonding time of 21 ms.展开更多
Nitrogen monoxide(NO) emitted from automobile exhaust and other industrial sources contributes largely to a variety of environmental problems, such as the formation of acid rain and photochemical smog Therefore, the c...Nitrogen monoxide(NO) emitted from automobile exhaust and other industrial sources contributes largely to a variety of environmental problems, such as the formation of acid rain and photochemical smog Therefore, the catalytic reduction of NO has become one of the urgent environmental issues In the present study, a series of Au/Mn 2O 3/Al 2O 3 catalysts, with different Mn 2O 3 loadings, were prepared by deposition precipitation The crystallite size of Au before and after reaction was characterized by XRD The activity of catalysts in the selective catalytic reduction of NO using propane in the presence of oxygen was evaluated It is found that the catalytic activity of Au/Mn 2O 3/Al 2O 3 is higher than that of Au/Al 2O 3 and Cu ZSM 5 at feed gas(0 6%NO+1 2%C 3H 8+5%O 2+He) and GHSV 5?000?h展开更多
以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜...以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。展开更多
基金Project(2022YFB3707201) supported by the National Key R&D Program of ChinaProject(U2341254) supported by the Ye Qisun Science Foundation of National Natural Science Foundation of China+1 种基金Projects(0604022GH0202143,0604022SH0201143) supported by the NPU Aoxiang Distinguished Young Scholars,ChinaProject supported by the Funding of Young Top-notch Talent of the National Ten Thousand Talent Program,China。
文摘Effects of ultrasonic bonding parameters on atomic diffusion, microstructure at the Al-Au interface, and shear strength of Al-Au ultrasonic bonding were investigated by the combining experiments and finite element (FE) simulation. The quantitative model of atomic diffusion, which is related to the ultrasonic bonding parameters, time and distance, is established to calculate the atomic diffusion of the Al-Au interface. The maximum relative error between the calculated and experimental fraction of Al atom is 7.35%, indicating high prediction accuracy of this model. During the process of ultrasonic bonding, Au8Al3 is the main intermetallic compound (IMC) at the Al-Au interface. With larger bonding forces, higher ultrasonic powers and longer bonding time, it is more difficult to remove the oxide particles from the Al-Au interface, which hinders the atomic diffusion. Therefore, the complicated stress state and the existence of oxide particles both promotes the formation of holes. The shear strength of Al-Au ultrasonic bonding increases with increasing bonding force, ultrasonic power and bonding time. However, combined with the presence of holes at especial parameters, the optimal ultrasonic bonding parameter is confirmed to be a bonding force of 23 gf, ultrasonic power of 75 mW and bonding time of 21 ms.
文摘Nitrogen monoxide(NO) emitted from automobile exhaust and other industrial sources contributes largely to a variety of environmental problems, such as the formation of acid rain and photochemical smog Therefore, the catalytic reduction of NO has become one of the urgent environmental issues In the present study, a series of Au/Mn 2O 3/Al 2O 3 catalysts, with different Mn 2O 3 loadings, were prepared by deposition precipitation The crystallite size of Au before and after reaction was characterized by XRD The activity of catalysts in the selective catalytic reduction of NO using propane in the presence of oxygen was evaluated It is found that the catalytic activity of Au/Mn 2O 3/Al 2O 3 is higher than that of Au/Al 2O 3 and Cu ZSM 5 at feed gas(0 6%NO+1 2%C 3H 8+5%O 2+He) and GHSV 5?000?h
文摘以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。
