O482.31 99032000电致发光加速层二氧化硅的电子高场迁移率=Highfieldelectron transport of amorphous SiO<sub>2</sub> asaccelerating layer in the layered optimizationTFEL[刊,中]/娄志东,徐春祥,于磊,滕枫。
文摘O482.31 99032000电致发光加速层二氧化硅的电子高场迁移率=Highfieldelectron transport of amorphous SiO<sub>2</sub> asaccelerating layer in the layered optimizationTFEL[刊,中]/娄志东,徐春祥,于磊,滕枫。