(Gd,Lu)_(2)O_(3)∶Eu scintillation ceramics have promising applications in the high-energy X-ray imaging.Eu0.1Gd0.6Lu1.3O3 nano-powders with pure phase were prepared from the precursor calcined at 1050℃for 4 h by the...(Gd,Lu)_(2)O_(3)∶Eu scintillation ceramics have promising applications in the high-energy X-ray imaging.Eu0.1Gd0.6Lu1.3O3 nano-powders with pure phase were prepared from the precursor calcined at 1050℃for 4 h by the co-precipitation method.Using the synthesized nano-powders as initial material,Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics were fabri-cated by vacuum pre-sintering at different temperatures for 2 h and hot isostatic pressing(HIP)at 1750℃for 3 h in ar-gon.The influence of pre-sintering temperature on the microstructure,optical and luminescence properties was investi-gated.The Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics pre-sintered at 1625℃for 2 h combined with HIP post-treatment show the high-est in-line transmittance of 75.2%at 611 nm.The photoluminescence(PL)and X-ray excited luminescence(XEL)spectra of the Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)transparent ceramics demonstrate a strong red emission peak at 611 nm due to the^(5)D_(0)→^(7)F_(2) transition of Eu^(3+).The PL,PLE and XEL intensities of the HIP post-treated Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics show a trend of first ascending and then descending with the increase of pre-sintering temperature.The thermally stimulated lumines-cence(TSL)curve of the HIP post-treated Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics presents one high peak at 178 K and two peaks with lower intensities at 253 K and 320 K.The peak at 320 K may be related to oxygen vacancies,and the lumines-cence peak at 178 K is related to defects caused by the valence state changes of Eu^(3+)ions.展开更多
ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were...ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V-I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi2O3 phase, ZnTSbaOl2-type spinel phase and Zn2Bi3Sb3O14-type pyrochlore are present, and the Yb2O3 phases and Sb2O4 phases are found in varistor ceramics with increasing amounts of Yb2O3. The average size of ZnO grain firstly increases and then decreases with the increase of Yb2O3 content. The result also shows that the threshold voltage is between 656 V/nun and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1-22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb2O3-added ZnO-Bi2O3-based varistor ceramics sintered at 900 ℃ have the best electrical characteristics.展开更多
The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential ther...The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.展开更多
The effects of B2O3 addition on both the sintering behavior and microwave dielectric properties of CaO-B2O3-SiO2 （CBS） glass ceramics were investigated by Fourier transform infrared spectroscopy （FTIR）, X-ray diff...The effects of B2O3 addition on both the sintering behavior and microwave dielectric properties of CaO-B2O3-SiO2 （CBS） glass ceramics were investigated by Fourier transform infrared spectroscopy （FTIR）, X-ray diffractometry （XRD） and scanning electron microscopy （SEM）. The results show that the increasing amount of B203 causes the increase of the contents of [BO3], [BO4] and [SiO4], which deduces the increase of CaB204 and a-SiO2 and the decrease of CaSiO3 correspondingly. No new phase is observed throughout the entire experiments. A bulk density of 2.54 g/cm3, a thermal expansion coefficient value of 11.95× 10-6 ℃-1 （20-500℃）, a dielectric constant er value of 6.42 and a dielectric loss tanδ value of 0.000 9 （measured at 9.7 GHz） are obtained for CBS glass ceramics containing 35%-B203 （mass fraction） sintered at 850 ℃ for 15 min.展开更多
The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and mi...The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu（B2O5） addition can effectively reduce the sintering temperature to 900℃, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of er24.5, Q×f =24 622 GHz, rf=4.2×10-6℃ -1 are obtained for 1.0% BCB-doped Li2MgTi3O8 ceramics sintered at 900℃ for 3 h. The BCB-doped Li2MgTi3O8 ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.展开更多
SiO2-Al2O3-ZrO2 glasses with different nucleating agents were crystallized under special processing schedule. The microstructure and mechanical properties of the glass-ceramics in SiO2-Al2O3-ZrO2 system were investiga...SiO2-Al2O3-ZrO2 glasses with different nucleating agents were crystallized under special processing schedule. The microstructure and mechanical properties of the glass-ceramics in SiO2-Al2O3-ZrO2 system were investigated by differential scanning calorimetry, scanning electron microscopy, X-ray diffraction and three-point bending method. The results show that ZrO2 is not an effective nucleating agent in SiO2-Al2O3-ZrO2 system, while TiO2 is effective for the separation of spinel, and P2O5 facilitates solubility of ZrO2 in glass and crystallization. The main crystalline phases of the glass-ceramics are spinel, anorthite and tetragonal zirconia. With the increase of ZrO2 content in the glass, glass-ceramics show higher bending strength （120MPa） than others.展开更多
