The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
为解决集成电路的全芯片静电防护设计中寄生电阻导致的防护空间压缩问题,提出了一种实用的能够在版图设计过程中提高集成电路静电放电(ESD)防护能力的仿真方法,用于评估和控制ESD电流通路上的寄生电阻,辅助ESD防护设计,预估器件静电防...为解决集成电路的全芯片静电防护设计中寄生电阻导致的防护空间压缩问题,提出了一种实用的能够在版图设计过程中提高集成电路静电放电(ESD)防护能力的仿真方法,用于评估和控制ESD电流通路上的寄生电阻,辅助ESD防护设计,预估器件静电防护等级。详细介绍了仿真方法的原理和流程,以0.18μm SOI CMOS工艺制造的静态随机存储器电路为仿真和实验对象,应用此仿真方法,统计寄生电阻值,优化ESD防护设计,并进行ESD测试,记录未优化样品和优化样品的失效电压。通过对比寄生电阻和失效电压,证明降低寄生电阻可获得更好的ESD防护性能,而且器件失效电压和关键寄生电阻值R Vdd之间存在近似线性反比关系。展开更多
In this study,the characteristics of Electromagnetic(EM) radiation caused by Electrostatic Discharges(ESDs) from metal spheres charged to voltages less than 1 kV are examined experimentally.Our experimental system con...In this study,the characteristics of Electromagnetic(EM) radiation caused by Electrostatic Discharges(ESDs) from metal spheres charged to voltages less than 1 kV are examined experimentally.Our experimental system consists of a pair of spherical electrodes of different diameters,a 1-18 GHz-bandwidth horn antenna and a 20-GHz-bandwidth digitizing oscilloscope.Polarization,waveform duration and peaks of antenna-received voltages from the EM field radiation are measured in order to clarify the EM radiation mechanism.The ratio of the received voltages between the antenna arrangements of the field polarization parallel and perpendicular to the spark pass is 18 to 20 dB.The polarities of the antenna-received voltages are the same as those of the charge voltages across the gap.Moreover,the waveform duration and the first peaks increase with an increase in the diameters of the spherical electrodes.Consequently,we find that the polarization,waveform duration and first peaks of the EM field radiation can be explained by a dipole antenna structure,which makes the spark part of the spherical electrodes a feeding point on the straight line passing through the centres of the two spheres.展开更多
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
文摘为解决集成电路的全芯片静电防护设计中寄生电阻导致的防护空间压缩问题,提出了一种实用的能够在版图设计过程中提高集成电路静电放电(ESD)防护能力的仿真方法,用于评估和控制ESD电流通路上的寄生电阻,辅助ESD防护设计,预估器件静电防护等级。详细介绍了仿真方法的原理和流程,以0.18μm SOI CMOS工艺制造的静态随机存储器电路为仿真和实验对象,应用此仿真方法,统计寄生电阻值,优化ESD防护设计,并进行ESD测试,记录未优化样品和优化样品的失效电压。通过对比寄生电阻和失效电压,证明降低寄生电阻可获得更好的ESD防护性能,而且器件失效电压和关键寄生电阻值R Vdd之间存在近似线性反比关系。
文摘In this study,the characteristics of Electromagnetic(EM) radiation caused by Electrostatic Discharges(ESDs) from metal spheres charged to voltages less than 1 kV are examined experimentally.Our experimental system consists of a pair of spherical electrodes of different diameters,a 1-18 GHz-bandwidth horn antenna and a 20-GHz-bandwidth digitizing oscilloscope.Polarization,waveform duration and peaks of antenna-received voltages from the EM field radiation are measured in order to clarify the EM radiation mechanism.The ratio of the received voltages between the antenna arrangements of the field polarization parallel and perpendicular to the spark pass is 18 to 20 dB.The polarities of the antenna-received voltages are the same as those of the charge voltages across the gap.Moreover,the waveform duration and the first peaks increase with an increase in the diameters of the spherical electrodes.Consequently,we find that the polarization,waveform duration and first peaks of the EM field radiation can be explained by a dipole antenna structure,which makes the spark part of the spherical electrodes a feeding point on the straight line passing through the centres of the two spheres.
