Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreas...Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreases by four times. The sheet resistance of polysilicon gate region decreases by one order of magnitute. Using this technology, the speed of the 3 μm NMOS 12-bits multiplier increases by two times relative to conventional one.展开更多
基于双铁心磁通门负反馈工作原理,设计了一种数字磁通门磁强计。利用可编程运算放大器实时调节磁通门输出信号的幅值,再经高速12 bit A/D转换成数字信号,用ARM微控制器完成相敏整流和积分运算,用高精度16 bit D/A输出反馈信号,构成闭环...基于双铁心磁通门负反馈工作原理,设计了一种数字磁通门磁强计。利用可编程运算放大器实时调节磁通门输出信号的幅值,再经高速12 bit A/D转换成数字信号,用ARM微控制器完成相敏整流和积分运算,用高精度16 bit D/A输出反馈信号,构成闭环系统。实验测试表明,该磁强计的量程为±62 000 nT,分辨率为1.9 nT,线性度达到了2.4×10-4。采用可编程运放结合12 bit A/D实现16 bit分辨率的设计方案,降低了磁强计成本,具有工程应用前景。展开更多
文摘Self-aligned Titanium Silicide (Salicide), Light-Doped Drain (LDD) technology was studied. Results show that, this technology suppresses effectivily short-channel effects. The sheet resistance of active region decreases by four times. The sheet resistance of polysilicon gate region decreases by one order of magnitute. Using this technology, the speed of the 3 μm NMOS 12-bits multiplier increases by two times relative to conventional one.
文摘基于双铁心磁通门负反馈工作原理,设计了一种数字磁通门磁强计。利用可编程运算放大器实时调节磁通门输出信号的幅值,再经高速12 bit A/D转换成数字信号,用ARM微控制器完成相敏整流和积分运算,用高精度16 bit D/A输出反馈信号,构成闭环系统。实验测试表明,该磁强计的量程为±62 000 nT,分辨率为1.9 nT,线性度达到了2.4×10-4。采用可编程运放结合12 bit A/D实现16 bit分辨率的设计方案,降低了磁强计成本,具有工程应用前景。