The effect of the sintering atmospheres (vacuum, N_2, Ar) on the microstructures and properties of the TiC based cermets was studied using XRD, SEM/BSE and energy dispersive spectrometer. Compared with the alloy sinte...The effect of the sintering atmospheres (vacuum, N_2, Ar) on the microstructures and properties of the TiC based cermets was studied using XRD, SEM/BSE and energy dispersive spectrometer. Compared with the alloy sintered in vacuum, the carbon content of the specimen sintered in N_2 and Ar is lower by 0.5%; and the nitrogen content is higher by 0.3% when sintered in nitrogen. The central part of the ring structure may be carbide with either a high W or Ti content. The ring structures are (Ti, W, Ta, Mo, Co, Ni)C solid solutions with different metallic elements and distributions. The composition of the binder phase is (Co, Ni) solid solution with different Ti, W, Ta, Mo, C contents. The structures are uniform for the cermets sintered in vacuum and the properties are the best. When sintered in Ar or N2, the O_2 and N2 in the atmosphere take part in the sintering reaction to break the carbon balance in the cermets to form a shell structure and defects, which results in poor density, microhardness (HV) and transverse rupture strength (TRS).展开更多
Aiming at developing novel microwave-transparent ceramics with low dielectric loss, high thermal conductivity and high strength, Si3Na-AIN （30%, mass fraction） composite ceramics with La203 as sintering additive wer...Aiming at developing novel microwave-transparent ceramics with low dielectric loss, high thermal conductivity and high strength, Si3Na-AIN （30%, mass fraction） composite ceramics with La203 as sintering additive were prepared by hot-pressing at 1 800 ℃ and subsequently annealed at 1 450 ℃ and 1 850 ℃ for 2 h and 4 h, respectively. The materials were characterized by XRD and SEM. The effect of annealing process on the phase composition, sintering performance, microstructure, bending strength, dielectric loss and thermal conductivity of the materials was investigated. The results showed that both annealing at 1 850 ℃ and 1 450 ℃ promoted the phase transformation of α-Si3N4 to β-Si3N4. After annealing at 1 850 ℃, grain growth to a certain extent occurred in the materials. Especially, the elongated β-Si3N4 grains showed a slight increase in diameter from 0.2 μm to 0.6 μm approximately and a decrease in aspect ratio. As a result, as the annealing time increased to 4 h, the bending strength declined from 456 MPa to 390 MPa, whereas the dielectric loss decreased to 2.15× 10^-3 and the thermal conductivity increased to 16.3 W/（m.K） gradually. When annealed at 1 450 ℃, increasing the annealing time to 4 h significantly promoted the crystallization of glassy phase to La2Si6N803 phase in the materials, which led to the increase in bending strength to 619 MPa and thermal conductivity to 15.9 W/（m·K）, respectively, and simultaneously the decrease in dielectric loss to 1.53× 10^-3.展开更多
In this study,a high-purity In_(2)Ga_(2)ZnO_(7) ceramic target was used to deposit indium gallium zinc oxide(IGZO)films by RF magnetron sputtering technology.The microstructure,growth state,optical and electrical prop...In this study,a high-purity In_(2)Ga_(2)ZnO_(7) ceramic target was used to deposit indium gallium zinc oxide(IGZO)films by RF magnetron sputtering technology.The microstructure,growth state,optical and electrical properties of the IGZO films were studied.The results showed that the surface of the IGZO film was uniform and smooth at room temperature.As the substrate temperature increased,the surface roughness of the film gradually increased.From room temperature to 300℃,all the films maintained amorphous phase and good thermal stabilities.Moreover,the transmission in the visible region decreased from 91.93%to 91.08%,and the band gap slightly decreased from 3.79 to 3.76 eV.The characterization of the film via atomic force microscope(AFM)and X-ray photoelectron spectroscopy(XPS)demonstrated that the film prepared at room temperature exhibited the lowest surface roughness and the largest content of oxygen vacancies.With the rise in temperature,the non-homogeneous particle distribution,increase in the surface roughness,and reduction in the number of oxygen vacancies resulted in lower performance of theα-IGZO film.Comprehensive analysis showed that the best optical and electrical properties can be obtained by depositing IGZO films at room temperature,which indicates their potential applications in flexible substrates.展开更多
文摘(Gd,Lu)_(2)O_(3)∶Eu scintillation ceramics have promising applications in the high-energy X-ray imaging.Eu0.1Gd0.6Lu1.3O3 nano-powders with pure phase were prepared from the precursor calcined at 1050℃for 4 h by the co-precipitation method.Using the synthesized nano-powders as initial material,Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics were fabri-cated by vacuum pre-sintering at different temperatures for 2 h and hot isostatic pressing(HIP)at 1750℃for 3 h in ar-gon.The influence of pre-sintering temperature on the microstructure,optical and luminescence properties was investi-gated.The Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics pre-sintered at 1625℃for 2 h combined with HIP post-treatment show the high-est in-line transmittance of 75.2%at 611 nm.The photoluminescence(PL)and X-ray excited luminescence(XEL)spectra of the Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)transparent ceramics demonstrate a strong red emission peak at 611 nm due to the^(5)D_(0)→^(7)F_(2) transition of Eu^(3+).The PL,PLE and XEL intensities of the HIP post-treated Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics show a trend of first ascending and then descending with the increase of pre-sintering temperature.The thermally stimulated lumines-cence(TSL)curve of the HIP post-treated Eu_(0.1)Gd_(0.6)Lu_(1.3)O_(3)ceramics presents one high peak at 178 K and two peaks with lower intensities at 253 K and 320 K.The peak at 320 K may be related to oxygen vacancies,and the lumines-cence peak at 178 K is related to defects caused by the valence state changes of Eu^(3+)ions.
