介绍了采用锗硅技术的低噪声放大器的基本理论,给出了一个2GHz低噪声放大器的例子,并总结了近来采用锗硅技术的各种频段的低噪声放大器研究情况。最后,介绍了锗硅技术的广阔应用前景。<正>The theory of LNAs using SiGe bipolar ...介绍了采用锗硅技术的低噪声放大器的基本理论,给出了一个2GHz低噪声放大器的例子,并总结了近来采用锗硅技术的各种频段的低噪声放大器研究情况。最后,介绍了锗硅技术的广阔应用前景。<正>The theory of LNAs using SiGe bipolar technology is presented. And a 2GHz LNA based SiGe technology is presented in this article and state-of-the-art in SiGe based devices in different areas are described. Finally, the application of SiGe-based device was summarized.展开更多
文摘介绍了采用锗硅技术的低噪声放大器的基本理论,给出了一个2GHz低噪声放大器的例子,并总结了近来采用锗硅技术的各种频段的低噪声放大器研究情况。最后,介绍了锗硅技术的广阔应用前景。<正>The theory of LNAs using SiGe bipolar technology is presented. And a 2GHz LNA based SiGe technology is presented in this article and state-of-the-art in SiGe based devices in different areas are described. Finally, the application of SiGe-based device was summarized.
