O434.22 2004053723 紫外及可见光探测器光谱响应测试系统的研制=Study and development of spectral responsibility testing system for ultraviolet-visible detector[刊,中]/张辉(华北光电所,北京(100015)),刘建伟…∥激光与红外。...O434.22 2004053723 紫外及可见光探测器光谱响应测试系统的研制=Study and development of spectral responsibility testing system for ultraviolet-visible detector[刊,中]/张辉(华北光电所,北京(100015)),刘建伟…∥激光与红外。—2003,33(5)。展开更多
TN364．2 2005021317 InGaAs-APD门模单光子探测及其应用=Gated-mode sin- gle-photon detection and its applications using InGaAs- APD[刊,中]／周金运(广东工业大学应用物理学院．广东, 广州(510090)),彭孝东…//量子电子学报．-20...TN364．2 2005021317 InGaAs-APD门模单光子探测及其应用=Gated-mode sin- gle-photon detection and its applications using InGaAs- APD[刊,中]／周金运(广东工业大学应用物理学院．广东, 广州(510090)),彭孝东…//量子电子学报．-2004,21 (4)．-401-405 对单光子探测使用InGaAs-APD并采用门模控制的 核心问题进行了阐述,总结了探测器件的特性和门模控制 系统的特点,归纳了在这种探测方式中实际存在的问题和 可能解决的方法。展开更多
In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors gra...In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.展开更多
文摘O434.22 2004053723 紫外及可见光探测器光谱响应测试系统的研制=Study and development of spectral responsibility testing system for ultraviolet-visible detector[刊,中]/张辉(华北光电所,北京(100015)),刘建伟…∥激光与红外。—2003,33(5)。
基金Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62222413,62025405,62105100,62075228 and 62334001)+1 种基金Natural Science Foundation of Shanghai(23ZR1473400)Hundred Talents Program of the Chinese Academy of Sciences。
文摘In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.
