针对高氮钢增材过程中氮损失及力学性能降低等问题,采用常规脉冲熔化极气保电弧(Pulsed Gas Metal Arc,P-GMA)及在脉冲电流峰值阶段叠加超音频脉冲电流的P-GMA对高氮钢进行电弧增材制造实验,分别制备不同工艺参数下的单道多层高氮钢直壁...针对高氮钢增材过程中氮损失及力学性能降低等问题,采用常规脉冲熔化极气保电弧(Pulsed Gas Metal Arc,P-GMA)及在脉冲电流峰值阶段叠加超音频脉冲电流的P-GMA对高氮钢进行电弧增材制造实验,分别制备不同工艺参数下的单道多层高氮钢直壁体,研究超音频脉冲电流叠加对高氮钢电弧增材制造凝固方式、显微组织演变及力学性能的影响规律。研究结果表明:由于高氮钢在电弧增材过程中存在氮损失现象,不同增材模式下高氮钢金属熔池的凝固模式均由单相奥氏体凝固(A模式)转变为铁素体为先析出相、奥氏体依附铁素体界面析出(FA模式);相比于常规P-GMA,叠加超音频脉冲电流后P-GMA产生的高频超声效应能够提高氮元素的扩散,促进奥氏体相变,限制铁素体枝晶生长;经过对比分析,超音频脉冲电流对铁素体树枝晶Y轴方向的影响大于Z轴方向,对Y轴方向力学性能的影响也大于Z轴方向,当频率为60 kHz时Y轴方向抗拉强度提高了9.9%,屈服强度提高了15.9%。展开更多
针对高氮钢增材制造熔滴过渡过程中氮元素逸出及飞溅问题,进行超音频脉冲熔化极气体保护(Ultrasonic Frequency Pulsed Gas Metal Arc,UFP-GMA)增材制造熔滴过渡试验,研究不同超音频脉冲电流叠加模式和脉冲电流频率对高氮钢熔滴过渡稳...针对高氮钢增材制造熔滴过渡过程中氮元素逸出及飞溅问题,进行超音频脉冲熔化极气体保护(Ultrasonic Frequency Pulsed Gas Metal Arc,UFP-GMA)增材制造熔滴过渡试验,研究不同超音频脉冲电流叠加模式和脉冲电流频率对高氮钢熔滴过渡稳定性的影响,获取能够实现高氮钢增材稳定熔滴过渡的工艺参数。试验结果表明:在脉冲熔化极气体保护(Pulsed Gas Metal Arc,P-GMA)增材工艺条件下可以实现一脉一滴过渡,但是过渡稳定性较差,飞溅明显;在P-GMA基值阶段或基值和峰值阶段都叠加超音频脉冲电流均不利于熔滴过渡,容易出现短路、熔滴爆炸等问题;在P-GMA峰值阶段叠加低频(20 kHz)脉冲电流时,对熔滴过渡影响较弱,叠加中频(40~60 kHz)脉冲电流能抑制高氮钢熔滴过渡中大颗粒飞溅生成,提高熔滴过渡稳定性,但是当频率超过60 kHz时在过渡中会形成许多小飞溅。展开更多
Filter capacitors play an important role in altern-ating current(AC)-line filtering for stabilizing voltage,sup-pressing harmonics,and improving power quality.However,traditional aluminum electrolytic capacitors(AECs)...Filter capacitors play an important role in altern-ating current(AC)-line filtering for stabilizing voltage,sup-pressing harmonics,and improving power quality.However,traditional aluminum electrolytic capacitors(AECs)suffer from a large size,short lifespan,low power density,and poor reliability,which limits their use.In contrast,ultrafast supercapacitors(SCs)are ideal for replacing commercial AECs because of their extremely high power densities,fast charging and discharging,and excellent high-frequency re-sponse.We review the design principles and key parameters for ultrafast supercapacitors and summarize research pro-gress in recent years from the aspects of electrode materials,electrolytes,and device configurations.The preparation,structures,and frequency response performance of electrode materials mainly consisting of carbon materials such as graphene and carbon nanotubes,conductive polymers,and transition metal compounds,are focused on.Finally,future research directions for ultrafast SCs are suggested.展开更多
Three differential equations based on different definitions of current density are compared. Formulation I is based on an incomplete equation for total current density （TCD）. Formulations II and {I1 are based on inc...Three differential equations based on different definitions of current density are compared. Formulation I is based on an incomplete equation for total current density （TCD）. Formulations II and {I1 are based on incomplete and complete equations for source current density （SCD）, respectively. Using the weak form of finite element method （FEM）, three formulations were applied in a spiral coil electromagnetic acoustic transducer （EMAT） example to solve magnetic vector potential （MVP）. The input impedances calculated by Formulation III are in excellent agreement with the experimental measurements. Results show that the errors for Formulations I ＆ II vary with coil diameter, coil spacing, lift-off distance and external excitation frequency, for the existence of eddy-current and skin ＆ proximity effects. And the current distribution across the coil conductor also follows the same trend. It is better to choose Formulation I instead of Formulation Ili to solve MVP when the coil diameter is less than twice the skin depth for Formulation I is a low cost and high efficiency calculation method.展开更多
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the mo...As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.展开更多
文摘针对高氮钢增材过程中氮损失及力学性能降低等问题,采用常规脉冲熔化极气保电弧(Pulsed Gas Metal Arc,P-GMA)及在脉冲电流峰值阶段叠加超音频脉冲电流的P-GMA对高氮钢进行电弧增材制造实验,分别制备不同工艺参数下的单道多层高氮钢直壁体,研究超音频脉冲电流叠加对高氮钢电弧增材制造凝固方式、显微组织演变及力学性能的影响规律。研究结果表明:由于高氮钢在电弧增材过程中存在氮损失现象,不同增材模式下高氮钢金属熔池的凝固模式均由单相奥氏体凝固(A模式)转变为铁素体为先析出相、奥氏体依附铁素体界面析出(FA模式);相比于常规P-GMA,叠加超音频脉冲电流后P-GMA产生的高频超声效应能够提高氮元素的扩散,促进奥氏体相变,限制铁素体枝晶生长;经过对比分析,超音频脉冲电流对铁素体树枝晶Y轴方向的影响大于Z轴方向,对Y轴方向力学性能的影响也大于Z轴方向,当频率为60 kHz时Y轴方向抗拉强度提高了9.9%,屈服强度提高了15.9%。
