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Energy Transfer and Photoluminescence Enhancement in WS_(2)/hBN/MoS_(2) Heterostructures
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作者 CHEN Pengyao REN Bingyan +4 位作者 ZHANG Chengyu LI Boyuan WANG Jiaxi ZHANG Kaixuan ZHAO Weijie 《发光学报》 EI CAS CSCD 北大核心 2024年第12期2021-2029,共9页
Two-dimensional(2D)transition metal dichalcogenides(TMDs)and their heterostructures(HSs)exhibit unique optical properties and show great promise for developing next-generation optoelectronics.However,the photo-lumines... Two-dimensional(2D)transition metal dichalcogenides(TMDs)and their heterostructures(HSs)exhibit unique optical properties and show great promise for developing next-generation optoelectronics.However,the photo-luminescence(PL)quantum yield of monolayer(1L)TMDs is still quite low at room temperature,which severely lim-its their practical applications.Here we report a PL enhancement effect of 1L WS_(2) at room temperature when con-structing it into 1L-WS_(2)/hBN/1L-MoS_(2) vertical HSs.The PL enhancement factors(EFs)can be up to 4.2.By using transient absorption(TA)spectroscopy,we demonstrate that the PL enhancement effect is due to energy transfer from 1L MoS_(2) to 1L WS_(2).The energy transfer process occurs on a picosecond timescale and lasts more than one hundred picoseconds which indicates a prominent contribution from exciton-exciton annihilation.Furthermore,the PL en-hancement effect of 1L WS_(2) can be observed in 2L-MoS_(2)/hBN/1L-WS_(2) and 3L-MoS_(2)/hBN/1L-WS_(2) HSs.Our study provides a comprehensive understanding of the energy transfer process in the PL enhancement of 2D TMDs and a fea-sible way to optimize the performance of TMD-based optoelectronic devices. 展开更多
关键词 transition metal dichalcogenide van der Waals heterostructures PHOTOLUMINESCENCE Förster resonance energy transfer exciton-exciton annihilation
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二维WSe_(2)场效应晶体管光电性能 被引量:8
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作者 夏风梁 石凯熙 +3 位作者 赵东旭 王云鹏 范翊 李金华 《发光学报》 EI CAS CSCD 北大核心 2021年第2期257-263,共7页
自石墨烯被发现以来,随着人们不断的研究和探索,越来越多具有类似结构的二维材料因其优异的光电性质相继被发现和研究。过渡金属硫族化合物(TMDs)因其丰富的物理性质而受到广泛关注。本文研究了三层二硒化钨(WSe_(2))纳米片的光电性能... 自石墨烯被发现以来,随着人们不断的研究和探索,越来越多具有类似结构的二维材料因其优异的光电性质相继被发现和研究。过渡金属硫族化合物(TMDs)因其丰富的物理性质而受到广泛关注。本文研究了三层二硒化钨(WSe_(2))纳米片的光电性能。利用范德华力将WSe_(2)转移到SiO_(2)/Si衬底的Au电极上,用银浆引出背栅电极,制备了WSe_(2)场效应晶体管,其载流子迁移率为3.42 cm^(2)/(V·s)。WSe_(2)场效应晶体管在630 nm波长下探测器响应度为0.61 A/W,器件的光响应恢复时间为1900 ms。 展开更多
关键词 二维半导体材料 过渡金属硫族化物 二硒 光电探测
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