The photon-current conversion properties of nanostructured TiO2/Q-CdS film electrode were studied by using the photocurrent action spectra and the photocurrent dependence of potential.Because of quantum size effect,th...The photon-current conversion properties of nanostructured TiO2/Q-CdS film electrode were studied by using the photocurrent action spectra and the photocurrent dependence of potential.Because of quantum size effect,the bandgap of Q-CdS particles was widened to 2.51eV which were prepared when they were immersed in Cd(NO3)2 and Na2S solution respectively for 60s and then dried at 80℃.The diagram of energy level of Q-CdS film was determined with the photocurrent-potential curves and photoelectrochemical method.The valence band of Q-CdS film was-6.168eV(vs Vaccum).The nanostructured TiO2/Q-CdS film electrode could enlarge absorption region and obviously increase the photocurrent.The photon-electron conversion efficiency could be improved.展开更多
紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外...紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外延生长了表面平整、界面清晰可辨且陡峭的高Al组分AlGa N多量子阱结构材料,并对其进行变温光致发光谱测试,结合数值计算,深入探讨了Al Ga N量子阱的发光机制。研究表明,量子阱中具有很强的局域化效应,其发光和局域激子的跳跃息息相关,而发光的猝灭则与局域激子的解局域以及位错引起的非辐射复合有关。展开更多
文摘The photon-current conversion properties of nanostructured TiO2/Q-CdS film electrode were studied by using the photocurrent action spectra and the photocurrent dependence of potential.Because of quantum size effect,the bandgap of Q-CdS particles was widened to 2.51eV which were prepared when they were immersed in Cd(NO3)2 and Na2S solution respectively for 60s and then dried at 80℃.The diagram of energy level of Q-CdS film was determined with the photocurrent-potential curves and photoelectrochemical method.The valence band of Q-CdS film was-6.168eV(vs Vaccum).The nanostructured TiO2/Q-CdS film electrode could enlarge absorption region and obviously increase the photocurrent.The photon-electron conversion efficiency could be improved.
文摘紫外LED的发光功率和效率还远不能令人们满意,波长短于300 nm的深紫外LED的发光效率普遍较低。厘清高Al组分Al Ga N多量子阱结构的发光机制将有利于探索改善深紫外LED的发光效率的新途径、新方法。为此,本文通过金属有机气相外延技术外延生长了表面平整、界面清晰可辨且陡峭的高Al组分AlGa N多量子阱结构材料,并对其进行变温光致发光谱测试,结合数值计算,深入探讨了Al Ga N量子阱的发光机制。研究表明,量子阱中具有很强的局域化效应,其发光和局域激子的跳跃息息相关,而发光的猝灭则与局域激子的解局域以及位错引起的非辐射复合有关。