文摘针对高氮钢增材制造熔滴过渡过程中氮元素逸出及飞溅问题,进行超音频脉冲熔化极气体保护(Ultrasonic Frequency Pulsed Gas Metal Arc,UFP-GMA)增材制造熔滴过渡试验,研究不同超音频脉冲电流叠加模式和脉冲电流频率对高氮钢熔滴过渡稳定性的影响,获取能够实现高氮钢增材稳定熔滴过渡的工艺参数。试验结果表明:在脉冲熔化极气体保护(Pulsed Gas Metal Arc,P-GMA)增材工艺条件下可以实现一脉一滴过渡,但是过渡稳定性较差,飞溅明显;在P-GMA基值阶段或基值和峰值阶段都叠加超音频脉冲电流均不利于熔滴过渡,容易出现短路、熔滴爆炸等问题;在P-GMA峰值阶段叠加低频(20 kHz)脉冲电流时,对熔滴过渡影响较弱,叠加中频(40~60 kHz)脉冲电流能抑制高氮钢熔滴过渡中大颗粒飞溅生成,提高熔滴过渡稳定性,但是当频率超过60 kHz时在过渡中会形成许多小飞溅。
文摘Filter capacitors play an important role in altern-ating current(AC)-line filtering for stabilizing voltage,sup-pressing harmonics,and improving power quality.However,traditional aluminum electrolytic capacitors(AECs)suffer from a large size,short lifespan,low power density,and poor reliability,which limits their use.In contrast,ultrafast supercapacitors(SCs)are ideal for replacing commercial AECs because of their extremely high power densities,fast charging and discharging,and excellent high-frequency re-sponse.We review the design principles and key parameters for ultrafast supercapacitors and summarize research pro-gress in recent years from the aspects of electrode materials,electrolytes,and device configurations.The preparation,structures,and frequency response performance of electrode materials mainly consisting of carbon materials such as graphene and carbon nanotubes,conductive polymers,and transition metal compounds,are focused on.Finally,future research directions for ultrafast SCs are suggested.
基金Project(2014BAF12B01)supported by the Key Projects in the National Science&Technology Pillar Program during the Twelfth Five-year Plan Period,ChinaProject(51405520)supported by the National Natural Science Foundation of ChinaProject(2012CB619505)supported by National Basic Research Program of China
文摘Three differential equations based on different definitions of current density are compared. Formulation I is based on an incomplete equation for total current density （TCD）. Formulations II and {I1 are based on incomplete and complete equations for source current density （SCD）, respectively. Using the weak form of finite element method （FEM）, three formulations were applied in a spiral coil electromagnetic acoustic transducer （EMAT） example to solve magnetic vector potential （MVP）. The input impedances calculated by Formulation III are in excellent agreement with the experimental measurements. Results show that the errors for Formulations I ＆ II vary with coil diameter, coil spacing, lift-off distance and external excitation frequency, for the existence of eddy-current and skin ＆ proximity effects. And the current distribution across the coil conductor also follows the same trend. It is better to choose Formulation I instead of Formulation Ili to solve MVP when the coil diameter is less than twice the skin depth for Formulation I is a low cost and high efficiency calculation method.
基金Project(61074051)supported by the National Natural Science Foundation of ChinaProject(10C0709)supported by the Scientific Research Fund of Education Department of Hunan Province,ChinaProject(2011GK3058)supported by the Science and Technology Plan of Hunan Province,China
文摘As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliability theory and experiments,the direct tunneling current in lightly-doped drain (LDD) NMOSFET with 1.4 nm gate oxide fabricated by 90 nm complementary metal oxide semiconductor (CMOS) process was studied in depth.High-precision semiconductor parameter analyzer was used to conduct the tests.Law of variation of the direct tunneling (DT) current with channel length,channel width,measuring voltage,drain bias and reverse substrate bias was revealed.The results show that the change of the DT current obeys index law;there is a linear relationship between gate current and channel dimension;drain bias and substrate bias can reduce the gate current.