基金Project(BK2011243) supported by the Natural Science Foundation of Jiangsu Province,ChinaProject(2007DA10512711408) supported by the Visiting Scholarship of State Key Laboratory of Power Transmission Equipment & System Security and New Technology (Chongqing University),China+4 种基金Project(EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment,ChinaProject(KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing,ChinaProject(KFJJ201105) supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,ChinaProject(11JDG084) supported by the Research Foundation of Jiangsu University,China
文摘ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V-I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi2O3 phase, ZnTSbaOl2-type spinel phase and Zn2Bi3Sb3O14-type pyrochlore are present, and the Yb2O3 phases and Sb2O4 phases are found in varistor ceramics with increasing amounts of Yb2O3. The average size of ZnO grain firstly increases and then decreases with the increase of Yb2O3 content. The result also shows that the threshold voltage is between 656 V/nun and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1-22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb2O3-added ZnO-Bi2O3-based varistor ceramics sintered at 900 ℃ have the best electrical characteristics.
基金Project(2007AA03Z0455) supported by the National High Technology Research and Development Program of ChinaProject supported by the Priority Academic Program Development of Jiangsu Higher Education Institution, China
文摘The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.
基金Project(2007AA03Z0455) supported by the National High-Technology Research and Development Program of ChinaProject(BE2009168) supported by the Natural Science Foundation of Jiangsu Province in ChinaProject supported by the Priority Academic Program Development of Jiangsu Higher Education Institution,China
文摘The effects of B2O3 addition on both the sintering behavior and microwave dielectric properties of CaO-B2O3-SiO2 （CBS） glass ceramics were investigated by Fourier transform infrared spectroscopy （FTIR）, X-ray diffractometry （XRD） and scanning electron microscopy （SEM）. The results show that the increasing amount of B203 causes the increase of the contents of [BO3], [BO4] and [SiO4], which deduces the increase of CaB204 and a-SiO2 and the decrease of CaSiO3 correspondingly. No new phase is observed throughout the entire experiments. A bulk density of 2.54 g/cm3, a thermal expansion coefficient value of 11.95× 10-6 ℃-1 （20-500℃）, a dielectric constant er value of 6.42 and a dielectric loss tanδ value of 0.000 9 （measured at 9.7 GHz） are obtained for CBS glass ceramics containing 35%-B203 （mass fraction） sintered at 850 ℃ for 15 min.
基金Project(2010GXNSFA013029) supported by the Natural Science Foundation of Guangxi Province,ChinaProject(101059529) supported by National Undergraduate Innovation Program of the Ministry of Education of China
文摘The influences of BaCu（B2O5） （BCB） addition on sintering, microstructure and microwave dielectric properties of Li2MgTi308 ceramics were investigated using X-ray diffractometry, scanning electron microscopy and microwave dielectric measurements. The experimental results show that a small amount of BaCu（B2O5） addition can effectively reduce the sintering temperature to 900℃, and induce only a limited degradation of the microwave dielectric properties. Typically, the best microwave dielectric properties of er24.5, Q×f =24 622 GHz, rf=4.2×10-6℃ -1 are obtained for 1.0% BCB-doped Li2MgTi3O8 ceramics sintered at 900℃ for 3 h. The BCB-doped Li2MgTi3O8 ceramics can be compatible with Ag electrode, which may be a strong candidate for low temperature co-fired ceramics applications.
