An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition(MOCVD)technique.The experimental results show that the quantum...An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition(MOCVD)technique.The experimental results show that the quantum efficiency in the entire waveband region for the exponential-doping photocathodes grown by MOCVD is remarkably enhanced as compared to those grown by molecular beam epitaxy.As a result of the improved built-in electric fields and cathode performance parameters,the photoemission characteristics for the MOCVD-grown transmission-mode and reflection-mode AlGaAs/GaAs photocathodes are different over the wavelength region of interest.展开更多
文摘介绍了 AlGaAs/GaAs 多量子阱红外探测器(QWIP)暗电流与噪声的关系和降低暗电流的途径;基手湿法化学腐蚀工艺制作了300μm×300μm台面单元器件,并用变温液氦杜瓦测试系统在不同温度下对红外探测器暗电流进行了测试并分析。在温度小于40 K 时,随着温度的改变暗电流没有明显的变化;当温度大于40 K 时,暗电流随着温度的升高迅速变大,正、负偏压下 QWIP 暗电流具有不对称特性。
基金the National Natural Science Foundation of China under Grant Nos 61067001,61240042 and 61261009the Key Science and Technology Project of Henan Province of China under Grant No 112102210202.
文摘An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition(MOCVD)technique.The experimental results show that the quantum efficiency in the entire waveband region for the exponential-doping photocathodes grown by MOCVD is remarkably enhanced as compared to those grown by molecular beam epitaxy.As a result of the improved built-in electric fields and cathode performance parameters,the photoemission characteristics for the MOCVD-grown transmission-mode and reflection-mode AlGaAs/GaAs photocathodes are different over the wavelength region of interest.