文摘SiO2-Al2O3-ZrO2 glasses with different nucleating agents were crystallized under special processing schedule. The microstructure and mechanical properties of the glass-ceramics in SiO2-Al2O3-ZrO2 system were investigated by differential scanning calorimetry, scanning electron microscopy, X-ray diffraction and three-point bending method. The results show that ZrO2 is not an effective nucleating agent in SiO2-Al2O3-ZrO2 system, while TiO2 is effective for the separation of spinel, and P2O5 facilitates solubility of ZrO2 in glass and crystallization. The main crystalline phases of the glass-ceramics are spinel, anorthite and tetragonal zirconia. With the increase of ZrO2 content in the glass, glass-ceramics show higher bending strength （120MPa） than others.
基金Foundation item: Project(2002AA331090) supported by the Hi-tech Research and Development Program of China Project(06D073) supported by Scientific Research Fund of Education Department of Hunan Province
文摘The effect of the sintering atmospheres (vacuum, N_2, Ar) on the microstructures and properties of the TiC based cermets was studied using XRD, SEM/BSE and energy dispersive spectrometer. Compared with the alloy sintered in vacuum, the carbon content of the specimen sintered in N_2 and Ar is lower by 0.5%; and the nitrogen content is higher by 0.3% when sintered in nitrogen. The central part of the ring structure may be carbide with either a high W or Ti content. The ring structures are (Ti, W, Ta, Mo, Co, Ni)C solid solutions with different metallic elements and distributions. The composition of the binder phase is (Co, Ni) solid solution with different Ti, W, Ta, Mo, C contents. The structures are uniform for the cermets sintered in vacuum and the properties are the best. When sintered in Ar or N2, the O_2 and N2 in the atmosphere take part in the sintering reaction to break the carbon balance in the cermets to form a shell structure and defects, which results in poor density, microhardness (HV) and transverse rupture strength (TRS).
基金Project(50872052) supported by the National Natural Science Foundation of ChinaProject(2009AA05Z313) supported by the National High Technology Research and Development Program of ChinaProject supported by the Commission of Science,Technology and Industry for National Defence,China
文摘Aiming at developing novel microwave-transparent ceramics with low dielectric loss, high thermal conductivity and high strength, Si3Na-AIN （30%, mass fraction） composite ceramics with La203 as sintering additive were prepared by hot-pressing at 1 800 ℃ and subsequently annealed at 1 450 ℃ and 1 850 ℃ for 2 h and 4 h, respectively. The materials were characterized by XRD and SEM. The effect of annealing process on the phase composition, sintering performance, microstructure, bending strength, dielectric loss and thermal conductivity of the materials was investigated. The results showed that both annealing at 1 850 ℃ and 1 450 ℃ promoted the phase transformation of α-Si3N4 to β-Si3N4. After annealing at 1 850 ℃, grain growth to a certain extent occurred in the materials. Especially, the elongated β-Si3N4 grains showed a slight increase in diameter from 0.2 μm to 0.6 μm approximately and a decrease in aspect ratio. As a result, as the annealing time increased to 4 h, the bending strength declined from 456 MPa to 390 MPa, whereas the dielectric loss decreased to 2.15× 10^-3 and the thermal conductivity increased to 16.3 W/（m.K） gradually. When annealed at 1 450 ℃, increasing the annealing time to 4 h significantly promoted the crystallization of glassy phase to La2Si6N803 phase in the materials, which led to the increase in bending strength to 619 MPa and thermal conductivity to 15.9 W/（m·K）, respectively, and simultaneously the decrease in dielectric loss to 1.53× 10^-3.
基金Project(2018M632797)supported by the Postdoctoral Science Foundation of ChinaProject(52004253)supported by the National Natural Science Foundation of China。
文摘In this study,a high-purity In_(2)Ga_(2)ZnO_(7) ceramic target was used to deposit indium gallium zinc oxide(IGZO)films by RF magnetron sputtering technology.The microstructure,growth state,optical and electrical properties of the IGZO films were studied.The results showed that the surface of the IGZO film was uniform and smooth at room temperature.As the substrate temperature increased,the surface roughness of the film gradually increased.From room temperature to 300℃,all the films maintained amorphous phase and good thermal stabilities.Moreover,the transmission in the visible region decreased from 91.93%to 91.08%,and the band gap slightly decreased from 3.79 to 3.76 eV.The characterization of the film via atomic force microscope(AFM)and X-ray photoelectron spectroscopy(XPS)demonstrated that the film prepared at room temperature exhibited the lowest surface roughness and the largest content of oxygen vacancies.With the rise in temperature,the non-homogeneous particle distribution,increase in the surface roughness,and reduction in the number of oxygen vacancies resulted in lower performance of theα-IGZO film.Comprehensive analysis showed that the best optical and electrical properties can be obtained by depositing IGZO films at room temperature,which indicates their potential applications in flexible substrates.
